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31. 发明授权

US5387888A High frequency ceramic multi-layer substrate 失效
标题翻译：高频陶瓷多层基板
公开(公告)号：US5387888A
公开(公告)日：1995-02-07
申请号：US41183
申请日：1993-04-01
申请人： Kazuo Eda , Yutaka Taguchi , Katsuyuki Miyauchi
发明人： Kazuo Eda , Yutaka Taguchi , Katsuyuki Miyauchi
IPC分类号： H01L23/66 , H01P1/15
CPC分类号： H01L23/66 , H01L2223/665 , H01L2924/0002 , H01L2924/3011
摘要： A high frequency ceramic multi-layer substrate includes a stripline embedded between two dielectric layers having ground electrodes at the top surface and at the bottom surface thereof and an electric circuit formed on another dielectric layer applied to one of the ground electrodes. The stripline is connected to the electric circuit through via holes provided through the dielectric layers. The equivalent length from the stripline to the electric circuit is a fourth of the wavelength of an input high frequency signal, to result in a high frequency attenuation circuit. Another high frequency ceramic multi-layer substrate further includes another electrode provided via another dielectric layer of larger dielectric constant to form a capacitor with one of the ground electrodes, and another dielectric layer for forming an electric circuit thereon is applied to the electrode. The stripline is connected to the electric circuit through via holes provided through dielectric layers. The electric circuit may be an impedance matching circuit of the stripline or a direct current bias circuit. This multi-layer structure makes the high frequency substrate compact and improves high frequency characteristics.
摘要翻译：高频陶瓷多层基板包括嵌入在其顶表面和底表面处具有接地电极的两个电介质层之间的带状线，以及形成在施加到一个接地电极的另一电介质层上的电路。带状线通过通过介电层提供的通孔连接到电路。从带状线到电路的等效长度是输入高频信号的波长的四分之一，以产生高频衰减电路。另一高频陶瓷多层基片还包括另一电极，该电极通过介电常数较大的介电层提供，以形成与其中一个接地电极的电容器，并在其上形成用于形成电路的另一电介质层。带状线通过通过电介质层提供的通孔连接到电路。电路可以是带状线或直流偏置电路的阻抗匹配电路。该多层结构使高频基板紧凑化并提高了高频特性。

32. 发明授权

US5075645A Matching circuit for high frequency transistor 失效
标题翻译：高频晶体管匹配电路
公开(公告)号：US5075645A
公开(公告)日：1991-12-24
申请号：US564761
申请日：1990-08-03
申请人： Kazuo Eda , Tetsuji Miwa , Yutaka Taguchi
发明人： Kazuo Eda , Tetsuji Miwa , Yutaka Taguchi
IPC分类号： H01P5/02
CPC分类号： H01P5/028
摘要： In a matching circuit for a high-frequency transistor, using a microstrip line for the main line and having a high-frequency transistor side main line shaped in a taper form, a thin-film capacitor and a grounding circuit are disposed between the taper part and the ground. The length of the parts of the thin-film capacitor is different in the signal traveling directions or the shape of the grounding circuit is different so that the impedance is matched at the output position of the thin-film capacitor part, while the spatial phase difference of high-frequency signals can be compensated at the same time.

33. 发明授权

US06284640B1 Manufacturing method for semiconductor device, mounting method of semiconductor device, semiconductor device, and inspecting method of semiconductor device 失效
标题翻译：半导体装置的制造方法，半导体装置的安装方法，半导体装置以及半导体装置的检查方法
公开(公告)号：US06284640B1
公开(公告)日：2001-09-04
申请号：US09427807
申请日：1999-10-27
申请人： Masahiro Ono , Tsukasa Shiraishi , Yoshihiro Bessho , Kazuo Eda
发明人： Masahiro Ono , Tsukasa Shiraishi , Yoshihiro Bessho , Kazuo Eda
IPC分类号： H01L2144
CPC分类号： H01L24/85 , H01L24/11 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05572 , H01L2224/1134 , H01L2224/13099 , H01L2224/16 , H01L2224/451 , H01L2224/48091 , H01L2224/48465 , H01L2224/78301 , H01L2224/81191 , H01L2224/85181 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A manufacturing method for a semiconductor device using a wire bonding method using a metal wire. In the wire bonding method, an impact load applied when a metal ball formed at the tip of the metal wire by electric discharge is brought into contact with a terminal electrode of a semiconductor device is smaller than a static load applied after the metal ball is brought into contact with the terminal electrode. The method makes it possible to prevent an element or wiring from being damaged while securing the pressure necessary for bonding the metal ball to the terminal electrode even when the terminal electrode is placed on the element or the wiring.
摘要翻译：一种使用金属线的引线接合方法的半导体器件的制造方法。在引线接合方法中，当通过放电在金属线的前端形成的金属球与半导体器件的端子电极接触时施加的冲击载荷小于在金属球被带入之后施加的静态载荷与端子电极接触。该方法使得即使当将端子电极放置在元件或布线上时，也可以确保将金属球接合到端子电极所需的压力，从而防止元件或布线损坏。

34. 发明授权

US5925973A Electronic component and method for producing the same 失效
标题翻译：电子元件及其制造方法
公开(公告)号：US5925973A
公开(公告)日：1999-07-20
申请号：US787362
申请日：1997-01-22
申请人： Kazuo Eda , Yoshihiro Tomita , Akihiro Kanaboshi , Masato Sugimoto
发明人： Kazuo Eda , Yoshihiro Tomita , Akihiro Kanaboshi , Masato Sugimoto
IPC分类号： C04B37/00 , H01L21/02 , H01L27/12 , H01L41/04 , H01L41/18 , H03H3/02 , H03H3/08 , H03H9/10 , H03H9/17 , H03H9/25 , H01L41/08
CPC分类号： H03H9/0595 , H01L41/053 , H01L41/312 , H03H3/02 , H03H3/08 , H03H9/1035 , Y10T29/42
摘要： An electronic component of the present invention includes a first substrate, a second substrate, a first conductive layer constituting a terminal electrode on a first surface of the first substrate, and a first insulating layer formed on the first conductive layer, wherein the first insulating layer and the second substrate are directly bonded to each other by at least one bond selected from the group consisting of a hydrogen bond and a covalent bond.
摘要翻译：本发明的电子元件包括第一基板，第二基板，构成第一基板的第一表面上的端子电极的第一导电层和形成在第一导电层上的第一绝缘层，其中第一绝缘层并且第二底物通过选自氢键和共价键的至少一个键直接键合。

35. 发明授权

US5037769A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5037769A
公开(公告)日：1991-08-06
申请号：US330956
申请日：1989-03-28
申请人： Masanori Inada , Kazuo Eda , Yorito Ota
发明人： Masanori Inada , Kazuo Eda , Yorito Ota
IPC分类号： H01L29/36 , H01L29/737
CPC分类号： H01L29/36 , H01L29/7371 , Y10S148/01 , Y10S148/072
摘要： A semiconductor device of a multilayer structure comprising semiconductor materials of different properties manufactured by using at least a step of epitaxially forming a semiconductor material layer on a substrate and a passivation film layer thereover, a step of introducing impurities into specific portions of the epitaxially formed semiconductor material layer and a step of removing the passivation film layer formed directly above the epitaxially formed semiconductor material layer within an epitaxial device and then applying epitaxial growing. Impurities introduced additionally to specific portions of the layer inside are substantially eliminated at the boundary adjacent the layer above the region introduced with impurities and the properties of the thus-produced semiconductors vary abruptly at the boundary between the layer in which the impurities are introduced and the layer thereabove. The material used for the passivation film layer comprises one that can be epitaxially formed and easily removed at a temperature and in a atmosphere under which the epitaxially formed layer below the passivation film are not decomposed or evaporized.
摘要翻译：一种多层结构的半导体器件，包括通过至少在衬底上外延形成半导体材料层的步骤和其上的钝化膜层而制造的具有不同性质的半导体材料，将杂质引入外延形成的半导体的特定部分材料层和去除在外延装置内的外延形成的半导体材料层正上方形成的钝化膜层，然后施加外延生长的步骤。在与内部区域相邻的边界处附近引入的层的特定部分的杂质基本上消除，并且由此产生的半导体的性质在其中引入杂质的层与其之间的边界处突然变化层以上。用于钝化膜层的材料包括可以在外部形成的并且在钝化膜下面的外延形成层不分解或蒸发的温度和气氛中容易除去的材料。

36. 发明授权

US5007066A Semiconductor laser apparatus 失效
标题翻译：半导体激光装置
公开(公告)号：US5007066A
公开(公告)日：1991-04-09
申请号：US464001
申请日：1990-01-12
申请人： Kazuo Eda
发明人： Kazuo Eda
IPC分类号： H01S3/10 , H01S5/00 , H01S5/14
CPC分类号： H01S3/10076 , H01S5/14 , H01S5/145
摘要： A semiconductor laser apparatus includes a semiconductor laser for emitting a light beam. The semiconductor laser has, as an external cavity, a quadruple light wave mixing optical phase conjugate element for inverting a spatial phase of an incident light beam. The apparatus further includes a pair of pump light sources which are arranged such that a superimposed portion of spectra of wavelengths of three light beams including two pump light beams emitted from the pair of pump light sources and entering into the optical phase conjugate element and another light beam emitted from the semiconductor laser is narrower than the spectral width of wavelengths of each of the three light beams. This enables the laser apparatus to generate an oscillating output wavelength of extremely narrow spectral width.
摘要翻译：半导体激光装置包括用于发射光束的半导体激光器。半导体激光器具有用于反射入射光束的空间相位的四重光波混合光学相位共轭元件作为外部空腔。该装置还包括一对泵浦光源，其被布置成使得包括从该对泵浦光源发射并进入光学相位共轭元件的两个泵浦光束的三个光束的波长的光谱的重叠部分和另一个光从半导体激光器发射的光束比三个光束中的每个光束的波长的光谱宽度窄。这使得激光装置能够产生非常窄的光谱宽度的振荡输出波长。

37. 发明授权

US4169071A Voltage-dependent resistor and method of making the same 失效
标题翻译：电压相关电阻及其制作方法
公开(公告)号：US4169071A
公开(公告)日：1979-09-25
申请号：US852048
申请日：1977-11-16
申请人： Kazuo Eda , Makino Osamu , Inada Masanori , Iga Atsushi , Sakai Masayuki , Matsuoka Michio
发明人： Kazuo Eda , Makino Osamu , Inada Masanori , Iga Atsushi , Sakai Masayuki , Matsuoka Michio
IPC分类号： C04B35/453 , H01C7/10 , H01B1/08
CPC分类号： H01C7/10
摘要： A voltage-dependent resistor comprising a sintered body comprising ZnO as a major part and additives wherein at least 10 weight percent of the ZnO is composed of ZnO grains having a grain size in the range from 100 to 500 microns; and method of making the same wherein the starting mixture comprises ZnO grains having a grain size in the range from 20 to 200 microns. This voltage-dependent resistor has both a low C-value and a high surge energy withstanding capability. It also has a low leakage current at a high temperature due to the addition of an antimony component as a spinel type polycrystalline Zn.sub.7/3 Sb.sub.2/3 O.sub.4.
摘要翻译：一种电压依赖电阻器，其包含以ZnO为主要部分的烧结体，其中至少10重量％的ZnO由具有100-500微米的晶粒尺寸的ZnO晶粒构成; 及其制备方法，其中起始混合物包含粒度在20至200微米范围内的ZnO颗粒。该电压相关电阻具有低C值和高浪涌能量承受能力。由于添加作为尖晶石型多晶Zn7 / 3Sb2 / 3O4的锑成分，因此在高温下也具有低的漏电流。

38. 发明授权

US06569512B2 Mounting structure for an electronic component and method for producing the same 失效
公开(公告)号：US06569512B2
公开(公告)日：2003-05-27
申请号：US09965768
申请日：2001-09-27
申请人： Hiroaki Takezawa , Tsutomu Mitani , Minehiro Itagaki , Yoshihiro Bessho , Kazuo Eda
发明人： Hiroaki Takezawa , Tsutomu Mitani , Minehiro Itagaki , Yoshihiro Bessho , Kazuo Eda
IPC分类号： B32B1508
CPC分类号： H05K3/321 , B32B7/02 , B32B7/12 , H05K2201/09909 , H05K2201/10636 , H05K2201/10984 , H05K2203/0783 , H05K2203/121 , Y02P70/611 , Y10S428/901 , Y10T29/4913 , Y10T29/49147 , Y10T428/24066 , Y10T428/24917 , Y10T428/2495 , Y10T428/24975 , Y10T428/269 , Y10T428/31678 , Y10T428/31681
摘要： In a mounting structure including a first electrode and a second electrode electrically connected to each other via a conductive adhesive, the periphery of an adhesion portion between at least one of the electrodes and the conductive adhesive is covered with an electrical insulating layer, whereby the adhesion portion is reinforced from the periphery. The electrical insulating layer may be formed by dissolving a binder resin component of the conductive adhesive in a solvent. This increases the concentration of a conductive filler in the conductive adhesive, so that the conductivity of the adhesion portion is also enhanced.

39. 发明授权

US6120917A Hybrid magnetic substrate and method for producing the same 失效
标题翻译：混合磁性基板及其制造方法
公开(公告)号：US6120917A
公开(公告)日：2000-09-19
申请号：US909353
申请日：1997-08-11
申请人： Kazuo Eda
发明人： Kazuo Eda
IPC分类号： G02B6/42 , G02F1/09 , G02F1/095 , H01F10/24 , H01F10/26 , H01F10/28 , H01F10/30 , H01F41/14 , H01L21/20 , H03H2/00
CPC分类号： H01F41/14 , G02B6/42 , G02B6/4208 , G02F1/0955 , H01F10/245 , H01F10/26 , H01F10/28 , H01F10/30 , H01L21/2007 , H03H2/001 , G02F1/093 , Y10T156/10
摘要： According to the present invention, a hybrid magnetic substrate is provided, which includes: a magnetic substrate; and a holding substrate directly bonded to the magnetic substrate through at least one of a hydrogen bond and a covalent bond. Furthermore, a method for producing a hybrid magnetic substrate having the magnetic substrate and the holding substrate is provided, which includes the steps of: cleaning a surface of the magnetic substrate to be bonded and a surface of the holding substrate to be bonded; allowing the cleaned surfaces to be subjected to a hydrophilic treatment; and attaching the surfaces, which are subjected to the hydrophilic treatment, to each other to directly bond the magnetic substrate to the holding substrate.
摘要翻译：根据本发明，提供一种混合磁性基板，其包括：磁性基板; 以及通过氢键和共价键中的至少一个直接键合到磁性基板上的保持基板。此外，提供一种具有磁性基板和保持基板的混合磁性基板的制造方法，其特征在于，包括以下步骤：清洗待接合的磁性基板的表面和待粘合的保持基板的表面; 使清洁的表面经受亲水处理; 并且将经过亲水处理的表面彼此附接以将磁性基板直接接合到保持基板。

40. 发明授权

US5982010A Piezoelectric device and method of manufacturing the same 失效
标题翻译：压电元件及其制造方法
公开(公告)号：US5982010A
公开(公告)日：1999-11-09
申请号：US976452
申请日：1997-11-25
申请人： Akihiko Namba , Tetsuyoshi Ogura , Yoshihiro Tomita , Kazuo Eda
发明人： Akihiko Namba , Tetsuyoshi Ogura , Yoshihiro Tomita , Kazuo Eda
IPC分类号： H01L41/22 , H01L41/312 , H01L41/338 , H03H3/02 , H01L29/84
CPC分类号： H03H3/02 , H01L41/312 , H01L41/338
摘要： A piezoelectric device is manufactured by: (1) mirror finishing surfaces of a first substrate and a second substrate made of a piezoelectric element; (2) forming grooves on at least one of the two surfaces of the first and second substrates; (3) joining the mirror-finished surfaces of the first substrate and the second substrate; (4) applying heat to the joined substrates and bonding them; (5) forming an opening on the first substrate so that a part of the exposed areas of the second substrate is exposed through the opening; (6) forming piezoelectric devices by forming electrodes on at least one of the second substrate through the opening and a corresponding area to the exposed area on the rear side of the second substrate; and (7) dividing the bonded substrates into portions each having one of the piezoelectric devices. Through this manufacturing method, piezoelectric devices with high yield ratios and high reliability can be obtained.
摘要翻译：压电器件通过以下制造：（1）第一衬底和由压电元件制成的第二衬底的镜面精加工表面; （2）在第一和第二基板的两个表面中的至少一个上形成凹槽; （3）连接第一基板和第二基板的镜面抛光面; （4）向接合的基片施加热量并将其粘合; （5）在所述第一基板上形成开口，使得所述第二基板的所述暴露区域的一部分通过所述开口露出; （6）通过在所述第二基板中的至少一个上通过所述开口形成电极并形成与所述第二基板的后侧上的暴露区域相对应的区域来形成压电装置; 和（7）将接合的衬底分成各自具有一个压电器件的部分。通过该制造方法，可以获得高屈服比和高可靠性的压电装置。

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