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    • 34. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPH06268145A
    • 1994-09-22
    • JP5161593
    • 1993-03-12
    • HITACHI LTD
    • KONO RYUJINISHIMURA ASAOYAGUCHI AKIHIROTANAKA TADAYOSHI
    • H01L23/28H01L23/50
    • PURPOSE:To obtain the title semiconductor device wherein it can prevent the production of a reflow crack by a new mechanism caused by the exfoliation of a die bonding layer by a method wherein a protrusion part is cut and raised from the inside of the protruding region of a tab and the protrusion part is covered with a sealing resin up to its tip end. CONSTITUTION:A semiconductor element 2 is mounted on a tab 11 in a led frame, individual electrodes on the surface of the semiconductor element 2 are connected electrically to individual prescribed leads in the lead frame, and they are sealed with a sealing resin. In such a semiconductor device, the tab 11 protrudes to the periphery from a semiconductor-element mounting region, a protrusion part 15 is cut and raised toward the outer part than the surface and/or the rear surface of the tab 11 from the inside of its protruding region, and the protrusion part 15 is covered with the sealing resin up to its tip part 152. For example, a hook lead 15 as shown in the figure is formed in a part at the outer side than the outer shape of a semiconductor element inside a plane on a tab 11, and it is bent toward the upper part.