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31. 发明授权

US09021013B2 Ubiquitous web service gateway and method 有权
标题翻译：无处不在的Web服务网关和方法
公开(公告)号：US09021013B2
公开(公告)日：2015-04-28
申请号：US12670507
申请日：2008-07-31
申请人： Kangchan Lee , Seung Yun Lee
发明人： Kangchan Lee , Seung Yun Lee
IPC分类号： G06F15/16 , H04L29/12 , H04L29/08
CPC分类号： H04L29/12113 , H04L29/12169 , H04L61/1541 , H04L61/1576 , H04L67/02 , H04L67/16
摘要： There is provided a method for providing ubiquitous web services including receiving, at a ubiquitous web service gateway, a request for web service from a web service requester, and sending, at the ubiquitous web service gateway, the request for web service to a web service provider dynamically selected from among web service providers that provide the requested web service, depending on a change in interface information of the web service providers. The method further includes receiving, at the ubiquitous web service gateway, the result of requested web service from the web service provider that received the request for web service, and providing, at the ubiquitous web service gateway, the web service result to the web service requester.
摘要翻译：提供了一种用于提供无处不在的网络服务的方法，包括在无所不在的网络服务网关处从web服务请求者接收对Web服务的请求，以及在无处不在的web服务网关处将web服务的请求发送到web服务取决于Web服务提供商的接口信息的变化，动态地从提供所请求的web服务的Web服务提供者中动态地选择提供者。该方法还包括在无处不在的web服务网关处从接收到web服务请求的web服务提供商处接收所请求的web服务的结果，并在无处不在的web服务网关处将web服务结果提供给web服务请求者

32. 发明授权

US08445887B2 Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same 有权
标题翻译：使用相变存储器件的非易失性可编程开关器件及其制造方法
公开(公告)号：US08445887B2
公开(公告)日：2013-05-21
申请号：US12428628
申请日：2009-04-23
申请人： Sung Min Yoon , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
发明人： Sung Min Yoon , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
IPC分类号： H01L45/00
CPC分类号： H01L45/1226 , H01L45/06 , H01L45/1206 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.
摘要翻译：提供了一种使用相变存储器件的非易失性可编程开关器件及其制造方法。开关装置包括基板，设置在基板上的多个端子的第一金属电极层，设置在基板上并具有自加热沟道结构的相变材料层，相变材料层具有与第一金属电极层的端子和介于导入区域之间的沟道区域电接触的多个导入区域，设置在第一金属电极层和相变材料层上的绝缘层，设置在第一金属电极层和设置成填充通孔的第二金属电极层。开关装置利用相变材料的电阻加热来执行存储器操作，而不需要额外的加热器电极，从而最小化由于金属电极的热导率导致的热损失，从而降低开关器件的功耗。

33. 发明申请

US20130050556A1 IMAGE PHOTOGRAPHING DEVICE AND CONTROL METHOD THEREOF 有权
标题翻译：图像摄影装置及其控制方法
公开(公告)号：US20130050556A1
公开(公告)日：2013-02-28
申请号：US13596373
申请日：2012-08-28
申请人： Seung Yun Lee , Yi Lee Seo , Ji Young Yun , Isaac Lee
发明人： Seung Yun Lee , Yi Lee Seo , Ji Young Yun , Isaac Lee
IPC分类号： H04N5/222
CPC分类号： H04N5/23216 , H04N5/23222
摘要： Disclosed herein are an image photographing device that includes a display unit displaying a preview image and a control method thereof. The image photographing device includes a judgment unit that judges whether or not lens blind has occurred and a photographing control unit that executes photographing after a predetermined time following an input of a photographing execution command has elapsed, if the judgment unit judges that lens blind has occurred. Even if a user shields a lens by his/her hand during a process of touching the screen of the display unit or pressing a photographing button to execute photographing, photographing is executed after the user's hand has moved out of the visual field of the lens, and thus an image desired by the user may be obtained without disturbance due to lens blind.
摘要翻译：这里公开了一种图像拍摄装置，其包括显示预览图像的显示单元及其控制方法。图像拍摄装置包括判断单元，判断单元是否已经发生了镜头遮挡;以及拍摄控制单元，如果判断单元判断出镜头失真已经发生，则在经过了拍摄执行命令的输入之后的预定时间之后执行拍摄的拍摄控制单元。即使用户在触摸显示单元的屏幕或按压拍摄按钮执行拍摄的过程中用手遮住透镜，在用户的手已经移出透镜的视场之后执行拍摄，因此可以获得用户所期望的图像，而不会由于镜头遮挡而产生干扰。

34. 发明申请

US20130050430A1 IMAGE PHOTOGRAPHING DEVICE AND CONTROL METHOD THEREOF 审中-公开
标题翻译：图像摄影装置及其控制方法
公开(公告)号：US20130050430A1
公开(公告)日：2013-02-28
申请号：US13571664
申请日：2012-08-10
申请人： Seung Yun Lee
发明人： Seung Yun Lee
IPC分类号： H04N13/02
CPC分类号： H04N13/261 , H04N13/128 , H04N13/207 , H04N2013/0081
摘要： An image photographing device includes a photographing unit that receives an image, an image processing unit that generates preview image data using the image, a depth map generation unit that receives the preview image data transmitted from the image processing unit and that generates a depth map of a subject using the preview image data, and a display unit that displays both the preview image data and information regarding the depth map of the subject through a preview image. A control method of an image photographing device includes generating preview image data using an image input during a 3D photographing mode, generating a depth map of a subject using the preview image data, and displaying both the preview image data and information regarding the depth map of the subject through a preview image.
摘要翻译：图像拍摄装置包括接收图像的拍摄单元，使用该图像生成预览图像数据的图像处理单元，深度图生成单元，其接收从图像处理单元发送的预览图像数据，并生成深度图使用预览图像数据的被摄体，以及通过预览图像显示预览图像数据和关于被摄体的深度图的信息的显示单元。图像拍摄装置的控制方法包括使用在3D拍摄模式期间输入的图像生成预览图像数据，使用预览图像数据生成对象的深度图，并且显示预览图像数据和关于深度图的信息主题通过预览图像。

35. 发明申请

US20120300023A1 IMAGE PHOTOGRAPHING DEVICE AND CONTROL METHOD THEREOF 有权
标题翻译：图像摄影装置及其控制方法
公开(公告)号：US20120300023A1
公开(公告)日：2012-11-29
申请号：US13474943
申请日：2012-05-18
申请人： Seung Yun Lee
发明人： Seung Yun Lee
IPC分类号： H04N5/225
CPC分类号： H04N5/23293 , G06T3/4038 , H04N5/23216 , H04N5/23238
摘要： An image photographing device displays a preview panoramic image and data regarding moving velocity and direction of the image photographing device during panorama photographing in real time. The image photographing device includes a photographing unit to photograph a plurality of images, an image processing unit to convert the images photographed by the photographing unit into preview image data and to generate preview panorama data using the preview image data, and a display unit to simultaneously output a screen to display the preview image data, a screen to display a process of synthesizing the preview panorama data, a moving direction display screen indicating a relative difference between the moving direction of the image photographing device and a predetermined reference direction, and a moving velocity display screen indicating a relative difference between the moving velocity of the image photographing device and a predetermined reference velocity.
摘要翻译：图像拍摄装置实时地在全景拍摄期间显示预览全景图像和关于图像拍摄装置的移动速度和方向的数据。图像拍摄装置包括拍摄多个图像的拍摄单元，将由拍摄单元拍摄的图像转换成预览图像数据并使用预览图像数据生成预览全景图像的图像处理单元，以及同时显示单元输出屏幕以显示预览图像数据，显示合成预览全景数据的处理的屏幕，指示图像拍摄装置的移动方向与预定参考方向之间的相对差异的移动方向显示屏幕和移动速度显示屏幕，其指示图像拍摄装置的移动速度与预定参考速度之间的相对差。

36. 发明授权

US07977674B2 Phase change memory device and method of fabricating the same 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07977674B2
公开(公告)日：2011-07-12
申请号：US12240013
申请日：2008-09-29
申请人： Sung Min Yoon , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
发明人： Sung Min Yoon , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
IPC分类号： H01L29/08 , H01L29/18 , H01L29/02 , H01L47/00 , H01L21/06
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.
摘要翻译：提供了一种相变存储器件及其制造方法。相变存储器件的相变材料层由锗（Ge） - 锑（Sb） - 碲（Te）基Ge2Sb2 + xTe5（0.12＆nlE; x＆lt; lE; 0.32）形成，结晶状态被确定为稳定的单相，而不是相变材料的晶态和非晶态之间的相转变中的亚稳相和稳定相的混合相，并且根据升温的相变，从非晶形态到单稳态相转变州。结果，可以显着提高相变存储器件的设定状态电阻的设定操作稳定性和分布特性，并且可以在高温下（即，结晶温度附近）长时间保持非晶形电阻，并因此复位可以显着提高相变存储器件的操作稳定性和重写操作的稳定性。

37. 发明申请

US20100148141A1 NON-VOLATILE PROGRAMMABLE DEVICE INCLUDING PHASE CHANGE LAYER AND FABRICATING METHOD THEREOF 审中-公开
标题翻译：非易失性可编程器件，包括相变层及其制造方法
公开(公告)号：US20100148141A1
公开(公告)日：2010-06-17
申请号：US12491465
申请日：2009-06-25
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soonwon Jung , Sang Hoon Cheon , Byoung Gon Yu
IPC分类号： H01L47/00
CPC分类号： H01L45/148 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/144
摘要： Provided is a non-volatile programmable device including a first terminal, a first threshold switching layer connected to part of the first terminal, a phase change layer connected to the first threshold switching layer, a second threshold switching layer connected to the phase change layer, a second terminal connected to the second threshold switching layer, and third and fourth terminals respectively connected to a side portion of the phase change layer and the other side portion opposite to the side portion of the phase change layer.
摘要翻译：提供了一种非易失性可编程装置，包括第一端子，连接到第一端子的一部分的第一阈值开关层，连接到第一阈值开关层的相变层，连接到相变层的第二阈值开关层，连接到第二阈值开关层的第二端子，以及分别连接到相变层的侧部和与相变层的侧部相对的另一侧部的第三和第四端子。

38. 发明申请

US20080237564A1 Phase-Change Memory Device Using Sb-Se Metal Alloy and Method of Fabricating the Same 有权
标题翻译：使用Sb-Se金属合金的相变存储器件及其制造方法
公开(公告)号：US20080237564A1
公开(公告)日：2008-10-02
申请号：US12063991
申请日：2006-08-30
申请人： Sung Min Yoon , Nam Yeal Lee , Sang Ouk Ryu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Byoung Gon Yu
发明人： Sung Min Yoon , Nam Yeal Lee , Sang Ouk Ryu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Byoung Gon Yu
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.
摘要翻译：提供了使用具有低熔点和高结晶速度的相变材料的相变存储器件及其制造方法。相变存储器件包括与发热电极层接触的锑（Sb） - 硒（Se）硫属元素化物Sb>> 100-x>相变材料层通过孔暴露并填充孔。由于在相变材料层中使用Sb Se <100> x 比GST更高速度，低功耗的相变存储器件可以制造存储器件。

39. 发明授权

US07348632B2 NMOS device formed on SOI substrate and method of fabricating the same 有权
标题翻译：在SOI衬底上形成的NMOS器件及其制造方法
公开(公告)号：US07348632B2
公开(公告)日：2008-03-25
申请号：US11019179
申请日：2004-12-23
申请人： Jin Yeong Kang , Seung Yun Lee , Kyoung Ik Cho
发明人： Jin Yeong Kang , Seung Yun Lee , Kyoung Ik Cho
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L29/66242 , H01L21/84 , H01L27/1203
摘要： Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.
摘要翻译：提供了在SOI衬底上实现的NMOS器件，PMOS器件和SiGe HBT器件及其制造方法。在制造Si基高速器件时，SiGe HBT和CMOS安装在单个SOI衬底上。特别地，CMOS的源极和漏极由SiGe和金属形成，因此防止漏电流并实现低功耗。此外，芯片中的发热被抑制，即使在低电压下也可以获得宽的工作范围。

40. 发明授权

US06455871B1 SiGe MODFET with a metal-oxide film and method for fabricating the same 有权
标题翻译：具有金属氧化物膜的SiGe MODFET及其制造方法
公开(公告)号：US06455871B1
公开(公告)日：2002-09-24
申请号：US09927939
申请日：2001-08-13
申请人： Kyu Hwan Shim , Hong Seung Kim , Seung Yun Lee , Jin Yeoung Kang
发明人： Kyu Hwan Shim , Hong Seung Kim , Seung Yun Lee , Jin Yeoung Kang
IPC分类号： H01L2906
CPC分类号： H01L29/66431 , H01L29/665 , H01L29/66545 , H01L29/7782
摘要： There is disclosed a method for fabricating a SiGe MODFET device using a metal oxide film. The present invention provides a SiGe MODFET device with improved operation speed and reduced non-linear operation characteristic caused in a single channel structure devices, by increasing the mobility of the carriers in the SiGe MODEFT having a metal-oxide gate, and method of fabricating the same. In order to accomplish the above object, the present invention grows a silicon buffer layer and a SiGe buffer layer on a silicon substrate by low-temperature process, so that defects caused by the mismatch of the lattice constants being applied to the epitaxial layer from the silicon substrate are constrained in the buffer layered formed by the low-temperature process.
摘要翻译：公开了使用金属氧化物膜制造SiGe MODFET器件的方法。本发明通过增加具有金属氧化物栅的SiGe MODEFT中的载流子的迁移率，提供了在单通道结构器件中引起的具有改进的操作速度和降低的非线性操作特性的SiGe MODFET器件，以及制造相同。为了实现上述目的，本发明通过低温处理在硅衬底上生长硅缓冲层和SiGe缓冲层，使得由晶格常数不匹配引起的缺陷从外延层施加到外延层硅衬底被限制在由低温工艺形成的缓冲层中。

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