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31. 发明授权

US11271092B2 Low temperature polycrystalline semiconductor device and manufacturing method thereof 有权
公开(公告)号：US11271092B2
公开(公告)日：2022-03-08
申请号：US17028341
申请日：2020-09-22
申请人： Ying Hong
发明人： Ying Hong
IPC分类号： H01L21/00 , H01L29/66 , H01L21/02 , H01L27/12 , H01L29/786 , H01L29/45
摘要： Provided is a method of manufacturing a semiconductor device, the method including: forming a buffer layer of an insulating layer on a substrate; a seed layer formation operation of forming, on the buffer layer, a seed layer of at least one selected from the group consisting of NiCxOy, NiNxOy, NiCxNyOz, NiCxOy:H, NiNxOy:H, NiCxNyOz:H, NixSiy, and NixGey; a silicon layer formation operation of forming an amorphous silicon layer on the seed layer; and a crystallization operation of crystallizing the amorphous silicon layer by a catalytic action of Ni by thermally treating the amorphous silicon layer.

32. 发明授权

US11205570B2 Method for manufacturing single-grained nanowire and method for manufacturing semiconductor device employing same single-grained nanowire 有权
公开(公告)号：US11205570B2
公开(公告)日：2021-12-21
申请号：US17028332
申请日：2020-09-22
申请人： Ying Hong
发明人： Ying Hong
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/20 , H01L29/76 , H01L29/15 , H01L21/02 , H01L27/12 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/786
摘要： A method of manufacturing a semiconductor nanowire semiconductor device is described. The method includes forming an amorphous channel material layer on a substrate, patterning the channel material layer to form semiconductor nanowires extending in a lateral direction on the substrate, and forming a cover layer covering an upper of the semiconductor nanowire. The cover layer and the nanowire are patterned to form a trench exposing a side surface of an one end of the semiconductor nanowire and a catalyst material layer is formed in contact with a side surface of the semiconductor nanowire, and metal induced crystallization (MIC) by heat treatment is performed to crystallize the semiconductor nanowire in a length direction of the nanowire from the one end of the semiconductor nanowire in contact with the catalyst material.

33. 发明授权

US09047902B1 Touchdown sensor having a more stable crystal structure for use in hard disk drives 有权
标题翻译：触摸屏传感器具有更稳定的晶体结构，用于硬盘驱动器
公开(公告)号：US09047902B1
公开(公告)日：2015-06-02
申请号：US13160752
申请日：2011-06-15
申请人： Chengtao R. Yu , Yunfei Li , Yunfei Ding , Ying Hong
发明人： Chengtao R. Yu , Yunfei Li , Yunfei Ding , Ying Hong
IPC分类号： G11B5/39 , G11B5/60 , G11B5/31
CPC分类号： G11B5/6076 , G11B5/3133 , G11B5/314 , G11B5/3906 , G11B5/3967 , G11B5/607
摘要： A method and system for providing a touchdown sensor for use in disk drive is described. The touchdown sensor includes a seed layer, a sensor layer on the seed layer, and a capping layer. The sensor layer includes NiFe. In some embodiments, at least one of the seed layer and the capping layer promote stability and performance of the sensor layer.
摘要翻译：描述了一种用于提供用于磁盘驱动器的触地传感器的方法和系统。触地传感器包括种子层，种子层上的传感器层和覆盖层。传感器层包括NiFe。在一些实施方案中，种子层和覆盖层中的至少一个促进了传感器层的稳定性和性能。

34. 发明授权

US08780507B2 Read transducer and magnetic storage system implementing same 有权
标题翻译：读取传感器和实现相同的磁存储系统
公开(公告)号：US08780507B2
公开(公告)日：2014-07-15
申请号：US11966003
申请日：2007-12-28
申请人： Ying Hong , Kochan Ju , Ching Hwa Tsang
发明人： Ying Hong , Kochan Ju , Ching Hwa Tsang
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/398 , H01L43/08
摘要： A transducer according to one embodiment comprises a first ferromagnetic layer; a second ferromagnetic layer; and an electrically conductive layer positioned between the ferromagnetic layers; wherein a length of the first ferromagnetic layer in a first direction parallel to a plane of deposition thereof is greater than a length of the electrically conductive layer in the first direction such that a first end of the first ferromagnetic layer extends beyond an end of the electrically conductive layer in the first direction, wherein an electrical current enters or exits the end of the first ferromagnetic layer that extends beyond the end of the electrically conductive layer in the first direction. Additional transducer structures, and systems implementing such transducers, are also disclosed.
摘要翻译：根据一个实施例的换能器包括第一铁磁层; 第二铁磁层; 以及定位在铁磁层之间的导电层; 其中所述第一铁磁层在平行于其沉积平面的第一方向上的长度大于所述导电层在所述第一方向上的长度，使得所述第一铁磁层的第一端延伸超过所述电导电层，其中电流进入或离开在第一方向延伸超过导电层的端部的第一铁磁层的端部。还公开了附加的换能器结构和实现这种换能器的系统。

35. 发明授权

US08520337B1 Perpendicular magnetic recording writer pole with leading and trailing bevel side wall angles at air bearing surface 有权
标题翻译：垂直磁记录笔杆，空气轴承表面具有前后斜面侧壁角
公开(公告)号：US08520337B1
公开(公告)日：2013-08-27
申请号：US13436712
申请日：2012-03-30
申请人： Feng Liu , Zhigang Bai , Yugang Wang , Jinqiu Zhang , Ying Hong , Tao Pan
发明人： Feng Liu , Zhigang Bai , Yugang Wang , Jinqiu Zhang , Ying Hong , Tao Pan
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/315
摘要： A perpendicular magnetic recording transducer with leading and trailing bevel side wall angles at air bearing surface for use in a data storage device is provided. The transducer includes a magnetic writer pole having a pole tip facing an air bearing surface (ABS). The pole tip includes a pole tip face having a leading edge, a trailing edge, a first side wall, and a second side wall. The first side wall includes a first side wall section adjoining the leading edge and a second side wall section adjoining the trailing edge. The first side wall section is at a first angle measured from a perpendicular center line dividing the trailing edge. The second side wall section is at a second angle measured from a perpendicular center line dividing the trailing edge. The second angle is greater than three degrees. The first angle is greater than the second angle.
摘要翻译：提供了一种用于数据存储装置的在空气轴承表面具有前后倾斜侧壁角度的垂直磁记录传感器。换能器包括具有面向空气轴承表面（ABS）的极尖的磁性写入极。极尖包括具有前缘，后缘，第一侧壁和第二侧壁的极尖端面。第一侧壁包括邻接前缘的第一侧壁部分和与后缘相邻的第二侧壁部分。第一侧壁部分是从分割后缘的垂直中心线测量的第一角度。第二侧壁部分是从分割后缘的垂直中心线测量的第二角度。第二个角度大于三度。第一角度大于第二角度。

36. 发明授权

US08341826B1 Method for fabricating a magnetic recording transducer using a split seed layer 有权
标题翻译：使用分裂种子层制造磁记录换能器的方法
公开(公告)号：US08341826B1
公开(公告)日：2013-01-01
申请号：US12758469
申请日：2010-04-12
申请人： Hai Jiang , Yunhe Huang , Jinwen Wang , Yun-Fei Li , Ying Hong
发明人： Hai Jiang , Yunhe Huang , Jinwen Wang , Yun-Fei Li , Ying Hong
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3169 , G11B5/1278 , G11B5/3116 , G11B5/3163
摘要： A method and system for fabricating magnetic transducer are described.The method and system include providing a main pole having a bottom, a top wider than the bottom, and a top bevel. A nonmagnetic gap covering the main pole is provided. A portion of the nonmagnetic gap resides on the top of the main pole. A first seed layer is provided. At least a portion of the first seed layer covers the portion of the nonmagnetic gap on top of the main pole. A portion of the nonmagnetic gap on the magnetic recording transducer is removed after the first seed layer is provided. A second seed layer is provided after the portion of the nonmagnetic gap is removed. The second seed layer covers at least the portion of the first seed layer. A wrap-around shield layer is provided on the second seed layer.
摘要翻译：描述了用于制造磁换能器的方法和系统。该方法和系统包括提供具有底部，比底部宽的顶部和顶部斜面的主极。提供覆盖主极的非磁性间隙。非磁性间隙的一部分位于主极的顶部。提供第一种子层。第一种子层的至少一部分覆盖主极顶部的非磁性间隙的部分。在提供第一种子层之后，去除磁记录传感器上的非磁性间隙的一部分。在去除非磁性间隙的部分之后提供第二种子层。第二种子层覆盖至少第一种子层的部分。在第二籽晶层上设置环绕屏蔽层。

37. 发明授权

US08325450B2 Low resistance tunnel magnetoresistance (TMR) structure 有权
标题翻译：低电阻隧道磁阻（TMR）结构
公开(公告)号：US08325450B2
公开(公告)日：2012-12-04
申请号：US12332010
申请日：2008-12-10
申请人： Ying Hong , Kochan Ju , Tsann Lin , Ching Hwa Tsang
发明人： Ying Hong , Kochan Ju , Tsann Lin , Ching Hwa Tsang
IPC分类号： G01B5/66
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , Y10T428/1114
摘要： A magnetic structure in one embodiment includes a tunnel barrier layer; a free layer; and a buffer layer between the tunnel barrier layer and the free layer, wherein a cross sectional area of the tunnel barrier layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in a direction parallel to a plane of deposition thereof, wherein a cross sectional area of the buffer layer in a direction parallel to a plane of deposition thereof is greater than a cross sectional area of the free layer in the direction parallel to the plane of deposition thereof. Additional systems and methods are also presented.
摘要翻译：一个实施例中的磁性结构包括隧道势垒层; 自由层以及所述隧道势垒层和所述自由层之间的缓冲层，其中所述隧道势垒层在与其沉积平面平行的方向上的横截面面积大于所述自由层在平行于所述隧道势垒层的方向上的横截面积其沉积平面，其中在平行于其沉积平面的方向上的缓冲层的横截面面积大于在平行于其沉积平面的方向上的自由层的横截面面积。还介绍了其他系统和方法。

38. 发明申请

US20110279926A1 METHOD AND SYSTEM FOR PROVIDING A PERPENDICULAR MAGNETIC RECORDING TRANSDUCER USING A LOW ENERGY MILL 失效
标题翻译：使用低能量铣刀提供全能磁记录传感器的方法和系统
公开(公告)号：US20110279926A1
公开(公告)日：2011-11-17
申请号：US12777609
申请日：2010-05-11
申请人： Weimin Si , Yun-Fei Li , Ying Hong
发明人： Weimin Si , Yun-Fei Li , Ying Hong
IPC分类号： G11B5/187
CPC分类号： G11B5/1272 , G11B5/1278 , G11B5/1878 , G11B5/3116 , G11B5/315 , G11B5/3163 , Y10T29/49041 , Y10T29/49046 , Y10T29/49052
摘要： A method and system for fabricating magnetic transducer are described. The method and system include providing a main pole having a bottom and a top wider than the bottom. The method and system further include performing a high energy ion mill at an angle from a normal to the top of the main pole and at a first energy. The high energy ion mill removes a portion of the top of the main pole and exposes a top bevel surface for the main pole. The method and system also include performing a low energy ion mill at second energy and a glancing angle from the top bevel surface. The glancing angle is not more than fifteen degrees. The second energy is less than the first energy. The method and system also include depositing a nonmagnetic gap.
摘要翻译：描述了用于制造磁换能器的方法和系统。该方法和系统包括提供具有底部和顶部比底部更宽的主极。所述方法和系统还包括以与主极顶部法线和第一能量成一角度地执行高能离子磨。高能离子磨机去除主极顶部的一部分并暴露主极的顶部斜面。该方法和系统还包括在第二能量下执行低能量离子磨，并从顶部斜面观察到扫掠角。扫视角度不超过十五度。第二能量小于第一能量。该方法和系统还包括沉积非磁性间隙。

39. 发明授权

US07839607B2 Method to reduce corner shunting during fabrication of CPP read heads 有权
标题翻译：在CPP读取头制造过程中减少拐角分流的方法
公开(公告)号：US07839607B2
公开(公告)日：2010-11-23
申请号：US11890868
申请日：2007-08-07
申请人： Robert E. Fontana, Jr. , Ying Hong , Wipul Pemsiri Jayasekara , Howard Gordon Zolla
发明人： Robert E. Fontana, Jr. , Ying Hong , Wipul Pemsiri Jayasekara , Howard Gordon Zolla
IPC分类号： G11B5/127
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T428/1171
摘要： A method is presented for fabricating a CPP read head having a CPP read head sensor and a hard bias layer which includes forming a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material are deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias material is then deposited on the regions of sensor material and fast-milling dielectric material to form caps on each of these regions. The caps of hard bias material and the masking material are then removed from each of these regions.
摘要翻译：提出了一种用于制造具有CPP读取头传感器和硬偏置层的CPP读取头的方法，该CPP读取头包括在传感器材料区域中形成传感器材料条，以及将快速研磨电介质材料的条带放置在第一和第二快速接头中，研磨与传感器材料区域相邻的介电材料区域。保护层和掩蔽材料层沉积在传感器材料条和快速研磨电介质材料条上，以提供掩蔽区域和暴露区域。提供成形源，例如离子铣削源，其形成暴露的区域。然后将硬偏置材料沉积在传感器材料和快速研磨电介质材料的区域上，以在这些区域中的每一个上形成盖。然后从这些区域中的每一个去除硬偏置材料的盖子和掩模材料。

40. 发明申请

US20100021764A1 METHODS AND SYSTEMS FOR CONFINING SENSE CURRENT OF A CPP READ TRANSDUCER TO THE ABS SIDE OF THE FREELAYER 有权
标题翻译：将CPP读取传感器的感应电流确定到FREELAYER的ABS侧的方法和系统
公开(公告)号：US20100021764A1
公开(公告)日：2010-01-28
申请号：US12180313
申请日：2008-07-25
申请人： Ying Hong , Edward Hin Pong Lee , Aron Pentek , David John Seagle
发明人： Ying Hong , Edward Hin Pong Lee , Aron Pentek , David John Seagle
IPC分类号： G11B5/00 , B44C1/22 , B05D5/12
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3929 , G11B5/398 , G11B2005/3996 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method in one embodiment includes forming a mask above a thin film sensor stack; forming an electrically insulating layer above the mask and sensor stack, the insulating layer having a portion extending along a nonhorizontal end of the mask; selectively removing the insulating layer except for the portion thereof extending along the nonhorizontal end of the mask; removing portions of the sensor stack that are not covered by the mask and the portion of the insulating layer, wherein an end of the portion of the insulating layer positioned away from the mask is about aligned with a back end of the sensor stack after removing the portions thereof; and removing the mask. Additional systems and methods are also presented.
摘要翻译：一个实施例中的方法包括在薄膜传感器堆叠之上形成掩模; 在所述掩模和传感器堆叠之上形成电绝缘层，所述绝缘层具有沿着所述掩模的非水平端延伸的部分; 选择性地除去除了沿着掩模的非水平端延伸的部分之外的绝缘层; 去除未被掩模覆盖的部分和绝缘层的部分，其中绝缘层的远离掩模的部分的一端在移除之后与传感器堆的后端大致对准其部分; 并取下面罩。还介绍了其他系统和方法。

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