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    • 31. 发明申请
    • IMAGE PICKUP UNIT, IMAGE PICKUP DEVICE, PICTURE PROCESSING METHOD, DIAPHRAGM CONTROL METHOD, AND PROGRAM
    • 图像拾取单元,图像拾取器件,图像处理方法,膜片控制方法和程序
    • US20130335533A1
    • 2013-12-19
    • US14002028
    • 2012-03-22
    • Tomohiro Yamazaki
    • Tomohiro Yamazaki
    • H04N13/02
    • H04N13/225G03B9/02G03B35/10H01L27/14621H01L27/14625H01L27/14627H04N5/23212H04N5/3696H04N9/045H04N13/218H04N2013/0081
    • The technology relates to an image pickup unit, an image pickup device, a picture processing method, a diaphragm control method, and program that are capable of suppressing deterioration in quality of a stereoscopic picture. A parallax detection pixel 230 receives object light by a plurality of photodetectors covered with one microlens, to generate a signal used for detecting parallax. G pixels 227 and 228, an R pixel 226, and a B pixel 229 each receive the object light to generate a signal used for generating a planar picture. A parallax detection section 320 detects parallax based on the signal generated by the parallax detection pixels 230. A 2D picture generation section 310 generates a planar picture based on a signal generated by picture generation pixels. A 3D picture generation section 330 adjusts a position of each object image included in the planar picture, based on the detected parallax, to generate a stereoscopic picture.
    • 该技术涉及能够抑制立体图像的质量劣化的图像拾取单元,图像拾取装置,图像处理方法,光圈控制方法和程序。 视差检测像素230通过覆盖有一个微透镜的多个光电探测器接收物体光,以产生用于检测视差的信号。 G像素227和228,R像素226和B像素229各自接收对象光以产生用于生成平面图像的信号。 视差检测部320基于由视差检测像素230生成的信号来检测视差。2D图像生成部310基于由图像生成像素生成的信号生成平面图像。 3D图像生成部件330基于检测到的视差来调整包括在平面图像中的每个对象图像的位置,以产生立体图像。
    • 35. 发明申请
    • RANGE SENSOR AND RANGE IMAGE SENSOR
    • 范围传感器和范围图像传感器
    • US20120181650A1
    • 2012-07-19
    • US13498202
    • 2010-11-18
    • Mitsuhito MaseTakashi SuzukiTomohiro Yamazaki
    • Mitsuhito MaseTakashi SuzukiTomohiro Yamazaki
    • H01L27/146
    • H01L27/14643G01S7/4814G01S7/4816G01S7/4863G01S17/89H01L27/14603H01L27/1464
    • A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.
    • 范围图像传感器1设置有具有光入射表面1BK和与光入射表面1BK相对的表面1FT的半导体衬底1A,光栅电极PG,第一和第二栅电极TX1,TX2,第一和第二半导体区域FD1 ,FD2和第三半导体区域SR1。 光栅电极PG设置在表面1FT上。 第一和第二栅电极TX1,TX2设置在光栅电极PG的旁边。第一和第二半导体区域FD1,FD2累积流入各栅极电极TX1,TX2正下方的各个电荷。 第三半导体区域SR1远离第一和第二半导体区域FD1,FD2以及光入射面1BK侧,并且具有与第一和第二半导体区域FD1,FD2相反的导电类型。