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31. 发明申请

US20060275706A1 Immersion lithography contamination gettering layer 失效
标题翻译：浸没光刻污染吸气层
公开(公告)号：US20060275706A1
公开(公告)日：2006-12-07
申请号：US11144857
申请日：2005-06-03
申请人： Daniel Corliss , Dario Gil , Dario Goldfarb , Steven Holmes , David Horak , Kurt Kimmel , Karen Petrillo , Dmitriy Shneyder
发明人： Daniel Corliss , Dario Gil , Dario Goldfarb , Steven Holmes , David Horak , Kurt Kimmel , Karen Petrillo , Dmitriy Shneyder
IPC分类号： G03F7/20
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/162
摘要： A method of forming an image in a photoresist layer. The method includes, providing a substrate; forming the photoresist layer over the substrate; forming a contamination gettering topcoat layer over the photoresist layer, the contamination gettering topcoat layer including one or more polymers and one or more cation complexing agents; exposing the photoresist layer to actinic radiation through a photomask having opaque and clear regions, the opaque regions blocking the actinic radiation and the clear regions being transparent to the actinic radiation, the actinic radiation changing the chemical composition of regions of the photoresist layer exposed to the radiation forming exposed and unexposed regions in the photoresist layer; and removing either the exposed regions of the photoresist layer or the unexposed regions of the photoresist layer. The contamination gettering topcoat layer includes one or more polymers, one or more cation complexing agents and a casting solvent.
摘要翻译：在光致抗蚀剂层中形成图像的方法。该方法包括提供基板; 在衬底上形成光致抗蚀剂层; 在光致抗蚀剂层上形成污染吸气顶涂层，吸收顶涂层的污染物包括一种或多种聚合物和一种或多种阳离子络合剂; 将光致抗蚀剂层暴露于通过具有不透明和透明区域的光掩模的光化辐射，不透明区域阻挡光化辐射，透明区域对于光化辐射是透明的，光化辐射改变曝光于光致抗蚀剂层的光致抗蚀剂层的区域的化学组成在光致抗蚀剂层中形成曝光和未曝光区域的辐射; 以及去除光致抗蚀剂层的曝光区域或光致抗蚀剂层的未曝光区域。污染吸附顶涂层包括一种或多种聚合物，一种或多种阳离子络合剂和流延溶剂。

32. 发明申请

US20060160037A1 AUTOMATED SUB-FIELD BLADING FOR LEVELING OPTIMIZATION IN LITHOGRAPHY EXPOSURE TOOL 审中-公开
标题翻译：自动化的子场开采用于平面曝光工具中的优化优化
公开(公告)号：US20060160037A1
公开(公告)日：2006-07-20
申请号：US10905706
申请日：2005-01-18
申请人： Colin Brodsky , Scott Bukofsky , Steven Holmes
发明人： Colin Brodsky , Scott Bukofsky , Steven Holmes
IPC分类号： G03F7/20
CPC分类号： G03F7/70466
摘要： A method of exposing images on a wafer having varying topography during lithographic production of microelectronic devices. The method initially includes determining topography of a wafer, dividing the wafer into two or more separate regions based on the wafer topography, and determining desired focus distance for exposing a desired image on each of the separate regions of the wafer. The method then includes exposing a desired image on one of the regions of the wafer at the desired focus distance while blocking remaining regions and exposing a desired image on another of the regions of the wafer at the desired focus distance while blocking remaining regions. The desired focus distance may be different for each of the separate wafer regions.
摘要翻译：一种在微电子器件的光刻生产期间在具有变化的形貌的晶片上曝光图像的方法。该方法最初包括确定晶片的形貌，基于晶片形貌将晶片分成两个或更多个分离的区域，以及确定用于在晶片的每个分离区域上曝光所需图像的期望焦距。该方法然后包括以期望的聚焦距离在晶片的一个区域上曝光期望的图像，同时阻挡剩余的区域并且以期望的焦距在所需的聚焦距离的另一个区域上曝光期望的图像，同时阻挡剩余的区域。对于每个单独的晶片区域，期望的对焦距离可以是不同的。

33. 发明申请

US20060100467A1 Cycloalkane base oils, cycloalkane-base dielectric liquids made using cycloalkane base oils, and methods of making same 有权
标题翻译：环烷烃基油，使用环烷烃基油制备的环烷烃基介电液体及其制备方法
公开(公告)号：US20060100467A1
公开(公告)日：2006-05-11
申请号：US11153812
申请日：2005-06-15
申请人： Steven Holmes , John Powers , Michael Smith , Abraham Dekraker
发明人： Steven Holmes , John Powers , Michael Smith , Abraham Dekraker
IPC分类号： C10M105/04
CPC分类号： C10M105/04 , C10M2203/1065 , C10N2220/022 , C10N2240/201 , H01B3/22
摘要： Cycloalkane base oil, methods of making cycloalkane base oil, and dielectric liquid comprising cycloalkane base oil, the cycloalkane base oil comprising a quantity of isoparaffins and from 50 wt. % to 70 wt. % cycloalkanes having the formula CnH2n wherein n is from 15 to 30, said quantity of isoparaffins being less than 50 wt. % of said cycloalkane base oil.
摘要翻译：环烷烃基油，制备环烷烃基油的方法和包含环烷烃基油的介电液体，所述环烷烃基油包含一定数量的异链烷烃和50wt。％至70wt。具有式C n H 2n 2n的％环烷烃其中n为15至30，所述异链烷烃的量小于50wt。％的所述环烷烃基础油。

34. 发明申请

US20060100466A1 Cycloalkane base oils, cycloalkane-base dielectric liquids made using cycloalkane base oils, and methods of making same 审中-公开
标题翻译：环烷烃基油，使用环烷烃基油制备的环烷烃基介电液体及其制备方法
公开(公告)号：US20060100466A1
公开(公告)日：2006-05-11
申请号：US10983839
申请日：2004-11-08
申请人： Steven Holmes , John Powers , Michael Smith
发明人： Steven Holmes , John Powers , Michael Smith
IPC分类号： C10M105/04
CPC分类号： C10M105/04 , C10M169/04 , C10M2203/045 , C10M2203/06 , C10M2203/1065 , C10M2205/22 , C10M2207/026 , C10N2220/028 , C10N2230/04 , C10N2230/06 , C10N2230/52 , Y10T428/24901 , Y10T428/25 , Y10T428/31678
摘要： Cycloalkane base oil, methods of making cycloalkane base oil, and dielectric liquid containing such cycloalkane base oil is provided. The cycloalkane base oil contains a quantity of isoparaffins and from 50 wt. % to 70 wt. % cycloalkanes having the formula CnH2n wherein n is from 15 to 30, the quantity of isoparaffins being less than 50 wt. % of said cycloalkane base oil.
摘要翻译：提供了环烷烃基础油，制备环烷烃基础油的方法和含有这种环烷烃基础油的介电液体。环烷烃基油含有一定数量的异链烷烃和50wt。％至70wt。具有式C n H 2n 2n的％环烷烃其中n为15至30，异构烷烃的量小于50wt。％的所述环烷烃基础油。

35. 发明授权

US07035102B2 Apparatus for air cooling of an electronic device 有权
标题翻译：电子设备的空气冷却装置
公开(公告)号：US07035102B2
公开(公告)日：2006-04-25
申请号：US10815488
申请日：2004-03-31
申请人： Steven Holmes , Douglas L. Heirich
发明人： Steven Holmes , Douglas L. Heirich
IPC分类号： H05K7/20
CPC分类号： G06F1/20 , G06F1/206 , G06F1/3203 , Y02D10/16
摘要： An apparatus for air-cooling an electronic device is disclosed. A contoured panel channels a flow of air within the housing of an electronic device so as to channel the flow of air more directly over heat producing elements such as the microprocessor and peripheral cards. A sensor can also be employed to determine whether the panel is present and properly placed. If not, measures can be taken to reduce the heat generated by the heat producing elements. For example, a warning can be displayed, or the microprocessor can be instructed to enter sleep mode.
摘要翻译：公开了一种用于空气冷却电子设备的设备。轮廓面板在电子设备的壳体内引导空气流，以便将空气流更直接地传递到诸如微处理器和外围卡之类的制热元件上。还可以使用传感器来确定面板是否存在并被正确放置。如果没有，可以采取措施来减少由发热元件产生的热量。例如，可以显示警告，或者可以指示微处理器进入睡眠模式。

36. 发明申请

US20050202322A1 Methods of forming alternating phase shift masks having improved phase-shift tolerance 失效
标题翻译：形成具有改进的相移公差的交替相移掩模的方法
公开(公告)号：US20050202322A1
公开(公告)日：2005-09-15
申请号：US10798908
申请日：2004-03-11
申请人： Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger , Peter Mitchell , Larry Nesbit
发明人： Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger , Peter Mitchell , Larry Nesbit
IPC分类号： G03C5/00 , G03F1/00 , G03F9/00
CPC分类号： G03F1/30
摘要： Methods for fabricating alternating phase shift masks or reticles used in semiconductor optical lithography systems. The methods generally include forming a layer of phase shift mask material on a handle substrate and patterning the layer to define recessed phase shift windows. The patterned layer is transferred from the handle wafer to a mask blank. The depth of the phase shift windows is determined by the thickness of the layer of phase shift mask material and is independent of the patterning process. In particular, the depth of the phase shift windows is not dependent upon the etch rate uniformity of an etch process across a surface of a mask blank.
摘要翻译：用于制造用于半导体光刻系统中的交替相移掩模或掩模版的方法。所述方法通常包括在手柄基板上形成一层相移掩模材料，并且图案化该层以限定凹陷的相移窗口。图案层从手柄晶片转移到掩模板。相移窗口的深度由相移掩模材料层的厚度确定，并且与图案化工艺无关。特别地，相移窗口的深度不依赖于通过掩模板的表面的蚀刻工艺的蚀刻速率均匀性。

37. 发明申请

US20050167740A1 Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage 有权
标题翻译：掺杂半导体纳米管的垂直场效应晶体管在间隔物界定的通道中生长
公开(公告)号：US20050167740A1
公开(公告)日：2005-08-04
申请号：US10767039
申请日：2004-01-29
申请人： Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Peter Mitchell , Larry Nesbit
发明人： Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Peter Mitchell , Larry Nesbit
IPC分类号： H01L21/78 , H01L27/28 , H01L51/30 , H01L27/108
CPC分类号： H01L27/283 , B82Y10/00 , H01L51/0048 , H01L51/057 , Y10S977/70 , Y10S977/707 , Y10S977/721 , Y10S977/724
摘要： Vertical field effect transistors having a channel region defined by at least one semiconducting nanotube and methods for fabricating such vertical field effect transistors by chemical vapor deposition using a spacer-defined channel. Each nanotube is grown by chemical vapor deposition catalyzed by a catalyst pad positioned at the base of a high-aspect-ratio passage defined between a spacer and a gate electrode. Each nanotube grows in the passage with a vertical orientation constrained by the confining presence of the spacer. A gap may be provided in the base of the spacer remote from the mouth of the passage. Reactants flowing through the gap to the catalyst pad participate in nanotube growth.
摘要翻译：具有由至少一个半导体纳米管限定的沟道区的垂直场效应晶体管以及通过使用间隔物定义的沟道的化学气相沉积来制造这种垂直场效应晶体管的方法。每个纳米管通过化学气相沉积来生长，该催化剂垫位于位于间隔物和栅电极之间限定的高纵横比通道的基部处的催化剂垫。每个纳米管在通道中生长，其中垂直取向受限于间隔物的限制。可以在远离通道的口的间隔件的基部中设置间隙。通过间隙流过催化剂垫的反应物参与纳米管生长。

38. 发明申请

US20050149651A1 Port adapter for high-bandwidth bus 有权
标题翻译：用于高带宽总线的端口适配器
公开(公告)号：US20050149651A1
公开(公告)日：2005-07-07
申请号：US10680842
申请日：2003-10-06
申请人： David Doak , Garry Epps , Guy Fedorkow , Mark Gustlin , Steven Holmes , Randall Johnson , Promode Nedungadi , John Prokopik , Mohammed Tatar , Michael Taylor
发明人： David Doak , Garry Epps , Guy Fedorkow , Mark Gustlin , Steven Holmes , Randall Johnson , Promode Nedungadi , John Prokopik , Mohammed Tatar , Michael Taylor
IPC分类号： G06F3/00 , G06F13/38 , G06F13/40 , H04L12/28
CPC分类号： H04L12/5692 , G06F13/387 , H04J3/1617 , Y10S370/912
摘要： A port adapter for connecting zero or more network interfaces to a host system having a SPI-4 bus is disclosed. The port adapter comprises zero or more network interfaces; a SPI-4 bus coupled to a host system to provide a communication channel between the host and the network interfaces; a control bus coupled to the host system for controlling and monitoring the port adapter; and interface logic that interfaces the SPI-4 bus and the control bus to the network interfaces. Methods are provided for selecting and using one of a small plurality of different packet formats for various networking technologies, so that the port adapter can hide details of the technology that it handles from the host system, and for operating the host system's SPI-4 bus at one of several speeds based on bandwidth requirements of the port adapter.
摘要翻译：公开了一种用于将零个或多个网络接口连接到具有SPI-4总线的主机系统的端口适配器。端口适配器包括零个或多个网络接口; 耦合到主机系统的SPI-4总线以在主机和网络接口之间提供通信信道; 耦合到所述主机系统的用于控制和监视所述端口适配器的控制总线; 以及将SPI-4总线和控制总线连接到网络接口的接口逻辑。提供了用于选择和使用用于各种联网技术的小的多种不同分组格式之一的方法，使得端口适配器可以隐藏其从主机系统处理的技术的细节，并且用于操作主机系统的SPI-4总线基于端口适配器的带宽要求，以几种速度之一。

39. 发明申请

US20050148144A1 Selective post-doping of gate structures by means of selective oxide growth 失效
标题翻译：通过选择性氧化物生长选择性地掺杂栅极结构
公开(公告)号：US20050148144A1
公开(公告)日：2005-07-07
申请号：US10732657
申请日：2003-12-10
申请人： Anthony Chou , Toshiharu Furukawa , Steven Holmes
发明人： Anthony Chou , Toshiharu Furukawa , Steven Holmes
IPC分类号： H01L21/266 , H01L21/316 , H01L21/336 , H01L21/8238 , H01L29/78
CPC分类号： H01L29/6659 , H01L21/02131 , H01L21/02164 , H01L21/02282 , H01L21/02304 , H01L21/266 , H01L21/316 , H01L21/31612 , H01L21/823814 , H01L21/823842 , H01L21/823864 , H01L29/665 , H01L29/6656 , H01L29/7833
摘要： A method for doping a polysilicon gate conductor, without implanting the substrate in a manner that would effect source/drain formation is provided. The inventive method comprises forming at least one polysilicon gate region atop a substrate; forming oxide seed spacers abutting the polysilicon gate; forming source/drain oxide spacers selectively deposited on the oxide seed spacers by liquid phase deposition, and implanting at least one polysilicon gate region, wherein the source/drain oxide spacers protect an underlying portion of the substrate. Multiple gate regions may be processed on a single substrate using conventional patterning. A block-mask provided by patterned photoresist can be used prior to implantation to pre-select the substrate area for gate conductor doping with one dopant type.
摘要翻译：提供了掺杂多晶硅栅极导体而不以将影响源极/漏极形成的方式植入衬底的方法。本发明的方法包括在基板顶上形成至少一个多晶硅栅极区域; 形成邻接所述多晶硅栅极的氧化物种子间隔物; 通过液相沉积选择性地沉积在氧化物种间隔物上的源极/漏极氧化物间隔区，以及注入至少一个多晶硅栅极区域，其中源极/漏极氧化物间隔物保护衬底的下面部分。可以使用常规图案化在单个基板上处理多个栅极区域。在植入之前可以使用由图案化的光致抗蚀剂提供的块掩模，以预先选择用于掺杂一种掺杂剂类型的栅极导体的衬底区域。

40. 发明申请

US20050129948A1 Methods and structures for promoting stable synthesis of carbon nanotubes 有权
标题翻译：促进碳纳米管稳定合成的方法和结构
公开(公告)号：US20050129948A1
公开(公告)日：2005-06-16
申请号：US10733974
申请日：2003-12-11
申请人： Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Hotak , Charles Koburger , Peter Mitchell , Larry Nesbit
发明人： Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Hotak , Charles Koburger , Peter Mitchell , Larry Nesbit
IPC分类号： C01B31/02 , B32B9/00 , B82B3/00 , C01B31/00 , H01J1/304 , H01J9/02 , H01L29/04
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , C01B32/162 , C01B2202/06 , C01B2202/22 , C01B2202/34 , H01J1/3044 , H01J2201/30469 , Y10S977/742 , Y10S977/84 , Y10S977/842 , Y10S977/843 , Y10T428/30
摘要： A method for synthesizing carbon nanotubes and structure formed thereby. The method includes forming carbon nanotubes on a plurality of synthesis sites supported by a first substrate, interrupting nanotube synthesis, mounting a free end of each carbon nanotube to a second substrate, and removing the first substrate. Each carbon nanotube is capped by one of the synthesis sites, to which growth reactants have ready access. As the carbon nanotubes lengthen during resumed nanotube synthesis, access to the synthesis sites remains unoccluded.
摘要翻译：一种合成碳纳米管的方法及由此形成的结构。该方法包括在由第一基板支撑的多个合成位置上形成碳纳米管，中断纳米管合成，将每个碳纳米管的自由端安装到第二基板上，以及去除第一基板。每个碳纳米管被其中一个合成位点封盖，生长反应物可以随时进入。由于碳纳米管在恢复纳米管合成过程中延长，所以进入合成位点仍未被排除。

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