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31. 发明授权

US07811842B2 LED array 有权
标题翻译： LED阵列
公开(公告)号：US07811842B2
公开(公告)日：2010-10-12
申请号：US11622150
申请日：2007-01-11
申请人： Wen-Huang Liu , Jui-Kang Yen
发明人： Wen-Huang Liu , Jui-Kang Yen
IPC分类号： G01R31/28
CPC分类号： H01L25/0753 , G01R31/2635 , H01L33/62 , H01L2224/45144 , H01L2224/48137 , Y10T29/49004 , Y10T29/53022 , H01L2924/00
摘要： Methods for fabricating light-emitting diode (LED) array structures comprising multiple vertical LED stacks coupled to a single metal substrate is provided. The LED array structure may comprise two, three, four, or more LED stacks arranged in any configuration. Each of the LED stacks may have an individual external connection to make a common anode array since the p-doped regions of the LED stacks are all coupled to the metal substrate, or some to all of the n-doped regions of the LED stacks may be electrically connected to create a parallel LED array. Such LED arrays may offer better heat conduction and improved matching of LED characteristics (e.g., forward voltage and emission wavelength) between the individual LED stacks compared to conventional LED arrays.
摘要翻译：提供了包括耦合到单个金属基板的多个垂直LED叠层的制造发光二极管（LED）阵列结构的方法。 LED阵列结构可以包括以任何配置布置的两个，三个，四个或更多个LED堆叠。每个LED堆叠可以具有单独的外部连接以形成公共阳极阵列，因为LED堆叠的p掺杂区域全部耦合到金属衬底，或者LED堆叠的一些至所有n掺杂区域电连接以产生并联LED阵列。与常规LED阵列相比，这样的LED阵列可以提供更好的热传导和改进的LED特征（例如，正向电压和发射波长）的匹配。

32. 外观设计

USD581884S1 Light emitting diode device 有权
标题翻译：发光二极管装置
公开(公告)号：USD581884S1
公开(公告)日：2008-12-02
申请号：US29284248
申请日：2007-09-04
申请人： Jui-Kang Yen
设计人： Jui-Kang Yen

33. 发明申请

US20070262341A1 VERTICAL LED WITH EUTECTIC LAYER 审中-公开
标题翻译：垂直LED与保护层
公开(公告)号：US20070262341A1
公开(公告)日：2007-11-15
申请号：US11382296
申请日：2006-05-09
申请人： WEN-HUANG LIU , Jui-Kang Yen
发明人： WEN-HUANG LIU , Jui-Kang Yen
IPC分类号： H01L33/00
CPC分类号： H01L33/641 , H01L24/32 , H01L33/60 , H01L33/62 , H01L2924/01322 , H01L2924/12041 , H01L2924/00
摘要： A vertical light-emitting diode (VLED) structure with a eutectic layer is described. The eutectic layer improves the heat conductivity of the device, thereby leading to increased brightness and higher luminous efficiency. The eutectic bonds of this layer also improve the reliability of the VLED structure since they have a lower coefficient of thermal expansion (CTE). A metal protective layer may be included to prevent diffusion of the eutectic layer thereby increasing the reliability and lifetime of the VLED structure. A reflective layer and/or a patterned surface may be added to this structure to further enhance the emitted light and increase the luminous efficiency.
摘要翻译：描述了具有共晶层的垂直发光二极管（VLED）结构。共晶层提高了器件的导热性，从而提高了亮度和提高了发光效率。该层的共晶键还提高了VLED结构的可靠性，因为它们具有较低的热膨胀系数（CTE）。可以包括金属保护层以防止共晶层的扩散，从而增加VLED结构的可靠性和寿命。可以向该结构添加反射层和/或图案化表面，以进一步增强发射光并增加发光效率。

34. 发明申请

US20120132952A1 LIGHT-EMITTING DIODE LAMP WITH LOW THERMAL RESISTANCE 有权
标题翻译：具有低耐热性的发光二极管灯
公开(公告)号：US20120132952A1
公开(公告)日：2012-05-31
申请号：US13324859
申请日：2011-12-13
申请人： Jui-Kang Yen
发明人： Jui-Kang Yen
IPC分类号： H01L33/52
CPC分类号： H01L33/647 , H01L33/486 , H01L33/641 , H01L2224/32225 , H01L2224/32245 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2924/00
摘要： A light-emitting diode (LED) structure with an improved heat transfer path with a lower thermal resistance than conventional LED lamps is provided. For some embodiments, a surface-mountable light-emitting diode structure is provided having an active layer deposited on a substrate directly bonded to a metal plate that is substantially exposed for low thermal resistance by positioning the metal plate at the bottom of the light-emitting diode structure. This metal plate may then be soldered to a printed circuit board (PCB) that includes a heat sink. For some embodiments of the invention, the metal plate is thermally and electrically conductively coupled through several heat conduction layers to a large heat sink that may be included in the structure.
摘要翻译：提供了一种具有比传统LED灯具更低热传导路径的发光二极管（LED）结构。对于一些实施例，提供了一种可表面安装的发光二极管结构，其具有沉积在基板上的有源层，所述有源层直接接合到金属板上，所述金属板基本上暴露于低热阻，通过将金属板定位在发光的底部二极管结构。然后将该金属板焊接到包括散热器的印刷电路板（PCB）。对于本发明的一些实施例，金属板通过几个导热层被热和电传导耦合到可以包括在结构中的大散热器。

35. 发明申请

US20120086035A1 LED Device With A Light Extracting Rough Structure And Manufacturing Methods Thereof 审中-公开
标题翻译： LED装置用光提取粗糙结构及其制造方法
公开(公告)号：US20120086035A1
公开(公告)日：2012-04-12
申请号：US13303398
申请日：2011-11-23
申请人： Jui-Kang Yen
发明人： Jui-Kang Yen
IPC分类号： H01L33/60 , H01L33/52
CPC分类号： H01L33/54 , H01L33/58 , H01L2224/48091 , H01L2224/48227 , H01L2924/01087 , H01L2924/09701 , H01L2933/0091 , H01L2924/00014
摘要： A light emitting diode device includes a substrate, one or more light emitting diode chips on the substrate configured to emit electromagnetic radiation, and a lens configured to encapsulate the light emitting diode chips having a surface with a micro-roughness structure. The micro-roughness structure functions to improve the light extraction of the electromagnetic radiation and to direct the electromagnetic radiation outward from the lens.
摘要翻译：发光二极管装置包括基板，被配置为发射电磁辐射的基板上的一个或多个发光二极管芯片，以及被配置为封装具有微粗糙结构的表面的发光二极管芯片的透镜。微粗糙结构用于改善电磁辐射的光提取并将电磁辐射从透镜向外引导。

36. 发明授权

US08101966B2 Light-emitting diode lamp with low thermal resistance 有权
标题翻译：具有低热阻的发光二极管灯
公开(公告)号：US08101966B2
公开(公告)日：2012-01-24
申请号：US12942872
申请日：2010-11-09
申请人： Jui-Kang Yen
发明人： Jui-Kang Yen
IPC分类号： H01L33/00
CPC分类号： H01L33/647 , H01L24/73 , H01L33/486 , H01L33/641 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/00012
摘要： A light-emitting diode (LED) structure with an improved heat transfer path with a lower thermal resistance than conventional LED lamps is provided. For some embodiments, a surface-mountable light-emitting diode structure is provided having an active layer deposited on a metal substrate directly bonded to a metal plate that is substantially exposed for low thermal resistance by positioning it on the bottom of the light-emitting diode structure. This metal plate can then be soldered to a printed circuit board (PCB) that includes a heat sink. For some embodiments of the invention, the metal plate is thermally and electrically conductively connected through several heat conduction layers to a large heat sink that may be included in the structure.
摘要翻译：提供了一种具有比传统LED灯具更低热传导路径的发光二极管（LED）结构。对于一些实施例，提供了一种可表面安装的发光二极管结构，其具有沉积在金属基板上的有源层，该有源层直接接合到金属板上，该金属板通过将其定位在发光二极管的底部而基本上暴露于低热阻结构体。然后将该金属板焊接到包括散热器的印刷电路板（PCB）。对于本发明的一些实施例，金属板通过几个导热层被热导电地连接到可以包括在结构中的大型散热器。

37. 发明申请

US20110111537A1 HIGH THERMAL CONDUCTIVITY SUBSTRATE FOR A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于半导体器件的高导热性衬底
公开(公告)号：US20110111537A1
公开(公告)日：2011-05-12
申请号：US13006226
申请日：2011-01-13
申请人： CHING-TAI CHENG , Jui-Kang Yen
发明人： CHING-TAI CHENG , Jui-Kang Yen
IPC分类号： H01L33/48 , H01L21/60
CPC分类号： H01L33/641 , H01L24/97 , H01L33/486 , H01L2224/48091 , H01L2224/48227 , H01L2924/01322 , H01L2924/12041 , H01L2924/15787 , H01L2924/00014 , H01L2924/00
摘要： A method and apparatus for packaging semiconductor dies for increased thermal conductivity and simpler fabrication when compared to conventional semiconductor packaging techniques are provided. The packaging techniques described herein may be suitable for various semiconductor devices, such as light-emitting diodes (LEDs), central processing units (CPUs), graphics processing units (GPUs), microcontroller units (MCUs), and digital signal processors (DSPs). For some embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower cavity with one or more metal layers deposited therein to dissipate heat away from the semiconductor dies. For other embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower surface with one or more metal layers deposited thereon for efficient heat dissipation.
摘要翻译：提供了一种用于封装半导体管芯以提高导热性并且与常规半导体封装技术相比更简单的制造的方法和装置。本文描述的封装技术可适用于各种半导体器件，例如发光二极管（LED），中央处理单元（CPU），图形处理单元（GPU），微控制器单元（MCU）和数字信号处理器（DSP）。对于一些实施例，封装包括陶瓷衬底，其具有上空腔，其中设置有一个或多个半导体管芯，并且具有沉积有一个或多个金属层的下部空腔，以将散热从半导体管芯散出。对于其它实施例，封装包括陶瓷衬底，该陶瓷衬底具有上空腔，其中设置有一个或多个半导体管芯，并且具有下表面，其上沉积有一个或多个金属层，用于有效散热。

38. 发明授权

US07892891B2 Die separation 有权
标题翻译：模具分离
公开(公告)号：US07892891B2
公开(公告)日：2011-02-22
申请号：US11548647
申请日：2006-10-11
申请人： Chen-Fu Chu , Trung Tri Doan , Chuong Anh Tran , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
发明人： Chen-Fu Chu , Trung Tri Doan , Chuong Anh Tran , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/12 , B23K2103/14 , B23K2103/172 , B23K2103/50 , H01L21/78 , H01S5/0201 , H01S5/0202 , H01S5/32341
摘要： Techniques for dicing wafer assemblies containing multiple metal device dies, such as vertical light-emitting diode (VLED), power device, laser diode, and vertical cavity surface emitting laser device dies, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, such techniques are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于切割包含多个金属器件管芯（例如垂直发光二极管（VLED）），功率器件，激光二极管和垂直腔表面发射激光器件管芯的晶片组件的技术。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，在具有原始非（或低）导热和/或非（或低）导电载体的金属器件的高散热率的情况下，这种技术可应用于GaN基电子器件已被去除的底物。

39. 发明申请

US20100298965A1 LED ARRAY 审中-公开
标题翻译： LED阵列
公开(公告)号：US20100298965A1
公开(公告)日：2010-11-25
申请号：US12852321
申请日：2010-08-06
申请人： Wen-Huang Liu , Jui-Kang Yen
发明人： Wen-Huang Liu , Jui-Kang Yen
IPC分类号： H01L21/66 , H01L33/62 , G06F17/00
CPC分类号： H01L25/0753 , G01R31/2635 , H01L33/62 , H01L2224/45144 , H01L2224/48137 , Y10T29/49004 , Y10T29/53022 , H01L2924/00
摘要： Methods for fabricating light-emitting diode (LED) array structures comprising multiple vertical LED stacks coupled to a single metal substrate is provided. The LED array structure may comprise two, three, four, or more LED stacks arranged in any configuration. Each of the LED stacks may have an individual external connection to make a common anode array since the p-doped regions of the LED stacks are all coupled to the metal substrate, or some to all of the n-doped regions of the LED stacks may be electrically connected to create a parallel LED array. Such LED arrays may offer better heat conduction and improved matching of LED characteristics (e.g., forward voltage and emission wavelength) between the individual LED stacks compared to conventional LED arrays.
摘要翻译：提供了包括耦合到单个金属基板的多个垂直LED叠层的制造发光二极管（LED）阵列结构的方法。 LED阵列结构可以包括以任何配置布置的两个，三个，四个或更多个LED堆叠。每个LED堆叠可以具有单独的外部连接以形成公共阳极阵列，因为LED堆叠的p掺杂区域全部耦合到金属衬底，或者LED堆叠的一些至所有n掺杂区域电连接以产生并联LED阵列。与常规LED阵列相比，这样的LED阵列可以提供更好的热传导和改进的LED特征（例如，正向电压和发射波长）的匹配。

40. 发明授权

US07723718B1 Epitaxial structure for metal devices 有权
标题翻译：金属器件的外延结构
公开(公告)号：US07723718B1
公开(公告)日：2010-05-25
申请号：US11548614
申请日：2006-10-11
申请人： Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
发明人： Trung Tri Doan , Chuong Anh Tran , Chen-Fu Chu , Chao-Chen Cheng , Jiunn-Yi Chu , Wen-Huang Liu , Hao-Chun Cheng , Feng-Hsu Fan , Jui-Kang Yen
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46 , H01S5/0201 , H01S5/0217 , H01S5/32341
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。（或低）导电载体衬底。

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