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    • 36. 发明申请
    • Multi-Series Battery Control System
    • 多系列电池控制系统
    • US20090130541A1
    • 2009-05-21
    • US12194378
    • 2008-08-19
    • Akihiko EmoriYouhei KawaharaKei SakabeMutsumi KikuchiTatsumi YamauchiAkihiko Kudo
    • Akihiko EmoriYouhei KawaharaKei SakabeMutsumi KikuchiTatsumi YamauchiAkihiko Kudo
    • H01M2/02
    • H02J7/0019H02J7/0022Y02T10/7055
    • A multi-series battery control system comprises battery cell groups each having a plurality of serially connected battery cells, a plurality of integrated circuits each disposed in correspondence to one of the battery cell groups and a battery control device that exchanges signals with the individual integrated circuits. Each integrated circuit includes an address setting means that receives a message unique to the integrated circuit, different from messages sent to other integrated circuits, from the battery control device, writes over an initialized address of the integrated circuit with the message and alters the message to a message with which an initialized address of another integrated circuit cannot be overwritten in a step assigned with an ordinal number matching the position of the integrated circuit with regard to the connection order.
    • 一种多系列电池控制系统,包括:电池单元组,每个电池单元组具有多个串联连接的电池单元;多个集成电路,每个集成电路分别对应于一个电池单元组;以及电池控制装置,其与各个集成电路交换信号 。 每个集成电路包括地址设置装置,其从电池控制装置接收与集成电路独有的消息不同于发送到其他集成电路的消息,用集成电路的初始化地址写入消息并将消息改变为 在分配有与该连接顺序相关的集成电路的位置的序数的步骤中,不能覆盖另一集成电路的初始化地址的消息。
    • 38. 发明授权
    • Semiconductor memory having transistors which drive data lines in
accordance with values of write data and column select signal
    • 具有根据写数据和列选择信号的值驱动数据线的晶体管的半导体存储器
    • US5285414A
    • 1994-02-08
    • US765838
    • 1991-09-26
    • Tatsumi YamauchiMasahiro IwamuraKazutaka Mori
    • Tatsumi YamauchiMasahiro IwamuraKazutaka Mori
    • G11C7/12G11C11/419G11C11/40
    • G11C7/12G11C11/419
    • A semiconductor memory comprises a write driver which is provided to correspond to respective data line and by which data lines connected with a memory cell through the control of a word line are driven in a write operation. The write driver includes MOSFETs of first group and MOSFETs of second group. In a case where a write enable signal does not designate the write operation, the MOSFETs of the first group are normally in ON states to pull up the data lines. Besides, in a case where the write enable signal designates the write operation, each of them operates in accordance with the value of input data, to maintain the ON states and pull up the corresponding data line in case of driving the data line to a "high" level and to fall into OFF states in case of driving the data line to a "low" level. On the other hand, the MOSFETs of the second group are normally in OFF states. Besides, in the case where the write enable signal designates the write operation, each of them operates in accordance with the value of the input data, to fall into ON state and draw the corresponding data line to the low level in the case of driving the data lines to the low level.
    • 半导体存储器包括写驱动器,其被提供以对应于相应的数据线,并且通过字线的控制与存储器单元连接的数据线在写入操作中被驱动。 写驱动器包括第一组的MOSFET和第二组的MOSFET。 在写入使能信号不表示写入操作的情况下,第一组的MOSFET通常处于ON状态以上拉数据线。 此外,在写入使能信号指定写入操作的情况下,它们中的每一个根据输入数据的值进行操作,以在将数据线驱动到“ 高“电平并且在将数据线驱动到”低“电平的情况下落入OFF状态。 另一方面,第二组的MOSFET通常处于OFF状态。 此外,在写入使能信号指定写入操作的情况下,它们中的每一个根据输入数据的值进行操作以进入ON状态,并且在驱动该操作的情况下将相应的数据线绘制到低电平 数据线到低电平。