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31. 发明授权

US4527428A Semiconductor pressure transducer 失效
标题翻译：半导体压力传感器
公开(公告)号：US4527428A
公开(公告)日：1985-07-09
申请号：US442665
申请日：1982-12-30
申请人： Satoshi Shimada , Kazuji Yamada , Seikou Suzuki , Shigeyuki Kobori , Motohisa Nishihara
发明人： Satoshi Shimada , Kazuji Yamada , Seikou Suzuki , Shigeyuki Kobori , Motohisa Nishihara
IPC分类号： G01L9/00 , G01L13/02 , G01L9/06
CPC分类号： G01L19/147 , G01L13/025 , G01L19/0038 , G01L19/0645 , G01L9/0054
摘要： A semiconductor pressure transducer including a measuring diaphragm of semiconductor material for sensing pressure supported by a support member of the same material. An oxide layer and a thin glass layer are interposed between the measuring diaphragm and the support member.
摘要翻译：一种半导体压力传感器，包括用于感测由相同材料的支撑构件支撑的压力的半导体材料的测量膜。氧化层和薄玻璃层介于测量膜片和支撑件之间。

32. 发明授权

US4511878A Pressure sensor with improved semiconductor diaphragm 失效
标题翻译：带有改进的半导体膜片的压力传感器
公开(公告)号：US4511878A
公开(公告)日：1985-04-16
申请号：US534076
申请日：1983-09-20
申请人： Satoshi Shimada , Ken Murayama , Shigeyuki Kobori , Kanji Kawakami
发明人： Satoshi Shimada , Ken Murayama , Shigeyuki Kobori , Kanji Kawakami
IPC分类号： G01L9/04 , G01L9/00 , G01L9/06
CPC分类号： G01L9/0054 , G01L19/147 , Y10S73/04
摘要： Provided is a pressure sensor of semiconductor type, having a semiconductor diaphragm, wherein the diaphragm comprises at least one of thin wall parts and at least one of thick wall parts, and defines therein recesses formed in the lower surface of the diaphragm below the thin wall parts, piezoresistance elements are laid on the upper surface of the diaphragm near the thin wall parts, and a supporting member is sealingly jointed to the thick wall parts at the lower surface of the diaphragm, so that the recesses are sealed and confined so as to prevent high pressure fluid from blowing off when the thin wall part is broken.
摘要翻译：提供一种具有半导体膜片的半导体型压力传感器，其中隔膜包括薄壁部分和至少一个厚壁部分中的至少一个，并且在其中限定形成在薄壁下方的隔膜的下表面中的凹部零件，压阻元件放置在薄壁部分附近的隔膜的上表面上，并且支撑构件与隔膜的下表面的厚壁部分密封地接合，使得凹部被密封和限制，以便当薄壁部分破裂时，防止高压液体吹走。

33. 发明授权

US4319397A Method of producing semiconductor displacement transducer 失效
标题翻译：半导体位移传感器的制造方法
公开(公告)号：US4319397A
公开(公告)日：1982-03-16
申请号：US165985
申请日：1980-07-07
申请人： Masanori Tanabe , Satoshi Shimada , Akio Yasukawa , Hideyuki Nemoto , Motohisa Nishihara , Masatoshi Tsuchiya , Ko Soeno
发明人： Masanori Tanabe , Satoshi Shimada , Akio Yasukawa , Hideyuki Nemoto , Motohisa Nishihara , Masatoshi Tsuchiya , Ko Soeno
IPC分类号： G01D5/16 , H01L29/84 , H01L21/58
CPC分类号： H01L29/84 , Y10T29/49103
摘要： A strain gauge is formed on one main surface of a semiconductor single crystal substrate while an insulating oxide film is formed on the other main surface of the substrate. A metal junction layer including several layers inclusive of eutectic alloy layers is formed on the surface of the insulating oxide film and the thus prepared structure is mounted on a metal strain generator. By heating this assembly to temperatures approximating to the eutectic point of the eutectic alloy layer, the semiconductor substrate and the metal strain generator are joined together.
摘要翻译：在半导体单晶基板的一个主表面上形成应变计，同时在基板的另一个主表面上形成绝缘氧化膜。在绝缘氧化膜的表面上形成包括共晶合金层的数层的金属接合层，将这样制作的结构安装在金属应变发生器上。通过将该组件加热到接近共晶合金层的共晶点的温度，将半导体衬底和金属应变发生器连接在一起。

34. 发明授权

US4065971A Semiconductor pressure transducer 失效
标题翻译：半导体压力传感器
公开(公告)号：US4065971A
公开(公告)日：1978-01-03
申请号：US701531
申请日：1976-07-01
申请人： Michitaka Shimazoe , Kousuke Nakamura , Yasuo Matsushita , Satoshi Shimada , Kazuji Yamada , Yukio Takahashi
发明人： Michitaka Shimazoe , Kousuke Nakamura , Yasuo Matsushita , Satoshi Shimada , Kazuji Yamada , Yukio Takahashi
IPC分类号： H01L29/84 , G01L9/00 , G01L9/06
CPC分类号： G01L9/0054
摘要： A semiconductor pressure transducer includes a monocrystalline semiconductor diaphragm, the outer edges of which are fixed. When subjected to pressure, the transducer produces radial strains of opposite polarity in a central portion thereof and a portion surrounding the central portion close to the edge of the strain inducing region. The diaphragm contains a plurality of elongated resistances formed of semiconductor material of the same conductivity type which are electrically isolated from the diaphragm, per se. Resistances of an individual set which lie in proximity to one another are combined in the form of a bridge. The longitudinal direction of resistances forming one set of opposing arms of the bridge extend along axes of the same crystal system as the longitudinal direction of the elongated resistances forming the other set of opposing arms of the bridge. However, the longitudinal directions of the separate sets of resistances forming the opposing arms of the bridge lie in directions so that they do not orthogonally intersect each other.
摘要翻译：半导体压力传感器包括其外边缘固定的单晶半导体膜片。当经受压力时，换能器在其中心部分产生相反极性的径向应变，并且围绕中心部分的部分靠近应变诱导区域的边缘产生。隔膜包含由与膜片电气隔离的相同导电类型的半导体材料形成的多个细长电阻。位于彼此靠近的单个组的电阻以桥的形式组合。形成桥的一组相对臂的电阻的纵向方向沿与构成桥的另一组相对臂的细长电阻的纵向相同的晶体系的轴线延伸。然而，形成桥的相对臂的单独的电阻组的纵向方向在方向上，使得它们不会彼此正交相交。

35. 发明授权

US07426154B2 Sensor adjusting circuit 有权
标题翻译：传感器调节电路
公开(公告)号：US07426154B2
公开(公告)日：2008-09-16
申请号：US11430975
申请日：2006-05-10
申请人： Masahiro Matsumoto , Satoshi Shimada , Seikou Suzuki , Akihiko Saito , Atsushi Miyazaki , Keiji Hanzawa
发明人： Masahiro Matsumoto , Satoshi Shimada , Seikou Suzuki , Akihiko Saito , Atsushi Miyazaki , Keiji Hanzawa
IPC分类号： G11C8/00 , G06F9/46
CPC分类号： G01D3/022 , G01D3/02
摘要： A sensor adjusting circuit for adjusting a digital sensor, whose circuit scale is small and which can maintain high accuracy in a wide adjustment range is provided. A sensor adjusting circuit for adjusting an analog input signal inputted from a sensor and outputting it as another analog output signal in accordance with a physical quantity to be sensed, comprises: a first analog-to-digital converter having an analog integrator (2) for integrating the analog input signal, a comparator (3) for comparing an output of the analog integrator with a predetermined value, and a D/A converter (7) for outputting an output of the comparator as the input signal; and a second digital-to-analog converter (5) for converting the output of the comparator and outputting it as the analog output signal.
摘要翻译：提供了一种用于调整数字传感器的传感器调节电路，其电路规模小并且可以在宽的调节范围内保持高精度。一种传感器调节电路，用于调节从传感器输入的模拟输入信号，并根据要感测的物理量将其输出为另一个模拟输出信号，包括：第一模数转换器，具有模拟积分器（2），用于积分模拟输入信号，比较器（3），用于将模拟积分器的输出与预定值进行比较;以及D / A转换器（7），用于输出比较器的输出作为输入信号; 以及用于转换比较器的输出并将其作为模拟输出信号输出的第二数模转换器（5）。

36. 发明授权

US06968289B1 Method of predicting displacement range of wire harness, predicting device and predicting program 失效
标题翻译：预测线束位移范围，预测装置和预测程序的方法
公开(公告)号：US06968289B1
公开(公告)日：2005-11-22
申请号：US10656264
申请日：2003-09-08
申请人： Shinji Tsuchiya , Takeshi Hasegawa , Satoshi Shimada
发明人： Shinji Tsuchiya , Takeshi Hasegawa , Satoshi Shimada
IPC分类号： H01B13/00 , B60R16/02 , G06F17/50 , H01B13/012 , H02G3/00 , H02G3/38 , H02G3/18
CPC分类号： B60R16/0207
摘要： A method of predicting a displacement range of a wire harness, includes the steps of: designing a basic route of the wire harness; fixing the wire harness at least two different fixing points on the basic route; computing a displacement range of the wire harness between the fixing points, based on a length of the basic route between the fixing points including a dimensional tolerance, fixing positions and fixing directions of the wire harness at the fixing points, and a minimum bending radius of the wire harness; and displaying the displacement range of the wire harness in three dimensions.
摘要翻译：一种预测线束的位移范围的方法，包括以下步骤：设计线束的基本路线; 将线束固定在基本路线上的至少两个不同的固定点; 基于固定点之间的基本路线的长度，包括固定点处的线束的尺寸公差，固定位置和固定方向以及最小弯曲半径计算固定点之间的线束的位移范围线束; 并且在三维中显示线束的位移范围。

37. 发明授权

US06938420B2 Supercharger for internal combustion engine 有权
标题翻译：内燃机增压器
公开(公告)号：US06938420B2
公开(公告)日：2005-09-06
申请号：US10623564
申请日：2003-07-22
申请人： Katsuhiko Kawamura , Kenichi Fujimura , Ryou Ikegami , Susumu Kubo , Hideharu Kadooka , Naoki Mishima , Motoyuki Hattori , Satoshi Shimada
发明人： Katsuhiko Kawamura , Kenichi Fujimura , Ryou Ikegami , Susumu Kubo , Hideharu Kadooka , Naoki Mishima , Motoyuki Hattori , Satoshi Shimada
IPC分类号： F02B33/34 , F02B33/44 , F02B37/04 , F02B37/16 , F02B39/10 , F02D23/00 , F02D41/00 , F02B33/00 , F02B37/14
CPC分类号： F02D23/00 , F02B33/34 , F02B33/44 , F02B37/04 , F02B37/16 , F02B39/10 , F02D41/0007 , F02D41/187 , F02D2200/0402 , F02D2200/0406 , F02D2200/0414 , Y02T10/144
摘要： A first compressor (1a) which supercharges intake air is provided in the intake passage (6, 20, 21) of an internal combustion engine (12). The first compressor (1a) is driven by the exhaust gas energy of the engine (12). A second compressor (2a) driven by an electric motor (2b), and a bypass valve (3) which bypasses the second compressor (2a), are provided in the intake passage (7, 20, 21) between the first compressor (1a) and the engine (12). The bypass valve (3) shifts from the open state to the closed state according to the operation of the second compressor (2a). At this time, the bypass valve (3) starts closing at some time after startup of the second compressor (2a) so that the intake air amount of the engine (12) is not deficient.
摘要翻译：在内燃机（12）的进气通道（6,20,21）中设置增压进气的第一压缩机（1a）。第一压缩机（1a）由发动机（12）的排气能量驱动。由电动机（2b）驱动的第二压缩机（2a）和绕过第二压缩机（2a）的旁通阀（3）设置在进气通道（7,20,21）之间，第一压缩机压缩机（1a）和发动机（12）。旁通阀（3）根据第二压缩机（2a）的运转从打开状态转移到关闭状态。此时，旁通阀（3）在启动第二压缩机（2a）之后的某个时刻开始关闭，使得发动机（12）的进气量不足。

38. 发明授权

US06601453B2 Pressure detecting apparatus 有权
标题翻译：压力检测装置
公开(公告)号：US06601453B2
公开(公告)日：2003-08-05
申请号：US10101526
申请日：2002-03-20
申请人： Atsushi Miyazaki , Katsuhiko Kikuchi , Hiromichi Ebine , Satoshi Shimada , Masahide Hayashi
发明人： Atsushi Miyazaki , Katsuhiko Kikuchi , Hiromichi Ebine , Satoshi Shimada , Masahide Hayashi
IPC分类号： G01L916
CPC分类号： G01L19/147 , G01L19/0038 , G01L19/0084 , G01L19/148 , H01L2224/48091 , H01L2924/00014
摘要： The present invention provides a pressure detector capable of easily responding to changes in specification. The pressure detector has a sensor unit for detecting pressure and electronic parts for reducing electrical disturbance which are electrically joined to an exposed part of lead material of an opening of an external case. Thermoset resin is injected and set in the opening to obtain fixed members. An external electronic part for compensating for transient voltage resistance and electromagnetic failure resistance of a single one-chip semiconductor sensor can be mounted, and cost can be reduced by miniaturization, light weight, and reduction in man-hours required for assembly.
摘要翻译：本发明提供一种能够容易地响应于规格变化的压力检测器。压力检测器具有用于检测压力的传感器单元和用于减少电气干扰的电子部件，其电连接到外部壳体的开口的引线材料的暴露部分。将热固性树脂注入并置于开口中以获得固定构件。可以安装用于补偿单个单芯片半导体传感器的瞬态电压和电磁破坏电阻的外部电子部件，并且可以通过小型化，轻量化和组装所需的工时减少成本。

39. 发明授权

US06564643B1 Capacitive pressure sensor 有权
标题翻译：电容式压力传感器
公开(公告)号：US06564643B1
公开(公告)日：2003-05-20
申请号：US09807325
申请日：2001-04-12
申请人： Junichi Horie , Atsushi Miyazaki , Satoshi Shimada , Akihiko Saitou , Yasuo Onose , Norio Ichikawa , Keiji Hanzawa
发明人： Junichi Horie , Atsushi Miyazaki , Satoshi Shimada , Akihiko Saitou , Yasuo Onose , Norio Ichikawa , Keiji Hanzawa
IPC分类号： G01L912
CPC分类号： G01L9/0073
摘要： A high-accuracy high-stability capacitor type pressure sensor which eliminates a parasitic capacitance between a reference capacitor and a semiconductor substrate. A capacitor type pressure sensor comprising, on a semiconductor substrate 10, an active capacitor 100 whose capacitance varies as the surrounding pressure varies, a reference capacitor 200 whose capacitance will not vary substantially as the surrounding pressure varies, and a circuit which is electrically connected to both said active and reference capacitors 100 and 200, detects the difference or ratio thereof, and uses the potential of a semiconductor substrate, wherein an electrode 30a of said reference capacitor is formed on the semiconductor substrate 10 with a dielectric 20 therebetween.
摘要翻译：一种消除参考电容器和半导体衬底之间的寄生电容的高精度高稳定性电容式压力传感器。一种电容式压力传感器，包括在半导体衬底10上的电容随着周围压力变化而变化的有源电容器100，其电容量不会随周围压力变化而变化不大的参考电容器200以及电连接到所述有源和参考电容器100和200都检测其差异或比例，并且使用半导体衬底的电位，其中所述参考电容器的电极30a形成在半导体衬底10上，其间具有电介质20。

40. 发明授权

US06353258B1 Semiconductor module 失效
标题翻译：半导体模块
公开(公告)号：US06353258B1
公开(公告)日：2002-03-05
申请号：US09603966
申请日：2000-06-26
申请人： Hirokazu Inoue , Ryuichi Saito , Mutsuhiro Mori , Yasutoshi Kurihara , Jin Onuki , Shin Kimura , Satoshi Shimada , Kazuhiro Suzuki , Yukio Kamita , Isao Kobayashi , Kazuji Yamada , Naohiro Momma
发明人： Hirokazu Inoue , Ryuichi Saito , Mutsuhiro Mori , Yasutoshi Kurihara , Jin Onuki , Shin Kimura , Satoshi Shimada , Kazuhiro Suzuki , Yukio Kamita , Isao Kobayashi , Kazuji Yamada , Naohiro Momma
IPC分类号： H01L2334
CPC分类号： H01L23/5386 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/072 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/48699 , H01L2224/48747 , H01L2224/49111 , H01L2224/49113 , H01L2224/73265 , H01L2224/85447 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/16151 , H01L2924/16315 , H01L2924/181 , H01L2924/2076 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： A semiconductor module has a plurality of power semiconductor devices mounted on a substrate, and a metal foil for wiring is mounted on the substrate so that an asymmetric unit arrangement of the semiconductor devices is formed. In the device, all of the units are arranged in the same direction on the substrate, and all of the units are electrically connected with electrode terminal feet, and the electrode terminal feet are electrically connected with linkage terminal foot. The electrode terminal feet are disposed with a certain interval.
摘要翻译：半导体模块具有安装在基板上的多个功率半导体器件，并且用于布线的金属箔安装在基板上，从而形成半导体器件的不对称单元布置。在该装置中，所有单元在基板上沿相同的方向排列，并且所有单元与电极端子脚电连接，并且电极端子脚与联动端子脚电连接。电极端子脚以一定间隔设置。

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