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31. 发明授权

US06870948B2 Method and apparatus for numerically analyzing grain growth on semiconductor wafer using SEM image 失效
标题翻译：使用SEM图像对半导体晶片上的晶粒生长进行数值分析的方法和装置
公开(公告)号：US06870948B2
公开(公告)日：2005-03-22
申请号：US09977238
申请日：2001-10-16
申请人： Chung-sam Jun , Sang-Mun Chon , Sang-Bong Choi , Kye-Weon Kim , Sang-Hoon Lee , Yu-Sin Yang , Sang-Min Kim , Sang-Kil Lee
发明人： Chung-sam Jun , Sang-Mun Chon , Sang-Bong Choi , Kye-Weon Kim , Sang-Hoon Lee , Yu-Sin Yang , Sang-Min Kim , Sang-Kil Lee
IPC分类号： G01B15/00 , G01B15/08 , G01N15/00 , G01N15/14 , G01N23/20 , G01N23/225 , G06T1/00 , G06T7/00 , H01L21/66 , G06K9/00 , H01L21/8242
CPC分类号： G06T7/0004 , G01N15/1475 , G01N2015/0092 , G06T2207/30148 , H01J2237/2815
摘要： A method and apparatus for numerically analyzing a growth degree of grains grown on a surface of a semiconductor wafer, in which the growth degree of grains is automatically calculated and numerated through a computer by using an image file of the surface of the semiconductor wafer scanned by an SEM. A predetermined portion of a surface of the wafer is scanned using the SEM, and the scanned SEM image is simultaneously stored into a database. An automatic numerical program applies meshes to an analysis screen frame and selects an analysis area on a measured image. Thereafter, a smoothing process for reducing an influence of noise is performed on respective pixels designated by the meshes using an average value of image data of adjacent pixels. A standardization process is then performed, based on respective images in order to remove a brightness difference between the measured images. After comparing standardized image data values of the respective pixels with a predetermined threshold value, the number of pixels whose standardized image data value is greater than the threshold value is counted. The growth degree of grains on the surface of the wafer is calculated by numerating a ratio of the counted number with respect to a total number of the pixels contained within the analysis target image.
摘要翻译：一种用于数值分析生长在半导体晶片的表面上的晶粒的生长度的方法和装置，其中通过使用由半导体晶片的表面扫描的半导体晶片的表面的图像文件自动计算和计算晶粒的生长度 SEM。使用SEM扫描晶片的表面的预定部分，并将扫描的SEM图像同时存储到数据库中。自动数值程序将网格应用于分析屏幕框架，并在测量图像上选择分析区域。此后，使用相邻像素的图像数据的平均值对由网格指定的各个像素执行用于减少噪声的影响的平滑处理。然后基于相应的图像执行标准化处理，以便去除所测量的图像之间的亮度差异。在将各像素的标准化图像数据值与预定阈值进行比较之后，对标准化图像数据值大于阈值的像素数进行计数。通过对计数的数量相对于分析对象图像中包含的像素的总数的比率进行计算来计算晶片表面上的晶粒的生长度。

32. 发明授权

US06682876B2 Thinner composition and method of stripping a photoresist using the same 有权
标题翻译：较薄的组合物和使用该方法剥离光致抗蚀剂的方法
公开(公告)号：US06682876B2
公开(公告)日：2004-01-27
申请号：US10378615
申请日：2003-03-05
申请人： Seung-Hyun Ahn , Sang-Mun Chon , Hoe-Sik Chung , Mi-Sook Jeon , Eun-Mi Bae , Baik-Soon Choi , Ok-Seok Jang , Young-Cheul Lim
发明人： Seung-Hyun Ahn , Sang-Mun Chon , Hoe-Sik Chung , Mi-Sook Jeon , Eun-Mi Bae , Baik-Soon Choi , Ok-Seok Jang , Young-Cheul Lim
IPC分类号： G03F742
CPC分类号： G03F7/422 , G03F7/168
摘要： A thinner composition is effective in removing a variety of photoresists, and includes propylene glycol mono-methyl ether acetate, ethyl 3-ethoxy propionate and at least one of &ggr;-butyro lactone and propylene glycol mono-methyl ether. The thinner composition can selectively strip a photoresist coated on a backside and at an edge portion of a substrate, as well as a photoresist coated on a whole front surface of the substrate.
摘要翻译：更薄的组合物有效去除各种光致抗蚀剂，并且包括丙二醇单甲醚乙酸酯，3-乙氧基丙酸乙酯和γ-丁内酯和丙二醇单甲醚中的至少一种。更薄的组合物可以选择性地剥离涂覆在基材的背面和边缘部分上的光致抗蚀剂以及涂覆在基材的整个前表面上的光致抗蚀剂。

33. 发明授权

US6165841A Method for fabricating capacitors with hemispherical grains 有权
标题翻译：制造具有半球形电容器的方法
公开(公告)号：US6165841A
公开(公告)日：2000-12-26
申请号：US289611
申请日：1999-04-12
申请人： Dong-Won Kim , Doo-Heun Beak , Jeong-Kon Kim , Sang-Mun Chon
发明人： Dong-Won Kim , Doo-Heun Beak , Jeong-Kon Kim , Sang-Mun Chon
IPC分类号： H01L27/04 , H01L21/02 , H01L21/3213 , H01L21/60 , H01L21/822 , H01L21/8242 , H01L27/108
CPC分类号： H01L28/84 , H01L21/32134 , H01L27/10811
摘要： A method for fabricating a semiconductor device, including a lower electrode layer having hemispherical grains, an upper electrode layer, and a dielectric layer interposed between the lower and upper electrode layers. Si-dangling bonds existing on the surface of an amorphous silicon layer dry etched using a lower electrode layer pattern are controlled so that an active migration of silicon atoms from the amorphous silicon layer surface is achieved, so that growth of hemispherical grains on the surface of the amorphous silicon layer is enabled to provide a lower electrode layer with an increased surface area. The amorphous silicon layer is formed with a passivation film of hydrogen thereon which suppresses the growth of natural oxide films and which can be desorbed from that layer at a low temperature during an annealing process carried out in an ultra-high vacuum CVD device for the formation of hemispherical grains. As a result, a large amount of Si-dangling bonds are formed on the surface of the amorphous silicon layer and the migration of silicon atoms is enhanced during the formation of hemispherical grains.
摘要翻译：一种制造半导体器件的方法，包括具有半球形晶粒的下电极层，上电极层和插入在下电极层和上电极层之间的电介质层。控制存在于使用下电极层图案干蚀刻的非晶硅层的表面上的Si-悬挂键，从而实现硅原子从非晶硅层表面的主动迁移，使得半球状晶粒在表面上的生长非晶硅层能够提供具有增加的表面积的下电极层。非晶硅层由其上的氢钝化膜形成，其抑制天然氧化物膜的生长，并且可以在用于形成的超高真空CVD装置中进行的退火工艺期间在低温下从该层脱离的半球形颗粒。结果，在非晶硅层的表面上形成大量的Si-悬挂键，并且在形成半球状晶粒期间硅原子的迁移增强。

34. 发明授权

US07863231B2 Thinner composition and method of removing photoresist using the same 有权
标题翻译：较薄的组成和使用其去除光致抗蚀剂的方法
公开(公告)号：US07863231B2
公开(公告)日：2011-01-04
申请号：US12118778
申请日：2008-05-12
申请人： Seung-Hyun Ahn , Eun-Mi Bae , Baik-Soon Choi , Sang-Mun Chon , Dae-Joung Kim , Kwang-sub Yoon , Sang-Kyu Park , Jae-Ho Kim , Shi-Yong Yi , Kyoung-Mi Kim , Yeu-Young Youn
发明人： Seung-Hyun Ahn , Eun-Mi Bae , Baik-Soon Choi , Sang-Mun Chon , Dae-Joung Kim , Kwang-sub Yoon , Sang-Kyu Park , Jae-Ho Kim , Shi-Yong Yi , Kyoung-Mi Kim , Yeu-Young Youn
IPC分类号： C11D7/50
CPC分类号： C11D7/266 , C11D11/0047
摘要： A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.
摘要翻译：较薄的组合物包括丙二醇醚乙酸酯，2-羟基-2-甲基丙酸甲酯和酯化合物如乳酸乙酯，3-乙氧基丙酸乙酯或它们的混合物。

35. 发明授权

US07678751B2 Composition for removing photoresist, method of removing photoresist and method of manufacturing a semiconductor device using the same 有权
标题翻译：用于除去光致抗蚀剂的组合物，去除光致抗蚀剂的方法及使用其制造半导体器件的方法
公开(公告)号：US07678751B2
公开(公告)日：2010-03-16
申请号：US11296000
申请日：2005-12-06
申请人： Jung-Dae Park , Sang-Eon Lee , Sang-Mun Chon , Yang-Koo Lee , Dong-Chul Heo , Pil-Kwon Jun
发明人： Jung-Dae Park , Sang-Eon Lee , Sang-Mun Chon , Yang-Koo Lee , Dong-Chul Heo , Pil-Kwon Jun
IPC分类号： C11D7/50
CPC分类号： C11D7/264 , C11D7/5009 , C11D7/5013 , C11D7/5022 , C11D11/0047
摘要： Disclosed are a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using a composition. The composition may include a ketone compound and a first polar aprotic solvent. The composition may also include the ketone compound and a second polar aprotic solvent. Moreover, the composition may include the first polar aprotic solvent and a second polar aprotic solvent with or without the ketone compound. The first polar aprotic solvent has at least one of an ether compound and an ester compound, and the second polar aprotic solvent has at least one of a sulfur-containing compound and a nitrogen-containing compound.
摘要翻译：公开了除去光致抗蚀剂的组合物，去除光刻胶的方法以及使用组合物制造半导体器件的方法。组合物可以包括酮化合物和第一极性非质子溶剂。组合物还可以包括酮化合物和第二极性非质子溶剂。此外，组合物可以包括第一极性非质子溶剂和具有或不具有酮化合物的第二极性非质子溶剂。第一极性非质子溶剂具有醚化合物和酯化合物中的至少一种，第二极性非质子溶剂具有含硫化合物和含氮化合物中的至少一种。

36. 发明授权

US07387988B2 Thinner composition and method of removing photoresist using the same 有权
标题翻译：较薄的组成和使用其去除光致抗蚀剂的方法
公开(公告)号：US07387988B2
公开(公告)日：2008-06-17
申请号：US11049751
申请日：2005-02-04
申请人： Seung-Hyun Ahn , Eun-Mi Bae , Baik-Soon Choi , Sang-Mun Chon , Dae-Joung Kim , Kwang-Sub Yoon , Sang-Kyu Park , Jae-Ho Kim , Shi-Yong Yi , Kyoung-Mi Kim , Yeu-Young Youn
发明人： Seung-Hyun Ahn , Eun-Mi Bae , Baik-Soon Choi , Sang-Mun Chon , Dae-Joung Kim , Kwang-Sub Yoon , Sang-Kyu Park , Jae-Ho Kim , Shi-Yong Yi , Kyoung-Mi Kim , Yeu-Young Youn
IPC分类号： C11D7/50
CPC分类号： C11D7/266 , C11D11/0047
摘要： A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.
摘要翻译：较薄的组合物包括丙二醇醚乙酸酯，2-羟基-2-甲基丙酸甲酯和酯化合物如乳酸乙酯，3-乙氧基丙酸乙酯或它们的混合物。

37. 发明授权

US07310140B2 Method and apparatus for inspecting a wafer surface 有权
标题翻译：检查晶片表面的方法和装置
公开(公告)号：US07310140B2
公开(公告)日：2007-12-18
申请号：US10877684
申请日：2004-06-25
申请人： Tae-Min Eom , Yu-Sin Yang , Chung-Sam Jun , Yun-Jung Jee , Joung-Soo Kim , Moon-Kyung Kim , Sang-Mun Chon , Sun-Yong Choi
发明人： Tae-Min Eom , Yu-Sin Yang , Chung-Sam Jun , Yun-Jung Jee , Joung-Soo Kim , Moon-Kyung Kim , Sang-Mun Chon , Sun-Yong Choi
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/47 , G01N21/55 , G01N2021/556
摘要： In a method and an apparatus for inspecting a wafer surface, a wafer is loaded into a chamber. An incident light including a first light for sensing a vertical position of the wafer and a second light for inspecting the wafer surface is irradiated onto the wafer. The first light is reflected on an inspection region or a next inspection region of the wafer and is detected to control a wafer position. The second light is scattered on the inspection region and is detected to inspect the wafer surface of the inspection region. Position information of a wafer is examined and a position of the wafer is adjusted before inspecting a surface of inspection region of a wafer so as to enable accurate inspection of the wafer surface.
摘要翻译：在用于检查晶片表面的方法和装置中，将晶片装入室中。将包括用于感测晶片的垂直位置的第一光和用于检查晶片表面的第二光的入射光照射到晶片上。第一光被反射在晶片的检查区域或下一个检查区域上，并被检测以控制晶片位置。第二光被分散在检查区域上，并被检测以检查检查区域的晶片表面。在检查晶片的检查区域的表面之前检查晶片的位置信息并调整晶片的位置，以便能够精确地检查晶片表面。

38. 发明授权

US07183192B2 Composition for removing photoresist and method of forming a bump electrode in a semiconductor device using the composition 有权
标题翻译：用于除去光致抗蚀剂的组合物和使用该组合物在半导体器件中形成凸块电极的方法
公开(公告)号：US07183192B2
公开(公告)日：2007-02-27
申请号：US10858472
申请日：2004-06-02
申请人： Dong-Jin Park , Sang-Mun Chon , In-Hoi Doh , Pil-Kwon Jun
发明人： Dong-Jin Park , Sang-Mun Chon , In-Hoi Doh , Pil-Kwon Jun
IPC分类号： H01L21/44
CPC分类号： C11D11/0047 , C11D7/3218 , C11D7/3263 , G03F7/425 , H01L21/31133 , H01L24/11 , H01L2224/03912 , H01L2224/0401 , H01L2224/05124 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/1147 , H01L2224/13099 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01033 , H01L2924/01046 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/00014
摘要： A passivation layer pattern having an opening is formed on a substrate having a metal wiring pattern formed thereon. The opening partially exposes an upper surface of the metal wiring pattern. A photoresist pattern is formed on the passivation layer pattern. The photoresist pattern has an opening that exposes the opening of the passivation layer pattern, and metal is electroplated in the openings to form a bump electrode. The photoresist pattern is removed using a composition including monoethanolamine and dimethylacetamide.
摘要翻译：在其上形成有金属布线图案的基板上形成具有开口的钝化层图案。开口部分露出金属布线图案的上表面。在钝化层图案上形成光刻胶图形。光致抗蚀剂图案具有暴露钝化层图案的开口的开口，并且在开口中电镀金属以形成凸块电极。使用包含单乙醇胺和二甲基乙酰胺的组合物除去光致抗蚀剂图案。

39. 发明申请

US20060122084A1 Composition for removing photoresist, method of removing photoresist and method of manufacturing a semiconductor device using the same 有权
标题翻译：用于除去光致抗蚀剂的组合物，去除光致抗蚀剂的方法及使用其制造半导体器件的方法
公开(公告)号：US20060122084A1
公开(公告)日：2006-06-08
申请号：US11296000
申请日：2005-12-06
申请人： Jung-Dae Park , Sang-Eon Lee , Sang-Mun Chon , Yang-Koo Lee , Dong-Chul Heo , Pil-Kwon Jun
发明人： Jung-Dae Park , Sang-Eon Lee , Sang-Mun Chon , Yang-Koo Lee , Dong-Chul Heo , Pil-Kwon Jun
IPC分类号： C11D7/32
CPC分类号： C11D7/264 , C11D7/5009 , C11D7/5013 , C11D7/5022 , C11D11/0047
摘要： Disclosed are a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using a composition. The composition may include a ketone compound and a first polar aprotic solvent. The composition may also include the ketone compound and a second polar aprotic solvent. Moreover, the composition may include the first polar aprotic solvent and a second polar aprotic solvent with or without the ketone compound. The first polar aprotic solvent has at least one of an ether compound and an ester compound, and the second polar aprotic solvent has at least one of a sulfur-containing compound and a nitrogen-containing compound.
摘要翻译：公开了除去光致抗蚀剂的组合物，去除光刻胶的方法以及使用组合物制造半导体器件的方法。组合物可以包括酮化合物和第一极性非质子溶剂。组合物还可以包括酮化合物和第二极性非质子溶剂。此外，组合物可以包括第一极性非质子溶剂和具有或不具有酮化合物的第二极性非质子溶剂。第一极性非质子溶剂具有醚化合物和酯化合物中的至少一种，第二极性非质子溶剂具有含硫化合物和含氮化合物中的至少一种。

40. 发明申请

US20060082766A1 Method of inspecting defects and apparatus for performing the same 有权
标题翻译：检查缺陷的方法及其执行装置
公开(公告)号：US20060082766A1
公开(公告)日：2006-04-20
申请号：US11253028
申请日：2005-10-17
申请人： Joung-Soo Kim , Sang-Mun Chon , Chung-Sam Jun , Yu-Sin Yang
发明人： Joung-Soo Kim , Sang-Mun Chon , Chung-Sam Jun , Yu-Sin Yang
IPC分类号： G01N21/88
CPC分类号： G01N21/95607 , G01N21/21 , G01N21/47
摘要： In a method of inspecting defects, a first actual region of an actual object is inspected based on a first characteristic parameter as an inspection condition. A point where an inspection region of the actual object is changed into a second actual region from the first actual region is determined. The second actual region is then inspected based on a second characteristic parameter as the inspection condition. The first and second parameters may include contrast of a light that is reflected from a reference object, intensity of the light, brightness of the light, a size of a minute structure on the reference object, etc. The characteristic parameters of each reference region on the reference object are set. Thus, the defects may be accurately classified so that a time and a cost for reviewing the defects may be markedly reduced.
摘要翻译：在检查缺陷的方法中，基于作为检查条件的第一特征参数来检查实际物体的第一实际区域。确定实际物体的检查区域从第一实际区域变为第二实际区域的点。然后基于作为检查条件的第二特征参数检查第二实际区域。第一和第二参数可以包括从参考对象反射的光的对比度，光的强度，光的亮度，参考对象上的微小结构的大小等。每个参考区域的特征参数在参考对象被设置。因此，可以将缺陷精确地分类，从而可以显着降低检查缺陷的时间和成本。

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