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31. 发明授权

US07274543B2 Over-voltage protection circuit 有权
标题翻译：过电压保护电路
公开(公告)号：US07274543B2
公开(公告)日：2007-09-25
申请号：US10401751
申请日：2003-03-31
申请人： Mutsuo Nishikawa , Katsumichi Ueyanagi , Katsuyuki Uematsu , Akio Kitamura
发明人： Mutsuo Nishikawa , Katsumichi Ueyanagi , Katsuyuki Uematsu , Akio Kitamura
IPC分类号： H02H9/00
CPC分类号： H01L27/0266 , H01L2924/0002 , H02H3/20 , H01L2924/00
摘要： An over-voltage protection circuit for protecting an integrated circuit includes an external power supply terminal to which a power supply voltage is supplied, a grounding terminal to which a ground voltage is supplied, and an internal power supply terminal for supplying the power supply voltage to the integrated circuit. A voltage dividing unit is connected between the external power supply terminal and the grounding terminal for dividing a voltage supplied from the external power supply terminal, and has a Zener diode and a first resistor connected in series. A signal generating unit is connected between the external power supply terminal and the grounding terminal for outputting the power supply voltage or the ground voltage, and a switching unit is connected between the internal power supply terminal and the signal generating unit for performing a switching operation.
摘要翻译：用于保护集成电路的过电压保护电路包括供给电源电压的外部电源端子，提供接地电压的接地端子和用于将电源电压提供给集成电路。分压单元连接在外部电源端子和用于分压从外部电源端子提供的电压的接地端子之间，并具有串联连接的齐纳二极管和第一电阻器。信号发生单元连接在外部电源端子和接地端子之间，用于输出电源电压或接地电压，并且在内部电源端子和信号产生单元之间连接有用于进行开关操作的开关单元。

32. 发明授权

US06346735B1 Semiconductor sensor structure and method of manufacturing the same 失效
标题翻译：半导体传感器结构及其制造方法
公开(公告)号：US06346735B1
公开(公告)日：2002-02-12
申请号：US09649055
申请日：2000-08-29
申请人： Katsumichi Ueyanagi , Mitsuo Sasaki
发明人： Katsumichi Ueyanagi , Mitsuo Sasaki
IPC分类号： H01L2982
CPC分类号： B81B3/001
摘要： A semiconductor device includes a deformable sensor structure spaced apart from a substrate, and convexities are formed on the lower surface of the sensor structure with tips of the convexities pointing to the substrate. The convexities of the deformable sensor structure facilitate reducing the contact area between the sensor structure and the substrate and attractive force caused by surface tension of an etchant or washing liquid. Thus, the structure prevents the sticking phenomena, improves the throughput and reduces the manufacturing costs.
摘要翻译：半导体器件包括与衬底间隔开的可变形传感器结构，并且凸起形成在传感器结构的下表面上，凸起的尖端指向衬底。可变形传感器结构的凸起有助于减小传感器结构和基板之间的接触面积以及由蚀刻剂或洗涤液体的表面张力引起的吸引力。因此，该结构防止粘附现象，提高生产量并降低制造成本。

33. 发明授权

US5608153A Semiconductor acceleration sensor and testing method thereof 失效
标题翻译：半导体加速度传感器及其测试方法
公开(公告)号：US5608153A
公开(公告)日：1997-03-04
申请号：US456279
申请日：1995-05-31
申请人： Katsumichi Ueyanagi
发明人： Katsumichi Ueyanagi
IPC分类号： G01P15/08 , G01P15/12 , G01P21/00
CPC分类号： G01P21/00 , G01P15/0802 , G01P15/124 , G01P2015/0828
摘要： A semiconductor acceleration sensor includes a silicon detecting member integrally processed from a silicon substrate, having a weight, a supporting portion, and a beam for coupling the weight with the supporting portion, at least one semiconductor strain gauge being formed on an upper surface of the beam; an upper glass provided on an upper portion of the silicon detecting member, and having a concave by which the weight is displaceable; and a lower glass provided on a lower portion of the silicon detecting member, and having a concave by which the weight is displaceable. The supporting portion of the silicon detecting member is electrostatically jointed with the upper glass and the lower glass, respectively; and conductive film is formed on the concave of the lower glass; and an opening portion through which a wiring pattern is externally derived from the conductive film is formed in the lower glass.
摘要翻译：半导体加速度传感器包括从具有重量的硅衬底整体加工的硅检测构件，支撑部分和用于将重物与支撑部分联接的梁，至少一个半导体应变计形成在光束; 设置在所述硅检测部件的上部的上部玻璃，并且具有凹部，所述重物可移动通过所述凹部; 以及设置在硅检测构件的下部上的下玻璃，并且具有凹部，重量可移动。硅检测部件的支撑部分分别与上玻璃和下玻璃静电接合; 并且在下玻璃的凹部上形成导电膜; 并且在下玻璃中形成有从导电膜外部导出布线图案的开口部。

34. 发明授权

US5526687A Semiconductor acceleration sensor and testing method thereof 失效
标题翻译：半导体加速度传感器及其测试方法
公开(公告)号：US5526687A
公开(公告)日：1996-06-18
申请号：US252557
申请日：1994-06-01
申请人： Katsumichi Ueyanagi
发明人： Katsumichi Ueyanagi
IPC分类号： G01P15/08 , G01P15/12 , G01P21/00
CPC分类号： G01P21/00 , G01P15/0802 , G01P15/124 , G01P2015/0828
摘要： A semiconductor acceleration sensor includes a silicon detecting member integrally processed from a silicon substrate, having a weight, a supporting portion, and a beam for coupling the weight with the supporting portion, at least one semiconductor strain gauge being formed on an upper surface of the beam; an upper glass provided on an upper portion of the silicon detecting member, and having a concave by which the weight is displaceable; and a lower glass provided on a lower portion of the silicon detecting member, and having a concave by which the weight is displaceable. The supporting portion of the silicon detecting member is electrostatically jointed with the upper glass and the lower glass, respectively; and conductive film is formed on the concave of the lower glass; and an opening portion through which a wiring pattern is externally derived from the conductive film is formed in the lower glass.
摘要翻译：半导体加速度传感器包括从具有重量的硅衬底整体加工的硅检测构件，支撑部分和用于将重物与支撑部分联接的梁，至少一个半导体应变计形成在光束; 设置在所述硅检测部件的上部的上部玻璃，并且具有凹部，所述重物可移动通过所述凹部; 以及设置在硅检测构件的下部上的下玻璃，并且具有凹部，重量可移动。硅检测部件的支撑部分分别与上玻璃和下玻璃静电接合; 并且在下玻璃的凹部上形成导电膜; 并且在下玻璃中形成有从导电膜外部导出布线图案的开口部。

35. 发明授权

US08030749B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08030749B2
公开(公告)日：2011-10-04
申请号：US12292480
申请日：2008-11-20
申请人： Shin Soyano , Katsumichi Ueyanagi
发明人： Shin Soyano , Katsumichi Ueyanagi
IPC分类号： H01L23/48
CPC分类号： H01L25/072 , H01L24/37 , H01L24/40 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40137 , H01L2224/40139 , H01L2224/40225 , H01L2224/48091 , H01L2224/73221 , H01L2224/84205 , H01L2224/84214 , H01L2224/84801 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device includes a resin case, a plurality of external connection terminals fixedly provided on the resin case, and at least one semiconductor element provided in the resin case. At least one terminal block has at least one wiring terminal for electrically connecting the semiconductor element and the external connection terminals.
摘要翻译：半导体器件包括树脂壳体，固定地设置在树脂壳体上的多个外部连接端子和设置在树脂壳体中的至少一个半导体元件。至少一个端子块具有用于电连接半导体元件和外部连接端子的至少一个接线端子。

36. 发明授权

US07705443B2 Semiconductor device with lead frame including conductor plates arranged three-dimensionally 有权
标题翻译：具有引线框架的半导体器件包括三维布置的导体板
公开(公告)号：US07705443B2
公开(公告)日：2010-04-27
申请号：US11872867
申请日：2007-10-16
申请人： Toshiyuki Yokomae , Katsumichi Ueyanagi , Eiji Mochizuki , Yoshinari Ikeda
发明人： Toshiyuki Yokomae , Katsumichi Ueyanagi , Eiji Mochizuki , Yoshinari Ikeda
IPC分类号： H01L23/48 , H01L23/52 , H01L23/495 , H01L29/40
CPC分类号： H01L25/072 , H01L23/3735 , H01L23/49811 , H01L24/29 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/84 , H01L25/162 , H01L25/18 , H01L25/50 , H01L2224/05553 , H01L2224/37011 , H01L2224/371 , H01L2224/37111 , H01L2224/37144 , H01L2224/37147 , H01L2224/3754 , H01L2224/40137 , H01L2224/45124 , H01L2224/48091 , H01L2224/48175 , H01L2224/48227 , H01L2224/48247 , H01L2224/49111 , H01L2224/49175 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83224 , H01L2224/83801 , H01L2224/84801 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/0106 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An electrical connection inside a semiconductor device is established by lead frames formed of plural conductor plates. The lead frames are disposed three-dimensionally so that the respective weld parts thereof are exposed toward a laser light source used in the laser welding. The laser welding is then performed by irradiating a laser beam. According to the above, welding can be performed readily in a reliable manner. The productivity of the semiconductor device and the manufacturing method of the semiconductor device can be thus enhanced. In addition, because the lead frames have the cooling effect, they have the capability of a heat spreader. It is thus possible to provide a semiconductor device and a manufacturing method of the semiconductor device with high productivity.
摘要翻译：通过由多个导体板形成的引线框架建立半导体器件内部的电连接。引线框架三维地设置，使得其各个焊接部分朝向激光焊接中使用的激光源曝光。然后通过照射激光束来进行激光焊接。根据上述，可以容易地以可靠的方式进行焊接。因此可以提高半导体器件的生产率和半导体器件的制造方法。另外，由于引线框具有冷却效果，因此具有散热器的能力。因此，可以以高生产率提供半导体器件的半导体器件和制造方法。

37. 发明申请

US20080087994A1 Semiconductor apparatus 有权
标题翻译：半导体装置
公开(公告)号：US20080087994A1
公开(公告)日：2008-04-17
申请号：US11896153
申请日：2007-08-30
申请人： Toshiyuki Yokomae , Katsumichi Ueyanagi , Eiji Mochizuki , Yoshinari Ikeda
发明人： Toshiyuki Yokomae , Katsumichi Ueyanagi , Eiji Mochizuki , Yoshinari Ikeda
IPC分类号： H01L23/495
CPC分类号： H01L23/492 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/371 , H01L2224/37599 , H01L2224/40137 , H01L2224/45124 , H01L2224/48091 , H01L2224/49111 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/19107 , H01L2924/00015 , H01L2924/3512 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor apparatus equipped with at least one semiconductor element includes a metallic plate bonded to an upper surface of the semiconductor element and a conductor plate, bonded to the metallic plate and serving as an electric current path of the semiconductor apparatus. The conductor plate and the metallic plate are bonded to each other by laser welding at a part other than a part directly above the semiconductor element. As a result, heat damage caused by laser welding can be reduced.
摘要翻译：配备有至少一个半导体元件的半导体装置包括接合到半导体元件的上表面的金属板和接合到金属板并用作半导体装置的电流路径的导体板。导体板和金属板通过激光焊接在除半导体元件正上方的部分之外的部分彼此接合。结果，可以减少由激光焊接引起的热损伤。

38. 发明申请

US20060238186A1 Semiconductor device and temperature detection method using the same 审中-公开
标题翻译：半导体器件和温度检测方法使用相同
公开(公告)号：US20060238186A1
公开(公告)日：2006-10-26
申请号：US11342877
申请日：2006-01-31
申请人： Mutsuo Nishikawa , Katsumichi Ueyanagi
发明人： Mutsuo Nishikawa , Katsumichi Ueyanagi
IPC分类号： G01N27/00
CPC分类号： G01K7/01 , G01K2205/02 , H01L27/092 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor apparatus has a temperature detecting section for detecting temperature with a semiconductor device formed in a semiconductor substrate; a temperature detector output terminal formed on the substrate for outputting a detection signal; a current generating device connected to the output terminal for supplying a driving current to the temperature detecting section; and a voltage measuring device connected to the output terminal for measuring the voltage of the output terminal. The apparatus detects temperature based on the voltage measured by the voltage measuring device when the driving current is supplied from the current generating device to the temperature detecting section. The apparatus is small, accurate, and easily manufactured at relatively low cost.
摘要翻译：半导体装置具有温度检测部，用于利用半导体衬底中形成的半导体器件来检测温度; 温度检测器输出端子，形成在所述基板上，用于输出检测信号; 连接到输出端子的电流产生装置，用于向温度检测部分提供驱动电流; 以及连接到输出端子的电压测量装置，用于测量输出端子的电压。当从电流发生装置向温度检测部提供驱动电流时，该装置基于由电压测量装置测量的电压来检测温度。该设备小巧，准确，易于以相对较低的成本制造。

39. 发明授权

US06684371B2 Layout of semiconductor integrated circuit 有权
标题翻译：半导体集成电路布局
公开(公告)号：US06684371B2
公开(公告)日：2004-01-27
申请号：US10117340
申请日：2002-04-08
申请人： Katsuyuki Uematsu , Mutsuo Nishikawa , Katsumichi Ueyanagi
发明人： Katsuyuki Uematsu , Mutsuo Nishikawa , Katsumichi Ueyanagi
IPC分类号： G06F1750
CPC分类号： G06F17/5068 , H01L2224/05553
摘要： To improve the capability to withstand noises and surges in a semiconductor integrated circuit in which an RC filter for cutting electromagnetic wave noises is integrated with analog circuits and digital circuits, a positive electrode of a capacitor constituting the RC filter is disposed apart from circuit elements or connection lines constituting the circuits at such an interval as to prevent malfunction of the circuit elements resulting from a noise superimposed on the positive electrode, or dielectric breakdown of the capacitor constituting the RC filter and latch-up and dielectric breakdown of the circuit elements resulting from a surge applied to the positive electrode. The interval is larger than the minimum interval required by a layout rule or five times longer than the minimum.
摘要翻译：为了提高在用于切割电磁波噪声的RC滤波器与模拟电路和数字电路集成的半导体集成电路中抵抗噪声和浪涌的能力，构成RC滤波器的电容器的正电极与电路元件或构成电路的连接线以这样的间隔来防止由叠加在正电极上的噪声导致的电路元件的故障，或者构成RC滤波器的电容器的电介质击穿以及由此产生的电路元件的闭锁和电介质击穿施加到正电极的浪涌。间隔大于布局规则所需的最小间隔或比最小值长五倍的间隔。

40. 发明授权

US06494092B2 Semiconductor sensor chip and method for producing the chip, and semiconductor sensor and package for assembling the sensor 失效
标题翻译：半导体传感器芯片及其制造方法，以及用于组装传感器的半导体传感器和封装
公开(公告)号：US06494092B2
公开(公告)日：2002-12-17
申请号：US09957241
申请日：2001-09-21
申请人： Katsumichi Ueyanagi , Mutsuo Nishikawa , Mitsuo Sasaki
发明人： Katsumichi Ueyanagi , Mutsuo Nishikawa , Mitsuo Sasaki
IPC分类号： G01P102
CPC分类号： G01P1/023 , G01P15/0802 , G01P15/0888 , G01P15/11 , G01P15/123 , G01P21/00 , H01F10/126 , H01F10/265 , H05K1/18
摘要： The present invention is a semiconductor sensor having a semiconductor sensor chip for detecting a physical value applied in a direction perpendicular to the chip surface; and a package for incorporating the semiconductor sensor chip. The main surface for mounting the semiconductor sensor chip is formed at a predetermined angle with respect to the surface of a printed circuit board for mounting the package. The main surface is provided with a plurality of terminals along two opposite sides for connecting with input/output terminals of the semiconductor sensor chip. A bottom surface, perpendicular to the main surface, is provided with a plurality of pins formed along the two sides parallel to the main surface, so that the plurality of pins are inserted into mounting holes formed in the printed circuit board. The plurality of terminals and the plurality of pins are electrically connected, and input/output terminals of the semiconductor sensor chip mounted on the main surface are electrically connected with the plurality of terminals of the package.
摘要翻译：本发明是具有半导体传感器芯片的半导体传感器，用于检测在垂直于芯片表面的方向上施加的物理值; 以及用于并入半导体传感器芯片的封装。用于安装半导体传感器芯片的主表面相对于用于安装封装的印刷电路板的表面以预定角度形成。主表面沿着两个相对侧设置有多个端子，用于连接半导体传感器芯片的输入/输出端子。垂直于主表面的底面设置有沿着平行于主表面的两侧形成的多个销，使得多个销插入形成在印刷电路板中的安装孔中。多个端子和多个引脚电连接，并且安装在主表面上的半导体传感器芯片的输入/输出端子与封装的多个端子电连接。

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