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31. 发明申请

US20070295276A1 BAKE PLATE HAVING ENGAGEABLE THERMAL MASS 审中-公开
标题翻译：具有可焊接热质的烤盘
公开(公告)号：US20070295276A1
公开(公告)日：2007-12-27
申请号：US11849946
申请日：2007-09-04
申请人： David Quach , Tetsuya Ishikawa
发明人： David Quach , Tetsuya Ishikawa
IPC分类号： C23C16/00
CPC分类号： H01L21/67109 , H01L21/67184 , H01L21/67225 , H01L21/67748
摘要： A bake station comprising a bake plate adapted to heat a substrate supported on an upper surface of the bake plate, the bake plate vertically moveable between an upper baking position and a lower cooling position; and a plurality of heat sinks adapted to be engageably coupled to a lower surface of the bake plate when the bake plate is in the lower cooling position.
摘要翻译：一种烘烤台，包括适于加热支撑在所述烘烤板的上表面上的基底的烘烤板，所述烘烤板可在上烘烤位置和下冷却位置之间垂直移动; 以及多个散热器，其适于在所述烘烤板处于所述下部冷却位置时可接合地联接到所述烘烤板的下表面。

32. 发明申请

US20070271408A1 Memory administrating method 有权
标题翻译：记忆管理方法
公开(公告)号：US20070271408A1
公开(公告)日：2007-11-22
申请号：US11706247
申请日：2007-02-15
申请人： Hiroyasu Nishimura , Tomohiro Suzuki , Yuji Tamura , Tetsuya Ishikawa , Tomoya Ogawa , Fumikage Uchida , Nao Moromizato , Masayuki Yasukaga , Munetoshi Eguchi
发明人： Hiroyasu Nishimura , Tomohiro Suzuki , Yuji Tamura , Tetsuya Ishikawa , Tomoya Ogawa , Fumikage Uchida , Nao Moromizato , Masayuki Yasukaga , Munetoshi Eguchi
IPC分类号： G06F12/02
CPC分类号： G06F12/023 , Y10S707/99953 , Y10S707/99957
摘要： A memory administrating method of administrating a memory divided into plural regions each of which consists of consecutive memory addresses, comprising steps of: providing each region of the plural regions with usage information; and when releasing a release target region currently being in use, determining a usage of the release target region based on the usage information of at least one of neighboring regions positioned before and after the release target region.
摘要翻译：一种存储器管理方法，用于管理分成多个区域的存储器，每个存储器由连续的存储器地址组成，包括以下步骤：为多个区域的每个区域提供使用信息; 并且当释放当前正在使用的释放目标区域时，基于位于释放目标区域之前和之后的至少一个相邻区域的使用信息来确定释放目标区域的使用。

33. 发明申请

US20070269138A1 Image forming apparatus 有权
标题翻译：图像形成装置
公开(公告)号：US20070269138A1
公开(公告)日：2007-11-22
申请号：US11714876
申请日：2007-03-07
申请人： Munetoshi Eguchi , Tomohiro Suzuki , Yuji Tamura , Tetsuya Ishikawa , Hiroyasu Nishimura , Tomoya Ogawa , Fumikage Uchida , Nao Moromizato , Masayuki Yasukaga
发明人： Munetoshi Eguchi , Tomohiro Suzuki , Yuji Tamura , Tetsuya Ishikawa , Hiroyasu Nishimura , Tomoya Ogawa , Fumikage Uchida , Nao Moromizato , Masayuki Yasukaga
IPC分类号： G06K9/20
CPC分类号： G06T1/60
摘要： An image processing apparatus comprises a memory; a store control section to divide and store image data in plural vacant memory regions in the memory; and an image administrating information registering section to register each divided image data divided by the store control section by correlating position information of each divided image data in the image data before dividing the image data with storing position information of each divided image data indicating a storing memory region.
摘要翻译：图像处理装置包括存储器; 存储控制部分，用于在存储器中的多个空闲存储器区域中分割和存储图像数据; 以及图像管理信息登记部分，用于通过将分割图像数据之前的图像数据中的每个分割图像数据的位置信息与指示存储存储器的每个分割图像数据的存储位置信息相关联来对由存储控制部分分割的每个分割图像数据进行登记地区。

34. 发明申请

US20070254092A1 Systems and Methods for Detecting Abnormal Dispense of Semiconductor Process Fluids 审中-公开
标题翻译：用于检测半导体工艺流体异常分配的系统和方法
公开(公告)号：US20070254092A1
公开(公告)日：2007-11-01
申请号：US11380912
申请日：2006-04-28
申请人： Y. LIN , Tetsuya Ishikawa
发明人： Y. LIN , Tetsuya Ishikawa
IPC分类号： C23C16/52 , B05C11/00
CPC分类号： H01L21/67288 , H01L21/6715
摘要： Systems and methods for monitoring a dispense of a semiconductor process liquid are provided. A motor is driven to dispense the semiconductor process liquid in accordance with a liquid delivery plan. The delivery plan corresponds to a reference profile. A signal profile from a sensor is measured while the motor dispenses the process liquid in accordance with the plan. The measured profile is compared with a reference profile to characterize the dispense.
摘要翻译：提供了用于监测半导体处理液体分配的系统和方法。驱动电动机以根据液体输送计划分配半导体工艺液体。交付计划对应于参考资料。在电机根据计划分配处理液体时，测量来自传感器的信号轮廓。将测量的轮廓与参考轮廓进行比较以表征分配。

35. 发明申请

US20070251456A1 Composite heater and chill plate 审中-公开
标题翻译：复合加热器和冷却板
公开(公告)号：US20070251456A1
公开(公告)日：2007-11-01
申请号：US11414730
申请日：2006-04-27
申请人： Harald Herchen , Sharathchandra Somayaji , Tetsuya Ishikawa , Brian Lue
发明人： Harald Herchen , Sharathchandra Somayaji , Tetsuya Ishikawa , Brian Lue
IPC分类号： C23C16/00
CPC分类号： H01L21/67109
摘要： An integrated system for baking and chilling wafers includes a heater for heating a wafer to an elevated temperature, a chiller for cooling the wafer, and a shuttle operatively connected to the heater and the chiller for transferring the wafer between the heater and the chiller. The chiller further includes a low thermal mass wafer support for providing support to a bottom surface of a wafer and a chill plate coupled to the low thermal mass wafer support for cooling the wafer. The low thermal mass wafer support has a higher thermal conductivity in the plane parallel to the bottom surface of the wafer than in the direction perpendicular to the bottom surface of the wafer. The low thermal mass wafer support can further include a plurality of proximity pins for supporting the wafer.
摘要翻译：用于烘烤和冷却晶片的集成系统包括用于将晶片加热到高温的加热器，用于冷却晶片的冷却器和可操作地连接到加热器的梭子和用于在加热器和冷却器之间传送晶片的冷却器。冷却器还包括用于向晶片的底表面提供支撑的低热质量晶片支撑件和耦合到低热质量晶片支撑件以冷却晶片的冷却板。低热质量晶片支架在垂直于晶片底表面的方向上平行于晶片底表面的平面具有较高的热导率。低热质量晶片支撑件还可以包括用于支撑晶片的多个接近销。

36. 发明授权

US07288746B2 Integrated thermal unit having laterally adjacent bake and chill plates on different planes 有权
标题翻译：集成热单元具有横向相邻的烘烤和冷却板在不同的平面上
公开(公告)号：US07288746B2
公开(公告)日：2007-10-30
申请号：US11174782
申请日：2005-07-05
申请人： David H. Quach , Tetsuya Ishikawa
发明人： David H. Quach , Tetsuya Ishikawa
IPC分类号： H05B3/68 , C23C16/00
CPC分类号： H01L21/67109 , H01L21/67184 , H01L21/67742
摘要： An integrated thermal unit comprising a bake plate having a substrate holding surface configured to hold and heat a substrate in a baking position and a chill plate having a substrate holding surface configured to hold and cool a substrate in a cooling position where the substrate holding surface of the bake plate is positioned in a first substantially horizontal plane when the bake plate is in the baking position and the substrate holding surface of the chill plate is positioned in a second substantially horizontal plane that is below the first plane when the chill plate is in a cooling position.
摘要翻译：一种集成热单元，包括具有被配置为在烘烤位置保持和加热基板的基板保持表面的烘烤板，以及具有基板保持表面的冷却板，所述冷却板被配置为在基板保持表面的基板保持表面的冷却位置保持和冷却基板当烘烤板处于烘烤位置时，烘烤板定位在第一基本上水平的平面中，并且当冷却板处于烘烤位置时，冷却板的基板保持表面定位在第二基本水平的平面内，该第二基本水平的平面位于第一平面之下冷却位置。

37. 发明授权

US07274005B2 Bake plate having engageable thermal mass 有权
标题翻译：烘烤板具有可接合的热质量
公开(公告)号：US07274005B2
公开(公告)日：2007-09-25
申请号：US11174681
申请日：2005-07-05
申请人： David H. Quach , Tetsuya Ishikawa
发明人： David H. Quach , Tetsuya Ishikawa
IPC分类号： H05B3/68 , C23C16/00 , F28F7/00
CPC分类号： H01L21/67184 , H01L21/67742 , H01L21/67748 , H01L21/67751
摘要： A bake station comprising a bake plate adapted to heat a substrate supported on an upper surface of the bake plate, the bake plate vertically moveable between an upper baking position and a lower cooling position; and a plurality of heat sinks adapted to be engageably coupled to a lower surface of the bake plate when the bake plate is in the lower cooling position.
摘要翻译：一种烘烤台，包括适于加热支撑在所述烘烤板的上表面上的基底的烘烤板，所述烘烤板可在上烘烤位置和下冷却位置之间垂直移动; 以及多个散热器，其适于在所述烘烤板处于所述下部冷却位置时可接合地联接到所述烘烤板的下表面。

38. 发明授权

US07255747B2 Coat/develop module with independent stations 有权
标题翻译：具有独立电台的外套/开发模块
公开(公告)号：US07255747B2
公开(公告)日：2007-08-14
申请号：US11111154
申请日：2005-04-20
申请人： Tetsuya Ishikawa , Rick Roberts
发明人： Tetsuya Ishikawa , Rick Roberts
IPC分类号： B05B3/00 , B05B11/02 , B05B15/04 , B05C11/00
CPC分类号： H01L21/67225 , G03B27/32 , G03D13/006 , G03F7/40 , G05B19/41825 , G05B2219/40476 , G05B2219/45031 , G05B2219/49137 , H01L21/67109 , H01L21/6715 , H01L21/67161 , H01L21/67173 , H01L21/67178 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67742 , H01L21/67745 , H01L21/67748 , H01L21/67754 , H01L21/6831 , H01L21/6838 , H01L21/68707 , H01L22/26 , Y02P90/087 , Y10S414/135 , Y10S414/136 , Y10T29/53187 , Y10T29/5323
摘要： An apparatus for dispensing fluid during semiconductor substrate processing operations. The apparatus includes a first processing chamber, a second processing chamber, and a dispense arm assembly. The apparatus further includes a dispense arm access shutter positioned between the first and second processing chambers and moveable between an open and a closed position. The dispense arm assembly can travel from the first processing chamber to the second processing chamber when the dispense arm assembly is in the open position. In an alternative embodiment, the apparatus also includes a central fluid dispense bank between the first and second processing chambers and a second dispense arm access shutter positioned between the first and second processing chambers, wherein the dispense arm access shutter is positioned between the first processing chamber and the central fluid dispense bank and the second dispense arm access shutter is positioned between the central fluid dispense bank and the second processing chamber.
摘要翻译：一种用于在半导体衬底处理操作期间分配流体的装置。该装置包括第一处理室，第二处理室和分配臂组件。该装置还包括分配臂进入快门，其位于第一处理室和第二处理室之间并且可在打开和关闭位置之间移动。当分配臂组件处于打开位置时，分配臂组件可以从第一处理室行进到第二处理室。在替代实施例中，该装置还包括位于第一和第二处理室之间的中央流体分配库和位于第一和第二处理室之间的第二分配臂存取快门，其中分配臂进入快门位于第一处理室并且中央流体分配库和第二分配臂访问快门位于中央流体分配库和第二处理室之间。

39. 发明申请

US20060238954A1 Electrostatic chuck for track thermal plates 审中-公开
标题翻译：轨道热板用静电吸盘
公开(公告)号：US20060238954A1
公开(公告)日：2006-10-26
申请号：US11153974
申请日：2005-06-15
申请人： Tetsuya Ishikawa , Brian Lue
发明人： Tetsuya Ishikawa , Brian Lue
IPC分类号： H01H1/00
CPC分类号： H02N13/00 , H01L21/67103 , H01L21/6831
摘要： A chuck for a semiconductor workpiece features integrated resistive heating and electrostatic bipolar chucking elements on a thermal pedestal. These integrated heating and chucking elements maintain wafer flatness, as well as uniformity of an underlying gap accommodating a thermal gas between the workpiece and the chuck. In accordance with one embodiment of the present invention, a laminated Kapton wafer heater is attached to the top of the thermal surface, under the wafer: At least two electrical voltage zones are isolated within the heater, in order to create a chucking force between the chuck and the wafer without having to contact the wafer with an electrical conductor. These voltage zones can be created by using separate conducting elements as well as by imposing a DC bias on zones including the resistive heating elements.
摘要翻译：用于半导体工件的卡盘在热基座上具有集成的电阻加热和静电双极夹紧元件。这些集成的加热和夹紧元件保持晶圆平坦度，以及在工件和卡盘之间容纳热气体的底部间隙的均匀性。根据本发明的一个实施例，层压的Kapton晶片加热器附着在晶片下面的热表面的顶部：至少两个电压区在加热器内隔离，以便在加热器之间产生夹紧力卡盘和晶片，而不必与电导体接触晶片。这些电压区可以通过使用分离的导电元件以及通过在包括电阻加热元件的区域上施加DC偏压来产生。

40. 发明申请

US20060157201A1 Capacitively coupled plasma reactor with magnetic plasma control 有权
标题翻译：具有磁等离子体控制的电容耦合等离子体反应器
公开(公告)号：US20060157201A1
公开(公告)日：2006-07-20
申请号：US11360944
申请日：2006-02-23
申请人： Daniel Hoffman , Matthew Miller , Jang Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel Hoffman , Matthew Miller , Jang Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

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