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31. 发明授权

US5552949A Magnetoresistance effect element with improved antiferromagnetic layer 失效
标题翻译：具有改进反铁磁层的磁阻效应元件
公开(公告)号：US5552949A
公开(公告)日：1996-09-03
申请号：US204676
申请日：1994-03-02
申请人： Susumu Hashimoto , Yuzo Kamiguchi , Hitoshi Iwasaki , Atsuhito Sawabe , Masashi Sahashi
发明人： Susumu Hashimoto , Yuzo Kamiguchi , Hitoshi Iwasaki , Atsuhito Sawabe , Masashi Sahashi
IPC分类号： G11B5/39 , H01L43/08
CPC分类号： G11B5/399 , H01L43/08
摘要： An exchange coupled film is presented, which has an antiferromagnetic film being made of N.sub.100-z Mn.sub.z (where N is at least one selected from the group consisting of Cu, Ru, Rh, Re, Pd, Pt, Ag, Au, Os, and Ir; and 24.ltoreq.z.ltoreq.75) and having a tetragonal crystalline structure or being made of Cr.sub.100-x M.sub.x (where M is at least one selected from the group consisting of elements of group 3b of periodic table, Cu, Ru, Rh, Re, Pt, Pd, Ag, Au, Os, Ir, Mn, Fe, Co, and V; and x is in the range of 0
摘要翻译：提出了一种交换耦合膜，其具有由N100-zMnz（其中N是选自由Cu，Ru，Rh，Re，Pd，Pt，Ag，Au，Os和...组成的组中的至少一种）的反铁磁膜 Ir;和24 75），并且具有四方晶系结构或由Cr100-xMx（其中M是选自元素周期表第3b族元素中的至少一种，Cu，Ru ，Rh，Re，Pt，Pd，Ag，Au，Os，Ir，Mn，Fe，Co和V; x在0

32. 发明授权

US5493465A Magnetoresistance effect element and magnetic recording apparatus 失效
标题翻译：磁电阻效应元件和磁记录装置
公开(公告)号：US5493465A
公开(公告)日：1996-02-20
申请号：US209927
申请日：1994-03-14
申请人： Yuzo Kamiguchi , Susumu Hashimoto , Atsuhito Sawabe , Hitoshi Iwasaki , Masashi Sahashi
发明人： Yuzo Kamiguchi , Susumu Hashimoto , Atsuhito Sawabe , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , H01L43/08
摘要： A magnetoresistance effect element has a pair of ferromagnetic layers with a middle non-magnetic metallic layer interposed therebetween. The middle non-magnetic metallic layer has lamination structure of non-magnetic metallic thin films formed of at least two kinds of non-magnetic metallic materials. In the lamination structure of the non-magnetic metallic thin film, Fermi energies of the non-magnetic metallic thin films disposed on interface sides of the ferromagnetic layers has a value closer to a Fermi energy in a direction of spin whose electron spin dependent mean free path is long among Fermi energies of the ferromagnetic layers. A non-magnetic metallic thin film is disposed between such two non-magnetic metallic thin films. Difference in Fermi energy between non-magnetic metallic thin films made of two kinds of non-magnetic metallic materials is 0.5 eV or more. By the use of such a middle non-magnetic metallic layer, while the thickness thereof is as thin as possible, exchange coupling between ferromagnetic layers can be small. Thus, resistance change sensitivity can be enhanced.
摘要翻译：磁阻效应元件具有介于其间的中间非磁性金属层的一对铁磁层。中间非磁性金属层具有由至少两种非磁性金属材料形成的非磁性金属薄膜的叠层结构。在非磁性金属薄膜的层压结构中，设置在铁磁层的界面侧上的非磁性金属薄膜的费米能量在旋转方向具有更接近费米能量的值，其电子自旋依赖平均自由度在铁磁层的费米能量之间的路径很长。这种非磁性金属薄膜之间设有非磁性金属薄膜。由两种非磁性金属材料制成的非磁性金属薄膜之间的费米能的差异为0.5eV以上。通过使用这样的中间非磁性金属层，虽然其厚度尽可能薄，铁磁层之间的交换耦合可以很小。因此，可以提高电阻变化灵敏度。

33. 发明授权

US07738220B1 Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 失效
标题翻译：磁阻效应元件，磁头，磁头组件，磁存储系统
公开(公告)号：US07738220B1
公开(公告)日：2010-06-15
申请号：US11779034
申请日：2007-07-17
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： G11B5/39
CPC分类号： B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B5/66 , G11B2005/3996 , Y10T428/1121
摘要： A magnetoresistance effect element, comprising a nonmagnetic spacer layer, first and second ferromagnetic layers separated by the nonmagnetic spacer layer, the first ferromagnetic layer having a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field, the magnetization of the first ferromagnetic layer freely rotating in a magnetic field signal, a magnetoresistance effect-improving layer comprising a plurality of metal films and disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic spacer layer and the magnetoresistance effect-improving layer, one of the plurality of metal films disposed in contact with the first ferromagnetic layer contains metal element of not solid solution with metal element of the first ferromagnetic layer and a nonmagnetic underlayer or a nonmagnetic protecting layer disposed in contact with the magnetoresistance effect-improving layer so that the magnetoresistance effect-improving layer is disposed between the first ferromagnetic layer and the nonmagnetic underlayer or the nonmagnetic protecting layer.
摘要翻译：一种磁阻效应元件，包括非磁性间隔层，由非磁性间隔层隔开的第一和第二铁磁层，第一铁磁层具有相对于第二铁磁层在零施加磁场的磁化方向的一个角度的磁化方向，在磁场信号中自由旋转的第一铁磁层的磁化，包含多个金属膜并与第一铁磁层接触设置的磁阻效应改善层，使得第一铁磁层设置在非磁性间隔层和设置成与第一铁磁层接触的多个金属膜中的一个的磁阻效应改善层包含不是第一铁磁层的金属元素的非固溶金属元素和非磁性底层或与非磁性保护层接触的非磁性保护层磁阻使得磁阻效应改善层设置在第一铁磁层和非磁性底层或非磁性保护层之间。

34. 发明授权

US07375405B2 Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element 有权
标题翻译：磁阻效应元件，磁头和使用巨磁阻效应元件的磁存储系统
公开(公告)号：US07375405B2
公开(公告)日：2008-05-20
申请号：US11079322
申请日：2005-03-15
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： H01L29/82 , H01L43/00 , G11B5/127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： A magnetoresistance effect (MR) device incorporating a spin valve film, and a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device, wherein the magnetization direction of a free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. A pinned magnetic layer includes a pair of ferromagnetic films antiferromagnetically coupled to each other via a coupling film existing therebetween. The magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer is maintained, and a nonmagnetic high-conductivity layer is disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.
摘要翻译：包含自旋阀膜的磁阻效应（MR）装置，以及包含MR装置的磁头，磁头组件和磁记录/再现系统，其中自由层的磁化方向与磁化强度成一定角度当施加的磁场为零时，其中第二铁磁层的方向。钉扎磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。构成构成被钉扎磁性层的一对强磁性膜中的任一个的磁化方向被保持，并且非磁性高电导率层与第一铁磁层相邻的第一铁磁层相邻的一侧设置在与第一铁磁层接触的一侧相反的一侧具有非磁性间隔层。利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

35. 发明申请

US20050152077A1 Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus 有权
标题翻译：磁阻器件，磁阻磁头和磁记录再现装置
公开(公告)号：US20050152077A1
公开(公告)日：2005-07-14
申请号：US11072270
申请日：2005-03-07
申请人： Hiromi Yuasa , Masatoshi Yoshikawa , Yuzo Kamiguchi , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hiromi Yuasa , Masatoshi Yoshikawa , Yuzo Kamiguchi , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/012 , G11B5/39 , H01F10/32 , H01L43/10
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3906 , G11C11/16 , H01F10/324 , H01F10/3268 , H01L43/10 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12465 , Y10T428/12868 , Y10T428/12917 , Y10T428/12951 , Y10T428/265 , Y10T428/32
摘要： A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic (where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.
摘要翻译：磁阻装置包括磁化固定层，磁化自由层，形成在磁化固定层和磁化自由层之间的非磁性中间层，以及允许感测电流在基本垂直于堆叠平面的方向上流动的电极，包括磁化钉扎层，非磁性中间层和无磁化层。磁化固定层和无磁化层中的至少一个基本上由二元或三元合金形成，由二元或三元合金表示，其由式Fe / SUB>（其中a + b + c = 100at％，a≤75at％，b <= 75at％，c <= 63at％），或者由具有体心立方晶体结构。

36. 发明授权

US06690553B2 Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus 失效
标题翻译：磁电阻效应装置，磁头，磁记录/再现头和磁存储装置
公开(公告)号：US06690553B2
公开(公告)日：2004-02-10
申请号：US09837373
申请日：2001-04-19
申请人： Hitoshi Iwasaki , Yuzo Kamiguchi , Hiromi Fuke , Kazuhiro Saito , Masashi Sahashi
发明人： Hitoshi Iwasaki , Yuzo Kamiguchi , Hiromi Fuke , Kazuhiro Saito , Masashi Sahashi
IPC分类号： G11B5139
CPC分类号： H01F10/3268 , B82Y10/00 , B82Y25/00 , G11B5/09 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01L27/222 , H01L43/08
摘要： A magnetoresistance effect device comprises a magnetic multi-layer film having at least an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film, and a second ferromagnetic film formed in the order on the front surface portion of the substrate, the magnetic multi-layer film having giant magnetoresistance effect, at least the second ferromagnetic film having a shape corresponding to a magnetic field detecting portion. The bias magnetic field applying films are disposed on a conductive film of the magnetic multi-layer film at outer portions of both edge portions of the magnetic field detecting portion of the magnetoresistance effective film. Alternatively, the second ferromagnetic film has a first portion corresponding to the magnetic field detecting portion and a second portion corresponding to the outer portions of both the edge portions of the magnetic field detecting portion, the film thickness of the second portion being smaller than the film thickness of the first portion. The bias magnetic field applying films are formed at the outer portions of both the edge portions of the magnetic field detecting portion of the second ferromagnetic film. With the reversely structured magnetoresistance effect film and the laminate positions of the bias magnetic field applying films, in addition to suppressing the reproduction fringe and Barkhausen noise, the decrease of contact resistance, the suppression of insulation detect, and good linear response characteristic can be accomplished.
摘要翻译：磁阻效应器件包括至少具有反铁磁膜，第一铁磁膜，非磁性膜和在衬底的前表面部分上依次形成的第二铁磁膜的磁性多层膜，磁性多层膜至少第二铁磁膜具有与磁场检测部分对应的形状。偏磁场施加膜在磁阻效应膜的磁场检测部分的两个边缘部分的外部部分设置在磁性多层膜的导电膜上。或者，第二铁磁膜具有对应于磁场检测部分的第一部分和对应于磁场检测部分的两个边缘部分的外部的第二部分，第二部分的膜厚度小于膜第一部分的厚度。偏磁场施加膜形成在第二铁磁膜的磁场检测部分的两个边缘部分的外部。利用反向结构的磁阻效应膜和偏置磁场施加膜的叠层位置，除了抑制再生条纹和巴克豪森噪声之外，还可以实现接触电阻的降低，绝缘检测的抑制和良好的线性响应特性。

37. 发明授权

US06368706B1 Magnetoresistance effect element 失效
公开(公告)号：US06368706B1
公开(公告)日：2002-04-09
申请号：US09111884
申请日：1998-07-08
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/12458 , Y10T428/12875 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.

38. 发明授权

US6159593A Magnetoresistance effect element 失效
公开(公告)号：US6159593A
公开(公告)日：2000-12-12
申请号：US61070
申请日：1998-04-16
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/12458 , Y10T428/12875 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.

39. 发明授权

US06088195A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US06088195A
公开(公告)日：2000-07-11
申请号：US827122
申请日：1997-03-27
申请人： Yuzo Kamiguchi , Kazuhiro Saito , Hideaki Fukuzawa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
发明人： Yuzo Kamiguchi , Kazuhiro Saito , Hideaki Fukuzawa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G01R33/09 , G11B5/39 , G11C11/15 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/16 , H01F10/18 , H01F10/187 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/3281 , H01L43/08 , G11B2005/3996 , G11B5/3916 , G11B5/3932 , G11B5/3967 , H01F10/3295
摘要： A magnetoresistance effect element is provided with a laminated film which is composed of a first ferromagnetic conductive layer, a non-magnetic conductive layer superposed on the first ferromagnetic film, and a second ferromagnetic conductive layer superposed on the non-magnetic conductor layer, and which is provided with a pair of electrodes formed on the laminated film, wherein at least one of the first and second magnetic conductive layers comprises at least a first ferromagnetic layer and a second ferromagnetic film, for example, Co alloy films whose directions of axis of easy magnetization are different from each other. Furthermore, this element is a magnetoresistance effect element provided with a spin valve film having a non-magnetic layer disposed between a first magnetic layer composed of a laminated film of such a ferromagnetic film as a Co based magnetic alloy and a soft magnetic layer, and a second magnetic layer, wherein the soft magnetic layer is composed of a soft magnetic material laminated film of a soft magnetic material film of one kind or soft magnetic material films of two or more kinds, and values of their magnetization M.sub.s (T), film thickness d(nm), and anisotropic magnetic field H.sub.k (Oe) satisfy .SIGMA.(M.sub.s .times.d.times.H.sub.k)>30(Tnm Oe).
摘要翻译：磁阻效应元件设置有由第一铁磁性导电层，叠置在第一铁磁膜上的非磁性导电层和叠加在非磁性导体层上的第二铁磁性导电层构成的层叠膜，设置有形成在层压膜上的一对电极，其中第一和第二导电层中的至少一个至少包括第一铁磁层和第二铁磁膜，例如Co合金膜的方向的轴线方向磁化彼此不同。此外，该元件是具有自旋阀膜的磁阻效应元件，该自旋阀膜具有设置在由作为Co基磁性合金的这种铁磁膜的层叠膜构成的第一磁性层和软磁性层之间的非磁性层，以及第二磁性层，其中软磁性层由一种软磁性材料膜或两种或多种软磁性材料膜的软磁性材料层压膜及其磁化强度Ms（T），膜厚度d（nm）和各向异性磁场Hk（Oe）满足SIGMA（MsxdxHk）> 30（Tnm Oe）。

40. 发明授权

US5949622A Magnetoresistance effect element 失效
公开(公告)号：US5949622A
公开(公告)日：1999-09-07
申请号：US848262
申请日：1997-04-29
申请人： Yuzo Kamiguchi , Akiko Saito , Kazuhiro Saito , Hideaki Fukuzawa , Hitoshi Iwasaki , Masashi Sahashi
发明人： Yuzo Kamiguchi , Akiko Saito , Kazuhiro Saito , Hideaki Fukuzawa , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/00 , G11B5/39 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , H01F10/3268 , H01L43/08 , G11B2005/3996 , G11B5/00 , G11B5/3967
摘要： A magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer formed on a metallic buffer layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the metallic buffer layer and the first magnetic layer. Or a magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer composed of a laminated film of a magnetic undercoat layer and a ferromagnetic layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the middle non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the magnetic undercoat layer and the ferromagnetic layer.

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