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31. 发明授权

US4693759A Method of forming a thin semiconductor film 失效
标题翻译：形成薄半导体膜的方法
公开(公告)号：US4693759A
公开(公告)日：1987-09-15
申请号：US801319
申请日：1985-11-25
申请人： Takashi Noguchi , Hisao Hayashi , Takefumi Ohshima
发明人： Takashi Noguchi , Hisao Hayashi , Takefumi Ohshima
IPC分类号： H01L21/20 , H01L21/265 , H01L29/786 , H01L21/263
CPC分类号： H01L29/78675 , H01L21/2022 , H01L21/26506 , Y10S148/061
摘要： A method of forming a thin semiconductor film has the steps of: forming a thin semiconductor film on a predetermined substrate; implanting predetermined ions in the thin semiconductor film to convert the thin semiconductor film to a thin amorphous semiconductor film; decreasing a thickness of the thin amorphous semiconductor film to a predetermined thickness; and annealing the thin amorphous semiconductor film to cause solid-phase growth. According to this method, a large thin polycrystalline semiconductor film with a crystal grain size larger than the conventional crystal grain size and a good crystal grain orientation can be uniformly formed at a low temperature. It is, therefore, possible to use such a thin semiconductor film to fabricate a thin film semiconductor device with excellent electrical characteristics.
摘要翻译：形成薄的半导体膜的方法具有以下步骤：在预定的衬底上形成薄的半导体膜; 在薄半导体膜中注入预定的离子以将薄的半导体膜转换为薄的非晶半导体膜; 将薄的非晶半导体膜的厚度减小到预定的厚度; 并对薄的非晶半导体膜退火以引起固相生长。根据该方法，可以在低温下均匀地形成结晶粒径大于常规晶粒尺寸和良好晶粒取向的大的多晶半导体薄膜。因此，可以使用这种薄的半导体膜来制造具有优异的电特性的薄膜半导体器件。

32. 发明授权

US4207798A Gas operating system for loading shot shell in an automatic gun 失效
标题翻译：用于在自动喷枪中装载射击炮的气体操作系统
公开(公告)号：US4207798A
公开(公告)日：1980-06-17
申请号：US850202
申请日：1977-11-10
申请人： Hisao Hayashi
发明人： Hisao Hayashi
IPC分类号： F41A5/18 , F41A21/48 , F41D5/10
CPC分类号： F41A21/484 , F41A5/18
摘要： In an automatic gun, the gas pressure generated by the firing of a shot shell is transmitted to the breechblock in the receiver housing by the axial sliding movement of an action bar assembly mounted outside the gunbarrel or the cartridge magazing tube for releasing the breechblock. The action bar assembly includes action bars slidably mounted coaxially with each other and an adjusting spring for arresting the contraction of the span between the stem bodies. A cylinder is fixed to the gunbarrel for receiving the gas pressure from it. The forward end of the action bar assembly extends into the cylinder, while the rearward end passes through a guide hole in the receiver into contact with the front surface of the breechblock. The rearward end has a stopper for restricting the axial movement of the action bar assembly to a predetermined length. A supporting mechanism serves to arrest the rotation of the gunbarrel and the fore-arm by engaging a projection of a predetermined shape, provided at the forward end of the receiver, with cutout portions in the outer periphery of the gunbarrel and the fore-arm.
摘要翻译：在自动喷枪中，通过射击枪壳的射击产生的气体压力通过安装在枪管外部的动作杆组件或药筒喷射管的轴向滑动运动而传递到接收器壳体中的后膛块，用于释放枪闩。动作杆组件包括彼此同轴地可滑动地安装的作用杆，以及调节弹簧，用于阻止杆体在杆体之间的收缩。气缸固定在枪管上，用于接收气体压力。动作杆组件的前端延伸到气缸中，而后端通过接收器中的引导孔与后膛块的前表面接触。后端具有用于将动作杆组件的轴向运动限制到预定长度的止动器。支撑机构用于通过将设置在接收器的前端处的预定形状的突起与枪管和前臂的外周中的切口部分接合来阻止枪管和前臂的旋转。

33. 发明授权

US4185537A Trigger device for automatic gun 失效
标题翻译：触发装置用于自动喷枪
公开(公告)号：US4185537A
公开(公告)日：1980-01-29
申请号：US855667
申请日：1977-11-29
申请人： Hisao Hayashi
发明人： Hisao Hayashi
IPC分类号： F41A19/44 , F41C19/00
CPC分类号： F41A19/44
摘要： A trigger device for automatic gun provided with a connector piece which serves to engage a hammer with a sear and also is interlocked with a trigger to slide forward on a trigger guard inside a receiver in such a way as to disengage the hammer from the sear in direct response to the backward and forward movement of a breech block.
摘要翻译：一种用于自动喷枪的触发装置，其具有连接件，该连接器件用于将锤与冲头接合，并且还与触发器互锁，以在接收器内的触发器保护件上向前滑动，以使锤与锤头脱离直接响应后膛块的向后和向前运动。

34. 发明授权

US4063275A Semiconductor device with two passivating layers 失效
标题翻译：具有两个钝化层的半导体器件
公开(公告)号：US4063275A
公开(公告)日：1977-12-13
申请号：US624889
申请日：1975-10-22
申请人： Takeshi Matsushita , Hisao Hayashi , Teruaki Aoki , Hidenobu Mochizuki
发明人： Takeshi Matsushita , Hisao Hayashi , Teruaki Aoki , Hidenobu Mochizuki
IPC分类号： H01L21/322 , H01L21/314 , H01L21/331 , H01L21/8247 , H01L23/31 , H01L29/06 , H01L29/73 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/861 , H01L29/04 , H01L23/30
CPC分类号： H01L23/3192 , H01L21/314 , H01L23/3157 , H01L23/3171 , H01L2924/0002 , H01L2924/13091 , H01L2924/3025 , Y10S257/905
摘要： A semiconductive device is provided which includes a single crystal substrate. A first insulating layer arranged on one surface of the substrate is of polycrystalline silicon containing oxygen. A second insulating layer formed on the first insulating layer is of polycrystalline silicon containing one of a group consisting of nitrogen, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and silicone resin. The substrate includes at least one PN junction which extends to the said surface of the substrate. A novel method of making is also disclosed.
摘要翻译：提供了包括单晶衬底的半导体器件。布置在基板的一个表面上的第一绝缘层是含氧的多晶硅。形成在第一绝缘层上的第二绝缘层是由氮，Si 3 N 4，Al 2 O 3和有机硅树脂组成的组中的一种的多晶硅。衬底包括延伸到衬底的所述表面的至少一个PN结。还公开了一种新颖的制造方法。

35. 发明授权

US4062707A Utilizing multiple polycrystalline silicon masks for diffusion and passivation 失效
标题翻译：利用多个多晶硅掩模进行扩散和钝化
公开(公告)号：US4062707A
公开(公告)日：1977-12-13
申请号：US654598
申请日：1976-02-02
申请人： Hidenobu Mochizuki , Teruaki Aoki , Takeshi Matsushita , Hisao Hayashi , Masanori Okayama
发明人： Hidenobu Mochizuki , Teruaki Aoki , Takeshi Matsushita , Hisao Hayashi , Masanori Okayama
IPC分类号： H01L29/73 , H01L21/033 , H01L21/22 , H01L21/314 , H01L21/331 , H01L23/29 , H01L29/00 , H01L21/31
CPC分类号： H01L23/291 , H01L21/033 , H01L21/314 , H01L29/00 , H01L2924/0002 , H01L2924/13091 , Y10S438/945
摘要： A method for fabricating a semiconductor device includes the steps of forming a first polycrystalline silicon layer containing oxygen atoms on a semiconductor layer, of forming a second polycrystalline silicon layer containing nitrogen atoms on the first polycrystalline silicon layer, of removing a predetermined part of the first and second polycrystalline silicon layers to form an opening therein, and of diffusing impurity material into the semiconductor layer through the opening in order to form a diffused region. The fabricating process can be remarkably simplified.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体层上形成含有氧原子的第一多晶硅层，在第一多晶硅层上形成含氮原子的第二多晶硅层，去除第一多晶硅层的预定部分和第二多晶硅层，以在其中形成开口，并且通过开口将杂质材料扩散到半导体层中，以形成扩散区域。制造工艺可以非常简化。

36. 发明授权

US08604483B2 Thin film semiconductor device, display device using such thin film semiconductor device and manufacturing method thereof 有权
公开(公告)号：US08604483B2
公开(公告)日：2013-12-10
申请号：US12801791
申请日：2010-06-25
申请人： Hisao Hayashi , Masahiro Fujino , Yasushi Shimogaichi , Makoto Takatoku
发明人： Hisao Hayashi , Masahiro Fujino , Yasushi Shimogaichi , Makoto Takatoku
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/12 , H01L29/42384 , H01L29/66765 , H01L29/78645 , H01L29/78678
摘要： A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors.

37. 发明授权

US07394514B2 Display device and manufacturing method therefor 失效
标题翻译：显示装置及其制造方法
公开(公告)号：US07394514B2
公开(公告)日：2008-07-01
申请号：US11103169
申请日：2005-04-11
申请人： Hisao Hayashi , Shigetaka Toriyama
发明人： Hisao Hayashi , Shigetaka Toriyama
IPC分类号： G02F1/1345
CPC分类号： G02F1/13452 , G02F1/136286 , H05K3/107
摘要： Disclosed herein is a display device including a pair of substrates opposed to each other, a pixel region provided between the substrates, and an external wiring provided on an extension of one of the substrates. The external wiring is disposed in a recess formed on the extension. With this structure, the external wiring provided on the extension can be reliably protected to thereby improve the reliability of the display device.
摘要翻译：本文公开了一种显示装置，其包括彼此相对的一对基板，设置在基板之间的像素区域和设置在其中一个基板的延伸部上的外部布线。外部布线设置在形成在延伸部上的凹部中。利用这种结构，可以可靠地保护设置在延伸部上的外部布线，从而提高显示装置的可靠性。

38. 发明授权

US06653179B1 Method for manufacturing a thin film semiconductor device, method for manufacturing a display device, method for manufacturing a thin film transistors, and method for forming a semiconductor thin film 有权
标题翻译：薄膜半导体器件的制造方法，显示装置的制造方法，薄膜晶体管的制造方法以及半导体薄膜的形成方法
公开(公告)号：US06653179B1
公开(公告)日：2003-11-25
申请号：US09743899
申请日：2001-03-29
申请人： Masahiro Minegishi , Yasushi Shimogaichi , Makoto Takatoku , Hisao Hayashi
发明人： Masahiro Minegishi , Yasushi Shimogaichi , Makoto Takatoku , Hisao Hayashi
IPC分类号： H01L2100
CPC分类号： H01L21/02686 , H01L21/2026 , H01L29/66757 , H01L29/66765
摘要： For manufacturing a thin film semiconductor device, first conducted is a film-making step to make a non-single-crystalline semiconductor thin film (4) on an insulating substrate (1). Next conducted is an annealing step to irradiate laser light (50) for once heating and melting the non-single-crystalline semiconductor thin film (4) and then changing it into a polycrystal in its cooling process. Thereafter, a processing step is conducted to form thin film transistors in an integrated form, which includes the polycrystalline semiconductor thin film (4) as their active layer. For the purpose of ensuring uniform crystallization and enlargement of grain sizes, in the annealing step, by using a laser oscillator (51) including an excimer laser source, the laser light (50) having a pulse width not shorter than 50 ns is shaped by an optical system (53) to form a rectangular cross-sectional area whose sides are not shorter than 10 mm to sequentially irradiate the semiconductor thin film (4).
摘要翻译：为了制造薄膜半导体器件，首先进行在绝缘基板（1）上制造非单晶半导体薄膜（4）的成膜步骤。接下来进行退火步骤，用于在其冷却过程中照射激光（50）一次加热和熔化非单晶半导体薄膜（4），然后将其改变为多晶体。此后，进行处理步骤以形成集成形式的薄膜晶体管，其包括作为其有源层的多晶半导体薄膜（4）。为了确保均匀结晶和晶粒尺寸的扩大，在退火步骤中，通过使用包括准分子激光源的激光振荡器（51），具有不小于50ns的脉冲宽度的激光（50）由光学系统（53），其形成侧面不小于10mm的矩形横截面积，以顺序地照射半导体薄膜（4）。

39. 发明授权

US06410961B1 Thin film semiconductor device and display device 有权
标题翻译：薄膜半导体器件和显示器件
公开(公告)号：US06410961B1
公开(公告)日：2002-06-25
申请号：US09212383
申请日：1998-12-16
申请人： Hisao Hayashi
发明人： Hisao Hayashi
IPC分类号： H01L29786
CPC分类号： H01L27/12 , H01L27/1203 , H01L29/41733 , H01L29/78645
摘要： A thin film semiconductor device comprising an insulating substrate, a plurality of thin film transistors integrated on the insulating substrate, each thin film transistor including a gate electrode, a gate insulating film, a semiconductor thin film and an interlayer insulating film which are laminated in this order from the lower side, and the semiconductor thin film being formed with a channel region confronting the gate electrode, and a source region and a drain region which are located at both sides of the channel region, and a conductor film which is formed on the surface of the interlayer insulating film so as to be overlapped with the channel region. A display device having a pair of insulating substrates, electrooptical material held in the gap between the insulating substrates, a counter electrode formed in one of the insulating substrates, and a plurality of pixel electrodes and a plurality of thin film transistors which are integrated on the other insulating substrate.
摘要翻译：一种薄膜半导体器件，包括绝缘衬底，集成在绝缘衬底上的多个薄膜晶体管，每个薄膜晶体管包括栅电极，栅极绝缘膜，半导体薄膜和层间绝缘膜，层压在该并且半导体薄膜形成有面对栅电极的沟道区域和位于沟道区域两侧的源极区域和漏极区域以及形成在沟道区域上的导体膜层间绝缘膜的表面与沟道区重叠。一种显示装置，具有一对绝缘基板，保持在绝缘基板之间的间隙中的电光材料，形成在一个绝缘基板中的对置电极，以及多个像素电极和多个薄膜晶体管，其他绝缘基板。

40. 发明授权

US06396079B1 Thin film semiconductor device having a buffer layer 失效
标题翻译：具有缓冲层的薄膜半导体器件
公开(公告)号：US06396079B1
公开(公告)日：2002-05-28
申请号：US08730015
申请日：1996-10-11
申请人： Hisao Hayashi , Yasushi Shimogaichi , Keiji Kato
发明人： Hisao Hayashi , Yasushi Shimogaichi , Keiji Kato
IPC分类号： H01L2976
CPC分类号： H01L29/78603 , H01L29/78606
摘要： A thin film semiconductor device having improved operating characteristics and reliability of a thin film transistor formed on a glass substrate. The thin film semiconductor device has a thin film transistor 3 formed on a glass substrate 1 containing alkali metal. The surface of the glass substrate 1 is covered by a buffer layer 2. The thin film transistor 3 formed on this buffer layer 2 has a polycrystalline semiconductor thin film 4 as an active layer. The buffer layer 2 includes at least a silicon nitride film and protects the thin film transistor 3 from contamination by alkali metals such as Na and has a thickness such that it can shield the thin film transistor 3 from an electric field created by localized alkali metal ions (Na+).
摘要翻译：一种薄膜半导体器件，其具有改进的在玻璃衬底上形成的薄膜晶体管的工作特性和可靠性。薄膜半导体器件具有形成在含有碱金属的玻璃基板1上的薄膜晶体管3。玻璃基板1的表面被缓冲层2覆盖。形成在该缓冲层2上的薄膜晶体管3具有作为活性层的多晶半导体薄膜4。缓冲层2至少包括氮化硅膜，并且保护薄膜晶体管3免受诸如Na之类的碱金属的污染，并且具有这样的厚度，使得其可以将薄膜晶体管3屏蔽在由局部碱金属离子产生的电场（Na +）。

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