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31. 发明授权

US08075359B2 Phosphorus-doped diamond film allowing significantly reduced electron emission voltage, method for producing the same, and electron source using the same 有权
标题翻译：磷掺杂金刚石膜允许显着降低的电子发射电压，其制造方法和使用其的电子源
公开(公告)号：US08075359B2
公开(公告)日：2011-12-13
申请号：US12066976
申请日：2006-08-28
申请人： Takatoshi Yamada , Shinichi Shikata
发明人： Takatoshi Yamada , Shinichi Shikata
IPC分类号： H01J9/04 , H01J9/12
CPC分类号： H01J9/025 , C23C16/274 , C23C16/278 , H01J1/304 , H01J2201/30457
摘要： A phosphorus-doped diamond film, which contains phosphorus at a concentration of 1015 cm−3 or more, has a resistivity of 107 Ωcm or less, and allows the voltage for initiation of electron emission to be 30V or less. A method for producing the phosphorus-doped diamond film by growing a diamond film on a diamond substrate by chemical vapor deposition method in an atmosphere containing methane and hydrogen gases and phosphorus with the use of tertiary butyl phosphorus as a source of addition of phosphorus. A diamond electron source having an electrode and a substrate which contains the phosphorous-doped diamond film and emitting electron beams from the phosphorous-doped diamond film when voltage is applied between the electrode and the substrate.
摘要翻译：含有浓度为1015cm -3以上的磷的磷掺杂金刚石膜的电阻率为107Ω·cm以上，允许电子发射的电压为30V以下。通过在含有甲烷和氢气和磷的气氛中，通过化学气相沉积法在金刚石基底上生长金刚石膜，使用叔丁基磷作为磷的添加来生产磷掺杂金刚石膜的方法。一种金刚石电子源，具有电极和衬底，该电极和衬底包含磷掺杂金刚石膜，并且当电压施加在电极和衬底之间时，从掺杂磷的金刚石膜发射电子束。

32. 发明申请

US20100117098A1 SCHOTTKY ELECTRODE FOR DIAMOND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：肖特基电极用于金刚石半导体器件及其制造方法
公开(公告)号：US20100117098A1
公开(公告)日：2010-05-13
申请号：US12597578
申请日：2008-04-14
申请人： Kazuhiro Ikeda , Hitoshi Umezawa , Shinichi Shikata
发明人： Kazuhiro Ikeda , Hitoshi Umezawa , Shinichi Shikata
IPC分类号： H01L29/47 , H01L29/12 , H01L21/04
CPC分类号： H01L29/47 , C22C5/04 , H01L21/0435 , H01L29/1602 , H01L29/6603 , H01L29/872
摘要： To provide a Schottky electrode in a diamond semiconductor, which has a good adhesion properties to diamonds, has a contacting surface which does not become peeled due to an irregularity in an external mechanical pressure, does not cause a reduction in yield in a diode forming process and does not cause deterioration in current-voltage characteristics, and a method of manufacturing the Schottky electrode.A Schottky electrode which includes: scattered island-form pattern Pt-group alloy thin films which are formed on a diamond surface formed on a substrate, in which the Pt-group alloy includes 50 to 99.9 mass % of Pt and 0.1 to 50 mass % of Ru and/or Ir, or which includes electrodes in a scattered island pattern, including: scattered island-form pattern metal thin films which are formed on a diamond surface formed on a substrate and include one selected from Pt and Pd; and metal thin films which include one selected from Ru, Ir and Rh and are provided on all of the metal thin films which include one selected from Pt and Pd, and a method of manufacturing the Schottky electrode.
摘要翻译：为了在金刚石半导体中提供肖特基电极，该金刚石半导体具有良好的金刚石粘合性，具有由于外部机械压力不均匀而不会剥离的接触表面，在二极管形成过程中不会导致产率降低并且不会导致电流 - 电压特性的劣化，以及制造肖特基电极的方法。一种肖特基电极，其包括：形成在形成于基板上的金刚石表面上的散射岛状图案Pt族合金薄膜，其中Pt族合金包含Pt为50〜99.9质量％，0.1〜50质量％包括：散射岛状图案金属薄膜，其形成在形成于基板上的金刚石表面上，并且包括选自Pt和Pd中的一种; 以及包括选自Ru，Ir和Rh中的一种并且设置在包括选自Pt和Pd中的一种的所有金属薄膜上的金属薄膜和制造肖特基电极的方法。

33. 发明申请

US20090140263A1 METHOD FOR DIAMOND SURFACE TREATMENT AND DEVICE USING DIAMOND THIN FILM 审中-公开
标题翻译：金刚石表面处理方法和使用金刚石薄膜的器件
公开(公告)号：US20090140263A1
公开(公告)日：2009-06-04
申请号：US12300040
申请日：2007-04-27
申请人： Hitoshi Umezawa , Shinichi Shikata , Kazuhiro Ikeda
发明人： Hitoshi Umezawa , Shinichi Shikata , Kazuhiro Ikeda
IPC分类号： H01L29/16 , H01L21/22
CPC分类号： H01L29/1602 , H01L21/268 , H01L29/47 , H01L29/66143 , H01L29/868 , H01L29/872
摘要： A method for surface treatment of diamond comprising exposing the surface of diamond to UV light containing wavelengths of 172 nm to 184.9 nm and 253.7 nm at an integrated exposure of 10 to 5,000 J/cm2 in an environment of an atmosphere having an oxygen concentration of 20 to 100% and an ozone concentration of 10 to 500,000 ppm to adsorb oxygen on the surface of diamond.
摘要翻译：一种用于金刚石表面处理的方法，其特征在于，在氧浓度为20的气氛中，将金刚石的表面暴露于波长为172nm至184.9nm和253.7nm的紫外光，在10至5,000J / cm 2的整体曝光下至100％，臭氧浓度为10〜500,000ppm，以吸附金刚石表面的氧。

34. 发明申请

US20080193366A1 Film of N Type (100) Oriented Single Crystal Diamond Semiconductor Doped with Phosphorous Atoms, and a Method of Producing the Same 审中-公开
标题翻译：掺有磷原子的N型（100）取向的单晶金刚石半导体膜及其制造方法
公开(公告)号：US20080193366A1
公开(公告)日：2008-08-14
申请号：US11883488
申请日：2006-01-26
申请人： Hiromitsu Kato , Satoshi Yamasaki , Hideyo Ookushi , Shinichi Shikata
发明人： Hiromitsu Kato , Satoshi Yamasaki , Hideyo Ookushi , Shinichi Shikata
IPC分类号： C01B31/06 , C30B23/00
CPC分类号： C30B25/105 , C30B25/02 , C30B25/18 , C30B25/20 , C30B29/04 , C30B29/40 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/30
摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorus atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorus compound in the plasma vapor phase, the ratio of phosphorus atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.
摘要翻译：提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基板（100）取向金刚石，用于化学气相沉积的装置在等离子体气相中提供氢，烃和磷化合物，等离子体气相中磷原子与碳原子的比例不小于0.1％，和碳原子数与氢原子的比率为0.05％以上，制造方法为。

35. 发明授权

US5624853A Method for forming heterojunction bipolar transistors 失效
标题翻译：异质结双极晶体管的形成方法
公开(公告)号：US5624853A
公开(公告)日：1997-04-29
申请号：US417781
申请日：1995-04-06
申请人： Shinichi Shikata
发明人： Shinichi Shikata
IPC分类号： H01L21/04 , H01L21/205 , H01L29/267 , H01L29/737 , H01L21/265
CPC分类号： H01L29/66037 , H01L21/02376 , H01L21/02378 , H01L21/02447 , H01L21/02529 , H01L21/0254 , H01L21/02543 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/267 , H01L29/66068 , H01L29/7371 , Y10S438/931 , Y10S438/932
摘要： A pnp transistor is formed having a heterojunction of p-type diamond (or BP.sub.x N.sub.1-x, 6HSiC) and n-type SiC (3CSiC). The transistor is formed such that a p.sup.+ -SiC (3CSiC) layer, a p-SiC (3CSiC) layer, an n.sup.+ -SiC (3CSiC) layer, a p-diamond (or BP.sub.x N.sub.1-x, 6HSiC) layer, and a p.sup.+ -diamond (or BP.sub.x N.sub.1-x, 6HSiC) layer are on a substrate, and a collector electrode, a base electrode. An emitter electrode is formed on and electrically connected to the p.sup.+ -Sic layer, the n.sup.+ -SiC layer, and the layer, respectively. This method produces a semiconductor device having a high resistance to various environmental conditions.
摘要翻译：形成具有p型金刚石（或BPxN1-x，6HSiC）和n型SiC（3CSiC）的异质结的pnp晶体管。晶体管形成为使得p + -SiC（3CSiC）层，p-SiC（3CSiC）层，n + -SiC（3CSiC）层，p金刚石（或BPxN1-x，6HSiC）层和p + （或BPxN1-x，6HSiC）层在基板上，集电极，基极。发射电极分别形成在p + -Sic层，n + -SiC层和层上并电连接。该方法产生对各种环境条件具有高抗性的半导体器件。

36. 发明申请

US20090308305A1 PROCESS FOR PRODUCING SINGLE-CRYSTAL SUBSTRATE WITH OFF ANGLE 审中-公开
标题翻译：用于生产具有角度的单晶衬底的工艺
公开(公告)号：US20090308305A1
公开(公告)日：2009-12-17
申请号：US12375175
申请日：2007-07-20
申请人： Yoshiaki Mokuno , Akiyoshi Chayahara , Hideaki Yamada , Shinichi Shikata
发明人： Yoshiaki Mokuno , Akiyoshi Chayahara , Hideaki Yamada , Shinichi Shikata
IPC分类号： C30B23/00
CPC分类号： C30B29/04 , C30B25/00 , C30B25/02 , C30B31/22 , C30B33/00 , H01L21/02376 , H01L21/02378 , H01L21/02381 , H01L21/02527 , H01L21/0262 , H01L21/02658 , H01L21/02664
摘要： The invention provides a process for producing a single-crystal substrate with an off-angle, which comprises using, as a substrate, a material capable of epitaxial growth by a vapor-phase synthesis method, whose surface has an off-angle with respect to a crystal plane capable of epitaxial growth; implanting ions into the substrate having a surface with an off-angle to form a layer with a deteriorated crystal structure near the surface of the substrate; growing a crystal on the surface with an off-angle of the substrate by a vapor-phase synthesis method; and separating a grown crystal layer from the substrate. In accordance with the process of the invention, when producing off-substrates usable in vapor-phase synthesis of single crystals, the manufacturing costs can be reduced, and substrates with an identical off-angle can be produced easily and in large quantities.
摘要翻译：本发明提供一种用于制造具有偏角的单晶衬底的方法，该方法包括使用通过气相合成方法能够外延生长的材料作为衬底，其表面相对于能够外延生长的晶体平面; 将离子注入具有偏离角的表面的衬底中以在衬底的表面附近形成具有劣化晶体结构的层; 通过气相合成法在衬底的偏角下在表面上生长晶体; 以及从衬底分离生长的晶体层。根据本发明的方法，当制造可用于单晶合成气相的脱模底板时，可以降低制造成本，并且可以容易且大量地制造具有相同偏角的基板。

37. 发明申请

US20090167139A1 PHOSPHORUS-DOPED DIAMOND FILM ALLOWING SIGNIFICANTLY REDUCED ELECTRON EMISSION VOLTAGE, METHOD FOR PRODUCING THE SAME, AND ELECTRON SOURCE USING THE SAME 有权
标题翻译：具有显着降低电子发射电压的磷光体金刚石膜，其制造方法和使用该电极的电子源
公开(公告)号：US20090167139A1
公开(公告)日：2009-07-02
申请号：US12066976
申请日：2006-08-28
申请人： Takatoshi Yamada , Shinichi Shikata
发明人： Takatoshi Yamada , Shinichi Shikata
IPC分类号： H01J19/02 , C30B23/02 , H01B1/00
CPC分类号： H01J9/025 , C23C16/274 , C23C16/278 , H01J1/304 , H01J2201/30457
摘要： According to the present invention, a phosphorus-doped diamond film allowing a significantly reduced electron emission voltage, a method for producing the same, and a diamond electron source using the same, such diamond electron source exerting stable and excellent electron emission characteristics, which can be used for a cold cathode surface structure operable with low voltage, are provided. Also, a method for producing a phosphorus-doped diamond film, comprising growing a diamond film on a diamond substrate by a microwave CVD method in an atmosphere containing gases (methane and hydrogen) and phosphorus with the use of tertiary butyl phosphorus as a source of addition of phosphorous, such diamond film containing phosphorus at a concentration of 1015 cm−3 or more, having a resistivity of 107 Ωcm or less, and allowing a voltage for initiation of electron emission to be 30 V or less, and a diamond electron source using the same are provided. In such diamond film, the electron emission voltage is significantly reduced.
摘要翻译：根据本发明，能够显着降低电子发射电压的磷掺杂金刚石薄膜，其制造方法和使用该方法的金刚石电子源，具有稳定和优异的电子发射特性的金刚石电子源，其可以用于可低压操作的冷阴极表面结构。另外，一种磷掺杂金刚石膜的制造方法，其特征在于，在含有气体（甲烷和氢）和磷的气氛中，通过微波CVD法在金刚石基板上生长金刚石膜，使用叔丁基磷作为加入磷，这种金刚石膜含有浓度为1015cm-3或更高的磷，具有107Ω·米或更小的电阻率，并允许电子发射的电压为30V或更小，金刚石电子源提供使用它们。在这种金刚石膜中，电子发射电压显着降低。

38. 发明申请

US20090050899A1 High-output diamond semiconductor element 审中-公开
标题翻译：高输出金刚石半导体元件
公开(公告)号：US20090050899A1
公开(公告)日：2009-02-26
申请号：US12153752
申请日：2008-05-23
申请人： Kazuhiro Ikeda , Hitoshi Umezawa , Shinichi Shikata , Ramanujam Kumaresan , Natsuo Tatsumi
发明人： Kazuhiro Ikeda , Hitoshi Umezawa , Shinichi Shikata , Ramanujam Kumaresan , Natsuo Tatsumi
IPC分类号： H01L29/15
CPC分类号： H01L29/872 , H01L23/291 , H01L23/3171 , H01L29/1602 , H01L29/402 , H01L2924/0002 , H01L2924/3025 , H01L2924/00
摘要： The present invention relates to a high-output diamond semiconductor element, including a Schottky electrode as a cathode, a diamond P− drift layer, a diamond p+ ohmic layer, an ohmic electrode as an anode, and an insulating film layer disposed to surround a circumference of the Schottky electrode. It also relates to a high-output diamond semiconductor element, including a Schottky electrode as a cathode, a diamond P− drift layer, a diamond p+ ohmic layer, an ohmic electrode as an anode, a dielectric layer disposed on a part of a junction surface of the Schottky electrode and the diamond p− drift layer, and a field plate containing a conductor, the field plate being disposed on an external surface of the dielectric layer to surround a circumference of the Schottky electrode.
摘要翻译：本发明涉及一种高输出金刚石半导体元件，其包括作为阴极的肖特基电极，金刚石P漂移层，金刚石p +欧姆层，作为阳极的欧姆电极和设置成围绕肖特基电极的周长。它还涉及一种高输出金刚石半导体元件，其包括作为阴极的肖特基电极，金刚石P-漂移层，金刚石p +欧姆层，作为阳极的欧姆电极，设置在结的一部分上的电介质层肖特基电极和金刚石p-漂移层的表面和包含导体的场板，场板设置在电介质层的外表面上以围绕肖特基电极的周围。

39. 发明授权

US5344526A Method for etching diamond 失效
标题翻译：蚀刻金刚石的方法
公开(公告)号：US5344526A
公开(公告)日：1994-09-06
申请号：US123061
申请日：1993-09-16
申请人： Yoshiki Nishibayashi , Shinichi Shikata
发明人： Yoshiki Nishibayashi , Shinichi Shikata
IPC分类号： C23F4/00 , B81C99/00 , C04B41/53 , C04B41/91 , H01L21/302 , H01L21/3065 , H01L21/306 , B44C1/22
CPC分类号： H01L21/3065 , B81C1/00531 , C04B41/5338 , C04B41/5346 , C04B41/91 , B81B2201/035 , B81C2201/0132
摘要： A diamond surface is selectively etched by forming a mask on a surface of diamond, and etching the diamond surface with a mixture of oxygen-containing gas and an inert gas, in which a concentration of oxygen in terms of O.sub.2 is from 0.01 to 20% based on the whole volume of the mixture.
摘要翻译：通过在金刚石的表面上形成掩模来选择性地蚀刻金刚石表面，并且用含氧气体和惰性气体的混合物蚀刻金刚石表面，其中以O 2计的氧浓度为0.01至20％基于混合物的总体积。

40. 发明授权

US4859618A Method of producing the gate electrode of a field effect transistor 失效
标题翻译：制作场效应晶体管的栅电极的方法
公开(公告)号：US4859618A
公开(公告)日：1989-08-22
申请号：US122438
申请日：1987-11-19
申请人： Shinichi Shikata , Hideki Hayashi
发明人： Shinichi Shikata , Hideki Hayashi
IPC分类号： H01L21/027 , H01L21/285 , H01L21/338
CPC分类号： H01L29/66871 , H01L21/0272 , H01L21/28587
摘要： A method of forming a self-aligned gate electrode of a field effect transistor, in which a resist pattern is formed on a substrate by lithography, an ion-implanted layer in the substrate at the side of the resist is formed by ion implantation, an insulating film is formed on the substrate by electron cyclotron resonance plasma chemical vapor deposition, the resist pattern and a part of the insulating film on the resist pattern removed by lift-off to thereby form an insulating pattern with an opening, the substrate annealed to activate said ion-implanted layer and a gate electrode formed in the opening by a spacer lift-off method.
摘要翻译：通过光刻法形成在基板上形成抗蚀剂图案的场效应晶体管的自对准栅电极的方法，通过离子注入形成在抗蚀剂一侧的基板中的离子注入层，通过电子回旋共振等离子体化学气相沉积在基板上形成绝缘膜，通过剥离去除抗蚀剂图案和抗蚀剂图案上的绝缘膜的一部分，从而形成具有开口的绝缘图案，基板退火以激活所述离子注入层和通过间隔物剥离法在开口中形成的栅电极。

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