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    • 31. 发明授权
    • Magneto-resistance effect magnetic head
    • 磁阻效应磁头
    • US5786965A
    • 1998-07-28
    • US829731
    • 1997-03-31
    • Norio SaitoKenichi BabaYutaka Soda
    • Norio SaitoKenichi BabaYutaka Soda
    • G11B5/31G11B5/39
    • G11B5/3954G11B5/3903G11B5/3967
    • A magneto-resistance effect magnetic head in which the MR effects of the two MR thin films of a MR device are balanced for suppressing Barkhausen noise and assuring a stabilized output. Between a lower-layer magnetic shield core and an upper layer magnetic shield core is arranged an MR device, made up of two MR thin films such that a distance d.sub.1 between the lower-layer magnetic shield core and the MR thin film is smaller than a distance d.sub.2 between the upper-layer magnetic shield core and the MR thin film. A film thickness t.sub.1 of the MR thin film towards the lower-layer magnetic shield core is set so as to be thinner than a film thickness t.sub.2 of the MR thin film towards the upper-layer magnetic shield core. Preferably, the relation 0.5 3 holds.
    • 一种磁阻效应磁头,其中MR装置的两个MR薄膜的MR效应被平衡以抑制巴克豪森噪声并确保稳定的输出。 在下层磁屏蔽芯和上层磁屏蔽芯之间布置有由两个MR薄膜构成的MR器件,使得下层磁屏蔽芯和MR薄膜之间的距离d1小于 上层磁屏蔽芯和MR薄膜之间的距离d2。 朝向下层磁屏蔽芯的MR薄膜的膜厚度t1被设定为比MR薄膜朝向上层磁屏蔽芯的膜厚度t2薄。 优选地,关系0.5 3的关系成立。