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31. 发明申请

US20130251001A1 Interference Signal Avoiding Device of a Frequency Hopping Spread System and Method Thereof 有权
标题翻译：跳频传播系统的干扰信号避免装置及其方法
公开(公告)号：US20130251001A1
公开(公告)日：2013-09-26
申请号：US13990745
申请日：2011-12-01
申请人： Yong-Hwan Lee , Seung-Hwan Lee , Jin-Seok Han
发明人： Yong-Hwan Lee , Seung-Hwan Lee , Jin-Seok Han
IPC分类号： H04B1/715
CPC分类号： H04B1/715 , H04B2001/7154 , H04W28/18
摘要： An interference signal avoiding device of a frequency hopping spread system and a method thereof are disclosed. A method of transmitting/receiving an interference signal avoiding signal according to the present invention includes: determining a frequency hopping channel set and a parameter of an interference signal detector in consideration of characteristics of an interference signal; detecting whether there is an interference signal with respect to frequency hopping candidate channels that are to be used for the next frequency hopping by using the determined interference signal detector; transmitting a signal through a channel that is determined by the interference signal detector that there is no interference signal among the frequency hopping candidate channels; and searching a channel through which the signal is transmitted from the frequency hopping candidate channels in order to receive the transmitted signal.
摘要翻译：公开了一种跳频扩散系统的干扰信号避免装置及其方法。根据本发明的发送/接收干扰信号避免信号的方法包括：考虑干扰信号的特性，确定跳频信道组和干扰信号检测器的参数; 通过使用所确定的干扰信号检测器检测是否存在关于要用于下一次跳频的跳频候选信道的干扰信号; 通过由所述干扰信号检测器确定的在所述跳频候选信道中不存在干扰信号的信道发送信号; 并且从跳频候选信道搜索发送信号的信道，以便接收所发送的信号。

32. 发明申请

US20120299072A1 SEMICONDUCTOR DEVICE HAVING METAL PLUG AND METHOD OF FORMING THE SAME 有权
标题翻译：具有金属插件的半导体器件及其形成方法
公开(公告)号：US20120299072A1
公开(公告)日：2012-11-29
申请号：US13425906
申请日：2012-03-21
申请人： WAN-DON KIM , Seung-Hwan Lee , Beom-Seok Kim , Kyu-Ho Cho , Oh-Seong Kwon , Geun-Kyu Choi , Ji-Eun Lim , Yong-Suk Tak
发明人： WAN-DON KIM , Seung-Hwan Lee , Beom-Seok Kim , Kyu-Ho Cho , Oh-Seong Kwon , Geun-Kyu Choi , Ji-Eun Lim , Yong-Suk Tak
IPC分类号： H01L27/06
CPC分类号： H01L21/823475 , H01L21/823456
摘要： Provided is a semiconductor device including first, second and third source/drain regions. A first conductive plug in contact with the first source/drain regions, having a first width and a first height, and including a first material is provided. An interlayer insulating layer covering the first conductive plug and the substrate is disposed. A second conductive plug vertically penetrating the interlayer insulating layer to be in contact with the second source/drain regions, having a second width and a second height, and including a second material is provided. A third conductive plug vertically penetrating the interlayer insulating layer to be in contact with the third source/drain regions, having a third width and a third height, and including a third material is disposed. The second material includes a noble metal, a noble metal oxide or a perovskite-based conductive oxide.
摘要翻译：提供了包括第一，第二和第三源极/漏极区域的半导体器件。提供了与第一源/漏区接触的第一导电插塞，具有第一宽度和第一高度，并且包括第一材料。设置覆盖第一导电插塞和基板的层间绝缘层。提供垂直穿过层间绝缘层以与具有第二宽度和第二高度并且包括第二材料的第二源/漏区接触的第二导电插塞。设置垂直贯穿层间绝缘层与第三源极/漏极区域接触的第三导电插塞，具有第三宽度和第三高度，并且包括第三材料。第二种材料包括贵金属，贵金属氧化物或钙钛矿型导电氧化物。

33. 发明授权

US08219108B2 Smart radio communication system and method of operating the same 有权
标题翻译：智能无线电通信系统及其操作方法
公开(公告)号：US08219108B2
公开(公告)日：2012-07-10
申请号：US12533109
申请日：2009-07-31
申请人： Seung-Hwan Lee , Jin Up Kim , Kyu Tae Lee
发明人： Seung-Hwan Lee , Jin Up Kim , Kyu Tae Lee
IPC分类号： H04W4/00
CPC分类号： H04W72/048 , H04W16/14
摘要： Provided is a method of operating a smart radio communication system, the method including: collecting information associated with each of a plurality of radio access technologies (RATs) through an access to the plurality of RATs; receiving a type of a service, requested by a terminal, via a first RAT accessing the terminal among the plurality of RATs; selecting an optimal channel based on the collected information and the received type of the service; and transmitting a content corresponding to the service via the selected optimal channel.
摘要翻译：提供了一种操作智能无线电通信系统的方法，该方法包括：通过对多个RAT的接入来收集与多个无线电接入技术（RAT）中的每一个相关联的信息; 通过接入所述多个RAT中的所述终端的第一RAT接收由终端请求的服务类型; 基于所收集的信息和接收到的服务类型来选择最佳信道; 以及经由所选择的最优信道发送与所述服务相对应的内容。

34. 发明申请

US20120086014A1 Semiconductor Device Having Glue Layer And Supporter 有权
标题翻译：具有胶层和支撑体的半导体器件
公开(公告)号：US20120086014A1
公开(公告)日：2012-04-12
申请号：US13182916
申请日：2011-07-14
申请人： Wan-Don Kim , Beom-Seok Kim , Yong-Suk Tak , Kyu-Ho Cho , Seung-Hwan Lee , Oh-Seong Kwon , Geun-Kyu Choi
发明人： Wan-Don Kim , Beom-Seok Kim , Yong-Suk Tak , Kyu-Ho Cho , Seung-Hwan Lee , Oh-Seong Kwon , Geun-Kyu Choi
IPC分类号： H01L29/12 , H01L23/48
CPC分类号： H01L28/60 , H01L24/32 , H01L28/90 , H01L2224/32225 , H01L2224/32245 , H01L2224/8385
摘要： A plurality of metal patterns are disposed on a substrate. A support structure is provided between the plurality of metal patterns. The support structure has a supporter and a glue layer. Each of the plurality of metal patterns has a greater vertical length than a horizontal length on the substrate when viewed from a cross-sectional view. The supporter has a band gap energy of at least 4.5eV. The glue layer is in contact with the plurality of metal patterns. The supporter and the glue layer are formed of different materials.
摘要翻译：多个金属图案设置在基板上。在多个金属图案之间提供支撑结构。支撑结构具有支撑体和胶层。当从横截面视图观察时，多个金属图案中的每一个具有比基板上的水平长度更大的垂直长度。支架具有至少4.5eV的带隙能量。胶层与多个金属图案接触。支撑体和胶层由不同的材料形成。

35. 发明授权

US08105521B2 Aromatic polyamide filament and method of manufacturing the same 有权
标题翻译：芳香族聚酰胺丝及其制造方法
公开(公告)号：US08105521B2
公开(公告)日：2012-01-31
申请号：US11994643
申请日：2006-07-05
申请人： In-Sik Han , Jae-Young Lee , Seung-Hwan Lee , Chang-Bae Lee , So-Yeon Kwon
发明人： In-Sik Han , Jae-Young Lee , Seung-Hwan Lee , Chang-Bae Lee , So-Yeon Kwon
IPC分类号： D01D5/18
CPC分类号： D01F6/605 , Y10T428/2913 , Y10T428/2969
摘要： Disclosed are wholly aromatic polyamide filament and a method of manufacturing the same, characterized in that, in a process of preparing wholly aromatic polyamide polymer, a multiple tubular feed pipe for polymeric monomer and polymerization solvent with specific construction of adjacent inner paths 11a and outer paths 11b which are alternately arranged one another is used to feed either aromatic diacid chloride A or aromatic diamine dissolved in the polymerization solvent B into a polymerization reactor 20 through corresponding one among the inner and outer paths 11a and 11b. The present invention is effective to progress uniform and homogeneous polymerization over all of area of a polymerization reactor 20 leading to reduction of deviation in degree of polymerization, since polymeric monomers are miscible and react together very well immediately after putting the monomers into the reactor 20. Accordingly, the wholly aromatic polyamide filament produced exhibits narrow PDI and increased ACS, so as to considerably improve strength and modulus thereof.
摘要翻译：公开了全芳族聚酰胺长丝及其制造方法，其特征在于，在制备全芳族聚酰胺聚合物的方法中，用于聚合单体的多管式进料管和具有相邻内部通道11a和外部通道的特定结构的聚合溶剂 11b彼此交替排列，用于将溶解在聚合溶剂B中的芳香族二酰氯A或芳香族二胺通过内部通路11a和内部通路11b中的相应一个进入聚合反应器20。本发明有效地在聚合反应器20的所有区域上进行均匀均匀的聚合，导致聚合度偏差的降低，因为聚合单体是可混溶的，并且在将单体放入反应器20后立即非常好地反应。因此，所生产的全芳族聚酰胺长丝表现出窄的PDI和增加的ACS，从而显着提高其强度和模量。

36. 发明授权

US07838966B2 Semiconductor devices including resistor elements comprising a bridge and base elements and related methods 有权
标题翻译：包括电阻元件的半导体器件包括桥接器和基极元件以及相关方法
公开(公告)号：US07838966B2
公开(公告)日：2010-11-23
申请号：US11825181
申请日：2007-07-05
申请人： Xiao Quan Wang , Chang-Bong Oh , Seung-Hwan Lee
发明人： Xiao Quan Wang , Chang-Bong Oh , Seung-Hwan Lee
IPC分类号： H01L23/62
CPC分类号： H01L27/0802 , H01L28/20
摘要： A semiconductor device may include a resistance pattern including a resistance material on a substrate. The resistance pattern may include first and second spaced apart base elements, a bridge element, and first, second, third, and fourth extension elements. The first and second base elements may be substantially parallel, and the bridge element may be connected between respective center portions of the first and second spaced apart base elements. The first and second extension elements may be connected to opposite ends of the first base element and may extend toward the second base element, and the third and fourth extension elements may be connected to opposite ends of the second base element and may extend toward the first base element. Related methods are also discussed.
摘要翻译：半导体器件可以包括在基板上包括电阻材料的电阻图案。电阻图案可以包括第一和第二间隔开的基本元件，桥接元件以及第一，第二，第三和第四延伸元件。第一和第二基座元件可以是基本上平行的，并且桥接元件可以连接在第一和第二间隔开的基本元件的相应中心部分之间。第一和第二延伸元件可以连接到第一基座元件的相对端并且可以朝向第二基座元件延伸，并且第三和第四延伸元件可以连接到第二基座元件的相对端并且可以朝着第一基座元件基本元素还讨论了相关方法。

37. 发明申请

US20100035552A1 METHOD FOR PROVIDING SERVICE, AND METHOD AND APPARATUS FOR ALLOCATING RESOURCE IN WIRELESS COMMUNICATION SYSTEM 有权
标题翻译：提供服务的方法，无线通信系统分配资源的方法和装置
公开(公告)号：US20100035552A1
公开(公告)日：2010-02-11
申请号：US12539356
申请日：2009-08-11
申请人： Seung-Hwan Lee , Jin Up Kim , Kyu Tae Lee
发明人： Seung-Hwan Lee , Jin Up Kim , Kyu Tae Lee
IPC分类号： H04B7/005
CPC分类号： H04W72/10
摘要： Provided is a method for providing a service, and a method and an apparatus for allocating a resource in a wireless communication system. Services to be provided to users are divided into one of primary and secondary services based on priority in terms of frequency utilization. A service is provided using frequency channel remaining after being used in the primary service in a time zone when frequency utilization rate of the primary service is a threshold value or less. Accordingly, when service data corresponding to the secondary service are received, a user terminal stores the service data in a storage unit. Then, when the user requests provision of the corresponding service, the user terminal provides the stored service data to the user.
摘要翻译：提供了一种用于提供服务的方法，以及用于在无线通信系统中分配资源的方法和装置。根据频率利用率的优先级将提供给用户的服务分为主要和次要服务之一。在主服务的频率利用率为阈值以下的情况下，在时区中的主服务中使用后，使用频道剩余的服务。因此，当接收到与辅助服务相对应的服务数据时，用户终端将服务数据存储在存储单元中。然后，当用户请求提供相应的服务时，用户终端向用户提供所存储的服务数据。

38. 发明申请

US20090250741A1 Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the same 有权
标题翻译：具有复合介质层的半导体器件和栅极结构及其制造方法
公开(公告)号：US20090250741A1
公开(公告)日：2009-10-08
申请号：US12457364
申请日：2009-06-09
申请人： Ki-Yeon Park , Kyoung-Ryul Yoon , Dae-Sik Choi , Han-Mei Choi , Seung-Hwan Lee
发明人： Ki-Yeon Park , Kyoung-Ryul Yoon , Dae-Sik Choi , Han-Mei Choi , Seung-Hwan Lee
IPC分类号： H01L29/788
CPC分类号： H01L21/022 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02247 , H01L21/0228 , H01L21/28273 , H01L21/318 , H01L29/513 , H01L29/7881
摘要： A semiconductor device and/or gate structure having a composite dielectric layer and methods of manufacturing the same is provided. In the semiconductor device, gate structure, and methods provided, a first conductive layer may be formed on a substrate. A native oxide layer formed on the first conductive layer may be removed. A surface of the first conductive layer may be nitrided so that the surface may be altered into a nitride layer. A composite dielectric layer including the first and/or second dielectric layers may be formed on the nitride layer. A second conductive layer may be formed on the composite dielectric layer. The first dielectric layer may include a material having a higher dielectric constant. The second dielectric layer may be capable of suppressing crystallization of the first dielectric layer.
摘要翻译：提供了具有复合电介质层的半导体器件和/或栅极结构及其制造方法。在半导体器件中，提供栅极结构和方法，可以在衬底上形成第一导电层。可以除去形成在第一导电层上的自然氧化物层。第一导电层的表面可以被氮化，使得表面可以改变为氮化物层。可以在氮化物层上形成包括第一和/或第二电介质层的复合电介质层。可以在复合介电层上形成第二导电层。第一电介质层可以包括具有较高介电常数的材料。第二电介质层可以抑制第一电介质层的结晶化。

39. 发明授权

US07595080B2 Method for preparing an extract of fruit of Sophora japonica containing isoflavone 有权
标题翻译：含有异黄酮的苦参粳果提取物的制备方法
公开(公告)号：US07595080B2
公开(公告)日：2009-09-29
申请号：US10577553
申请日：2003-12-24
申请人： Suk-Hyung Kwon , Bo-Sik Hwang , Kuk-Hwan Kim , Seung-Hwan Lee , Eun-Ju Yoon , Seung-Hee Lee
发明人： Suk-Hyung Kwon , Bo-Sik Hwang , Kuk-Hwan Kim , Seung-Hwan Lee , Eun-Ju Yoon , Seung-Hee Lee
IPC分类号： A23L1/20
CPC分类号： A61K36/489 , A23L19/01 , A23L33/105 , A23V2002/00 , C12P17/06 , A23V2250/2116
摘要： The present invention relates to a method for preparing a Sohporae Fructus extract containing isoflavone. More particularly, the present invention relates to a method for preparing a Sohporae Fructus extract containing isoflavone in high concentration, which is characterized by the steps of hydrothermal extraction, enzyme treatment and ethanol extraction of Sophorae Fructus. A Sophorae Fructus extract containing a high concentration of aglycon-type isoflavone having an excellent bio-absorbability can be prepared by the method of the present invention.
摘要翻译：本发明涉及一种制备含有异黄酮的豆蔻提取物的方法。更具体地说，本发明涉及含有高浓度异黄酮的豆蔻提取物的方法，其特征在于以下步骤：水解提取，酶处理和乙醇提取苦参。可以通过本发明的方法制备含有高浓度的具有优异生物吸收性的糖苷配基型异黄酮的苦参提取物。

40. 发明授权

US07517750B2 Flash memory devices having multilayered inter-gate dielectric layers including metal oxide layers and methods of manufacturing the same 失效
标题翻译：具有包括金属氧化物层的多层栅极间电介质层的闪存器件及其制造方法
公开(公告)号：US07517750B2
公开(公告)日：2009-04-14
申请号：US11383102
申请日：2006-05-12
申请人： Han-Mei Choi , Young-Geun Park , Seung-Hwan Lee , Young-Sun Kim
发明人： Han-Mei Choi , Young-Geun Park , Seung-Hwan Lee , Young-Sun Kim
IPC分类号： H01L21/8238
CPC分类号： H01L27/115 , H01L27/11519 , H01L27/11521
摘要： Embodiments of the present invention provide methods of manufacturing memory devices including forming floating gate patterns on a semiconductor substrate having active regions thereon, wherein the floating gate patterns cover the active regions and are spaced apart from the active regions; forming an inter-gate dielectric layer on the semiconductor substrate having the floating gate patterns by alternately stacking a zirconium oxide layer and an aluminum oxide layer at least once, wherein the inter-gate dielectric layer is formed by a deposition process using O3 gas as a reactive gas; forming a control gate layer on the inter-gate dielectric layer; and forming a control gate, an inter-gate dielectric layer pattern and a floating gate by sequentially patterning the control gate layer, the inter-gate dielectric layer and the floating gate pattern, wherein the inter-gate dielectric layer pattern and the control gate are sequentially stacked across the active regions, and the floating gate is formed between the active regions and the inter-gate dielectric layer pattern Memory devices, such as flash memory devices are also provided.
摘要翻译：本发明的实施例提供了制造存储器件的方法，包括在其上具有有源区的半导体衬底上形成浮置栅极图案，其中浮置栅极图案覆盖有源区并与有源区间隔开; 通过将氧化锆层和氧化铝层交替层叠至少一次来形成具有浮置栅极图案的半导体衬底上的栅极间电介质层，其中栅极间电介质层通过使用O 3气体作为反应气体在所述栅极间电介质层上形成控制栅极层; 以及通过对控制栅极层，栅极间电介质层和浮置栅极图案顺序构图来形成控制栅极，栅极间电介质层图案和浮置栅极，其中栅极间电介质层图案和控制栅极是顺序堆叠在有源区上，并且在有源区之间形成浮栅，并且还提供诸如闪存器件的栅极间电介质层图案存储器件。

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