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31. 发明申请

US20120202151A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND 有权
标题翻译：正极性组合物，形成耐火模式的方法和聚合物
公开(公告)号：US20120202151A1
公开(公告)日：2012-08-09
申请号：US13454399
申请日：2012-04-24
申请人： Takahiro Dazai , Tomoyuki Hirano , Daiju Shiono , Tasuku Matsumiya
发明人： Takahiro Dazai , Tomoyuki Hirano , Daiju Shiono , Tasuku Matsumiya
IPC分类号： G03F7/039 , C08F28/06
CPC分类号： G03F7/2041 , C08F28/06 , C08F220/28 , C08F228/06 , G03F7/0045 , G03F7/0397
摘要： A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1) (R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group.
摘要翻译：一种正性抗蚀剂组合物，其包含在酸的作用下在碱性显影液中显示出增加的溶解度的碱成分（A）和暴露时产生酸的酸产生剂组分（B），所述碱成分（A）包含高分子化合物 A1），其含有由通式（a0-1）表示的结构单元（a0）（R2表示二价连接基团，R3表示在其环骨架中含有-SO2-的环状基团）和结构单元（a1）得自来自含有酸解离的溶解抑制基团的丙烯酸酯。

32. 发明申请

US20100233625A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND 有权
标题翻译：正极性组合物，形成耐火模式的方法和聚合物
公开(公告)号：US20100233625A1
公开(公告)日：2010-09-16
申请号：US12721240
申请日：2010-03-10
申请人： Tomoyuki Hirano , Tasuku Matsumiya , Daiju Shiono , Takahiro Dazai
发明人： Tomoyuki Hirano , Tasuku Matsumiya , Daiju Shiono , Takahiro Dazai
IPC分类号： G03F7/004 , G03F7/20 , C08F28/06
CPC分类号： G03F7/2041 , C08F212/08 , C08F212/14 , C08F212/32 , C08F220/24 , C08F220/28 , C08F220/30 , C08F2220/1891 , C08F2220/382 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid, and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) having an aromatic group, a structural unit (a5) represented by general formula (a5-1) shown below, and a structural unit (a1) containing an acid-dissociable, dissolution-inhibiting group. In the formula (a5-1), R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof.
摘要翻译：一种正极抗蚀剂组合物，其包含在酸性作用下在碱显影液中显示出增加的溶解度的碱成分（A）和暴露时产生酸的酸发生剂组分（B），所述碱成分（A）包含聚合物含有具有芳香族基团的结构单元（a0）的化合物（A1），下述通式（a5-1）所示的结构单元（a5）和含有酸解离性，溶解抑制性的结构单元（a1）组。式（a5-1）中，R 1表示氢原子，碳原子数1〜5的烷基或碳原子数1〜5的卤代烷基，R 2表示二价连接基，R 3表示含有 -SO2-在其环骨架内。

33. 发明授权

US07592232B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07592232B2
公开(公告)日：2009-09-22
申请号：US12144752
申请日：2008-06-24
申请人： Tomoyuki Hirano
发明人： Tomoyuki Hirano
IPC分类号： H01L21/8234
CPC分类号： H01L21/28123 , H01L29/66545 , H01L29/6656 , H01L29/6659 , H01L29/66606 , H01L29/7833 , Y10S438/954
摘要： A method for manufacturing a semiconductor device, includes the steps of forming a dummy gate insulating film and a dummy gate electrode, forming source and drain regions, forming a first insulating film, forming a second insulating film, removing the second insulating film, simultaneously removing the first insulating film and the second insulating film that remains, while planarizing the first insulating film and the second insulating film that remains, forming a gate electrode trench by removing the dummy gate electrode and the dummy gate insulating film, forming a gate insulating film, and forming a gate electrode, wherein a field effect transistor is formed by the method.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：形成伪栅极绝缘膜和伪栅电极，形成源区和漏区，形成第一绝缘膜，形成第二绝缘膜，去除第二绝缘膜，同时去除保留第一绝缘膜和第二绝缘膜，同时平坦化保留的第一绝缘膜和第二绝缘膜，通过去除伪栅电极和伪栅极绝缘膜形成栅极绝缘膜，形成栅极绝缘膜，形成栅极绝缘膜，以及形成栅电极，其中通过该方法形成场效应晶体管。

34. 发明申请

US20090197204A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND 有权
标题翻译：用于浸渍曝光的耐腐蚀组合物，使用其的形成耐蚀图案的方法和含氟化合物
公开(公告)号：US20090197204A1
公开(公告)日：2009-08-06
申请号：US12360415
申请日：2009-01-27
申请人： Daiju Shiono , Takahiro Dazai , Sanae Furuya , Tomoyuki Hirano , Takayoshi Mori
发明人： Daiju Shiono , Takahiro Dazai , Sanae Furuya , Tomoyuki Hirano , Takayoshi Mori
IPC分类号： G03F7/20 , G03F7/027 , C07C69/593 , C08F14/18 , G03F7/004
CPC分类号： G03F7/0046 , C07C69/653 , C07C69/67 , C07C69/712 , C07C69/757 , C07C2603/00 , C07C2603/84 , C07C2603/86 , C08F12/20 , C08F12/22 , C08F12/32 , C08F220/22 , C08F220/24 , C08F220/26 , C08F220/28 , C09D125/14 , C09D125/18 , G03F7/0048 , G03F7/0382 , G03F7/0397 , G03F7/2041 , C08F212/14 , C08F2220/1833 , C08F212/32 , C08F2220/185 , C08F2220/283 , C08F220/06
摘要： A resist composition for immersion exposure, including a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, an acid generator component (B) that generates acid upon exposure, and a fluorine-containing compound (C) represented by a general formula (c-1) shown below that is decomposable in an alkali developing solution: wherein R1 represents an organic group which may contain a polymerizable group, with the proviso that said polymerizable group has a carbon-carbon multiple bond, and the carbon atoms forming the multiple bond are not directly bonded to the carbon atom within the —C(═O)— group in general formula (c-1); and R2 represents an organic group having a fluorine atom.
摘要翻译：一种用于浸渍曝光的抗蚀剂组合物，包括在酸作用下在碱性显影液中显示出改变的溶解性的基础组分（A），暴露时产生酸的酸产生剂组分（B）和含氟化合物（C）由下述通式（c-1）表示，其可在碱性显影液中分解：其中R1表示可含有可聚合基团的有机基团，条件是所述可聚合基团具有碳 - 碳多重键，以及形成多重键的碳原子不直接键合在通式（c-1）中的-C（-O） - 基团中的碳原子上; R2表示具有氟原子的有机基团。

35. 发明申请

US20090014812A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090014812A1
公开(公告)日：2009-01-15
申请号：US12168427
申请日：2008-07-07
申请人： Junli Wang , Tomoyuki Hirano , Toyotaka Kataoka , Yoshiya Hagimoto
发明人： Junli Wang , Tomoyuki Hirano , Toyotaka Kataoka , Yoshiya Hagimoto
IPC分类号： H01L21/8236 , H01L27/088
CPC分类号： H01L21/82385 , H01L21/823425 , H01L21/823468 , H01L21/823475 , H01L21/823835 , H01L21/823857 , H01L21/823871 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.
摘要翻译：本文公开了一种半导体器件，包括：形成在半导体衬底上的第一组晶体管; 以及形成在所述半导体基板上的第二组晶体管，每个晶体管的工作电压低于所述第一组中的每个晶体管; 其中第一组中的每个晶体管包括通过第一栅极绝缘膜形成在半导体衬底上的第一栅电极和形成在第一栅电极上的硅化物层; 第二组中的每个晶体管包括形成在用于栅极形成的沟槽中的第二栅电极，其通过第二栅极绝缘膜形成在半导体衬底上方的绝缘膜中; 并且形成保护膜以覆盖第一晶体管组的每个第一栅电极上的硅化物层。

36. 发明授权

US07391089B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07391089B2
公开(公告)日：2008-06-24
申请号：US11365313
申请日：2006-03-01
申请人： Shinpei Yamaguchi , Kaori Tai , Tomoyuki Hirano
发明人： Shinpei Yamaguchi , Kaori Tai , Tomoyuki Hirano
IPC分类号： H01L29/78
CPC分类号： H01L21/28044 , H01L29/4916 , H01L29/78
摘要： A semiconductor device which includes a field effect transistor having a gate electrode on the upper side of a semiconductor substrate, with a gate insulation film therebetween, wherein at least the gate insulation film side of the gate electrode includes a film containing hafnium and silicon.
摘要翻译：一种半导体器件，其包括在半导体衬底的上侧具有栅极的场效应晶体管，其间具有栅极绝缘膜，其中栅电极的至少栅极绝缘膜侧包括含有铪和硅的膜。

37. 发明申请

US20050116266A1 Method of producing insulator thin film, insulator thin film, method of manufacturing semiconductor device, and semiconductor device 有权
标题翻译：绝缘体薄膜的制造方法，绝缘体薄膜，半导体装置的制造方法以及半导体装置
公开(公告)号：US20050116266A1
公开(公告)日：2005-06-02
申请号：US10957948
申请日：2004-10-04
申请人： Tomoyuki Hirano
发明人： Tomoyuki Hirano
IPC分类号： H01L21/316 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/205 , H01L21/28 , H01L21/31 , H01L21/314 , H01L21/336 , H01L29/51 , H01L29/78 , H01L29/76 , H01L21/302
CPC分类号： H01L21/28202 , C23C16/401 , C23C16/45529 , H01L21/3142 , H01L21/31608 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L29/518 , H01L2924/0002 , H01L2924/00
摘要： A method of producing an insulator thin film, for forming a thin film on a substrate by use of the atomic layer deposition process, includes a first step of forming a silicon atomic layer on the substrate and forming an oxygen atomic layer on the silicon atomic layer, and a second step of forming a metal atomic layer on the substrate and forming an oxygen atomic layer on the metal atomic layer, wherein the concentration of the metal atoms in the insulator thin film is controlled by controlling the number of times the first step and the second step are carried out.
摘要翻译：一种用于通过原子层沉积工艺在衬底上形成薄膜的绝缘体薄膜的制造方法包括在衬底上形成硅原子层并在硅原子层上形成氧原子层的第一步骤以及在所述基板上形成金属原子层并在所述金属原子层上形成氧原子层的第二工序，其中通过控制所述绝缘体薄膜中的金属原子的浓度来控制所述第一步骤和第二步进行。

38. 发明授权

US06818502B2 Method for forming capacitor 失效
标题翻译：电容器形成方法
公开(公告)号：US06818502B2
公开(公告)日：2004-11-16
申请号：US10774213
申请日：2004-02-06
申请人： Tomoyuki Hirano , Hayato Iwamoto
发明人： Tomoyuki Hirano , Hayato Iwamoto
IPC分类号： H01L21302
CPC分类号： H01L28/84 , H01L21/02068 , H01L27/10852 , H01L28/91
摘要： The invention provides a method for forming a capacitor that enables to form HSG-Si on the entire surface of the exposed surface of a cylindrical bottom electrode. A core pattern is formed on the cylinder core layer on a semiconductor substrate, and an amorphous silicon film is formed so as to cover the core pattern. The amorphous silicon film on the cylinder core layer is removed so that the amorphous silicon film remains on the inside wall of the core pattern, and a bottom electrode comprising the amorphous silicon film is formed on the inside wall of the core pattern. The cylinder core layer that is the component of the core pattern is etching-removed, and then the natural oxide film generated on the surface of the bottom electrode and the amorphous silicon surface layer that is the component of the bottom electrode is etching-removed. Thereafter, HSG-Si is formed on the surface of the bottom electrode.
摘要翻译：本发明提供一种用于形成电容器的方法，该电容器能够在圆柱形底部电极的暴露表面的整个表面上形成HSG-Si。在半导体衬底上的圆筒芯层上形成芯图案，并且形成非晶硅膜以覆盖芯图案。除去气缸芯层上的非晶硅膜，使得非晶硅膜保留在芯图案的内壁上，并且在芯图案的内壁上形成包含非晶硅膜的底电极。蚀刻除去作为芯图案的组分的圆筒芯层，然后蚀刻除去在底电极表面上产生的天然氧化物膜和作为底电极的成分的非晶硅表面层。此后，在底电极的表面上形成HSG-Si。

39. 发明授权

US08952315B2 Solid-state imaging device having a vertical transistor with a dual polysilicon gate 有权
标题翻译：具有具有双多晶硅栅极的垂直晶体管的固态成像装置
公开(公告)号：US08952315B2
公开(公告)日：2015-02-10
申请号：US12574494
申请日：2009-10-06
申请人： Kazunobu Ohta , Tomoyuki Hirano
发明人： Kazunobu Ohta , Tomoyuki Hirano
IPC分类号： H01L27/00 , H01L31/00 , H01L31/113 , H01L27/146 , H01L29/66
CPC分类号： H01L27/14614 , H01L27/14634 , H01L27/14689 , H01L29/66666
摘要： A solid-state imaging device includes: a pixel part having a photoelectric conversion part photoelectrically converting incident light to obtain signal charge; and a peripheral circuit part formed on a periphery of the pixel part on a semiconductor substrate. The pixel part having a vertical transistor that reads out the signal charge from the photoelectric conversion part and a planar transistor that processes the signal charge read out by the vertical transistor. The vertical transistor has a groove part formed on the semiconductor substrate; a gate insulator film formed on an inner surface of the groove part; a conducting layer formed on a surface of the gate insulator film on the semiconductor substrate within and around the groove part; a filling layer filling an interior of the groove part via the gate insulator film and the conducting layer; and an electrode layer connected to the conducting layer on the filling layer.
摘要翻译：一种固态成像装置，包括：像素部，具有光电转换部，对入射光进行光电转换，得到信号电荷; 以及形成在半导体衬底上的像素部分的周围的外围电路部分。像素部分具有从光电转换部读出信号电荷的垂直晶体管和处理由垂直晶体管读出的信号电荷的平面晶体管。垂直晶体管具有形成在半导体衬底上的沟槽部分; 形成在所述槽部的内表面上的栅极绝缘膜; 导电层，形成在所述半导体衬底的所述栅极绝缘膜的表面上，并且在所述沟槽部内和周围; 填充层，其经由所述栅极绝缘膜和所述导电层填充所述槽部的内部; 以及与填充层上的导电层连接的电极层。

40. 发明授权

US08937363B2 Solid-state imaging device and electronic apparatus 有权
标题翻译：固态成像装置和电子装置
公开(公告)号：US08937363B2
公开(公告)日：2015-01-20
申请号：US13426685
申请日：2012-03-22
申请人： Masashi Nakazawa , Tomoyuki Hirano
发明人： Masashi Nakazawa , Tomoyuki Hirano
IPC分类号： H01L31/00 , H01L27/146
CPC分类号： H01L27/14636 , H01L27/1464
摘要： A solid-state imaging device includes a photoelectric conversion film which is interposed between two transparent electrodes outside a semiconductor substrate, wherein a film surface of the photoelectric conversion film is provided so as to incline with respect to a front surface of the semiconductor substrate.
摘要翻译：固态成像装置包括光电转换膜，该光电转换膜介于半导体衬底外部的两个透明电极之间，其中光电转换膜的膜表面设置成相对于半导体衬底的前表面倾斜。

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