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    • 34. 发明申请
    • Ceramic electronic device and the production method
    • 陶瓷电子器件及其制作方法
    • US20080293560A1
    • 2008-11-27
    • US12219594
    • 2008-07-24
    • Kazushige ItoAkira Sato
    • Kazushige ItoAkira Sato
    • C04B35/10
    • H01G4/10
    • A ceramic electronic device including a dielectric layer, wherein the dielectric layer includes a main component expressed by a composition formula of BamTiO2+m, wherein “m” satisfies 0.995≦m≦1.010 and a ratio of Ba and Ti satisfies 0.995≦Ba/Ti≦1.010, and a subcomponent (a sixth subcomponent) including an oxide of Al; and a content of the Al compound is 0 to 4.0 moles (note that 0 is not included) in terms of Al2O3 with respect to 100 moles of the main component; and preferably, the dielectric layer includes a segregation phase, and the segregation phase includes an oxide of Al.
    • 1.一种陶瓷电子器件,其特征在于,所述电介质层包括由组成式为BamTiO 2 + m表示的主成分,其中,“m”满足0.995≤m≤1.010,Ba与Ti的比例满足0.995 < Ba / Ti <= 1.010,以及包含Al的氧化物的副成分(第六副成分) Al化合物的含量相对于100摩尔主成分为0〜4.0摩尔(注意,不包括0)。 并且优选地,电介质层包括偏析相,并且偏析相包括Al的氧化物。
    • 40. 发明申请
    • Ceramic electronic device and production method thereof
    • 陶瓷电子器件及其制造方法
    • US20060088719A1
    • 2006-04-27
    • US11247180
    • 2005-10-12
    • Kazushige ItoAkira Sato
    • Kazushige ItoAkira Sato
    • B32B15/04B32B9/00B32B19/00
    • H01G4/1218
    • A highly reliable ceramic electronic device having an excellent temperature characteristic of a capacitance and a low IR temperature dependency, comprising a dielectric layer: wherein the dielectric layer includes a main component expressed by a composition formula of BamTiO2+m, wherein “m” satisfies 0.995≦m≦1.010 and a ratio of Ba and Ti satisfies 0.995≦Ba/Ti≦1.010, and, as subcomponents, an oxide of Al and an oxide of Si or an oxide of R (note that R is at least one kind selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu); and includes a secondary phase composed of at least a part of the oxide of Al and at least a part of the oxide of Si or the oxide of R and being different from a main phase mainly composed of the main component; and the production method are provided.
    • 一种具有优异的电容温度特性和低IR温度依赖性的高度可靠的陶瓷电子器件,包括电介质层:其中所述电介质层包括由组成式Ba≠TiO 2表示的主要成分 其中“m”满足0.995 <= m <= 1.010,Ba和Ti的比例满足0.995 <= Ba / Ti <= 1.010,作为次要成分的Al的氧化物 和Si的氧化物或R的氧化物(注意,R为选自Sc,Y,La,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm中的至少一种 ,Yb和Lu); 并且包括由Al的氧化物的至少一部分和Si的氧化物的至少一部分或R的氧化物组成的第二相,并且与主要由主要成分构成的主相不同; 并提供制造方法。