专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20080113510A1 Semiconductor Wafer Fabricating Method and Semiconductor Wafer Mirror Edge Polishing Method 审中-公开
标题翻译：半导体晶圆制造方法和半导体晶圆镜边缘抛光方法
公开(公告)号：US20080113510A1
公开(公告)日：2008-05-15
申请号：US11883341
申请日：2006-02-07
申请人： Tadahiro Kato , Hideo Kudo
发明人： Tadahiro Kato , Hideo Kudo
IPC分类号： H01L21/306
CPC分类号： H01L21/02008 , B24B9/065 , B24B37/08 , H01L21/02021
摘要： There is provided a semiconductor wafer fabricating method comprising at least: a double-side polishing step of mirror-polishing a front surface and a back surface of a semiconductor wafer; and a mirror edge polishing step of mirror-polishing a chamfered part of the double-side-polished semiconductor wafer, wherein a protection film made of a resin which suppresses polishing is formed on the front surface or both the front and back surfaces of the semiconductor wafer after the double-side polishing step, then the mirror edge polishing step is carried out, and thereafter the protection film made of a resin is removed. As a result, it is possible to provide a step of eliminating an increase in a cost due to, e.g., a facility investment or an increase in the number of steps as much as possible, removing a scratch or an impression on an edge surface of the chamfered part of the semiconductor wafer, and suppressing excessive polishing caused when a polishing pad enters a main surface of the wafer at the mirror edge polishing step of mirror-polishing the chamfered part of the wafer, thereby preventing a wafer outer peripheral shape, especially an edge roll-off from being degraded.
摘要翻译：提供一种半导体晶片制造方法，该方法至少包括：对半导体晶片的前表面和后表面进行镜面抛光的双面抛光步骤; 以及镜面研磨双面抛光半导体晶片的倒角部分的镜面抛光步骤，其中在半导体的前表面或前表面和后表面上形成由抑制抛光的树脂制成的保护膜在进行双面研磨工序之后，进行镜面研磨工序，然后除去由树脂构成的保护膜。结果，可以提供如下步骤：消除由于例如设施投资而造成的成本的增加或者尽可能多地增加步骤数量，从而消除边缘表面上的划痕或印象半导体晶片的倒角部分，并且当在抛光晶片的倒角部分的镜面抛光步骤中抛光垫进入晶片的主表面时抑制多余的抛光，从而防止晶片外周形状，特别是边缘滚降降低。

32. 发明授权

US06402594B1 Polishing method for wafer and holding plate 失效
标题翻译：晶圆和保持板抛光方法
公开(公告)号：US06402594B1
公开(公告)日：2002-06-11
申请号：US09474084
申请日：1999-12-29
申请人： Daisuke Kobayashi , Tsuyoshi Matsuzaki , Hideo Kudo
发明人： Daisuke Kobayashi , Tsuyoshi Matsuzaki , Hideo Kudo
IPC分类号： B24B100
CPC分类号： H01L21/02024 , B24B37/30
摘要： A polishing method for wafer, comprises the steps of; adhering a wafer to a wafer adhesion part of a holding plate through a wax, and rubbing the wafer with a polishing pad, wherein grooves are formed on the wafer adhesion part and extend to the outside of the wafer adhesion part.
摘要翻译：一种晶片抛光方法，包括以下步骤：将晶片通过蜡粘合到保持板的晶片粘合部分上，并用抛光垫摩擦晶片，其中在晶片粘附部分上形成沟槽并延伸到晶片粘附部分的外部。

33. 发明授权

US6050880A Surface grinding device and method of surface grinding a thin-plate workpiece 失效
公开(公告)号：US6050880A
公开(公告)日：2000-04-18
申请号：US996190
申请日：1997-12-22
申请人： Tadahiro Kato , Sadayuki Okuni , Hideo Kudo , Hiroshi Tomioka
发明人： Tadahiro Kato , Sadayuki Okuni , Hideo Kudo , Hiroshi Tomioka
IPC分类号： B24B7/04 , B24B7/22 , B24B1/00
CPC分类号： B24B37/30 , B24B7/228
摘要： A surface grinding method for a thin-plate workpiece is provided including the steps of (a) roughly surface grinding a first surface of a thin-plate workpiece using a thin-plate workpiece surface grinding device to create a reference plane having no sori or waviness; (b) inverting the thin-plate workpiece, the first surface of which has been roughly surface ground and, with a surface grinding device having a hard chucking plate, chucking the first surface to the hard chucking plate to roughly surface grind a second surface of the thin-plate workpiece; (c) chucking to the hard chucking plate the first surface of the thin-plate workpiece, the second surface of which has been roughly surface ground with the surface grinding device having the hard chucking plate to further finely surface grind the second surface of the thin-plate workpiece; and (d) inverting the thin-plate workpiece, the second surface of which has been finely surface ground and, with the surface grinding device having the hard chucking plate, chucking the second surface to the hard chucking plate to further finely surface grind the first surface of the thin-plate workpiece, wherein the surface grinding device comprising a surface grinding element; and a holding element for holding the thin-plate workpiece to be surface ground, wherein the holding element is a soft holding element. An alternate surface grinding method for a thin-plate workpiece is also provided in which steps (a) and (b) are the same as above and in which steps (c) and (d) are as follows: (c) chucking to the hard chucking plate the second surface of the thin-plate workpiece, the second surface of which has been roughly surface ground with the surface grinding device having the hard chucking plate to finely surface grind the first surface of the thin-plate workpiece; and (d) inverting the thin-plate workpiece, the first surface of which has been finely surface ground and, with the surface grinding device having the hard chucking plate, chucking the second surface to the hard chucking plate to finely surface grind the second surface of the thin-plate workpiece.

34. 发明授权

US5951374A Method of polishing semiconductor wafers 失效
标题翻译：抛光半导体晶片的方法
公开(公告)号：US5951374A
公开(公告)日：1999-09-14
申请号：US789046
申请日：1997-01-28
申请人： Tadahiro Kato , Hisashi Masumura , Masami Nakano , Hideo Kudo
发明人： Tadahiro Kato , Hisashi Masumura , Masami Nakano , Hideo Kudo
IPC分类号： H01L21/683 , H01L21/304 , H01L21/306 , B24B1/00
CPC分类号： H01L21/02024 , B24B37/30
摘要： A method of polishing semiconductor wafers includes a double side primary polishing step and a single side secondary polishing step using a single side polishing machine with a wafer holder including a template so bonded on a carrier plate as having one or more wafer receiving holes in which backing pads are disposed respectively for holding the back sides of the respective wafers fittingly received therein. This method makes it to possible to hold a plurality of wafers at one time due to batch processing to thereby improve the productivity, and decrease extremely the generation of the defective dimples in the front side of the wafer. Compared with conventional single side polishing, the flatness level of the wafer polished with the double side polishing machine in this method is improved.
摘要翻译：抛光半导体晶片的方法包括双面一次抛光步骤和单面二次抛光步骤，其使用单面抛光机，其具有包括模板的晶片保持器，所述晶片保持器结合在载体板上，具有一个或多个晶片接收孔，其中背衬分别设置衬垫，用于将各个晶片的后侧保持在其中。该方法使得可以通过批量处理一次保持多个晶片，从而提高生产率，并且极大地减少晶片正面中缺陷凹坑的产生。与传统的单面抛光相比，该方法中用双面抛光机抛光的晶片的平坦度提高。

35. 发明授权

US5942445A Method of manufacturing semiconductor wafers 失效
标题翻译：制造半导体晶圆的方法
公开(公告)号：US5942445A
公开(公告)日：1999-08-24
申请号：US823746
申请日：1997-03-25
申请人： Tadahiro Kato , Hisashi Masumura , Sadayuki Okuni , Hideo Kudo
发明人： Tadahiro Kato , Hisashi Masumura , Sadayuki Okuni , Hideo Kudo
IPC分类号： B24B1/00 , C30B33/00 , H01L21/302 , H01L21/304 , H01L21/306
CPC分类号： H01L21/02013 , C30B33/00 , H01L21/02008 , H01L21/02019
摘要： According to the invention, the flatness and quality can be improved while simplifying the process even when large size wafers of 200 to 300 mm or above are processed. Basic steps involved are a slicing step E for obtaining thin disc-shape wafers by slicing, a chamfering step F for chamfering the sliced wafers, a flattening step G for flattening the chamfered wafers, an alkali etching step H for removing process damage layers from the flattened wafers, and a double-side polishing step K of simultaneously polishing the two sides of the etched wafers. If necessary, a plasma etching step is used in lieu of the flattening and etching steps G and H respectively.
摘要翻译：根据本发明，即使处理200〜300mm以上的大尺寸晶片，也能够在简化工序的同时提高平坦度和质量。所涉及的基本步骤是通过切片获得薄盘形晶片的切片步骤E，用于倒角切片晶片的倒角步骤F，用于使倒角晶片平坦化的平坦化步骤G，用于从工艺损伤层去除工艺损伤层的碱蚀刻步骤H 平坦化的晶片，以及双面研磨工序K，同时抛光被蚀刻的晶片的两面。如果需要，分别使用等离子体蚀刻步骤代替平坦化和蚀刻步骤G和H.

36. 发明授权

US5759087A Method for inducing damage for gettering to single crystal silicon wafer 失效
标题翻译：诱导吸收单晶硅晶片的方法
公开(公告)号：US5759087A
公开(公告)日：1998-06-02
申请号：US435656
申请日：1995-05-05
申请人： Hisashi Masumura , Masami Nakano , Hideo Kudo
发明人： Hisashi Masumura , Masami Nakano , Hideo Kudo
IPC分类号： H01L21/304 , H01L21/306 , H01L21/322
CPC分类号： H01L21/02024 , B24B37/042 , H01L21/3221
摘要： A method for inducing damage for gettering to the rear surface of a single crystal silicon wafer by polishing the rear surface, which can provide a good gettering effect to the wafer and can also depress dusting characteristics of the rear surface of the wafer, is disclosed. The method comprises the steps of; moving the wafer on an abrasive cloth relatively, and supplying an abrasive liquid having a pH in the range of 4-9 which contains silica particles having an average diameter in the range of 0.1-10 .mu.m as abrasive grains, between the wafer and the abrasive cloth.
摘要翻译：公开了一种通过抛光后表面而引起对单晶硅晶片背表面吸引的损伤的方法，其可以为晶片提供良好的吸气效果，并且还可以抑制晶片后表面的除尘特性。该方法包括以下步骤：相对地将研磨布移动到晶片上，并且将晶片和晶片之间的平均粒径为0.1-10μm的二氧化硅粒子作为磨粒供给pH为4-9的研磨液砂布。

37. 发明授权

US5595412A Device for handling wafers 失效
标题翻译：处理晶圆的装置
公开(公告)号：US5595412A
公开(公告)日：1997-01-21
申请号：US352654
申请日：1994-12-09
申请人： Hideo Kudo , Isao Uchiyama
发明人： Hideo Kudo , Isao Uchiyama
IPC分类号： B08B11/04 , B08B3/04 , B65G49/07 , H01L21/304 , H01L21/677 , H01L21/687 , B66C1/42
CPC分类号： H01L21/68707 , H01L21/67781 , Y10S294/907 , Y10S414/141
摘要： The present invention provides a device for handling wafers with every group of more than one that is built in a cassette-less automatic wafer cleaning apparatus, wherein the group of wafers are washed at a time which does not require very high accuracy in positioning the wafers and may accommodate the wafers of any different diameters, the device for handling wafers comprising: external hollow shafts and internal shafts inserted and freely slidable within the inside of the external hollow shafts; a drive mechanism, wherein each pair of the external hollow shafts and the internal shafts are movable in their respective opposed directions by the same distances with a timing belt and a drive motor for driving the timing belt; a pair of handling members respectively held fast at pairs of ends side by side of each pair of the external hollow shafts and the internal shafts; and a plurality of supporting structures holding the wafers provided on the respective opposed surfaces of handling members.
摘要翻译：本发明提供了一种用于处理晶片的装置，其中每组不止一个内置在无盒式自动晶片清洁装置中，其中该组晶片在不需要非常高的精度定位晶片的时候被清洗并且可以容纳任何不同直径的晶片，用于处理晶片的装置包括：外部中空轴和在外部空心轴内部插入和自由滑动的内轴; 驱动机构，其中每对外部空心轴和内部轴可以在其相对的相对方向上与同步带和用于驱动同步皮带的驱动马达相同距离移动; 一对处理构件分别在每对外部中空轴和内部轴的并列端部分别地保持; 以及多个支撑结构，其保持设置在处理构件的相对的相对表面上的晶片。

38. 发明授权

US5447890A Method for production of wafer 失效
标题翻译：晶圆生产方法
公开(公告)号：US5447890A
公开(公告)日：1995-09-05
申请号：US210437
申请日：1994-03-21
申请人： Tadahiro Kato , Sunao Shima , Masami Nakano , Hisashi Masumura , Hideo Kudo
发明人： Tadahiro Kato , Sunao Shima , Masami Nakano , Hisashi Masumura , Hideo Kudo
IPC分类号： H01L21/02 , H01L21/302 , H01L21/304
CPC分类号： H01L21/02008 , Y10S148/138 , Y10S438/974
摘要： A wafer which allows manufacture of a device to proceed at an exalted yield by preventing the resolution of exposure at the step of photolithography during the manufacture of the device from being impaired is obtained by a method which comprises a slicing step for slicing a single crystal ingot thereby obtaining wafers of the shape of a thin disc, a chamfering step for chamfering the wafer obtained by the slicing step, a lapping step for imparting a flat surface to the chamfered wafer, an etching step for removing mechanical strain remaining in the lapped wafer, an obverse surface-polishing step for polishing one side of the etched wafer, and a cleaning step for cleaning the polished wafer, which method is characterized by interposing between the etching step and the obverse surface-polishing step a reverse surface-preparing step for preparing the shape of the reverse side of the wafer.
摘要翻译：通过包括用于切割单晶锭的切片步骤的方法，获得了通过防止在制造器件的光刻期间在光刻步骤中的曝光的分辨率而以制造器件以高产量进行制造的晶片从而获得薄盘形状的晶片，用于对通过切片步骤获得的晶片进行倒角的倒角步骤，用于向倒角晶片赋予平坦表面的研磨步骤，用于去除在重叠晶片中残留的机械应变的蚀刻步骤，用于抛光被蚀刻的晶片的一侧的正面抛光步骤和用于清洁抛光的晶片的清洁步骤，该方法的特征在于介于蚀刻步骤和正面抛光步骤之间，用于制备晶片背面的形状。

39. 发明授权

US5126027A Thin film forming method and system 失效
标题翻译：薄膜成型方法及系统
公开(公告)号：US5126027A
公开(公告)日：1992-06-30
申请号：US596826
申请日：1990-10-12
申请人： Hideo Kudo , Shigeru Tani , Yasushi Tamaki , Genichi Ishida , Shoji Ishida , Seigo Toyofuku , Fumio Fukasawa
发明人： Hideo Kudo , Shigeru Tani , Yasushi Tamaki , Genichi Ishida , Shoji Ishida , Seigo Toyofuku , Fumio Fukasawa
IPC分类号： C23C14/50 , C23C14/54 , C23C14/56 , G11B5/85 , G11B5/851
CPC分类号： C23C14/505 , C23C14/541 , C23C14/56
摘要： A thin film forming method includes the steps of preheating a plurality of base plates placed at a first position, sequentially picking up the base plates one by one and positioning a picked-up base plate at a second position, heating the picked-up base plate at the second position so that a temperature of the picked-up base plate becomes approximately equal to a predetermined temperature, moving the picked-up base plate from the second position to a third position, and growing a thin film on a surface of the picked-up base plate at the third position.
摘要翻译：薄膜形成方法包括以下步骤：对放置在第一位置的多个基板进行预热，依次顺序地拾取基板并将拾取的基板定位在第二位置，将拾取的基板在所述第二位置，使得所拾取的基板的温度近似等于预定温度，将所拾取的基板从第二位置移动到第三位置，并且在拾取的表面上生长薄膜在第三位置的基板。

40. 发明授权

US5039558A Optical recording medium and method of manufacturing thereof 失效
标题翻译：光记录介质及其制造方法
公开(公告)号：US5039558A
公开(公告)日：1991-08-13
申请号：US476862
申请日：1990-02-08
申请人： Kunio Imai , Saburo Aso , Hideo Kudo , Masataka Uchidoi
发明人： Kunio Imai , Saburo Aso , Hideo Kudo , Masataka Uchidoi
IPC分类号： G11B7/258
CPC分类号： G11B7/26 , G11B7/258 , G11B7/2533 , G11B7/2542 , G11B7/2585 , Y10S428/913 , Y10S430/146 , Y10T428/2982 , Y10T428/31529
摘要： An optical disk and method of preparing it in which a macromolecular substrate has information bits mechanically formed on its surface and a reflective metallic reflective film is deposited thereover. The grain size of the metallic reflective film is kept to less than 50 nanometers by depositing at a rate of no more than 1.5 nanometers per second.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式