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31. 发明授权

US08828139B2 Method of manufacturing sapphire seed and method of manufacturing sapphire single crystal 有权
标题翻译：制造蓝宝石种子的方法及制造蓝宝石单晶的方法
公开(公告)号：US08828139B2
公开(公告)日：2014-09-09
申请号：US13161170
申请日：2011-06-15
申请人： Masato Imai , Kouzou Nakamura
发明人： Masato Imai , Kouzou Nakamura
IPC分类号： C30B15/36 , C30B15/00
CPC分类号： C30B15/00 , C30B15/36 , C30B29/20 , G02B1/02
摘要： Methods of manufacturing a sapphire seed for growing a crystal having reduced dislocation density. The present invention provides a method of manufacturing a sapphire seed formed by a sapphire single crystal and used for growing another sapphire single crystal on a (0001) face as a crystal growing surface, the method comprising: preparing a sapphire seed whose side face forms a crystal face within a {1-100} face±10 °, and whose shape is processed so as to include a hexagonal prism or a triangle prism; and applying a predetermined thermal treatment to said sapphire seed.
摘要翻译：制造用于生长具有降低的位错密度的晶体的蓝宝石种子的方法。本发明提供一种制造由蓝宝石单晶形成的蓝宝石种子的方法，用于在（0001）面上生长另一蓝宝石单晶作为晶体生长面，该方法包括：制备其侧面形成蓝宝石种子 {1-100}面±10°内的晶面，其形状被加工成包括六棱柱或三角棱镜; 以及对所述蓝宝石种子进行预定的热处理。

32. 发明授权

US08441584B2 Stereoscopic image displaying apparatus 有权
标题翻译：立体图像显示装置
公开(公告)号：US08441584B2
公开(公告)日：2013-05-14
申请号：US12854344
申请日：2010-08-11
申请人： Tsuyoshi Ohyama , Masato Imai , Tsutomu Tanaka
发明人： Tsuyoshi Ohyama , Masato Imai , Tsutomu Tanaka
IPC分类号： G02F1/1343 , G02F1/1335 , G02B27/22
CPC分类号： G02B27/2214 , G02F1/134309 , H04N13/315 , H04N13/317 , H04N13/356
摘要： A stereoscopic image displaying apparatus is provided. The stereoscopic image displaying apparatus, including: an image generation section having a plurality of pixels for a plurality of colors arranged in a two-dimensional matrix and adapted to drive the pixels for the colors to generate a color image; and a parallax applying section adapted to apply a parallax to the image to allow color display of a three-dimensional image and capable of changing over a parallax direction between a first direction of the color image and a second direction perpendicular to the first direction. The parallax applying section has a first parallel state and a second parallel state. The image generation section and the parallax application section are configured so that the rates of the colors at the pixels for the colors corresponding to light transmission regions between adjacent ones of the parallax barrier regions are uniform or got closer in both of the parallel states.
摘要翻译：提供立体图像显示装置。所述立体图像显示装置包括：图像生成部，具有以二维矩阵排列的多种颜色的多个像素，适于驱动所述颜色的像素，生成彩色图像; 以及视差施加部，其适于对所述图像施加视差，以允许三维图像的彩色显示，并且能够在所述彩色图像的第一方向和垂直于所述第一方向的第二方向之间的视差方向上变化。视差施加部具有第一平行状态和第二平行状态。图像生成部和视差施加部被配置为使得与相邻的视差屏障区域中的光透射区域对应的颜色的像素的颜色的速率在两个并行状态下均匀或更接近。

33. 发明授权

US07218366B2 Transreflective LCD having color adjusting windows substantially same size and shape, but different in number in at least 2 different colors 有权
标题翻译：透反射LCD具有基本上相同尺寸和形状的颜色调整窗口，但在至少2种不同颜色中数量不同
公开(公告)号：US07218366B2
公开(公告)日：2007-05-15
申请号：US11311569
申请日：2005-12-19
申请人： Shinji Nakamura , Masato Imai , Yoko Fukunaga , Akira Maehara
发明人： Shinji Nakamura , Masato Imai , Yoko Fukunaga , Akira Maehara
IPC分类号： G02F1/1335
CPC分类号： G02F1/133514 , G02F1/133526 , G02F1/133555
摘要： A liquid crystal display device, by which a reduction of costs of a color filter is realized and declining of the transmittance or reflectance due to an alignment error is suppressed, comprising a pair of substrates arranged facing to each other over a liquid crystal layer, wherein one substrate is formed pixels PXL arranged in matrix. Each pixel is formed a reflection portion for reflecting an outside light and a transmission portion for transmitting a light. The other substrate is formed a color filter colored to be different colors (red, green and blue) corresponding to respective pixels. One or more color adjusting windows CFW having a coloring concentration of zero or less than that of other portions are provided on reflection regions CFR superposing with reflection portions inside pixel regions corresponding to respective pixels.
摘要翻译：一种液晶显示装置，通过该液晶显示装置实现滤色器的成本降低，并且抑制了由于取向误差引起的透射率或反射率的下降，包括在液晶层上彼此面对布置的一对基板，其中一个衬底形成矩阵排列的像素PXL。每个像素形成用于反射外部光的反射部分和用于透射光的透射部分。另一基板形成为对应于各像素而着色为不同颜色（红，绿，蓝）的滤色片。在与各个像素对应的像素区域内的反射部分重叠的反射区域CFR上设置一个或多个着色浓度为零或小于其它部分的颜色调整窗口CFW。

34. 发明申请

US20050042528A1 Mask for photolithography, method of forming thin film, liquid crystal display device, and method of producing the liquid crystal display device 有权
标题翻译：光刻用掩模，薄膜形成方法，液晶显示装置以及液晶显示装置的制造方法
公开(公告)号：US20050042528A1
公开(公告)日：2005-02-24
申请号：US10953301
申请日：2004-09-29
申请人： Masato Imai , Akira Maehara , Yoko Fukunaga
发明人： Masato Imai , Akira Maehara , Yoko Fukunaga
IPC分类号： G02F1/1343 , G02F1/1333 , G02F1/1335 , G03F1/00 , G03F1/26 , G03F1/28 , G03F1/68 , G03F1/70 , H01L21/027 , G03F9/00 , G03C5/00
CPC分类号： G02F1/133555 , G02F1/133514 , G02F2001/136236 , G03F1/26 , G03F1/50 , Y10T428/1095
摘要： A mask for photolithography in which a semi-transmission film is formed so that the phase difference of lights passing through a semi-transmission portion and a transmission portion of the mask for photolithography is between (−¼+2 m) π and (¼+2 m) π inclusive, where m is an integer. The invention makes it possible to efficiently and properly form a thin film having a multi-step structure by a single process.
摘要翻译：一种用于光刻的掩模，其中形成半透射膜，使得通过光刻的掩模的半透射部分和透射部分的光的相位差在（-¼+2μm）pi和（¼+ 2 m）pi，其中m是整数。本发明使得可以通过单一工艺有效且适当地形成具有多步结构的薄膜。

35. 发明授权

US06721024B1 Liquid crystal display device 失效
标题翻译：液晶显示装置
公开(公告)号：US06721024B1
公开(公告)日：2004-04-13
申请号：US09612389
申请日：2000-07-07
申请人： Katsuhiko Kishimoto , Toshihisa Uchida , Masato Imai
发明人： Katsuhiko Kishimoto , Toshihisa Uchida , Masato Imai
IPC分类号： G02F113
CPC分类号： G02F1/133707 , G02F1/133753 , G02F1/1397 , G02F2001/133374 , G02F2001/133757
摘要： The liquid crystal display device of the present invention includes a first substrate, a second substrate, and a liquid crystal layer sandwiched by the first and second substrates. The first substrate includes polymer walls made of a transparent resin, the liquid crystal layer has a plurality of liquid crystal regions separated from one another by the polymer walls, and liquid crystal molecules in the plurality of liquid crystal regions are aligned axially symmetrically with respect to respective axes formed in the plurality of liquid crystal regions, the axes being vertical to a surface of the first substrate, and liquid crystal molecules above the polymer walls are aligned axially symmetrically with respect to respective axes formed on the polymer walls, the axes being vertical to the surface of the first substrate.
摘要翻译：本发明的液晶显示装置包括第一基板，第二基板以及被第一基板和第二基板夹持的液晶层。第一基板包括由透明树脂制成的聚合物壁，液晶层具有通过聚合物壁彼此分离的多个液晶区域，并且多个液晶区域中的液晶分子相对于形成在多个液晶区域中的各轴，该轴垂直于第一基板的表面，并且聚合物壁上方的液晶分子相对于形成在聚合物壁上的相应轴线轴对称地排列，轴是垂直的到第一基板的表面。

36. 发明授权

US06323140B1 Method of manufacturing semiconductor wafer 失效
标题翻译：制造半导体晶片的方法
公开(公告)号：US06323140B1
公开(公告)日：2001-11-27
申请号：US09646718
申请日：2001-02-26
申请人： Masanori Mayusumi , Masato Imai , Kazutoshi Inoue , Shinji Nakahara
发明人： Masanori Mayusumi , Masato Imai , Kazutoshi Inoue , Shinji Nakahara
IPC分类号： H01L2131
CPC分类号： C30B29/06 , C30B25/02 , H01L21/02488 , H01L21/02532 , H01L21/0262 , Y10S438/906
摘要： Disclosed is a method for manufacturing a semiconductor wafer having an epitxial layer on a surface thereof, by the steps of forming a pritective oxide film on a surface of a semiconductor wafer prior to loading of the wafer into an eptaxial growth furnace, removing the protective oxide film formed on the surface of the wafer by heating after the wafer is loaded in the furnace, and performing epitaxial growth of the epitaxial layer on the surface from which the protective oxide film is removed in the furnace. The protective oxide film is removed by heating the wafer in the furnace in an ambience of hydrogen gas at a pressure ranging from 0.0133×105 Pa to 1.013×105 Pa and at a temperature ranging from 800° C. to 1,000 ° C., or by heating the wafer in the furnace at a pressure of 5×106 Pa or under and at a temperature ranging from 800° C. to 1,000° C.
摘要翻译：本发明公开了一种在其表面上具有外延层的半导体晶片的制造方法，其特征在于，在将晶片装入轴向生长炉之前，在半导体晶片的表面形成保护性氧化膜，除去保护氧化物在晶片装载到炉中之后通过加热在晶片的表面上形成的膜，并且在炉中除去保护性氧化物膜的表面上进行外延层的外延生长。通过在氢气气氛中在0.0133×10 5 Pa〜1.013×10 5 Pa的压力范围内，在800〜1000℃的温度范围内加热炉内的晶片，或者通过加热来除去保护性氧化膜炉中的晶片在5×10 6 Pa的压力下或在800℃至1000℃的温度下。

37. 发明授权

US06245152B1 Method and apparatus for producing epitaxial wafer 失效
标题翻译：用于生产外延晶片的方法和设备
公开(公告)号：US06245152B1
公开(公告)日：2001-06-12
申请号：US08885904
申请日：1997-06-30
申请人： Masato Imai , Masanori Mayusumi , Shinji Nakahara , Kazutoshi Inoue
发明人： Masato Imai , Masanori Mayusumi , Shinji Nakahara , Kazutoshi Inoue
IPC分类号： C23C1600
CPC分类号： C30B25/12 , C30B25/02 , C30B25/08
摘要： A method and apparatus for forming an epitaxial layer on a semiconductor wafer supported on a suscepter in an epitaxial growth furnace. Ther wafer to be processed is placed on the suscepter outside the furnace. The suscepter carrying the wafer is transferred into the furnace from the outside thereof and mounted in a loading position within the furnace. An epitaxial growth process is then performed on the wafer on the suscepter mounted in the loading position. After the completion of the growth process, the suscepter carrying the wafer thereon is removed from the furnace loading position and transferred to the outside of the furnace.
摘要翻译：一种用于在外延生长炉中支撑在一个可变体上的半导体晶片上形成外延层的方法和装置。待处理的晶片被放置在熔炉外部的火焰探测器上。承载晶片的容器从外部被转移到炉中并安装在炉内的装载位置。然后在安装在装载位置上的夹持器上的晶片上执行外延生长工艺。在生长过程完成之后，携带其上的晶片的容器从炉装载位置移除并转移到炉外。

38. 发明授权

US6147721A Ultraviolet filter for plasma addressed liquid crystal display 失效
标题翻译：用于等离子体寻址液晶显示器的紫外线滤光片
公开(公告)号：US6147721A
公开(公告)日：2000-11-14
申请号：US32041
申请日：1998-02-27
申请人： Masanobu Tanaka , Masato Imai , Tomoya Yano , Kiyoshige Matsuura
发明人： Masanobu Tanaka , Masato Imai , Tomoya Yano , Kiyoshige Matsuura
IPC分类号： G02F1/1333 , G02F1/133 , G02F1/1335 , G09F9/313 , H01J17/04
CPC分类号： G02F1/13334 , G02F1/133509
摘要： Disclosed is a plasma addressed liquid crystal display improved to prevent deterioration of liquid crystal and an alignment film due to ultraviolet rays generated by plasma discharge. The plasma addressed liquid crystal display includes a liquid crystal cell including columns of signal electrodes, a plasma cell including rows of discharge channels, and an intermediate thin glass sheet through which the liquid crystal cell is joined to the plasma cell. The thin glass sheet includes an ultraviolet ray transmission preventive layer having a function of absorbing or reflecting ultraviolet rays generated in the discharge channels on the plasma cell side thereby preventing the ultraviolet rays from being made incident on the liquid crystal cell side.
摘要翻译：公开了一种等离子体寻址液晶显示器，其改进以防止由于等离子体放电产生的紫外线引起的液晶劣化和取向膜。等离子体寻址液晶显示器包括：包括信号电极列的液晶单元，包括排列通道排列的等离子体单元和液晶单元通过其连接到等离子体单元的中间薄玻璃板。薄玻璃板包括具有吸收或反射在等离子体单元侧的放电通道中产生的紫外线的功能的紫外线透射防止层，从而防止紫外线入射到液晶单元侧。

39. 发明授权

US5488923A Method for producing single crystal 失效
标题翻译：单晶生产方法
公开(公告)号：US5488923A
公开(公告)日：1996-02-06
申请号：US399558
申请日：1995-03-07
申请人： Masato Imai , Hiroyuki Noda , Yutaka Shiraishi , Keishi Niikura , Shoei Kurosaka
发明人： Masato Imai , Hiroyuki Noda , Yutaka Shiraishi , Keishi Niikura , Shoei Kurosaka
IPC分类号： C30B15/02 , C30B29/06 , H01L21/208 , C30B15/04
CPC分类号： C30B15/02
摘要： The present invention employs the construction wherein a resistor heater is disposed inside a protective cylinder whose tip is open to a molten liquid packing zone of a crucible inside a pulling apparatus so that the resistor heater is above the tip of a lower portion and temperature setting can be made so as to be capable of fusing a starting material. Since the tip of the protective cylinder is positioned inside the molten liquid at the time of pulling of a single crystal, the gaseous phase portion inside the protective cylinder and the gaseous phase portion inside the pulling apparatus are separated apart by the molten liquid and are independent of each other and a starting material polycrystal rod loaded into the protective cylinder can be supplied to the molten liquid surface inside the crucible while being molten at the lower part of the protective cylinder by the resistor heater. In this manner, the single crystal whose impurity concentration is substantially uniform in the longitudinal direction can be grown continuously.
摘要翻译：本发明采用这样一种结构，其中电阻器加热器设置在保护筒内部，其顶端与拉制装置内的坩埚的熔融液体包装区域打开，使得电阻器加热器在下部的尖端上方，并且温度设定可以使其能够熔化起始材料。由于在拉制单晶时保护筒的尖端位于熔融液体内部，所以保护筒内部的气相部分和拉动装置内部的气相部分被熔融液体分开，并且是独立的并且通过电阻加热器在保护筒的下部熔融时，可以将加载到保护筒中的原料多晶棒供给到坩埚内的熔融液面。以这种方式，可以连续生长杂质浓度在纵向方向上基本均匀的单晶。

40. 发明申请

US20090170292A1 Method for producing semiconductor substrate and semiconductor substrate 审中-公开
标题翻译：半导体衬底和半导体衬底的制造方法
公开(公告)号：US20090170292A1
公开(公告)日：2009-07-02
申请号：US11658949
申请日：2005-07-27
申请人： Masato Imai , Yoshiji Miyamura
发明人： Masato Imai , Yoshiji Miyamura
IPC分类号： H01L21/20
CPC分类号： H01L21/26533 , H01L21/76243
摘要： A production method for a semiconductor substrate for producing a high quality SGOI substrate 10 in which the dislocation density in a silicon germanium Si1-yGey layer (SGOI layer) formed on an embedded oxide film is reduced and the occurrence of defects is suppressed, by employing the SIMOX method, or a semiconductor substrate. The SGOI substrate is produced by adjusting the composition ratio (x) of the germanium Ge in the silicon germanium Si1-xGex layer prior to the SIMOX method processing, to a composition ratio of a predetermined ratio or less in which the dislocation density in the silicon germanium Si1-yGey layer after the SIMOX method processing becomes a predetermined level or less. Preferably the composition ratio (x) is adjusted to a composition ratio in which the dislocation density in the silicon germanium Si1-yGey layer (SGOI layer) after the SIMOX method processing becomes 106 cm−2 or less. Also preferably, the composition ratio (x) of the germanium Ge in the silicon germanium Si1-xGex layer prior to the SIMOX method processing is set to 0.05 (5%) or less.
摘要翻译：一种用于制造高质量SGOI衬底10的半导体衬底的制造方法，其中通过使用在衬底氧化膜上形成的硅锗Si1-yGey层（SGOI层）中的位错密度降低并且缺陷的发生被抑制 SIMOX方法或半导体衬底。通过将SIMOX法处理前的硅锗Si1-xGex层中的锗Ge的组成比（x）调整为硅中的位错密度的规定比例以下的组成比来制造SGOI基板在SIMOX方法处理之后的锗Si1-yGey层变为预定水平或更低。优选将组成比（x）调整为SIMOX法处理后的硅锗Si1-yGey层（SGOI层）中的位错密度为106cm -2以下的组成比。还优选地，将SIMOX法处理之前的硅锗Si1-xGex层中的锗Ge的组成比（x）设定为0.05（5％）以下。

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