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31. 发明授权

US5556503A Apparatus for thinning a semiconductor film on an insulating film 失效
标题翻译：用于使绝缘膜上的半导体膜变薄的装置
公开(公告)号：US5556503A
公开(公告)日：1996-09-17
申请号：US534442
申请日：1995-09-27
申请人： Atsushi Ogura
发明人： Atsushi Ogura
IPC分类号： H01L21/306 , H01L21/02 , H01L21/20 , H01L21/304 , H01L21/3063 , H01L21/762 , H01L27/12 , H01L21/00
CPC分类号： H01L21/2007 , H01L21/3063 , H01L21/76251 , Y10S438/977
摘要： In an SOI substrate having a base substrate, an insulating film and a semiconductor active layer, a potential difference is given between the base substrate and an etching solution or among the base substrate, the semiconductor active layer and the etching solution to form a uniform depletion layer on the active layer side from the interface between the insulating film and the active layer. The semiconductor active layer is uniformly thinned down by etching using a solution or by the combination of chemical or electro-chemical surface and etching with the resultant reaction product. In this case, the individual electrodes are provided with seal members to prevent the base substrate electrode and the active layer electrode from contacting the etching solution or the reaction solution due to the etching using the etching solution or the chemical reaction using the reaction solution. According to this invention, therefore, the active layer in, for example, a bonded SOI substrate can be thinned down uniformly at a low cost.
摘要翻译：在具有基底衬底，绝缘膜和半导体有源层的SOI衬底中，在基底衬底和蚀刻溶液之间或基底衬底，半导体有源层和蚀刻溶液之间提供电位差以形成均匀的耗尽在绝缘膜和有源层之间的界面上的有源层侧上的层。通过使用溶液的蚀刻或通过化学或电化学表面和蚀刻与所得反应产物的组合的蚀刻将半导体活性层均匀地减薄。在这种情况下，各个电极设置有密封构件，以防止基底电极和有源层电极由于使用蚀刻溶液的蚀刻或使用反应溶液的化学反应而与蚀刻溶液或反应溶液接触。因此，根据本发明，可以以低成本均匀地减薄例如键合SOI衬底中的有源层。

32. 发明授权

US5427976A Method of producing a semiconductor on insulating substrate, and a method of forming a transistor thereon 失效
标题翻译：在绝缘基板上制造半导体的方法及其上形成晶体管的方法
公开(公告)号：US5427976A
公开(公告)日：1995-06-27
申请号：US857943
申请日：1992-03-26
申请人： Risho Koh , Atsushi Ogura
发明人： Risho Koh , Atsushi Ogura
IPC分类号： H01L21/02 , H01L21/20 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66772 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L29/78621 , H01L29/78654 , H01L29/78678 , Y10S148/026 , Y10S148/053 , Y10S148/164
摘要： In a field intensity relaxation of the drain end of a MOSFET, a projective area is not increased with a reduced electrostatic coupling of the source or drain with the gate. The MOSFET satisfying such condition is fabricated on the SOIS film formed by processes of the lateral vapor phase epitaxial growth and the like. A U-shape low concentration impurity region is provided on a gate electrode through a gate dioxide film and high concentration impurity regions are formed at the tops of protrusions. The gate electrode is embedded in insulation films, and the transistor region is fabricated by the lateral vapor phase epitaxial growth and the like.
摘要翻译：在MOSFET的漏极端的场强弛豫中，投影区域不会随着源极或漏极与栅极的静电耦合减小而增加。满足这种条件的MOSFET在由侧向气相外延生长等的工艺形成的SOIS膜上制造。通过栅极二氧化物膜在栅电极上设置U形低浓度杂质区，在突起的顶部形成高浓度杂质区。栅电极嵌入在绝缘膜中，晶体管区域由横向气相外延生长等制成。

33. 发明授权

US5120611A Metal oxide ceramic composite powder and method of manufacturing the same 失效
标题翻译：金属氧化物陶瓷复合粉末及其制造方法
公开(公告)号：US5120611A
公开(公告)日：1992-06-09
申请号：US565374
申请日：1990-08-09
申请人： Atsushi Ogura
发明人： Atsushi Ogura
IPC分类号： C04B35/01 , C04B35/628 , C04B41/81 , C04B41/87
CPC分类号： C04B35/62886 , C04B35/62805 , C04B35/62826 , C04B41/81 , C04B41/87 , C04B2235/444 , Y10S428/90 , Y10T428/12056
摘要： A metal oxide ceramic composite powder has crystals of a reacted and precipitated metal oxide distributed on fine particles of a ceramic material. The metal oxide is derived from an aqueous solution of metal chloride, which in the presence of a magnetic field, forms a complex ion solution. The complex ion may comprise a proportional blend of metallic and semi-metallic elements to produce specific properties. The complex ion is reacted and precipitated with an alkaline material to deposit a high purity metal oxide on the ceramic material. Each ceramic particle thus has a uniform coating of a high purity metal oxide deposited thereon.
摘要翻译：金属氧化物陶瓷复合粉末具有分布在陶瓷材料微粒上的反应析出的金属氧化物的晶体。金属氧化物衍生自金属氯化物的水溶液，其在磁场存在下形成复合离子溶液。复合离子可以包括金属和半金属元素的比例混合物以产生特定的性质。复合离子用碱性材料反应和沉淀，以在陶瓷材料上沉积高纯度的金属氧化物。因此，每个陶瓷颗粒具有沉积在其上的高纯度金属氧化物的均匀涂层。

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