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31. 发明授权

US06473335B2 MRAM configuration 有权
标题翻译： MRAM配置
公开(公告)号：US06473335B2
公开(公告)日：2002-10-29
申请号：US09898222
申请日：2001-07-03
申请人： Thomas Böhm , Helmut Kandolf , Stefan Lammers
发明人： Thomas Böhm , Helmut Kandolf , Stefan Lammers
IPC分类号： G11C1100
CPC分类号： G11C11/16
摘要： A magneto-resistive random access memory (MRAM) configuration is described in which line driver circuits are respectively assigned via connecting nodes to two memory cell arrays, with the result that the area for the driver circuits can practically be halved. Therefore a space-saving architecture and a more efficient MRAM configuration is obtained.
摘要翻译：描述了一种磁阻随机存取存储器（MRAM）配置，其中线路驱动器电路分别经由连接节点分配给两个存储单元阵列，结果是驱动器电路的面积实际上可以减半。因此，获得节省空间的架构和更有效的MRAM配置。

32. 发明授权

US06472696B1 Memory cell configuration and corresponding production process 失效
标题翻译：内存单元配置及相应的生产流程
公开(公告)号：US06472696B1
公开(公告)日：2002-10-29
申请号：US09645763
申请日：2000-08-25
申请人： Ulrich Zimmermann , Thomas Böhm , Manfred Hain , Armin Kohlhase , Yoichi Otani , Andreas Rusch , Alexander Trüby
发明人： Ulrich Zimmermann , Thomas Böhm , Manfred Hain , Armin Kohlhase , Yoichi Otani , Andreas Rusch , Alexander Trüby
IPC分类号： H01L2710
CPC分类号： H01L27/11273 , H01L27/112
摘要： The memory cell configuration has a large number of memory cells provided in a semiconductor substrate and having bit-line trenches which extend in parallel in the longitudinal direction in the main face of the semiconductor substrate, at the bottoms of which in each case a first conductive region is provided, at the peaks of which in each case a second conductive region of the same conduction type as the first conductive region is provided, and in the walls of which in each case an intermediately located channel region is 0 provided; and having word lines which extend in the transverse direction along the main face of the semiconductor substrate, through specific bit-line trenches, to activate transistors provided there. An additional dopant is introduced into the trench walls of the bit-line trenches which are located between the word lines, in order to increase the corresponding transistor turn-on voltage there to suppress leakage currents.
摘要翻译：存储单元配置具有设置在半导体衬底中的大量存储单元，并且具有在半导体衬底的主面中在纵向方向上平行延伸的位线沟槽，其底部在每种情况下都具有第一导电区域被提供，其峰值在每种情况下具有与第一导电区域相同的导电类型的第二导电区域，并且在其每一种情况下壁的中间位置的沟道区域为0; 并且具有通过特定位线沟槽沿着半导体衬底的主面在横向上延伸的字线，以激活在其中设置的晶体管。另外的掺杂剂被引入位于字线之间的位线沟槽的沟槽壁中，以便在其上增加对应的晶体管导通电压以抑制漏电流。

33. 发明授权

US06415650B1 Method for operating helium leak indicator and the application of this method to helium leak indicators 失效
标题翻译：氦泄漏指示器的操作方法以及该方法应用于氦气泄漏指示器
公开(公告)号：US06415650B1
公开(公告)日：2002-07-09
申请号：US09463245
申请日：2000-01-21
申请人： Thomas Böhm , Rudi Widt
发明人： Thomas Böhm , Rudi Widt
IPC分类号： G01M0320
CPC分类号： G01M3/202
摘要： Method for operating, a helium leak indicator (1) consisting of a helium detector (4) with evacuation devices comprising at least a high-vacuum pump (6), a backing pump (9) and a valve (16) whose level of flow conductance can be adjusted and serves to modulate the through-flow of test gas to be analyzed; in order to influence the sensitivity in a simple manner, the method provides that the modulation properties be changeable in such a manner that the effective pumping capacity at the inlet of the leak indicator is changed by the adjustment of the modulation properties.
摘要翻译：一种用于操作的氦泄漏指示器（1），氦泄漏指示器（1）由氦检测器（4）组成，所述氦检测器（4）具有至少包括高真空泵（6），背泵（9）和阀（16）可以调节电导，并用于调制要分析的试验气体的通流; 为了以简单的方式影响灵敏度，该方法提供了调制特性可以通过调整调制特性来改变泄漏指示器入口处的有效泵送能力而改变的方式。

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