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    • 32. 发明授权
    • Thin film transistor array panel for liquid crystal display having pixel electrode
    • 具有像素电极的液晶显示器的薄膜晶体管阵列面板
    • US07289171B2
    • 2007-10-30
    • US11551450
    • 2006-10-20
    • Dong-Gyu KimHyang-Shik KongJang-Soo Kim
    • Dong-Gyu KimHyang-Shik KongJang-Soo Kim
    • G02F1/136G02F1/1343
    • G02F1/136213G02F1/1337G02F1/133784G02F1/134336G02F1/136227G02F2201/123
    • A TFT array panel includes an insulating substrate, a gate line and a storage electrode line formed thereon. The gate line and the storage electrode line are covered with a gate insulating layer, and a semiconductor island is formed on the gate insulating layer. A pair of ohmic contacts are formed on the semiconductor island, and a data line and a drain electrode are formed thereon. The data line and the drain electrode are covered with a passivation layer having a contact hole exposing the drain electrode. A pixel electrode is formed on the passivation layer and connected to the drain electrode through the contact hole. The TFT array panel is covered with an alignment layer rubbed approximately in a direction from the upper left corner to the lower right corner of the TFT array panel or the pixel electrodes. The pixel electrode has approximately a rectangular shape and overlaps the gate line and the data line. The pixel electrode has an expansion located near the upper left corner of the pixel electrode to increase the width of the corresponding overlapping area between the pixel electrode and the gate line and/or the data line.
    • TFT阵列面板包括绝缘基板,栅极线和形成在其上的存储电极线。 栅极线和存储电极线被栅极绝缘层覆盖,并且在栅极绝缘层上形成半导体岛。 在半导体岛上形成一对欧姆接触,在其上形成数据线和漏电极。 数据线和漏电极被具有暴露漏电极的接触孔的钝化层覆盖。 像素电极形成在钝化层上,并通过接触孔与漏电极连接。 TFT阵列面板被大致沿着从TFT阵列板的左上角到右下角或像素电极的方向摩擦的取向膜覆盖。 像素电极具有大致矩形形状并且与栅极线和数据线重叠。 像素电极具有位于像素电极的左上角附近的扩展部,以增加像素电极与栅极线和/或数据线之间的对应重叠区域的宽度。
    • 36. 发明授权
    • Thin film transistor array panel
    • 薄膜晶体管阵列面板
    • US06650379B2
    • 2003-11-18
    • US10280055
    • 2002-10-25
    • Bum-Kee BaekHyang-Shik KongDal-Moe Kim
    • Bum-Kee BaekHyang-Shik KongDal-Moe Kim
    • G02F113
    • G02F1/13458G02F1/136227G02F1/1368H01L27/124H01L27/1288
    • Disclosed is a simplified manufacturing method for liquid crystal displays. A gate wire including a gate line, a gate pad and a gate electrode is formed on an insulating substrate. Next, a gate insulating layer covering the gate wire, a semiconductor layer, an ohmic contact layer, and a data conductive layer are sequentially deposited, and a photoresist pattern is formed on the data conductive layer. Following this step, the data conductive layer, using the photoresist pattern as an etch mask, is etched to form a data wire including a data line, a source electrode, a drain electrode, and a data pad. Next, the photoresist pattern is reflowed to cover the portion between the source electrode and the drain electrode, and a portion of the ohmic contact layer adjacent to a periphery of the data wire. Subsequently, portions of the ohmic contact layer and the semiconductor layer, which are not covered by the photoresist pattern, are etched, and the photoresist pattern is removed. Next, a portion of the ohmic contact layer, which is not covered by the data wire, is etched to expose a portion of the semiconductor layer between the source electrode and the drain electrode that is a channel portion of a thin film transistor. Finally, a protection layer, a pixel electrode, a redundant gate pad and a redundant data pad are formed.
    • 公开了一种用于液晶显示器的简化制造方法。 在绝缘基板上形成包括栅极线,栅极焊盘和栅电极的栅极线。 接下来,依次沉积覆盖栅极线,半导体层,欧姆接触层和数据导电层的栅极绝缘层,并且在数据导电层上形成光致抗蚀剂图案。 在该步骤之后,蚀刻使用光致抗蚀剂图案作为蚀刻掩模的数据导电层,以形成包括数据线,源电极,漏电极和数据焊盘的数据线。 接下来,光致抗蚀剂图案被回流以覆盖源电极和漏电极之间的部分,以及与数据线周边相邻的欧姆接触层的一部分。 随后,蚀刻未被光致抗蚀剂图案覆盖的欧姆接触层和半导体层的部分,并除去光致抗蚀剂图案。 接下来,蚀刻未被数据线覆盖的欧姆接触层的一部分,以暴露作为薄膜晶体管的沟道部分的源极和漏极之间的半导体层的一部分。 最后,形成保护层,像素电极,冗余栅极焊盘和冗余数据焊盘。
    • 38. 发明授权
    • Thin-film transistor substrate and method of manufacturing the same
    • 薄膜晶体管基板及其制造方法
    • US08183097B2
    • 2012-05-22
    • US12186659
    • 2008-08-06
    • Sang-Ki KwakHyang-Shik KongSun-Il Kim
    • Sang-Ki KwakHyang-Shik KongSun-Il Kim
    • H01L27/88
    • H01L27/1288H01L27/1225H01L27/124H01L29/7869
    • A thin-film transistor (TFT) substrate includes a semiconductor pattern, a conductive pattern, a first wiring pattern, an insulation pattern and a second wiring pattern. The semiconductor pattern is formed on a substrate. The conductive pattern is formed as a layer identical to the semiconductor pattern on the substrate. The first wiring pattern is formed on the semiconductor pattern. The first wiring pattern includes a source electrode and a drain electrode spaced apart from the source electrode. The insulation pattern is formed on the substrate having the first wiring pattern to cover the first wiring pattern. The second wiring pattern is formed on the insulation pattern. The second wiring pattern includes a gate electrode formed on the source and drain electrodes. Therefore, a TFT substrate is manufactured using two or three masks, so that manufacturing costs may be decreased.
    • 薄膜晶体管(TFT)衬底包括半导体图案,导电图案,第一布线图案,绝缘图案和第二布线图案。 半导体图案形成在基板上。 导电图案形成为与衬底上的半导体图案相同的层。 第一布线图案形成在半导体图案上。 第一布线图案包括与源电极间隔开的源电极和漏电极。 在具有第一布线图案的基板上形成绝缘图案以覆盖第一布线图案。 第二布线图案形成在绝缘图案上。 第二布线图案包括形成在源极和漏极上的栅电极。 因此,使用两个或三个掩模制造TFT基板,从而可以降低制造成本。
    • 40. 发明授权
    • Thin film transistor array panel and method for manufacturing the same
    • 薄膜晶体管阵列面板及其制造方法
    • US07884366B2
    • 2011-02-08
    • US12220481
    • 2008-07-23
    • Sang-Ki KwakHyang-Shik KongByung-Duk Yang
    • Sang-Ki KwakHyang-Shik KongByung-Duk Yang
    • H01L29/10H01L21/00G02F1/1343
    • G02F1/136209G02F2001/134345G02F2001/136222
    • A thin film transistor array panel and a method of its manufacture are presented. The thin film transistor array panel according to an embodiment includes a substrate, a gate line extending in a first direction on the substrate, a data line extending in a second direction on the substrate and intersecting and insulated from the gate line, a thin film transistor including a control terminal connected to the gate line, an input terminal connected to the data line and an output terminal, a color filter formed on the thin film transistor, a light blocking member formed on the thin film transistor, defining the space for storing the color filter, and including a first protection portion surrounding at least the region of the output terminal of the thin film transistor, and a pixel electrode formed on the light blocking member and the color filter and contacting the region of the output terminal surrounded by the first protection portion of the light blocking member.
    • 介绍了一种薄膜晶体管阵列面板及其制造方法。 根据实施例的薄膜晶体管阵列面板包括基板,在基板上沿第一方向延伸的栅极线,在基板上沿第二方向延伸并与栅极线交叉并绝缘的数据线;薄膜晶体管 包括连接到栅极线的控制端子,连接到数据线的输入端子和输出端子,形成在薄膜晶体管上的滤色器,形成在薄膜晶体管上的遮光部件,限定用于存储 并且包括至少围绕所述薄膜晶体管的输出端子的区域的第一保护部分和形成在所述遮光部件和所述滤色器上的像素电极,并且与所述第一保护部分接​​触,所述区域被所述第一 防光部件。