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31. 发明申请

US20090072214A1 PHASE-CHANGE MEMORY CELL AND METHOD OF FABRICATING THE PHASE-CHANGE MEMORY CELL 有权
标题翻译：相变存储器单元和相变存储器单元的制作方法
公开(公告)号：US20090072214A1
公开(公告)日：2009-03-19
申请号：US12276905
申请日：2008-11-24
申请人： Jonathan Zanhung Sun , Simone Raoux , Hemantha Wickramasinghe
发明人： Jonathan Zanhung Sun , Simone Raoux , Hemantha Wickramasinghe
IPC分类号： H01L45/00 , H01B13/18 , H01L21/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2213/52 , H01L45/06 , H01L45/1233 , H01L45/1286 , H01L45/144 , H01L45/1625 , H01L45/1666
摘要： A memory cell (and method of fabricating the memory cell) includes a stencil layer having a first opening, a phase-change material layer formed on a first electrode layer, and an electrically conductive layer formed on the first electrode layer, the electrically conductive layer having a pillar-shaped portion which is formed on the phase-change material layer and fills the first opening.
摘要翻译：存储单元（及其制造方法）包括具有第一开口的模版层，形成在第一电极层上的相变材料层和形成在第一电极层上的导电层，导电层具有形成在相变材料层上并填充第一开口的柱状部分。

32. 发明授权

US07501648B2 Phase change materials and associated memory devices 有权
标题翻译：相变材料和相关的存储器件
公开(公告)号：US07501648B2
公开(公告)日：2009-03-10
申请号：US11465077
申请日：2006-08-16
申请人： Yi-Chou Chen , Frances Anne Houle , Simone Raoux , Charles Thomas Rettner , Alejandro Gabriel Schrott
发明人： Yi-Chou Chen , Frances Anne Houle , Simone Raoux , Charles Thomas Rettner , Alejandro Gabriel Schrott
IPC分类号： H01L47/00
CPC分类号： G11B7/2433 , G11B7/00454 , G11B7/2437 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/24322 , H01L27/2463 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1625
摘要： A memory device utilizes a phase change material as the storage medium. The phase change material includes at least one of Ge, Sb, Te, Se, As, and S, as well as a nitride compound as a dopant. The memory device can be a solid-state memory cell with electrodes in electrical communication with the phase change medium, an optical phase change storage device in which data is read and written optically, or a storage device based on the principle of scanning probe microscopy.
摘要翻译：存储器件利用相变材料作为存储介质。相变材料包括Ge，Sb，Te，Se，As和S中的至少一种，以及作为掺杂剂的氮化物化合物。存储器件可以是具有与相变介质电连通的电极的固态存储单元，其中以光学方式读取和写入数据的光学相变存储装置，或者基于扫描探针显微镜原理的存储装置。

33. 发明申请

US20050227177A1 Phase-change memory cell and method of fabricating the phase-change memory cell 失效
标题翻译：相变存储单元和相变存储单元的制造方法
公开(公告)号：US20050227177A1
公开(公告)日：2005-10-13
申请号：US11150184
申请日：2005-06-13
申请人： Jonathan Sun , Simone Raoux , Hemantha Wickramasinghe
发明人： Jonathan Sun , Simone Raoux , Hemantha Wickramasinghe
IPC分类号： G11B7/24 , H01L27/095 , H01L29/06 , H01L29/47 , H01L29/812 , H01L39/00 , H01L45/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2213/52 , H01L45/06 , H01L45/1233 , H01L45/1286 , H01L45/144 , H01L45/1625 , H01L45/1666
摘要： A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.
摘要翻译：存储单元和存储单元的制造方法包括形成在第一电极层上的绝缘层，所述绝缘层具有第一开口，形成在所述绝缘层上的模板层，并且具有第二开口，所述第二开口形成在所述第一开口在第一开口中形成在第一电极层的表面上的相变材料层和导电层，导电层包括形成在模板层上的第一部分，并且限定形成在相位上的第二电极层和第二部分交换材料层。

34. 发明申请

US20050167656A1 PHASE-CHANGE MEMORY CELL AND METHOD OF FABRICATING THE PHASE-CHANGE MEMORY CELL 失效
标题翻译：相变存储器单元和相变存储器单元的制作方法
公开(公告)号：US20050167656A1
公开(公告)日：2005-08-04
申请号：US10766936
申请日：2004-01-30
申请人： Jonathan Sun , Simone Raoux , Hemantha Wichramasinghe
发明人： Jonathan Sun , Simone Raoux , Hemantha Wichramasinghe
IPC分类号： G11B7/24 , H01L27/095 , H01L29/06 , H01L29/47 , H01L29/812 , H01L39/00 , H01L45/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2213/52 , H01L45/06 , H01L45/1233 , H01L45/1286 , H01L45/144 , H01L45/1625 , H01L45/1666
摘要： A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.
摘要翻译：存储单元和存储单元的制造方法包括形成在第一电极层上的绝缘层，所述绝缘层具有第一开口，形成在所述绝缘层上的模板层，并且具有第二开口，所述第二开口形成在所述第一开口在第一开口中形成在第一电极层的表面上的相变材料层和导电层，导电层包括形成在模板层上的第一部分，并且限定形成在相位上的第二电极层和第二部分交换材料层。

35. 发明申请

US20140069577A1 Single-Crystal Phase Change Material on Insulator for Reduced Cell Variability 有权
标题翻译：绝缘体上的单晶相变材料用于降低电池变异性
公开(公告)号：US20140069577A1
公开(公告)日：2014-03-13
申请号：US13611020
申请日：2012-09-12
申请人： Guy Cohen , Simone Raoux
发明人： Guy Cohen , Simone Raoux
IPC分类号： B32B37/14 , B32B38/10
CPC分类号： B32B37/14 , B32B38/10 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1625 , H01L45/1675
摘要： Techniques for producing a single-crystal phase change material and the incorporation of those techniques in an electronic device fabrication process flow are provided. In one aspect, a method of fabricating an electronic device is provided which includes the following steps. A single-crystal phase change material is formed on a first substrate. At least one first electrode in contact with a first side of the single-crystal phase change material is formed. The single-crystal phase change material and the at least one first electrode in contact with the first side of the single-crystal phase change material form a transfer structure on the first substrate. The transfer structure is transferred to a second substrate. At least one second electrode in contact with a second side of the single-crystal phase change material is formed. A single-crystal phase change material-containing structure and electronic device are also provided.
摘要翻译：提供了用于生产单晶相变材料的技术以及将这些技术结合到电子器件制造工艺流程中。一方面，提供一种制造电子设备的方法，其包括以下步骤。在第一基板上形成单晶相变材料。形成与单晶相变材料的第一面接触的至少一个第一电极。与单晶相变材料的第一面接触的单晶相变材料和至少一个第一电极在第一基板上形成转印结构。转移结构被转移到第二衬底。形成与单晶相变材料的第二面接触的至少一个第二电极。还提供了单晶相变材料结构和电子器件。

36. 发明申请

US20090121211A1 Solution-Based Deposition Process for Metal Chalcogenides 有权
标题翻译：金属硫族化合物的溶液沉积工艺
公开(公告)号：US20090121211A1
公开(公告)日：2009-05-14
申请号：US12355189
申请日：2009-01-16
申请人： David B. Mitzi , Simone Raoux
发明人： David B. Mitzi , Simone Raoux
IPC分类号： H01L45/00 , H01L21/06 , H01L29/18
CPC分类号： H01L29/1029 , C01B21/16 , C23C18/04 , C23C18/1204 , C23C18/1275 , H01L29/78681 , Y10T428/31504
摘要： A solution of a hydrazine-based precursor of a metal chalcogenide is prepared by adding an elemental metal and an elemental chalcogen to a hydrazine compound. The precursor solution can be used to form a film. The precursor solutions can be used in preparing field-effect transistors, photovoltaic devices and phase-change memory devices.
摘要翻译：通过向肼化合物中加入元素金属和元素硫族元素，制备金属硫属元素化合物的肼基前体溶液。前体溶液可用于形成膜。前体溶液可用于制备场效应晶体管，光伏器件和相变存储器件。

37. 发明授权

US07494841B2 Solution-based deposition process for metal chalcogenides 有权
标题翻译：金属硫族化物的基于溶液的沉积工艺
公开(公告)号：US07494841B2
公开(公告)日：2009-02-24
申请号：US11432484
申请日：2006-05-12
申请人： David B. Mitzi , Simone Raoux
发明人： David B. Mitzi , Simone Raoux
IPC分类号： H01L21/00
CPC分类号： H01L29/1029 , C01B21/16 , C23C18/04 , C23C18/1204 , C23C18/1275 , H01L29/78681 , Y10T428/31504
摘要： A solution of a hydrazine-based precursor of a metal chalcogenide is prepared by adding an elemental metal and an elemental chalcogen to a hydrazine compound. The precursor solution can be used to form a film. The precursor solutions can be used in preparing field-effect transistors, photovoltaic devices and phase-change memory devices.
摘要翻译：通过向肼化合物中加入元素金属和元素硫族元素，制备金属硫属元素化合物的肼基前体溶液。前体溶液可用于形成膜。前体溶液可用于制备场效应晶体管，光伏器件和相变存储器件。

38. 发明授权

US08114331B2 Amorphous oxide release layers for imprint lithography, and method of use 失效
标题翻译：用于压印光刻的无定形氧化物释放层及其使用方法
公开(公告)号：US08114331B2
公开(公告)日：2012-02-14
申请号：US11968603
申请日：2008-01-02
申请人： Frances A Houle , Simone Raoux
发明人： Frances A Houle , Simone Raoux
IPC分类号： B28B11/08
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S977/887
摘要： Amorphous inorganic oxides are used as release layers on templates for nanoimprint lithography. Such a layer facilitates the release of a template from a cured, hardened composition into which the template has transferred a pattern, by reducing the adhesion energy between the release layer and the cured, hardened composition. The release layer may include one or more metallic or semiconductor elements such as Al, Cu, Co, Sb, Ti, Ta, W and Ge.
摘要翻译：无定形无机氧化物用作纳米压印光刻模板上的剥离层。通过减少脱模层和固化的硬化组合物之间的粘附能，这种层有助于从固化的硬化组合物中释放模板，模板已转移到模板中。剥离层可以包括一种或多种金属或半导体元件，例如Al，Cu，Co，Sb，Ti，Ta，W和Ge。

39. 发明授权

US07910910B2 Phase-change memory cell and method of fabricating the phase-change memory cell 有权
标题翻译：相变存储单元和相变存储单元的制造方法
公开(公告)号：US07910910B2
公开(公告)日：2011-03-22
申请号：US12276905
申请日：2008-11-24
申请人： Jonathan Zanhung Sun , Simone Raoux , Hemantha Wickramasinghe
发明人： Jonathan Zanhung Sun , Simone Raoux , Hemantha Wickramasinghe
IPC分类号： H01L45/00 , H01L21/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2213/52 , H01L45/06 , H01L45/1233 , H01L45/1286 , H01L45/144 , H01L45/1625 , H01L45/1666
摘要： A memory cell (and method of fabricating the memory cell) includes a stencil layer having a first opening, a phase-change material layer formed on a first electrode layer, and an electrically conductive layer formed on the first electrode layer, the electrically conductive layer having a pillar-shaped portion which is formed on the phase-change material layer and fills the first opening.
摘要翻译：存储单元（及其制造方法）包括具有第一开口的模版层，形成在第一电极层上的相变材料层和形成在第一电极层上的导电层，导电层具有形成在相变材料层上并填充第一开口的柱状部分。

40. 发明授权

US07488967B2 Structure for confining the switching current in phase memory (PCM) cells 失效
标题翻译：将开关电流限制在相位存储器（PCM）单元中的结构
公开(公告)号：US07488967B2
公开(公告)日：2009-02-10
申请号：US11100312
申请日：2005-04-06
申请人： Geoffrey W. Burr , Chung Hon Lam , Simone Raoux , Stephen M. Rossnagel , Alejandro G. Schrott , Jonathan Z. Sun , Hemantha K. Wickramasinghe
发明人： Geoffrey W. Burr , Chung Hon Lam , Simone Raoux , Stephen M. Rossnagel , Alejandro G. Schrott , Jonathan Z. Sun , Hemantha K. Wickramasinghe
IPC分类号： H01L29/02
CPC分类号： H01L45/1683 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/144
摘要： Disclosed are a phase change memory cell and a method of forming the memory cell. The memory cell comprises a main body of phase change material connected directly to a bottom contact and via a narrow channel of phase change material to a top contact. The channel is tapered from the top contact towards the main body. A minimum width of the channel has a less than minimum lithographic dimension and is narrower than a width of the main body. Therefore, the channel provides a confined region for the switching current path and restricts phase changing to within the channel. In addition an embodiment of the memory cell isolates the main body of phase change material by providing a space between the phase change material and the cell walls. The space allows the phase change material to expand and contract and also limits heat dissipation.
摘要翻译：公开了相变存储单元和形成存储单元的方法。存储单元包括相变材料的主体，其直接连接到底部触点，并经由相位改变材料的窄通道连接到顶部触点。通道从顶部触点向主体逐渐变细。通道的最小宽度具有小于最小光刻尺寸，并且窄于主体的宽度。因此，该通道为开关电流路径提供一个限制区域，并将相位变化限制在通道内。此外，存储器单元的实施例通过在相变材料和单元壁之间提供空间来隔离相变材料的主体。该空间允许相变材料膨胀和收缩，并且还限制了散热。

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