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31. 发明授权

US5811863A Transistors having dynamically adjustable characteristics 失效
标题翻译：具有动态可调特性的晶体管
公开(公告)号：US5811863A
公开(公告)日：1998-09-22
申请号：US517463
申请日：1995-08-21
申请人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashook K. Kapoor , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
发明人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashook K. Kapoor , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
IPC分类号： G06F17/50 , G11C5/02 , G11C5/06 , H01L23/522 , H01L23/528 , H01L27/02 , H01L27/092 , H01L27/108 , H01L27/11 , H01L27/118 , H01L29/06 , H03K19/0944 , H03K19/0948 , H01L29/78 , H01L29/41
CPC分类号： G06F17/5072 , G06F17/5077 , G11C5/025 , G11C5/063 , H01L23/5222 , H01L23/528 , H01L27/0207 , H01L27/0922 , H01L27/108 , H01L27/11 , H01L27/1104 , H01L27/11807 , H03K19/09441 , H03K19/0948 , H01L29/0657 , H01L2924/0002
摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.
摘要翻译：披露了几个发明。公开了一种使用六角形电池的电池结构。该体系结构不限于六角形细胞。单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。公开了多向非正交三层金属布线。该架构可以与三向路由组合以用于特别有利的设计。在三向布线布置中，集成电路的微电子单元的互连端的电导体优选地在三个方向上相互延伸60°。沿三个方向延伸的导体优选地以三个不同的层形成。公开了一种使半导体器件中的导线长度最小化的方法。公开了一种使半导体器件中的金属间电容最小化的方法。公开了一种称为“三元器件”的新型器件。公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。公开了三角形运算放大器和三极管。公开了三角形读出放大器。公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。公开了一种可编程可变驱动晶体管。公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

32. 发明授权

US5801422A Hexagonal SRAM architecture 失效
标题翻译：六角SRAM架构
公开(公告)号：US5801422A
公开(公告)日：1998-09-01
申请号：US517266
申请日：1995-08-21
申请人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
发明人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
IPC分类号： G06F17/50 , G11C5/02 , G11C5/06 , H01L23/522 , H01L23/528 , H01L27/02 , H01L27/092 , H01L27/108 , H01L27/11 , H01L27/118 , H01L29/06 , H03K19/0944 , H03K19/0948 , H01L29/78
CPC分类号： G06F17/5072 , G06F17/5077 , G11C5/025 , G11C5/063 , H01L23/5222 , H01L23/528 , H01L27/0207 , H01L27/0922 , H01L27/108 , H01L27/11 , H01L27/1104 , H01L27/11807 , H03K19/09441 , H03K19/0948 , H01L29/0657 , H01L2924/0002
摘要： Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.
摘要翻译：披露了几个发明。公开了一种使用六角形电池的电池结构。该体系结构不限于六角形细胞。单元可以由两个或更多个六边形的簇，通过三角形，平行四边形以及能够容纳各种单元格形状的其他多边形来定义。公开了多向非正交三层金属布线。该架构可以与三向路由组合以用于特别有利的设计。在三向布线布置中，集成电路的微电子单元的互连端的电导体优选地在三个方向上相互延伸60°。沿三个方向延伸的导体优选地以三个不同的层形成。公开了一种使半导体器件中的导线长度最小化的方法。公开了一种使半导体器件中的金属间电容最小化的方法。公开了一种称为“三元器件”的新型器件。公开了三角形器件，包括三角形与非门，三角形与门和三角形或门。公开了三角形运算放大器和三极管。公开了三角形读出放大器。公开了一种基于三角形或平行四边形形状的单元的DRAM存储器阵列和SRAM存储器阵列，其包括互连这种阵列的方法。公开了一种可编程可变驱动晶体管。公开了用于设计和制造半导体器件的CAD算法和方法，其特别适用于所公开的架构和三向三金属层布线。

33. 发明授权

US5631581A Microelectronic integrated circuit including triangular semiconductor "and" gate device 失效
标题翻译：微电子集成电路包括三角半导体“和”门极器件“
公开(公告)号：US5631581A
公开(公告)日：1997-05-20
申请号：US567952
申请日：1995-12-06
申请人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
发明人： Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
IPC分类号： H01L27/02 , H01L27/118 , H03K19/08 , H03K17/093
CPC分类号： H01L27/11803 , H01L27/0207 , H03K19/08
摘要： A microelectronic integrated circuit includes a semiconductor substrate, and a plurality of microelectronic devices formed on the substrate. Each device has a periphery defined by a triangle, and includes an active area formed within the periphery. First and second terminals are formed in the active area adjacent to two vertices of the triangle respectively, and first to third gates are formed between the first and second terminals. The gates have contacts formed outside the active area adjacent to a side of the triangle between the two vertices. The power supply connections to the first and second terminals, the conductivity type (NMOS or PMOS), and the addition of a pull-up or a pull-down resistor are selected for each device to provide a desired AND, NAND, OR or NOR function. A third terminal can be formed between two of the gates and used as an output terminal to provide an AND/OR logic function. The devices are interconnected using three direction routing based on hexagonal geometry.
摘要翻译：微电子集成电路包括半导体衬底和形成在衬底上的多个微电子器件。每个装置具有由三角形限定的周边，并且包括形成在周边内的有效区域。第一和第二端子分别形成在与三角形的两个顶点相邻的有源区域中，并且在第一和第二端子之间形成第一至第三栅极。门形成在与两个顶点之间的三角形的一侧相邻的有源区域的外侧。为每个器件选择与第一和第二端子的电源连接，导电类型（NMOS或PMOS）以及上拉或下拉电阻的添加，以提供所需的AND，NAND，或或NOR 功能。可以在两个栅极之间形成第三端子，并且用作输出端子以提供与/或逻辑功能。这些设备使用基于六边形几何的三向路由进行互连。

34. 发明授权

US5784287A Physical design automation system and process for designing integrated circuit chips using generalized assignment 失效
标题翻译：物理设计自动化系统和使用广义分配设计集成电路芯片的过程
公开(公告)号：US5784287A
公开(公告)日：1998-07-21
申请号：US536004
申请日：1995-09-29
申请人： Ranko Scepanovic , James S. Koford , Edwin R. Jones , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
发明人： Ranko Scepanovic , James S. Koford , Edwin R. Jones , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
IPC分类号： G06F17/50
CPC分类号： G06F17/5072
摘要： A process for designing an integrated circuit chip s comprises specifying a plurality of regions on the chip in which a plurality of objects are to be placed, such that there are more of the objects than the regions, and specifying penalties for the objects to be placed in the regions respectively. The objects can be microelectronic cells, interconnect wiring segments, etc. An assignment of the objects to the regions is constructed, and a number of objects for movement between the regions is selected. An optimal permutation of movement of the selected number of objects between the regions is computed such that a cost corresponding to the total penalties for the assignment is maximally reduced, and the assignment is modified by moving the selected number of objects through the optimal permutation. The process steps are repeated iteratively such that a maximum number of objects which will produce a maximal reduction in cost is moved during each iteration. The optimal permutation is determined by computing penalty changes for moving the objects between the regions respectively, defining a penalty change scale having a plurality of subintervals, assigning the objects to the penalty change scale in accordance with their penalty changes, and moving the objects which have penalty changes in a number of subintervals having largest values of negative penalty change.
摘要翻译：设计集成电路芯片的过程包括在芯片上指定多个对象要放置的多个区域，使得存在比区域更多的对象，并且指定要放置的对象的处罚分别在区域。物体可以是微电子单元，互连布线段等。构造对象到区域的分配，并且选择用于在区域之间移动的多个对象。计算在区域之间所选择的对象数量的移动的最佳排列，使得对应于分配的总惩罚的成本被最大程度地减少，并且通过移动所选择的对象数量通过最优排列来修改分配。迭代地重复处理步骤，使得在每次迭代期间移动将产生最大成本降低的最大数量的对象。通过计算用于在区域之间移动对象的惩罚变化来确定最优排列，定义具有多个子区间的惩罚改变量表，根据其惩罚改变将对象分配给惩罚改变量表，以及移动具有在具有最大值的负惩罚变化的多个子区间中的惩罚变化。

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