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31. 发明授权

US06946066B2 Multi step electrodeposition process for reducing defects and minimizing film thickness 有权
标题翻译：多步电沉积工艺可减少缺陷并最大限度地减小膜厚
公开(公告)号：US06946066B2
公开(公告)日：2005-09-20
申请号：US10201604
申请日：2002-07-22
申请人： Bulent M. Basol , Cyprian E. Uzoh , Homayoun Talieh
发明人： Bulent M. Basol , Cyprian E. Uzoh , Homayoun Talieh
IPC分类号： C25D5/02 , C25D5/22 , C25D7/12 , H01L21/288 , H01L21/768 , C25D5/00 , C25D5/06 , C25D5/48 , H01L21/44
CPC分类号： C25D5/02 , C25D5/22 , C25D7/123 , H01L21/2885 , H01L21/7684 , H01L21/76877
摘要： The present invention relates to a method for forming a planar conductive surface on a wafer. In one aspect, the present invention uses a no-contact process with electrochemical deposition, followed by a contact process with electrochemical mechanical deposition.
摘要翻译：本发明涉及一种在晶片上形成平面导电表面的方法。一方面，本发明使用具有电化学沉积的无接触方法，接着进行电化学机械沉积的接触过程。

32. 发明授权

US06932896B2 Method and apparatus for avoiding particle accumulation in electrodeposition 有权
标题翻译：用于避免电沉积中的颗粒积聚的方法和装置
公开(公告)号：US06932896B2
公开(公告)日：2005-08-23
申请号：US09982558
申请日：2001-10-17
申请人： Bulent M. Basol , Cyprian Uzoh , Homayoun Talieh
发明人： Bulent M. Basol , Cyprian Uzoh , Homayoun Talieh
IPC分类号： B08B1/04 , B24B37/04 , B24B53/00 , B24B53/007 , C25D5/22 , C25D7/12 , C25F3/16 , H01L21/288 , H01L21/304 , H01L21/768
CPC分类号： B24B53/017 , B24B37/04 , B24B53/001 , C25D5/22 , C25D17/001 , H01L21/2885 , H01L21/7684 , H01L21/76877
摘要： Systems and methods to remove or lessen the size of metal particles that have formed on, and to limit the rate at which metal particles form or grow on, workpiece surface influencing devices used during electrodeposition are presented. According to an exemplary method, the workpiece surface influencing device is occasionally placed in contact with a conditioning substrate coated with an inert material, and the bias applied to the electrodeposition system is reversed. According to another exemplary method, the workpiece surface influencing device is conditioned using mechanical contact members, such as brushes, and conditioning of the workpiece surface influencing device occurs, for example, through physical brushing of the workpiece surface influencing device with the brushes. According to a further exemplary method, the workpiece surface influencing device is rotated in different direction during electrodeposition.
摘要翻译：提出了用于去除或减小在电沉积期间使用的工件表面影响装置上形成金属颗粒的尺寸并限制金属颗粒形成或生长的速率的系统和方法。根据示例性的方法，工件表面影响装置偶尔地与涂覆有惰性材料的调理基板接触，并且施加到电沉积系统的偏压被反转。根据另一示例性方法，使用诸如刷子的机械接触构件对工件表面影响装置进行调节，并且例如通过用刷子物理刷刷工件表面影响装置来发生工件表面影响装置的调节。根据另一示例性方法，在电沉积期间，工件表面影响装置在不同方向上旋转。

33. 发明授权

US06815354B2 Method and structure for thru-mask contact electrodeposition 失效
标题翻译：通过掩模接触电沉积的方法和结构
公开(公告)号：US06815354B2
公开(公告)日：2004-11-09
申请号：US10282976
申请日：2002-10-28
申请人： Cyprian Uzoh , Bulent M. Basol , Homayoun Talieh
发明人： Cyprian Uzoh , Bulent M. Basol , Homayoun Talieh
IPC分类号： H01L2100
CPC分类号： H01L21/7684 , H01L21/76885 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A process for forming a conductive structure on a substrate is provided. The substrate has a copper seed layer that is partially exposed through a plurality of openings in a masking layer such as a photoresist. The masking layer is formed on the seed layer. The process electroplates copper through the openings and onto the seed layer. During the copper electroplating process the surface of the masking layer is mechanically swept. The process forms planar conductive material deposits filling the plurality of holes in the masking layer. The upper ends of the conductive deposits are substantially co-planar.
摘要翻译：提供了在基板上形成导电结构的工艺。衬底具有通过诸如光致抗蚀剂的掩模层中的多个开口部分暴露的铜籽晶层。掩蔽层形成在种子层上。该方法通过开口将铜电镀到种子层上。在铜电镀过程中，屏蔽层的表面被机械扫掠。该过程形成填充掩模层中的多个孔的平面导电材料沉积物。导电沉积物的上端基本上是共面的。

34. 发明授权

US06610190B2 Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate 有权
标题翻译：用于电沉积均匀膜的方法和装置，在基板上具有最小的边缘排除
公开(公告)号：US06610190B2
公开(公告)日：2003-08-26
申请号：US09760757
申请日：2001-01-17
申请人： Bulent M. Basol , Cyprian Uzoh , Homayoun Talieh
发明人： Bulent M. Basol , Cyprian Uzoh , Homayoun Talieh
IPC分类号： C25D508
CPC分类号： C25D5/02 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/3212 , H01L21/76877
摘要： A system for depositing materials on a surface of a wafer or removing materials from the surface of a wafer includes an electrode, a shaping plate, a liquid solution contained between the electrode and the wafer surface, and electrical contact members contacting selected locations on the wafer surface. The shaping plate is supported between the electrode and the wafer surface such that an upper surface of the shaping plate faces the wafer surface. The shaping plate can have a plurality of channels where each puts the wafer surface in a fluid communication with the electrode. The electrical contact members contact the selected locations on the wafer surface through a recessed edge of the shaping plate such that when the wafer is rotated, the selected contact locations move over the shaping plate and are plated under an applied potential. Advantages of the invention include substantially full surface treatment of the wafer.
摘要翻译：用于在晶片的表面上沉积材料或从晶片表面去除材料的系统包括电极，成形板，包含在电极和晶片表面之间的液体溶液以及与晶片上的选定位置接触的电接触元件表面。成形板支撑在电极和晶片表面之间，使得成形板的上表面面向晶片表面。成形板可以具有多个通道，其中每个通道将晶片表面与电极流体连通。电接触构件通过成形板的凹入边缘接触晶片表面上的选定位置，使得当晶片旋转时，所选择的接触位置在成形板上移动并在施加电位下进行电镀。本发明的优点包括晶片的基本全表面处理。

35. 发明授权

US06497800B1 Device providing electrical contact to the surface of a semiconductor workpiece during metal plating 失效
标题翻译：在金属电镀过程中提供与半导体工件的表面的电接触的装置
公开(公告)号：US06497800B1
公开(公告)日：2002-12-24
申请号：US09685934
申请日：2000-10-11
申请人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
发明人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
IPC分类号： C25D1700
CPC分类号： B23H3/04 , B23H5/08 , C25D5/08 , C25D17/00 , C25D17/001 , C25D17/005 , C25F7/00 , H01L21/2885
摘要： Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.
摘要翻译：可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。第一导电元件可以具有相同或不同构造的多个电触点，或者可以是导电焊盘的形式，并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时，导电材料沉积在衬底表面上。可以使施加在阳极和阴极之间的电压的极性反转，从而可以对沉积的导电材料进行电蚀刻。

36. 发明授权

US07648622B2 System and method for electrochemical mechanical polishing 失效
标题翻译：电化学机械抛光的系统和方法
公开(公告)号：US07648622B2
公开(公告)日：2010-01-19
申请号：US11173233
申请日：2005-07-01
申请人： Bulent M. Basol , Homayoun Talieh
发明人： Bulent M. Basol , Homayoun Talieh
IPC分类号： C25F3/22 , B23H5/06
CPC分类号： B23H5/08 , C25F3/02 , C25F7/00
摘要： A method and apparatus for electropolishing a conductive surface of a semiconductor wafer. The apparatus includes a polisher having at least one first electrode and at least one second electrode separated from one another by an isolation region. A moving mechanism rotates the wafer while the conductive surface of the wafer is moved linearly and parallel to a first direction, which varies an exposure of the relative surface areas of the conductive surface to the at least one first electrode and the at least one second electrode.
摘要翻译：一种用于电抛光半导体晶片的导电表面的方法和装置。该设备包括具有至少一个第一电极和通过隔离区彼此分开的至少一个第二电极的抛光机。移动机构使晶片旋转，同时晶片的导电表面线性地并且平行于第一方向移动，这改变了导电表面相对于至少一个第一电极和至少一个第二电极的相对表面积的曝光。

37. 发明授权

US07416975B2 Method of forming contact layers on substrates 有权
标题翻译：在基片上形成接触层的方法
公开(公告)号：US07416975B2
公开(公告)日：2008-08-26
申请号：US11232718
申请日：2005-09-21
申请人： Cyprian E. Uzoh , Bulent M. Basol , Hung-Ming Wang , Homayoun Talieh
发明人： Cyprian E. Uzoh , Bulent M. Basol , Hung-Ming Wang , Homayoun Talieh
IPC分类号： H01L21/44
CPC分类号： H01L21/2885 , C25D5/02 , C25D7/123 , C25D17/005
摘要： A method is provided for manufacturing removable contact structures on the surface of a substrate to conduct electricity from a contact member to the surface during electroprocessing. The method comprises forming a conductive layer on the surface. A predetermined region of the conductive layer is selectively coated by a contact layer so that the contact member touches the contact layer as the electroprocessing is performed on the conductive layer.
摘要翻译：提供了一种用于在基板的表面上制造可移除接触结构以在电加工期间将电从接触构件传导到表面的方法。该方法包括在表面上形成导电层。导电层的预定区域被接触层选择性地涂覆，使得当在导电层上进行电处理时，接触构件接触接触层。

38. 发明授权

US07282124B2 Device providing electrical contact to the surface of a semiconductor workpiece during processing 失效
公开(公告)号：US07282124B2
公开(公告)日：2007-10-16
申请号：US10459320
申请日：2003-06-10
申请人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
发明人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
IPC分类号： C25D17/00
CPC分类号： B23H3/04 , B23H5/08 , C25D5/08 , C25D17/00 , C25D17/001 , C25D17/005 , C25F7/00 , H01L21/2885
摘要： Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

39. 发明授权

US07204924B2 Method and apparatus to deposit layers with uniform properties 有权
标题翻译：沉积具有均匀性质的层的方法和装置
公开(公告)号：US07204924B2
公开(公告)日：2007-04-17
申请号：US10744294
申请日：2003-12-22
申请人： Bulent M. Basol , Homayoun Talieh
发明人： Bulent M. Basol , Homayoun Talieh
IPC分类号： C25D5/00 , C25D5/50 , C25D5/22
CPC分类号： C25D5/22 , B23H5/06 , B24B37/26 , C25D5/02 , C25D5/06 , C25D7/123 , C25F7/00 , H01L21/2885 , H01L21/32125 , H01L21/76877
摘要： The present invention provides a method for forming a conductive film with uniform properties on a wafer surface that has features or cavities. During the process, the workpiece is rotated and laterally moved while an electrodeposition solution is delivered onto the wafer surface at a predetermined flow rate, and a potential difference is applied between the workpiece surface and the electrode. The workpiece is rotated about an axis at predetermined revolutions per minute so that an edge region of the workpiece has a first predetermined linear velocity due to the rotation. The workpiece has a second predetermined linear velocity due to the lateral motion. The second predetermined velocity may be larger than the first predetermined velocity. Further, the wafer may not be rotated.
摘要翻译：本发明提供一种在具有特征或空穴的晶片表面上形成具有均匀性质的导电膜的方法。在该过程中，工件被旋转并横向移动，同时电沉积溶液以预定流速输送到晶片表面上，并且在工件表面和电极之间施加电位差。工件以预定转数每分钟绕轴线旋转，使得工件的边缘区域由于旋转而具有第一预定的线速度。由于横向运动，工件具有第二预定的线速度。第二预定速度可以大于第一预定速度。此外，晶片可能不会旋转。

40. 发明授权

US07204743B2 Integrated circuit interconnect fabrication systems 有权
标题翻译：集成电路互连制造系统
公开(公告)号：US07204743B2
公开(公告)日：2007-04-17
申请号：US10703293
申请日：2003-11-07
申请人： Bulent M. Basol , Homayoun Talieh
发明人： Bulent M. Basol , Homayoun Talieh
IPC分类号： B24B7/22
CPC分类号： H01L21/7684 , B23H5/08 , H01L21/67219
摘要： A system for processing a conductive surface on a front surface of a wafer to form a metallic interconnect structure is disclosed. The system for processing comprises an electrochemical mechanical processing (ECMPR) module configured to form a substantially planarized conductive layer on the front surface of the wafer, a chamber within the ECMPR module configured to remove conductive material from an edge region of the wafer, a CMP module configured to receive the wafer from the ECMPR module and polish the planarized conductive layer on the surface of the wafer to form the metallic interconnect structure, and a robot configured to transfer the wafer from the ECMPR module to the chemical mechanical polish (CMP) module. In one aspect of the invention, the ECMPR module deposits conductive material on the front surface of the wafer. The ECMPR module removes at least a portion of the conductive layer from the front surface of the wafer. Advantages of the invention include improved control of deposited metal to improve device consistency and yield.
摘要翻译：公开了一种用于处理晶片前表面上的导电表面以形成金属互连结构的系统。用于处理的系统包括电化学机械处理（ECMPR）模块，其被配置为在晶片的前表面上形成基本平坦化的导电层，ECMPR模块内的腔室被配置为从晶片的边缘区域去除导电材料，CMP 模块，被配置为从ECMPR模块接收晶片并抛光晶片表面上的平坦化导电层以形成金属互连结构，以及被配置为将晶片从ECMPR模块传送到化学机械抛光（CMP）模块的机器人。在本发明的一个方面，ECMPR模块将导电材料沉积在晶片的前表面上。 ECMPR模块从晶片的前表面去除导电层的至少一部分。本发明的优点包括改善沉积金属的控制以提高器件的一致性和产率。

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