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    • 32. 发明授权
    • Ultrasonic treatment apparatus
    • 超音波治疗仪
    • US08251988B2
    • 2012-08-28
    • US11417356
    • 2006-05-03
    • Hiroyuki Takahashi
    • Hiroyuki Takahashi
    • A61B18/04
    • A61B17/22012A61B17/320068A61B2017/00017A61B2017/00482A61B2017/00973
    • An ultrasonic treatment apparatus includes an ultrasonic instrument, a fluid irrigation unit, a fluid suction unit, an ultrasonic driving control unit, and an irrigation/suction control unit. The ultrasonic instrument treats a living-body tissue through ultrasonic vibrations. The fluid irrigation unit supplies a cooling fluid for cooling the ultrasonic instrument to the ultrasonic instrument. The fluid suction unit sucks a cooling fluid irrigated by the fluid irrigation unit to the ultrasonic instrument. The ultrasonic driving control unit controls the driving of ultrasonic vibrations of the ultrasonic instrument. The irrigation/suction control unit sequentially controls the driving of the fluid irrigation unit and the driving of the fluid suction unit in accordance with the output of the ultrasonic driving control unit.
    • 超声波处理装置包括超声波仪器,流体冲洗单元,流体抽吸单元,超声波驱动控制单元和冲洗/抽吸控制单元。 超声波仪器通过超声波振动来治疗生物体组织。 流体冲洗单元提供用于将超声波仪器冷却到超声仪器的冷却流体。 流体抽吸单元将由流体冲洗单元灌注的冷却流体吸入超声波仪器。 超声波驱动控制单元控制超声波仪器的超声波振动的驱动。 冲洗/抽吸控制单元根据超声波驱动控制单元的输出依次控制流体冲洗单元的驱动和流体抽吸单元的驱动。
    • 36. 发明授权
    • Semiconductor integrated circuit having DRAM word line drivers
    • 具有DRAM字线驱动器的半导体集成电路
    • US08036048B2
    • 2011-10-11
    • US12256653
    • 2008-10-23
    • Hiroyuki TakahashiHidetaka Natsume
    • Hiroyuki TakahashiHidetaka Natsume
    • G11C7/00
    • G11C11/4085G11C5/14G11C8/08G11C11/409G11C11/4091
    • A semiconductor integrated circuit according to one aspect of the present invention may includes a plurality of driving circuits to drive a respective plurality of word lines with either a first voltage supplied from a first power supply or a second voltage supplied from a second power supply in accordance with a control signal, and a plurality of gate transistors in each of which a gate is connected to one of the plurality of word lines, and a connection state between a storage node and a bit line is changed based on the voltage provided to the word line connected to the gate. In the semiconductor integrated circuit, a gate oxide film of each of the plurality of gate transistors is thinner than a gate oxide film of each of transistors constituting the plurality of driving circuits.
    • 根据本发明的一个方面的半导体集成电路可以包括多个驱动电路,用于根据第一电源提供的第一电压或从第二电源提供的第二电压驱动相应的多个字线 具有控制信号,以及多个栅极晶体管,其中每个栅极连接到多条字线中的一条字线,并且存储节点和位线之间的连接状态基于提供给字的电压而改变 线连接到门。 在半导体集成电路中,多个栅极晶体管的栅极氧化膜比构成多个驱动电路的晶体管的栅极氧化膜薄。