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31. 发明专利

DE102009033442A1 未知
公开(公告)号：DE102009033442A1
公开(公告)日：2010-01-28
申请号：DE102009033442
申请日：2009-07-16
申请人： INFINEON TECHNOLOGIES AG
发明人： MEYER THORSTEN , SEZI RECAI
IPC分类号： H01L23/50 , H01L21/60 , H01L23/29

32. 发明专利

DE10238024B4 未知
公开(公告)号：DE10238024B4
公开(公告)日：2007-03-08
申请号：DE10238024
申请日：2002-08-20
申请人： INFINEON TECHNOLOGIES AG
发明人： SEZI RECAI
IPC分类号： H01L21/302 , H01L21/768 , H01L21/306 , H01L21/311 , H01L21/312 , H01L21/4763 , H01L23/522
摘要： Process for integration of air as dielectric in semiconductor devices comprises (a) applying a layer of dielectric to be structurized to a substrate, (b) structurizing this layer, (c) applying a conductor metal, (d) applying an organic dielectric, and (e) bringing the device into contact with a fluorine compound. An Independent claim is also included for semiconductor device with air dielectric layer(s) obtained by this process.

33. 发明专利

DE10115882B4 未知
公开(公告)号：DE10115882B4
公开(公告)日：2006-08-24
申请号：DE10115882
申请日：2001-03-30
申请人： INFINEON TECHNOLOGIES AG
发明人： SEZI RECAI , HALIK MARCUS , WALTER ANDREAS , LOWACK KLAUS
IPC分类号： C08G73/22 , C08G69/26 , C08G69/32 , C08G69/48 , C08G73/10 , C09D177/10 , C09D199/00 , H01B3/30
摘要： The invention relates to novel polyhydroxyamide compounds that, in the form of their oxazoles, ane suited as a coating material, particularly for electronic components. The invention also relates to a method for producing these novel compounds and to the use thereof.

34. 发明专利

DE102004051152A1 未知
公开(公告)号：DE102004051152A1
公开(公告)日：2006-05-04
申请号：DE102004051152
申请日：2004-10-20
申请人： INFINEON TECHNOLOGIES AG
发明人： HOFFMANN KURT , DEHM CHRISTINE , SEZI RECAI , WALTER ANDREAS
IPC分类号： G11C13/00 , G11C5/06 , G11C7/18 , H01L27/06 , H01L27/105 , H01L45/00
摘要： A memory arrangement includes: a first line for applying a reference voltage, a second line for applying an operating voltage, and a plurality of resistive memory elements, each element includes a resistive memory cell and a MOS memory cell selection transistor. A NOR memory arrangement is configured with each memory element including the resistive memory cell and selection transistor connected in series with the transistor connected to the first line, and the memory cell connected to the second line. A NAND memory arrangement is configured with a series of resistive memory elements forming a chain with each memory element including the resistive memory cell and selection transistor connected in parallel. The chain is connected to the first line disposed on a side of the memory cells facing the selection transistors and the second line disposed on a side of the memory cells which is remote from the selection transistors.

35. 发明专利

DE102004037151A1 未知
公开(公告)号：DE102004037151A1
公开(公告)日：2006-03-23
申请号：DE102004037151
申请日：2004-07-30
申请人： INFINEON TECHNOLOGIES AG
发明人： ENGL REIMUND , SCHUMANN JOERG , WALTER ANDREAS , SEZI RECAI , MALTENBERGER ANNA
IPC分类号： H01L51/40 , C07F1/08 , C07F5/00 , C07F7/02 , C07F19/00 , C23C28/00 , G11C13/02 , H01L27/24 , H01L51/30
摘要： Layers are produced, where the layers include a first layer formed of a metal and a second layer formed of an organic compound, the metal and the organic compound entering into an interaction, so that the layer serves as an electroactive layer for nonvolatile memories, the metal layer being deposited onto a substrate and, if appropriate, patterned, then being coated with an organic compound and being treated with a second organic compound.

36. 发明专利

DE102004037150A1 未知
公开(公告)号：DE102004037150A1
公开(公告)日：2006-03-02
申请号：DE102004037150
申请日：2004-07-30
申请人： INFINEON TECHNOLOGIES AG
发明人： WALTER ANDREAS , WEITZ THOMAS , ENGL REIMUND , SEZI RECAI , MALTENBERGER ANNA , SCHUMANN JOERG
IPC分类号： C07C255/10 , C07C255/34 , C07C255/35 , C07C325/02 , G11C13/00 , H01L51/05
摘要： An integrated circuit having resistive memory is disclosed. In one embodiment, the memory includes novel memory cells which have two electrodes and a layer arranged in between and including an active material which contains [1,2]dithiolo[4,3-[c]-1,2-dithiol-3,6-dithione, (2,4,7-trinitro-9-fluorenylidene)malonodinitrile and a polymer are disclosed. In one embodiment, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

37. 发明专利

DE50009379D1 未知
公开(公告)号：DE50009379D1
公开(公告)日：2005-03-03
申请号：DE50009379
申请日：2000-09-07
申请人： INFINEON TECHNOLOGIES AG
发明人： SEZI RECAI , SCHMID GUENTER , LOWACK KLAUS , RADLIK WOLFGANG , HAUSSMANN JOERG
IPC分类号： C23C18/20 , C23C18/16 , C23C18/30 , H01L21/288 , H05K3/18
摘要： A method for metallizing dielectrics includes applying a photosensitive dielectric to a substrate. The dielectric is then exposed to light through a mask, is seeded with a metal and is subjected to a temperature treatment. Afterwards, the dielectric is chemically metallized. Alternatively, the dielectric can be first be seeded with a metal after being applied to the substrate, and can then be exposed to light through a mask. Afterwards, excess seeding material is removed and the dielectric is chemically metallized.

38. 发明专利

DE10228770A1 未知
公开(公告)号：DE10228770A1
公开(公告)日：2004-02-12
申请号：DE10228770
申请日：2002-06-27
申请人： INFINEON TECHNOLOGIES AG
发明人： SEZI RECAI , WALTER ANDREAS , MALTENBERGER ANNA , LOWACK KLAUS
IPC分类号： C08G73/02 , C08G69/26 , C08G69/32 , C08G73/22 , H01B3/30 , H01B3/44 , H01L21/312 , H01L21/768 , H01L23/522 , C08G73/10 , C08L79/06 , H01L23/532 , C09D5/24
摘要： New poly-o-hydroxyamides containing divalent polynuclear (hetero)aromatic residues in the polymer chain. Poly-o-hydroxyamides of formula (I). Y2 = -(Phe-O)n-E-(O-Phe)n-; Phe = phenylene; Y1, Y3 = as for Y2, or various optionally substituted (hetero)arylene groups, e.g. phenylene, naphthylene, pyrazinediyl, furandiyl (21 groups listed); Z1-Z3 = various tetravalent (hetero)aromatic groups, e.g. benzene-1,2,4,5-tetrayl, furan-2,3,4,5-tetrayl, fluorene-2,3,6,7-tetrayl (10 groups listed); A = (a) H, -CO(CH2)gCH3, -COCH=CH2, -CO-aryl etc. (14 groups listed) (if a = 0 and/or d = 1), or (b) OH, amino, -OCH2CH=CH2, aryloxy etc. (9 groups listed (if a = 1 and/or d = 0); E = various divalent polynuclear (hetero)aromatic groups, e.g. 1,1'-binaphthylene, pyrene-diyl, -Phe-CPh2-Phe- (10 groups listed); Ph = phenyl; R1 = H, -(CH2)fCH3, -(CH2)f-Ph, -COO(CH2)fCH3 or -COO(CH2)fPh; a, d, n = 0 or 1; b = 1-200; c = 0-200. Full definitions are given in the DEFINITIONS (Full Definitions) field. Independent claims are also included for the following: (1) Polybenzoxazoles (PBO) obtained from (I); (2) Method (M1) for the production of (I) by reacting monomers of formula H2N-Z(OR1)2-NH2 (II) with dicarboxylic acids or activated derivatives thereof of formula L-CO-Y-CO-L (III); (3) Method (M2) for the production of PBO by heating (I); (4) Electronic components (EC) with a dielectric containing PBO as above; (5) Method (M3) for the production of EC by coating a substrate with a solution of (I), evaporating the solvent, heating the resulting film to form PBO, structuring the PBO film to form a resist with trenches and contact holes, depositing a conductive material on the relief so as to fill the holes etc. and then removing excess conductive material; and (6) Method (M4) for the production of EC by coating a solution of (I) onto a substrate with trenches and contact holes between metallic surface structures, evaporating the solvent so that the trenches and holes are filled with (I) and then heating to form PBO. Z = Z1, Z2 or Z3; Y = Y1, Y2 or Y3; and L = OH or an activating group.

39. 发明专利

DE10228762A1 未知
公开(公告)号：DE10228762A1
公开(公告)日：2004-02-05
申请号：DE10228762
申请日：2002-06-27
申请人： INFINEON TECHNOLOGIES AG
发明人： WALTER ANDREAS , SEZI RECAI
IPC分类号： C07C51/09 , C07C51/245 , C07C51/60 , C07C63/46 , C07C65/24 , C07C65/26 , C07D493/10 , C08G63/02 , H01L21/44
摘要： Novel dicarboxylic acids are described herein that are suitable for the preparation of high-temperature-stable polymers, which are particularly useful in forming suitable dielectrics in microelectronics.

40. 发明专利

DE10227615A1 未知
公开(公告)号：DE10227615A1
公开(公告)日：2004-01-15
申请号：DE10227615
申请日：2002-06-20
申请人： INFINEON TECHNOLOGIES AG
发明人： SEZI RECAI , BARTH HANS-JOACHIM
IPC分类号： H01L21/312 , H01L21/768 , H01L23/522 , B81C1/00
摘要： The invention relates to a layer arrangement and to a process for producing a layer arrangement. The layer arrangement has a layer which is arranged on a substrate and includes a first subregion comprising decomposable material and a second subregion which is arranged next to the first subregion and has a useful structure comprising a non-decomposable material. Furthermore, the layer arrangement has a covering layer on the layer comprising decomposable material and the useful structure, the layer arrangement being designed in such a manner that the decomposable material can be removed from the layer arrangement.

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