会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 36. 发明申请
    • SYSTEM AND METHOD OF PERSONALIZED BROADCASTING SERVICE BASED ON SUBSCRIBER TERMINAL
    • 基于订户终端的个性化广播服务的系统和方法
    • US20110173665A1
    • 2011-07-14
    • US13120591
    • 2009-05-22
    • Jae Chan ShimHo Young SongByung Tak LeeKee Seong Cho
    • Jae Chan ShimHo Young SongByung Tak LeeKee Seong Cho
    • H04N5/445
    • H04H60/72H04H60/06
    • A subscriber terminal-based personalized broadcast service system and method are provided. The subscriber terminal-based personalized broadcast service method includes receiving broadcast program schedule information from a broadcast head-end and receiving content schedule information from at least one content server; creating a personalized channel schedule in which a plurality of broadcast programs and a plurality of contents are arranged according to time with reference to the broadcast program schedule information and the content schedule information; and receiving a broadcast program or a content requested with reference to the personalized channel schedule from the broadcast head-end or the content server. Therefore, it is possible for a subscriber to view various broadcast programs and contents at any desired time. In addition, it is possible for a service provider to reduce the cost for the establishment and maintenance of a server and prevent the quality of broadcast services from deteriorating due to server traffic or load.
    • 提供基于用户终端的个性化广播服务系统和方法。 基于订户终端的个性化广播服务方法包括:从广播头端接收广播节目时间表信息,并从至少一个内容服务器接收内容调度信息; 根据广播节目安排信息和内容节目表信息,根据时间创建多个广播节目和多个内容的个性化频道节目; 以及从广播前端或内容服务器接收参考个性化频道调度请求的广播节目或内容。 因此,用户可以在任何期望的时间查看各种广播节目和内容。 此外,服务提供商可以降低建立和维护服务器的成本,并且防止广播服务的质量由于服务器流量或负载而恶化。
    • 40. 发明申请
    • NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 氮化物半导体发光器件及其制造方法
    • US20090315058A1
    • 2009-12-24
    • US12546896
    • 2009-08-25
    • Jin Bock LEEHo Young Song
    • Jin Bock LEEHo Young Song
    • H01L33/00
    • H01L33/405H01L33/32H01L33/387H01L33/44
    • There are provided a nitride semiconductor light emitting device and a method of manufacturing the same, the device including: a first conductivity type nitride semiconductor layer formed on a substrate; an active layer formed on the first conductivity type nitride semiconductor layer; a second conductivity type nitride semiconductor layer formed on the active layer; a light-transmitting low refractive index layer formed on the second conductivity type nitride semiconductor layer, the light-transmitting low refractive index layer having a plurality of openings through which the second conductivity type nitride semiconductor layer is partially exposed and formed of a material having a refractive index lower than a refractive index of the second conductivity type nitride semiconductor layer; and a high conductivity ohmic contact layer formed on the light-transmitting low refractive index layer and connected to the second conductivity type nitride semiconductor layer through the openings of the light-transmitting low refractive index layer.
    • 提供了一种氮化物半导体发光器件及其制造方法,该器件包括:形成在衬底上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层上的有源层; 形成在有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透光低折射率层,所述透光低折射率层具有多个开口,所述第二导电型氮化物半导体层通过所述多个开口部分地暴露并由具有 折射率低于第二导电型氮化物半导体层的折射率; 以及形成在透光低折射率层上并通过透光低折射率层的开口连接到第二导电型氮化物半导体层的高导电欧姆接触层。