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31. 发明授权

US08212879B2 Image stabilization control circuit for imaging apparatus 有权
标题翻译：用于成像设备的图像稳定控制电路
公开(公告)号：US08212879B2
公开(公告)日：2012-07-03
申请号：US12335179
申请日：2008-12-15
申请人： Yasunori Nagata , Tomofumi Watanabe , Hideki Hirayama
发明人： Yasunori Nagata , Tomofumi Watanabe , Hideki Hirayama
IPC分类号： H04N5/228
CPC分类号： H04N5/23248 , G02B27/646 , H04N5/2254
摘要： An internal CPU, a vibration control equalizer for processing an output signal of a vibration detector for detecting vibration of an imaging apparatus and calculating a vibration signal for determining a driving amount for an optical component on the basis of vibration of the imaging apparatus, a position control equalizer for calculating a position signal for determining a driving amount for the optical component on the basis of position of the optical component, and a control switching section for switching between the internal CPU and an external control circuit for the imaging apparatus for control of the vibration control equalizer and the position control equalizer.
摘要翻译：内部CPU，振动控制均衡器，用于处理用于检测成像装置的振动的振动检测器的输出信号，并且基于成像装置的振动计算用于确定光学部件的驱动量的振动信号;位置控制均衡器，用于基于所述光学部件的位置计算用于确定所述光学部件的驱动量的位置信号;以及控制切换部，用于在所述内部CPU与所述摄像装置的外部控制电路之间进行切换，振动控制均衡器和位置控制均衡器。

32. 发明申请

US20100270583A1 MANUFACTURING METHOD OF NITRIDE SEMI-CONDUCTOR LAYER, AND A NITRIDE SEMI-CONDUCTOR LIGHT EMITTING DEVICE WITH ITS MANUFACTURING METHOD 有权
标题翻译：硝酸盐半导体层的制造方法及其制造方法的氮化物半导体发光装置
公开(公告)号：US20100270583A1
公开(公告)日：2010-10-28
申请号：US12622085
申请日：2009-11-19
申请人： Takayoshi Takano , Kenji Tsubaki , Hideki Hirayama , Sachie Fujikawa
发明人： Takayoshi Takano , Kenji Tsubaki , Hideki Hirayama , Sachie Fujikawa
IPC分类号： H01L33/00 , H01L21/04
CPC分类号： H01L21/02458 , H01L21/0237 , H01L21/0242 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L33/007 , H01L33/32
摘要： In a process of fabricating a nitride nitride semi-conductor layer of AlaGabIn(1-a-b)N (0 0), the AlGaInN layer is grown at a growth rate less than 0.09 μm/h according to the metal organic vapor phase epitaxy (MOPVE) method. The AlGaInN layer fabricated by the process in the present invention exhibits a high quality with low defect, and increases internal quantum yield.
摘要翻译：在制备AlaGabIn（1-ab）N（0 0）的氮化氮半导体层的过程中，AlGaInN层以生长根据金属有机气相外延（MOPVE）方法，其速率小于0.09μm/ h。通过本发明的方法制造的AlGaInN层具有低缺陷的高质量，并且提高了内部量子产率。

33. 发明申请

US20100270532A1 NITRIDE SEMI-CONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：硝酸盐半导体发光装置
公开(公告)号：US20100270532A1
公开(公告)日：2010-10-28
申请号：US12621364
申请日：2009-11-18
申请人： Takayoshi Takano , Kenji Tsubaki , Hideki Hirayama , Sachie Fujikawa
发明人： Takayoshi Takano , Kenji Tsubaki , Hideki Hirayama , Sachie Fujikawa
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： A nitride semi-conductor light emitting device has a p-type nitride semi-conductor layer 7, an n-type nitride semi-conductor layer 3, and a light emission layer 6 which is interposed between the p-type nitride semi-conductor layer 7 and the n-type nitride semi-conductor layer 3. The light emission layer 6 has a quantum well structure with a barrier layer 6b and a well layer 6a. The barrier layer 6b is formed of AlaGabIn(1-a-b)N (0 0), and contains a first impurity at a concentration of A greater than zero. The well layer 6a is formed of AlcGadIn(1-c-d)N (0 0), and contains a second impurity at a concentration of B equal to or greater than zero. In the nitride semi-conductor light emitting device of the present invention, the concentration of A is larger than that of B, in order that the barrier layer 6b has a concentration of oxygen smaller than that in the well layer 6a.
摘要翻译：氮化物半导体发光器件具有p型氮化物半导体层7，n型氮化物半导体层3和发光层6，该发光层6介于p型氮化物半导体层 7和n型氮化物半导体层3.发光层6具有阻挡层6b和阱层6a的量子阱结构。阻挡层6b由AlaGabIn（1-a-b）N（0 0）形成，并且含有浓度为大于零的第一杂质。阱层6a由AlcGadIn（1-cd）N（0 0）形成，并且含有浓度为B的第二杂质等于或大于零。在本发明的氮化物半导体发光器件中，为了使阻挡层6b的氧浓度比阱层6a的浓度小，A的浓度大于B的浓度。

34. 发明授权

US07811847B2 Optical semiconductor device and method for manufacturing the same 有权
标题翻译：光半导体装置及其制造方法
公开(公告)号：US07811847B2
公开(公告)日：2010-10-12
申请号：US12055949
申请日：2008-03-26
申请人： Hideki Hirayama , Tomoaki Ohashi , Norihiko Kamata
发明人： Hideki Hirayama , Tomoaki Ohashi , Norihiko Kamata
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/12
摘要： Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate 1, an AlN nucleation layer 3 formed on the sapphire substrate 1, a pulsed supplied AlN layer 5 formed on the AlN nucleation layer 3, and a continuous growth AlN layer 7 formed on the pulsed supplied AlN layer 5. Formed on the continuous growth AlN layer 7 is at least one set of a pulsed supplied AlN layer 11 and a continuous growth AlN layer 15. The AlN layer 3 is grown in an initial nucleation mode which is a first growth mode by using an NH3 pulsed supply method. The pulsed supplied AlN layer 5 is formed by using NH3 pulsed supply in a low growth mode which is a second growth mode that increases a grain size and reduces dislocations and therefore is capable of reducing dislocations and burying the nucleation layer 3. The continuous growth AlN layer 7 is a fast vertical growth mode that improves flatness and suppresses crack occurrences. As examples of the thickness of layers; the pulsed supplied AlN layer 5, 11 is 0.3 μm and the thickness of the continuous growth AlN layer 7, 15 is 1 μm, for example. Characteristics of conditions under which layers are grown are as follows. The AlN layer 3 is grown under a high temperature and a high pressure with a low V-III ratio (less N). The pulsed supplied AlN layer 5 is grown at a low temperature and a low pressure with a high V-III ratio (more N). The continuous AlN layer 7 is grown at a high temperature and a high pressure with a high V-III ratio (Al rich and less N) without using an NH3 pulsed supply AlN growth method.
摘要翻译：由于蓝宝石衬底和III-V族化合物半导体之间的晶格失配很大，所以晶体难以生长。蓝宝石衬底上的高品质AlN缓冲生长结构A包括蓝宝石（0001）衬底1，形成在蓝宝石衬底1上的AlN成核层3，形成在AlN成核层3上的脉冲供应AlN层5和在脉冲供给的AlN层5上形成的连续生长AlN层7.在连续生长AlN层7上形成至少一组脉冲供给的AlN层11和连续生长AlN层15.将AlN层3生长在初始成核模式是通过使用NH 3脉冲供给方法的第一生长模式。脉冲供电的AlN层5是通过使用NH 3脉冲供给形成的，该低生长模式是增加晶粒尺寸并减少位错的第二生长模式，因此能够减少位错并掩埋成核层3.连续生长AlN 层7是快速的垂直生长模式，其提高平坦度并抑制裂纹发生。作为层的厚度的例子; 脉冲供给的AlN层5,11的厚度为0.3μm，连续生长AlN层7,15的厚度例如为1μm。生长层的条件的特征如下。 AlN层3在低V-III比（低N）的高温高压下生长。脉冲供给的AlN层5在V-III比高（N以下）的低温低压下生长。连续的AlN层7在不使用NH 3脉冲供给AlN生长方法的情况下，在高V-III比（Al浓度低于N）的高温高压下生长。

35. 发明申请

US20100124411A1 Image stabilization control circuit and image-capturing device 有权
标题翻译：图像稳定控制电路和图像捕获装置
公开(公告)号：US20100124411A1
公开(公告)日：2010-05-20
申请号：US12591259
申请日：2009-11-13
申请人： Hideki Hirayama
发明人： Hideki Hirayama
IPC分类号： G03B17/00
CPC分类号： G03B5/00 , G03B2217/185 , H04N5/23248 , H04N5/23258
摘要： An image stabilization control circuit of an image-capturing device prevents overflow of data in an integration process performed in a digital signal process on a signal outputted by a gyro-sensor. A gyro-filter receives, as an input, fixed-point format angular velocity data (Dω) obtained by subjecting an output signal from the gyro-sensor to an analog-to-digital conversion. In the gyro-filter, an input format conversion circuit converts from fixed-point format to floating-point format. A camera shake vibration component is obtained from the floating-point format Dω, is integrated, and data (Dθ) corresponding to an oscillation angle is generated. After a centering process is performed, Dθ is converted from floating-point format to fixed-point format by an output format conversion circuit, and outputted from the gyro-filter. A drive signal for driving an image stabilization mechanism is generated on the basis of the data outputted by the gyro-filter.
摘要翻译：图像捕获装置的图像稳定控制电路防止在数字信号处理中对由陀螺仪传感器输出的信号进行的积分处理中的数据溢出。陀螺仪滤波器接收通过对来自陀螺传感器的输出信号进行模数转换而获得的定点格式的角速度数据（Dω）作为输入。在陀螺滤波器中，输入格式转换电路从定点格式转换为浮点格式。从浮点格式Dω获得相机抖动振动分量，被积分，产生与振荡角相对应的数据（D＆amp; L）。执行中心过程后，D＆Thetas; 通过输出格式转换电路从浮点格式转换为定点格式，并从陀螺滤波器输出。基于由陀螺仪滤波器输出的数据，产生用于驱动图像稳定机构的驱动信号。

36. 发明授权

US07675069B2 InAlGaN emitting light in ultraviolet short-wavelength region and process for preparing the same as well as ultraviolet light-emitting device using the same 有权
标题翻译： InAlGaN在紫外线短波长区域中发光，其制备方法以及使用其的紫外线发光元件
公开(公告)号：US07675069B2
公开(公告)日：2010-03-09
申请号：US09790660
申请日：2001-02-23
申请人： Hideki Hirayama , Yoshinobu Aoyagi
发明人： Hideki Hirayama , Yoshinobu Aoyagi
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0075
摘要： For the purpose of emitting light in an ultraviolet short-wavelength region having a wavelength of 360 nm or shorter, it is arranged in InAlGaN in such that a ratio of composition of In is 2% to 20%, a ratio of composition of Al is 10% to 90%, and a total of ratios of composition in In, Al, and Ga is 100%.
摘要翻译：为了在具有360nm以下的波长的紫外线短波长区域内发光，将其配置在InAlGaN中，使得In的组成比为2％〜20％，Al的组成比为 10％〜90％，In，Al，Ga的组成比为100％。

37. 发明申请

US20070077551A1 Sample analyzer 审中-公开
标题翻译：样品分析仪
公开(公告)号：US20070077551A1
公开(公告)日：2007-04-05
申请号：US11542518
申请日：2006-10-03
申请人： Hideki Hirayama
发明人： Hideki Hirayama
IPC分类号： C12Q1/00 , G06F19/00 , C12M3/00
CPC分类号： G01N35/00584 , G01N15/10 , G01N2015/0073 , G01N2015/008 , G01N2015/0084
摘要： A sample analyzer for analyzing samples of a plurality of species of animals, comprising: a display; a memory for storing first icon data representing a first icon and second icon data representing a second icon, the first icon showing a first species of animal and being used for selecting a first analysis for a sample from the first species of an animal, and the second icon showing a second species of animal and being used for selecting a second analysis for a sample from the second species of an animal; a screen displayer for displaying a screen on the display, the screen comprising the first icon; and a change receiver for receiving a change of the first icon on the screen to the second icon is disclosed.
摘要翻译：一种用于分析多种动物的样本的样本分析器，包括：显示器; 用于存储表示第一图标的第一图标数据和表示第二图标的第二图标数据的存储器，所述第一图标示出动物的第一种，并且用于从动物的第一种选择样品的第一分析，显示第二种动物的第二图标，并用于从动物的第二种中选择样品的第二分析; 用于在显示器上显示屏幕的屏幕显示器，所述屏幕包括所述第一图标; 并且公开了一种用于将屏幕上的第一图标的改变接收到第二图标的改变接收器。

38. 发明申请

US20140209857A1 METHOD OF MANUFACTURE FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, WAFER, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：硝基半导体发光元件，波长和氮化物半导体发光元件的制造方法
公开(公告)号：US20140209857A1
公开(公告)日：2014-07-31
申请号：US14130345
申请日：2012-07-05
申请人： Takayoshi Takano , Takuya Mino , Norimichi Noguchi , Kenji Tsubaki , Hideki Hirayama
发明人： Takayoshi Takano , Takuya Mino , Norimichi Noguchi , Kenji Tsubaki , Hideki Hirayama
IPC分类号： H01L33/12 , H01L33/06 , H01L33/00
CPC分类号： H01L33/06 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02661 , H01L33/007 , H01L33/0075 , H01L33/12 , H01L33/32
摘要： In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of MN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.
摘要翻译：一种氮化物半导体发光元件的制造方法，包括：单晶基板; 和AlN层; 和第一导电类型的第一氮化物半导体层; 和由AlGaN基材料制成的发光层; 以及第二导电型的第二氮化物半导体层，形成所述AlN层的步骤包括：向所述反应器供给Al源气体和N源气体以产生具有Al- 极性是单晶衬底表面上的AlN层的一部分; 以及在第一步骤之后将Al源气体和N源气体供应到反应器中以形成AlN层的第二步骤。

39. 发明授权

US08227789B2 Optical semiconductor device and method of manufacturing the same 有权
标题翻译：光半导体装置及其制造方法
公开(公告)号：US08227789B2
公开(公告)日：2012-07-24
申请号：US12550329
申请日：2009-08-28
申请人： Hideki Hirayama , Tomohiko Shibata
发明人： Hideki Hirayama , Tomohiko Shibata
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： Devices and techniques related to UV light-emitting devices that can be implemented in ways that improve the light-emitting efficiency of an UV light-emitting device using a group III nitride semiconductor.
摘要翻译：可以以提高使用III族氮化物半导体的UV发光器件的发光效率的方式实现的与UV发光器件相关的器件和技术。

40. 发明授权

US07856179B2 Image stabilization control circuit and image-capturing device 有权
公开(公告)号：US07856179B2
公开(公告)日：2010-12-21
申请号：US12591259
申请日：2009-11-13
申请人： Hideki Hirayama
发明人： Hideki Hirayama
IPC分类号： G03B17/00 , H04N5/228
CPC分类号： G03B5/00 , G03B2217/185 , H04N5/23248 , H04N5/23258
摘要： An image stabilization control circuit of an image-capturing device prevents overflow of data in an integration process performed in a digital signal process on a signal outputted by a gyro-sensor. A gyro-filter receives, as an input, fixed-point format angular velocity data (Dω) obtained by subjecting an output signal from the gyro-sensor to an analog-to-digital conversion. In the gyro-filter, an input format conversion circuit converts from fixed-point format to floating-point format. A camera shake vibration component is obtained from the floating-point format Dω, is integrated, and data (Dθ) corresponding to an oscillation angle is generated. After a centering process is performed, Dθ is converted from floating-point format to fixed-point format by an output format conversion circuit, and outputted from the gyro-filter. A drive signal for driving an image stabilization mechanism is generated on the basis of the data outputted by the gyro-filter.

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