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31. 发明授权

US07769066B2 Laser diode and method for fabricating same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US07769066B2
公开(公告)日：2010-08-03
申请号：US11600604
申请日：2006-11-15
申请人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
发明人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/3406
摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.
摘要翻译：一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。因此，n型SLS可以以增加的Al百分数生长以增加折射率。这与其他功能一起允许降低阈值电流和电压操作。

32. 发明申请

US20060269390A1 Susceptor for MOCVD reactor 有权
公开(公告)号：US20060269390A1
公开(公告)日：2006-11-30
申请号：US11483387
申请日：2006-07-06
申请人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
发明人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
IPC分类号： B65G49/07
CPC分类号： H01L21/67103 , H01L21/68771
摘要： A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

33. 发明申请

US20060163586A1 LED with current confinement structure and surface roughening 有权
公开(公告)号：US20060163586A1
公开(公告)日：2006-07-27
申请号：US11042030
申请日：2005-01-24
申请人： Steven Denbaars , Shuji Nakamura , Max Batres
发明人： Steven Denbaars , Shuji Nakamura , Max Batres
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/145 , H01L33/22 , H01L33/405
摘要： An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure is generally aligned with the contact on the top and primary emission surface of the LED and substantially prevents the emission of light from the area of the active region that is coincident with the area of the confinement structure and the top-surface contact. The LED may include a roughened emitting-side surface to further enhance light extraction.

34. 发明授权

US08679876B2 Laser diode and method for fabricating same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US08679876B2
公开(公告)日：2014-03-25
申请号：US12826305
申请日：2010-06-29
申请人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
发明人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/3406
摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.
摘要翻译：一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。因此，n型SLS可以以增加的Al百分数生长以增加折射率。这与其他功能一起允许降低阈值电流和电压操作。

35. 发明授权

US08372204B2 Susceptor for MOCVD reactor 有权
标题翻译： MOCVD反应器的受体
公开(公告)号：US08372204B2
公开(公告)日：2013-02-12
申请号：US11483387
申请日：2006-07-06
申请人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
发明人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
IPC分类号： H01L21/00 , C23C14/00 , C23C16/00
CPC分类号： H01L21/67103 , H01L21/68771
摘要： A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.
摘要翻译：公开了一种用于在晶片上的外延层生长期间将半导体晶片保持在MOCVD反应器中的基座。感受体包括由在高温下具有低导热性的材料制成的基座结构，并且具有一个或多个用于容纳传热塞的板孔。插头由高温下具有高导热性的材料制成，以将热量传递到半导体晶片。还公开了一种利用根据本发明的基座的金属有机化学气相沉积反应器。

36. 发明授权

US08366830B2 Susceptor apparatus for inverted type MOCVD reactor 有权
标题翻译：反型MOCVD反应器的受体装置
公开(公告)号：US08366830B2
公开(公告)日：2013-02-05
申请号：US10382198
申请日：2003-03-04
申请人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
发明人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
IPC分类号： H01L21/00 , C23C14/00 , C23C16/00
CPC分类号： C23C16/4584 , C23C16/4581 , C23C16/46 , C30B25/10 , C30B25/12
摘要： The present invention discloses a susceptor mounting assembly for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers, that is particularly adapted for mounting a susceptor in an inverted type reactor chamber. It includes a tower having an upper and lower end with the upper end mounted to the top inside surface of the reactor chamber and a susceptor is arranged at the tower's lower end. Semiconductor wafers are held adjacent to the susceptor such that heat from the susceptor passes into wafers. A second embodiment of a susceptor mounting assembly according to the invention also comprises a tower having an upper and lower end. The tower's upper end is mounted to the top inside surface of the reactor chamber. A susceptor is housed within a cup and the cup is mounted to the tower's lower end.
摘要翻译：本发明公开了一种用于在晶圆上生长外延层期间将半导体晶片保持在MOCVD反应器中的基座安装组件，其特别适用于将基座安装在倒置型反应室中。它包括具有上端和下端的塔，其上端安装到反应室的顶部内表面，并且基座设置在塔的下端。半导体晶片被保持在基座附近，使得来自基座的热量进入晶片。根据本发明的基座安装组件的第二实施例还包括具有上端和下端的塔。塔的上端安装在反应室的顶部内表面。托架被容纳在一个杯子内，杯子安装在塔的下端。

37. 发明申请

US20080061311A1 Led with current confinement structure and surface roughening 有权
标题翻译：带有电流限制结构和表面粗糙
公开(公告)号：US20080061311A1
公开(公告)日：2008-03-13
申请号：US11983515
申请日：2007-11-09
申请人： Steven Denbaars , Shuji Nakamura , Max Batres
发明人： Steven Denbaars , Shuji Nakamura , Max Batres
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/145 , H01L33/22 , H01L33/405
摘要： An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure is generally aligned with the contact on the top and primary emission surface of the LED and substantially prevents the emission of light from the area of the active region that is coincident with the area of the confinement structure and the top-surface contact. The LED may include a roughened emitting-side surface to further enhance light extraction.
摘要翻译：具有p型层的具有相关联的p型接触的LED，具有相关联的n型接触的n型材料层和p型层与n型层之间的有源区的LED包括限制在p型材料层和n型材料层之一内形成的结构。约束结构通常与LED的顶部和主要发射表面上的接触面对准，并且基本上防止了与有源区域的区域的发射，该区域与限制结构和顶面接触的面积一致。 LED可以包括粗糙化的发射侧表面以进一步增强光提取。

38. 发明申请

US20070018183A1 Roughened high refractive index layer/LED for high light extraction 有权
$Roughened high refractive index layer/LED for high light extraction$
标题翻译：用于高光提取的粗化高折射率层/ LED
公开(公告)号：US20070018183A1
公开(公告)日：2007-01-25
申请号：US11187075
申请日：2005-07-21
申请人： Steven Denbaars , James Ibbetson , Shuji Nakamura
发明人： Steven Denbaars , James Ibbetson , Shuji Nakamura
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： H01L33/22 , H01L33/007 , H01L33/0079 , H01L33/42
摘要： A light emitting diode (LED) includes a p-type layer of material, an n-type layer of material and an active layer between the p-type layer and the n-type layer. A roughened layer of transparent material is adjacent one of the p-type layer of material and the n-type layer of material. The roughened layer of transparent material has a refractive index close to or substantially the same as the refractive index of the material adjacent the layer of transparent material, and may be a transparent oxide material or a transparent conducting material. An additional layer of conductive material may be between the roughened layer and the n-type or p-type layer.
摘要翻译：发光二极管（LED）包括p型层材料，n型层材料和p型层与n型层之间的有源层。透明材料的粗糙层与p型材料层和n型材料层相邻。透明材料的粗糙层具有接近或基本上等于与透明材料层相邻的材料的折射率的折射率，并且可以是透明氧化物材料或透明导电材料。附加的导电材料层可以在粗糙层和n型或p型层之间。

39. 发明申请

US20060284206A1 Packaging technique for the fabrication of polarized light emitting diodes 有权
公开(公告)号：US20060284206A1
公开(公告)日：2006-12-21
申请号：US11472186
申请日：2006-06-21
申请人： Hisashi Masui , Shuji Nakamura , Steven DenBaars
发明人： Hisashi Masui , Shuji Nakamura , Steven DenBaars
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , G02F1/133603 , G02F1/13362 , H01L23/544 , H01L33/20 , H01L33/483 , H01L2223/54426 , H01L2223/54473 , H01L2223/54486 , H01L2924/0002 , H01L2924/00
摘要： A polarized light emitting diode (LED) includes a marker indicating a polarization direction. A package for the LED also includes a marker indicating the polarization direction. The markers on the LED and package are used for mutual alignment, wherein the LED is attached in a favorable orientation with respect to a package, so that the polarization direction of emitted light from the package is apparent. The marker is placed on the LED before die separation and the marker is placed on the package before alignment. The marker on the LED comprises a photolithographic pattern, an asymmetric die shape, a notch on the die, or a scratch on the die, while the marker on the package comprises an electrode shape or pattern, an asymmetric package shape, a notch on the package, or a scratch on the package. Finally, the LED or package may be installed in an external circuit or system that also indicates the polarization direction.

40. 发明申请

US20060054905A1 White, single or multi-color light emitting diodes by recycling guided modes 失效
标题翻译：白色，单色或多色发光二极管通过回收引导模式
公开(公告)号：US20060054905A1
公开(公告)日：2006-03-16
申请号：US10938704
申请日：2004-09-10
申请人： Carole Schwach , Claude Weisbuch , Steven DenBaars , Henri Benisty , Shuji Nakamura
发明人： Carole Schwach , Claude Weisbuch , Steven DenBaars , Henri Benisty , Shuji Nakamura
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/08 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/405 , H01L33/505
摘要： A white, single or multi-color light emitting diode (LED) includes a mirror for reflecting photons within the LED; a first active region, adjacent the mirror, including one or more current-injected layers for emitting photons when electrically biased in a forward direction; a second active region, adjacent the first active region, including one or more optically-pumped layers for emitting photons, wherein the optically-pumped layers are optically excited by the photons emitted by the current-injected layers, thereby recycling guided modes; and an output interface, adjacent the second active region, for allowing the photons emitted by the optically-pumped layers to escape the LED as emitted light.
摘要翻译：白色，单色或多色发光二极管（LED）包括用于反射LED内的光子的反射镜; 邻近反射镜的第一有源区，包括一个或多个电流注入层，用于在向前方向上电偏置时发射光子; 邻近第一有源区的第二有源区，包括用于发射光子的一个或多个光学泵浦层，其中光泵浦层被电流注入层发射的光子激发，从而循环引导模式; 以及与第二有源区相邻的输出接口，用于允许由光泵浦层发射的光子作为发射光而逸出LED。

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