专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20050224816A1 Nitride based semiconductor having improved external quantum efficiency and fabrication method thereof 审中-公开
标题翻译：具有改进的外部量子效率的氮化物基半导体及其制造方法
公开(公告)号：US20050224816A1
公开(公告)日：2005-10-13
申请号：US10873239
申请日：2004-06-23
申请人： Sun Kim , Jeong Oh , Kyu Lee , Je Kim
发明人： Sun Kim , Jeong Oh , Kyu Lee , Je Kim
IPC分类号： H01L27/15 , H01L33/22 , H01L33/32
CPC分类号： H01L33/32 , H01L33/22
摘要： A surface treated nitride semiconductor in use for a light emitting diode, in which an n-cladding layer is formed on a substrate. An active layer having a multiple quantum well structure is formed on the n-cladding layer. A p-cladding layer is formed on the active layer. A p-capping layer is formed on the p-cladding layer in a low temperature range in which single crystal growth does not take place. The p-capping layer has a nanoscale roughened structure formed in an upper surface thereof via heat treatment in a high temperature range in which at least partial crystallization takes place. The nanoscale roughened structure reduces total internal reflection of the nitride semiconductor thereby improving external quantum efficiency thereof.
摘要翻译：用于发光二极管的表面处理氮化物半导体，其中在基板上形成n包层。在n包层上形成具有多量子阱结构的有源层。在活性层上形成p-p层。 p型覆盖层在不发生单晶生长的低温范围内形成在p型覆层上。 p覆盖层具有通过在至少发生部分结晶的高温范围内的热处理而在其上表面形成的纳米级粗糙结构。纳米级粗糙结构减少氮化物半导体的全内反射，从而提高其外部量子效率。

32. 发明申请

US20050139818A1 Gallium nitride semiconductor light emitting device and method of manufacturing the same 审中-公开
标题翻译：氮化镓半导体发光器件及其制造方法
公开(公告)号：US20050139818A1
公开(公告)日：2005-06-30
申请号：US10843594
申请日：2004-05-12
申请人： Jae Lee , Jung Lee , Je Kim
发明人： Jae Lee , Jung Lee , Je Kim
IPC分类号： H01L21/00 , H01L21/20 , H01L21/205 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/12
摘要： Disclosed herein are a gallium nitride semiconductor LED (light emitting device) and a method of manufacturing the same, which reduces defects, such as Ga vacancies and dislocations caused by lattice mismatching, with Al doping, so that electrical and an optical properties are enhanced. The gallium nitride semiconductor LED comprises a substrate for growing a GaN semiconductor material, an n-type GaN clad layer formed on the substrate and doped with Al, an active layer having a quantum well structure formed on the n-type GaN clad layer, and a p-type GaN clad layer formed on the active layer. By the above method, good quality crystal growth is ensured with a low cost and the GaN semiconductor LED of excellent electrical and optical properties is provided.
摘要翻译：本文公开了一种氮化镓半导体LED（发光器件）及其制造方法，其通过Al掺杂减少诸如Ga空位和由晶格失配引起的位错的缺陷，从而提高了电学和光学性能。氮化镓半导体LED包括用于生长GaN半导体材料的衬底，在衬底上形成并掺杂有Al的n型GaN覆层，在n型GaN覆层上形成有量子阱结构的有源层，以及形成在有源层上的p型GaN覆层。通过上述方法，以低成本确保了优质的晶体生长，并且提供了优异的电气和光学特性的GaN半导体LED。

33. 发明申请

US20080001138A1 NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US20080001138A1
公开(公告)日：2008-01-03
申请号：US11380415
申请日：2006-04-26
申请人： Je Kim , Jeong Oh , Dong Kim , Sun Kim , Jin Park , Kyu Lee
发明人： Je Kim , Jeong Oh , Dong Kim , Sun Kim , Jin Park , Kyu Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0
摘要翻译：本文公开了一种氮化物基半导体发光器件。氮化物系半导体发光元件包括由n型Al x In 1（1-x1-y1）构成的n型覆盖层， N（其中0 <= X 1 <= 1，0 <= Y 1 <= 1，AND 0 <= X 1 1-y2 N（其中0 <= Y2-2 <1）和由p型Al < （1-x3-y3）N（其中0

34. 发明申请

US20070047878A1 Optical module and optical module package 有权
标题翻译：光模块和光模块封装
公开(公告)号：US20070047878A1
公开(公告)日：2007-03-01
申请号：US11450743
申请日：2006-06-08
申请人： Kwang Choi , Yong Chung , Young Kang , Dong Jun , Je Kim , Jong Moon
发明人： Kwang Choi , Yong Chung , Young Kang , Dong Jun , Je Kim , Jong Moon
IPC分类号： G02B6/36 , G02B6/12
CPC分类号： G02F1/0121 , G02B6/4201 , G02B6/4279 , H01L2224/48091 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： Provided is an optical module used in a communication system employing a radio over fiber (ROF) technology delivering a radio frequency (RF) signal through an optical fiber. The optical module includes: an optical device; a signal line for transporting a radio frequency (RF) signal input from an external circuit to the optical device; and a resistor separately disposed from the signal line and having one end connected with the optical device, wherein the input impedance seen from the signal line is matched by the resistor. A bias voltage supplied to operate the optical device is applied through an inductor connected to the signal line between the optical device and a filter. Here, the filter formed by a pattern of the signal line prevents the bias voltage from being supplied to the external circuit. In order to amplify the RF signal input from the external circuit, an amplifier may be connected between the external circuit and the filter.
摘要翻译：提供了一种用于通过光纤传送射频（RF）信号的无线电光纤（ROF）技术的通信系统中的光学模块。光学模块包括：光学装置; 用于将从外部电路输入的射频（RF）信号传送到光学装置的信号线; 以及与信号线分开设置并且具有与光学装置连接的一端的电阻，其中从信号线看到的输入阻抗由电阻器匹配。提供用于操作光学器件的偏置电压通过连接到光学器件和滤光器之间的信号线的电感器施加。这里，由信号线的图案形成的滤波器防止偏置电压被提供给外部电路。为了放大从外部电路输入的RF信号，可以在外部电路和滤波器之间连接放大器。

35. 发明申请

US20060261358A1 Flip chip light emitting diode and method of manufacturing the same 审中-公开
标题翻译：倒装芯片发光二极管及其制造方法
公开(公告)号：US20060261358A1
公开(公告)日：2006-11-23
申请号：US11414362
申请日：2006-05-01
申请人： Seok Hwang , Je Kim , Young Park , Min Kim , Hyo-Kyoung Cho , Kun Ko , Bok Min
发明人： Seok Hwang , Je Kim , Young Park , Min Kim , Hyo-Kyoung Cho , Kun Ko , Bok Min
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/382 , H01L33/62 , H01L2224/05001 , H01L2224/05022 , H01L2224/05568 , H01L2224/0557 , H01L2224/05571 , H01L2224/16 , H01L2933/0016
摘要： The present invention relates to a flip chip light emitting diode in which an n-type electrode is formed on an insulating layer so that a large light emitting area can be secured to thereby enhance a current-spreading effect and in which the n-type electrode serves as a light reflecting layer so that light is prevented from being transmitted into the rear surface to thereby enhance light emission efficiency. The flip chip light emitting diode includes an optically-transparent substrate; a light emitting substrate that is formed by sequentially laminating an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer on the substrate and that includes mesas which are formed by etching the active layer and the p-type nitride semiconductor layer into a predetermined width so that a plurality of regions of the n-type nitride semiconductor layer are exposed; a plurality of p-type electrodes that are formed on the p-type nitride semiconductor layer of the light emitting structure; an insulating layer that is formed on the surface of the light emitting structure from a portion of the plurality of p-type electrodes to a portion of the n-type nitride semiconductor layer of the mesa; and an n-type electrode that is formed across the insulating layer and the mesa and comes in contact with the exposed n-type nitride semiconductor layer of the mesa.
摘要翻译：本发明涉及一种倒装芯片发光二极管，其中在绝缘层上形成n型电极，从而可以确保大的发光区域，从而提高电流扩散效应，其中n型电极作为光反射层，防止光被透射到后表面，从而提高发光效率。倒装芯片发光二极管包括光学透明基板; 通过在衬底上顺序地层叠n型氮化物半导体层，有源层，p型氮化物半导体层，并且包括通过蚀刻有源层和p型氮化物形成的台面而形成的发光衬底半导体层形成预定宽度，以使n型氮化物半导体层的多个区域露出; 多个p型电极，形成在发光结构的p型氮化物半导体层上; 在所述发光结构的表面上形成从所述多个p型电极的一部分到所述台面的n型氮化物半导体层的一部分的绝缘层，以及形成在绝缘层和台面两侧并与台面的暴露的n型氮化物半导体层接触的n型电极。

36. 发明申请

US20060226416A1 Nitride semiconductor device 审中-公开
标题翻译：氮化物半导体器件
公开(公告)号：US20060226416A1
公开(公告)日：2006-10-12
申请号：US11332688
申请日：2006-01-13
申请人： Kyu Lee , Je Kim , Dong Kim
发明人： Kyu Lee , Je Kim , Dong Kim
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06 , H01S5/2004 , H01S5/3095 , H01S5/3412 , H01S5/34333
摘要： The invention relates to a nitride semiconductor device having electron-emitting. In the device, an n-type nitride semiconductor layer is formed over a substrate, and an active layer is formed over the n-type nitride semiconductor layer. Also, a p-type nitride semiconductor layer is formed on the active layer. The active layer is formed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer and includes a quantum well layer and a quantum barrier layer. Further, an electron-emitting layer is formed between the n-type nitride semiconductor layer and the active layer. The electron-emitting layer includes a nitride semiconductor quantum dot layer formed on the n-type nitride semiconductor layer and having a composition expressed by AlXInyGa1-X-y)N, where 0≦x≦1 and 0≦y≦1, and a resonance tunnel layer formed on the nitride semiconductor quantum dot layer and having energy band gap bigger than that of adjacent quantum dot layer.
摘要翻译：本发明涉及具有电子发射的氮化物半导体器件。在器件中，在衬底上形成n型氮化物半导体层，并且在n型氮化物半导体层上形成有源层。此外，在有源层上形成p型氮化物半导体层。有源层形成在p型氮化物半导体层和n型氮化物半导体层之间，包括量子阱层和量子势垒层。此外，在n型氮化物半导体层和有源层之间形成电子发射层。电子发射层包括形成在n型氮化物半导体层上的氮化物半导体量子点层，并且具有由Al x In 1 Y 1 Ga -Xy）N，其中0 <= x <= 1且0 <= y <= 1，以及形成在氮化物半导体量子点层上并具有大于相邻量子能带隙的能带隙的谐振隧道层点层。

37. 发明申请

US20050285125A1 Nitride based semiconductor device 有权
标题翻译：氮化物基半导体器件
公开(公告)号：US20050285125A1
公开(公告)日：2005-12-29
申请号：US10939361
申请日：2004-09-14
申请人： Sun Kim , Jeong Oh , Je Kim
发明人： Sun Kim , Jeong Oh , Je Kim
IPC分类号： H01L29/22 , H01L33/02 , H01L33/06 , H01L33/32
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06
摘要： The present invention provides a nitride semiconductor device comprising an active layer of a quantum well structure, a first conductive clad layer and a second conductive clad layer. The first conductive clad layer is made of the quaternary nitride semiconductor InAlGaN having a lattice constant equal to or larger than that of the active layer and includes a first nitride semiconductor layer having an energy band gap larger than that of the active layer, a second nitride semiconductor layer having an energy band gap smaller than that of the first nitride semiconductor layer and a third nitride semiconductor layer having an energy band gap larger than that of the second nitride semiconductor layer, sequentially closer to the active layer.
摘要翻译：本发明提供一种氮化物半导体器件，其包括量子阱结构的有源层，第一导电覆层和第二导电覆层。第一导电覆层由具有等于或大于有源层的晶格常数的四氮化硅半导体InAlGaN制成，并且包括具有比有源层大的能带隙的第一氮化物半导体层，第二氮化物具有比第一氮化物半导体层的能带隙小的能带隙的半导体层和具有比第二氮化物半导体层的能带隙大的能带隙的第三氮化物半导体层，依次更靠近有源层。

38. 发明申请

US20070284593A1 Nitride-based semiconductor light emitting diode 审中-公开
标题翻译：氮化物半导体发光二极管
公开(公告)号：US20070284593A1
公开(公告)日：2007-12-13
申请号：US11798677
申请日：2007-05-16
申请人： Kun Ko , Bang Oh , Seok Hwang , Je Kim , Hyung Park , Dong Kim
发明人： Kun Ko , Bang Oh , Seok Hwang , Je Kim , Hyung Park , Dong Kim
IPC分类号： H01L33/00 , H01L31/12 , H01L27/15 , H01L29/26
CPC分类号： H01L33/38 , H01L33/20
摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer, the p-electrode having a p-type branch electrode; a p-type ESD pad formed at the end of the p-type branch electrode, the p-type ESD pad having a larger width than the end of the p-type branch electrode; an n-electrode formed on the n-type nitride semiconductor layer, on which the active layer is not formed, the n-electrode having an n-type branch electrode; and an n-type ESD pad formed at the end of the n-type branch electrode, the n-type ESD pad having a larger width than the end of the n-type branch electrode.
摘要翻译：氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的p电极，p电极具有p型分支电极; 形成在p型分支电极的端部的p型ESD焊盘，p型ESD焊盘的宽度大于p型分支电极的端部; 形成在其上没有形成有源层的n型氮化物半导体层上的n电极，具有n型分支电极的n电极; 以及形成在n型分支电极的端部的n型ESD焊盘，该n型ESD焊盘的宽度大于n型分支电极的端部。

39. 发明申请

US20070096143A1 Nitride semiconductor light emitting device and method for manufacturing the same 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20070096143A1
公开(公告)日：2007-05-03
申请号：US11517337
申请日：2006-09-08
申请人： Sun Kim , Je Kim , Pil Kang , Keun Song
发明人： Sun Kim , Je Kim , Pil Kang , Keun Song
IPC分类号： H01L33/00 , H01L29/24
CPC分类号： H01L33/42 , H01L33/32
摘要： The invention relates to a nitride semiconductor light emitting device having a high light emission efficiency, low operating voltage and high resistance to electrostatic discharge. The nitride semiconductor light emitting device includes an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer formed in their order on a substrate. The device also includes a transparent conductive oxide multi-layer formed on the p-type nitride semiconductor layer. The transparent conductive oxide multi-layer includes two or more layers or transparent conductive oxide layers having different levels of conductivity.
摘要翻译：本发明涉及一种具有高发光效率，低工作电压和高抗静电放电性能的氮化物半导体发光器件。氮化物半导体发光器件包括在衬底上依次形成的n型氮化物半导体层，有源层和p型氮化物半导体层。该器件还包括在p型氮化物半导体层上形成的透明导电氧化物多层。透明导电氧化物多层包括具有不同导电性水平的两层或更多层或透明导电氧化物层。

40. 发明申请

US20070012939A1 Flip chip light emitting diode and method of manufacturing the same 审中-公开
标题翻译：倒装芯片发光二极管及其制造方法
公开(公告)号：US20070012939A1
公开(公告)日：2007-01-18
申请号：US11412984
申请日：2006-04-28
申请人： Seok Hwang , Je Kim , Young Park , Kun Ko , Jee Kim , Jung Park , Bok Min
发明人： Seok Hwang , Je Kim , Young Park , Kun Ko , Jee Kim , Jung Park , Bok Min
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/08 , H01L33/32 , H01L33/38 , H01L2933/0016
摘要： The present invention relates to a flip chip light emitting diode, in which the flow of current concentrated on a portion adjacent to an n-type electrode can be induced into the center of a light emitting section and a current-spreading effect is accordingly enhanced, thereby increasing light emission efficiency of a light emitting diode chip, and a method of manufacturing the same. The method of manufacturing a flip chip light emitting diode includes sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on an optically-transparent substrate; etching predetermined regions of the active layer and p-type nitride semiconductor layer and exposing a plurality of regions of the n-type nitride semiconductor layer so as to form a plurality of mesas; etching predetermined regions of the active layer and p-type nitride semiconductor layer positioned between the formed mesas and exposing the plurality of regions of the n-type nitride semiconductor layer so as to form a plurality of grooves; forming an insulating layer on the surface of the groove; forming a p-type electrode across the insulating layer formed on the upper portion of the p-type nitride semiconductor layer and the surface of the groove; and forming an n-type electrode on the formed mesa.
摘要翻译：倒装芯片发光二极管技术领域本发明涉及一种倒装芯片发光二极管，其中集中在与n型电极相邻的部分上的电流可以被感应到发光部分的中心，从而相应地提高了电流扩展效果，从而提高发光二极管芯片的发光效率及其制造方法。制造倒装芯片发光二极管的方法包括在光学透明基板上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层; 蚀刻有源层和p型氮化物半导体层的预定区域，并露出n型氮化物半导体层的多个区域以形成多个台面; 蚀刻位于形成的台面之间的有源层和p型氮化物半导体层的预定区域，并暴露出n型氮化物半导体层的多个区域以形成多个沟槽; 在所述槽的表面上形成绝缘层; 在形成在p型氮化物半导体层的上部和沟槽的表面上的绝缘层上形成p型电极; 并在形成的台面上形成n型电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式