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    • 32. 发明授权
    • Junction field effect transistor of vertical type
    • 垂直型结型场效应晶体管
    • US4067036A
    • 1978-01-03
    • US711641
    • 1976-08-04
    • Takashi YoshidaKatsuhiko Ishida
    • Takashi YoshidaKatsuhiko Ishida
    • H01L29/80H01L29/10H01L29/808H01L29/78
    • H01L29/1066H01L29/8083Y10S148/088
    • A junction field effect transistor of a vertical type having: a drain region having a first conductivity type; a gate region composed of branches formed on said drain region by a selective vapor deposition or liquidous phase deposition method and having a second conductivity type opposite to the first conductivity type of the drain region, at least that surface of each of the branches of the gate region which locates on the side opposite to the drain region side being covered with an insulating layer; and source regions formed between the respective branches of the gate region by conducting a further growth of said drain region. This field effect transistor has a sufficiently reduced area of P - N junction between the gate region and the respective source regions, resulting in a marked reduction in the junction capacitance. Besides, the insulated gate region with respect to the source regions give rise to a high gate-to-source breakdown voltage property.
    • 一种垂直型结型场效应晶体管,具有:具有第一导电类型的漏区; 栅极区域,其通过选择性气相沉积或液相沉积方法形成在所述漏极区上的分支,并且具有与漏区的第一导电类型相反的第二导电类型,至少栅极的每个分支的表面 位于与漏极区域侧相反的一侧的区域被绝缘层覆盖; 以及通过进一步增长所述漏极区域而形成在栅极区域的各个分支之间的源极区域。 该场效应晶体管在栅极区域和相应的源极区域之间具有足够减小的P-N结的面积,导致结电容显着降低。 此外,相对于源极区域的绝缘栅极区域产生高的栅极 - 源极击穿电压特性。