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31. 发明申请

US20120069654A1 MEMORY DEVICE AND METHOD FOR ESTIMATING CHARACTERISTICS OF MULTI-BIT PROGRAMMING 有权
标题翻译：用于估计多位编程特性的存储器件和方法
公开(公告)号：US20120069654A1
公开(公告)日：2012-03-22
申请号：US13303353
申请日：2011-11-23
申请人： Kyoung Lae CHO , Seung-Hwan Song , Yoong Dong Park , Jun Jin Kong , Jae Hong Kim
发明人： Kyoung Lae CHO , Seung-Hwan Song , Yoong Dong Park , Jun Jin Kong , Jae Hong Kim
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C16/32 , G11C16/349 , G11C29/00 , G11C2211/5634
摘要： Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell.
摘要翻译：提供了可以估计多位单元特性的存储器件和/或方法。存储器设备可以包括：多位单元阵列; 监测单元，用于提取从对应于存储在多位单元阵列中的数据的多个阈值电压状态中选择的参考阈值电压状态的时间值的阈值电压变化; 以及估计单元，用于基于所提取的阈值电压变化来估计所述多个阈值电压状态的时间值的阈值电压变化。由此，可以监视存储单元的阈值电压随时间的变化。

32. 发明授权

US08004891B2 Memory device and method of programming thereof 有权
标题翻译：存储器件及其编程方法
公开(公告)号：US08004891B2
公开(公告)日：2011-08-23
申请号：US12453964
申请日：2009-05-28
申请人： Yong June Kim , Kyoung Lae Cho , Jae Hong Kim , Jun Jin Kong , Hong Rak Son
发明人： Yong June Kim , Kyoung Lae Cho , Jae Hong Kim , Jun Jin Kong , Hong Rak Son
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C7/1006
摘要： Example embodiments may provide a memory device and memory data programming method. The memory device according to example embodiments may encode a first data page to generate at least one first codeword and encode a second data page to generate a second codeword. The memory device may generate the first codeword with at least one of a maximum value of a number of successive ones and a second maximum value of a number of successive zeros. The memory device may program the at least one first codeword and the at least one second codeword to a plurality of multi-bit cells.
摘要翻译：示例性实施例可以提供存储器设备和存储器数据编程方法。根据示例性实施例的存储器件可编码第一数据页以产生至少一个第一码字，并对第二数据页进行编码以产生第二码字。存储器装置可以利用连续零个数的最大值和连续零数的第二最大值中的至少一个来生成第一码字。存储器件可以将至少一个第一代码字和至少一个第二代码字编程到多个多位单元。

33. 发明授权

US07924624B2 Memory device and memory programming method 有权
标题翻译：存储器和存储器编程方法
公开(公告)号：US07924624B2
公开(公告)日：2011-04-12
申请号：US12385705
申请日：2009-04-16
申请人： Jae Hong Kim , Kyoung Lae Cho , Dong Hyuk Chae , Yong June Kim
发明人： Jae Hong Kim , Kyoung Lae Cho , Dong Hyuk Chae , Yong June Kim
IPC分类号： G11C16/06
CPC分类号： G11C16/3454 , G11C11/5628 , G11C2211/5621
摘要： Provided are memory devices and memory programming methods. A memory device may include: a multi-bit cell array that includes a plurality of memory cells; a controller that extracts state information of each of the memory cells, divides the plurality of memory cells into a first group and a second group, assigns a first verify voltage to memory cells of the first group and assigns a second verify voltage to memory cells of the second group; and a programming unit that changes a threshold voltage of each memory cell of the first group until the threshold voltage of each memory cell of the first group is greater than or equal to the first verify voltage, and changes a threshold voltage of each memory cell of the second group until the threshold voltage of each memory cell of the second group is greater than or equal to the second verify voltage.
摘要翻译：提供的是存储器件和存储器编程方法。存储器设备可以包括：包括多个存储器单元的多位单元阵列; 提取每个存储单元的状态信息的控制器，将多个存储器单元划分成第一组和第二组，将第一验证电压分配给第一组的存储单元，并将第二验证电压分配给存储单元第二组以及编程单元，其改变第一组的每个存储单元的阈值电压，直到第一组的每个存储单元的阈值电压大于或等于第一验证电压，并且改变每个存储单元的阈值电压直到第二组的每个存储单元的阈值电压大于或等于第二验证电压。

34. 发明申请

US20090296466A1 Memory device and memory programming method 有权
标题翻译：存储器和存储器编程方法
公开(公告)号：US20090296466A1
公开(公告)日：2009-12-03
申请号：US12385705
申请日：2009-04-16
申请人： Jae Hong Kim , Kyoung Lae Cho , Dong Hyuk Chae , Yong June Kim
发明人： Jae Hong Kim , Kyoung Lae Cho , Dong Hyuk Chae , Yong June Kim
IPC分类号： G11C16/02 , G11C16/06
CPC分类号： G11C16/3454 , G11C11/5628 , G11C2211/5621
摘要： Provided are memory devices and memory programming methods. A memory device may include: a multi-bit cell array that includes a plurality of memory cells; a controller that extracts state information of each of the memory cells, divides the plurality of memory cells into a first group and a second group, assigns a first verify voltage to memory cells of the first group and assigns a second verify voltage to memory cells of the second group; and a programming unit that changes a threshold voltage of each memory cell of the first group until the threshold voltage of each memory cell of the first group is greater than or equal to the first verify voltage, and changes a threshold voltage of each memory cell of the second group until the threshold voltage of each memory cell of the second group is greater than or equal to the second verify voltage.
摘要翻译：提供的是存储器件和存储器编程方法。存储器设备可以包括：包括多个存储器单元的多位单元阵列; 提取每个存储单元的状态信息的控制器，将多个存储单元划分为第一组和第二组，将第一验证电压分配给第一组的存储单元，并将第二验证电压分配给存储单元第二组以及编程单元，其改变第一组的每个存储单元的阈值电压，直到第一组的每个存储单元的阈值电压大于或等于第一验证电压，并且改变每个存储单元的阈值电压直到第二组的每个存储单元的阈值电压大于或等于第二验证电压。

35. 发明申请

US20090207671A1 Memory data detecting apparatus and method for controlling reference voltage based on error in stored data 有权
标题翻译：存储器数据检测装置和基于存储数据中的误差来控制参考电压的方法
公开(公告)号：US20090207671A1
公开(公告)日：2009-08-20
申请号：US12216745
申请日：2008-07-10
申请人： Dong Hun Yu , Kyoung Lae Cho , Dong Hyuk Chae , Jun Jin Kong , Jae Hong Kim , Seung-Hwan Song
发明人： Dong Hun Yu , Kyoung Lae Cho , Dong Hyuk Chae , Jun Jin Kong , Jae Hong Kim , Seung-Hwan Song
IPC分类号： G11C7/00 , G11C29/04
CPC分类号： G11C7/1006 , G11C7/14 , G11C11/5642 , G11C29/00 , G11C29/028 , G11C29/42 , G11C29/50 , G11C2211/5634
摘要： Example embodiments may relate to a method and an apparatus for reading data stored in a memory, for example, providing a method and an apparatus for controlling a reference voltage based on an error of the stored data. Example embodiments may provide a memory data detecting apparatus including a first voltage comparator to compare a threshold voltage of a memory cell with a first reference voltage, a first data determiner to determine a value of at least one data bit stored in the memory cell according to a result of the comparison, an error verifier to verify whether an error occurs in the determined value, a reference voltage determiner to determine a second reference voltage that is lower than the first reference voltage based on a result of the verification, and a second data determiner to re-determine the value of the data based on the determined second reference voltage.
摘要翻译：示例性实施例可以涉及用于读取存储在存储器中的数据的方法和装置，例如提供一种基于存储的数据的错误来控制参考电压的方法和装置。示例性实施例可以提供一种存储器数据检测装置，其包括用于将存储器单元的阈值电压与第一参考电压进行比较的第一电压比较器，第一数据确定器，用于根据存储器单元存储的至少一个数据位的值，根据比较结果，用于验证所确定的值是否发生错误验证器，基于验证结果确定低于第一参考电压的第二参考电压的参考电压确定器，以及第二数据确定器，以基于所确定的第二参考电压重新确定数据的值。

36. 发明申请

US20090201729A1 Memory device and memory device heat treatment method 失效
标题翻译：记忆体和记忆体热处理方法
公开(公告)号：US20090201729A1
公开(公告)日：2009-08-13
申请号：US12219104
申请日：2008-07-16
申请人： Seung-Hwan Song , Jun Jin Kong , Jae Hong Kim , Young Hwan Lee , Dong Hyuk Chae , Tae Hun Kim , Kyoung Lae Cho
发明人： Seung-Hwan Song , Jun Jin Kong , Jae Hong Kim , Young Hwan Lee , Dong Hyuk Chae , Tae Hun Kim , Kyoung Lae Cho
IPC分类号： G11C16/04
CPC分类号： G11C16/3418 , G11C7/04 , G11C11/5621 , G11C16/3427 , G11C16/349 , G11C29/00
摘要： A memory device and a memory device heat treatment method are provided. The memory device may include: a non-volatile memory device; one or more heating devices configured to contact with the non-volatile memory device and heat the non-volatile memory device; and a controller configured to control an operation of the one or more heating devices based on operational information of the non-volatile memory device. Through this, it may be possible to improve an available period of the non-volatile memory device.
摘要翻译：提供了一种存储器件和存储器件热处理方法。存储器件可以包括：非易失性存储器件; 配置成与所述非易失性存储器件接触并加热所述非易失性存储器件的一个或多个加热器件; 以及控制器，被配置为基于所述非易失性存储器件的操作信息来控制所述一个或多个加热装置的操作。由此，可以改善非易失性存储器件的可用周期。

37. 发明申请

US20090190397A1 Memory device and data reading method 有权
标题翻译：存储器和数据读取方式
公开(公告)号：US20090190397A1
公开(公告)日：2009-07-30
申请号：US12232138
申请日：2008-09-11
申请人： Kyoung Lae Cho , Donghun Yu , Yoon Dong Park , Jun Jin Kong , Jae Hong Kim , Heeseok Eun
发明人： Kyoung Lae Cho , Donghun Yu , Yoon Dong Park , Jun Jin Kong , Jae Hong Kim , Heeseok Eun
IPC分类号： G11C16/06 , G11C16/00 , G11C7/00
CPC分类号： G11C11/5642 , G11C16/3418 , G11C29/00
摘要： A memory device and a memory data reading method are provided. The memory device may include: a multi-bit cell array; a programming unit that stores N data pages in a memory page in the multi-bit cell array; and a control unit that divides the N data pages into a first group and second group, reads data of the first group from the memory page, and determines a scheme of reading data of the second group from the memory page based on the read data of the first group.
摘要翻译：提供存储器件和存储器数据读取方法。存储器件可以包括：多位单元阵列; 编程单元，其将N个数据页存储在多位单元阵列中的存储器页面中; 以及控制单元，其将N个数据页划分为第一组和第二组，从存储器页面读取第一组的数据，并且基于读取的数据确定从存储器页面读取第二组的数据的方案第一组。

38. 发明申请

US20090185417A1 Apparatus and method of memory programming 有权
标题翻译：存储器编程的装置和方法
公开(公告)号：US20090185417A1
公开(公告)日：2009-07-23
申请号：US12213944
申请日：2008-06-26
申请人： Kyoung Lae Cho , Yoon Dong Park , Jun Jin Kong , Jong Han Kim , Jae Hong Kim , Young Hwan Lee , Heeseok Eun , Seung-Hwan Song
发明人： Kyoung Lae Cho , Yoon Dong Park , Jun Jin Kong , Jong Han Kim , Jae Hong Kim , Young Hwan Lee , Heeseok Eun , Seung-Hwan Song
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C29/00 , G11C2216/14
摘要： A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells.
摘要翻译：提供了存储器编程设备和/或方法。存储器编程装置可以包括数据存储单元，第一计数单元，索引存储单元和/或编程单元。数据存储单元可以被配置为存储数据页。第一计数单元可以被配置为通过基于数据页计数包括在至少一个参考阈值电压状态中的单元的数量来生成索引信息。索引存储单元可以被配置为存储所生成的索引信息。编程单元可以被配置为将数据页存储在数据存储单元中，并将生成的索引信息存储在索引存储单元中。第一计数单元可以将生成的索引信息发送到编程单元。存储器编程装置可以监视存储器单元中阈值电压的分布状态。

39. 发明授权

US08856621B2 Memory controller for nonvolatile memory device, memory system comprising memory controller, and related methods of operation 有权
标题翻译：用于非易失性存储器件的存储器控制器，包括存储器控制器的存储器系统以及相关的操作
公开(公告)号：US08856621B2
公开(公告)日：2014-10-07
申请号：US13606188
申请日：2012-09-07
申请人： Hee Seok Eun , Jae Hong Kim , Hyung Joon Park , Young Kwang Yoo
发明人： Hee Seok Eun , Jae Hong Kim , Hyung Joon Park , Young Kwang Yoo
IPC分类号： G11C29/00 , G11C11/34 , G06F11/10
CPC分类号： G06F11/1072
摘要： A nonvolatile memory device comprises a memory controller having a memory cell status estimator that generates status estimation information indicating the status of a memory cell based on status register data, a coupling group index selector configured to generate a select signal for selecting a page and coupling group index from the status estimation information, and a memory cell status value generator configured to map the status estimation information to the data reliability decision bits and the coupling group index and generate a status value of the memory cell for error correction code decoding.
摘要翻译：非易失性存储器件包括存储器控制器，其具有存储单元状态估计器，其基于状态寄存器数据产生指示存储器单元的状态的状态估计信息;耦合组索引选择器，被配置为生成用于选择页面的选择信号和耦合组以及存储单元状态值生成器，被配置为将状态估计信息映射到数据可靠性判定位和耦合组索引，并且生成用于纠错码解码的存储单元的状态值。

40. 发明授权

US09088871B2 Behavioral pattern collecting apparatus, and behavioral pattern analyzing system and method using the same 有权
标题翻译：行为模式收集装置和行为模式分析系统及其使用方法
公开(公告)号：US09088871B2
公开(公告)日：2015-07-21
申请号：US13586213
申请日：2012-08-15
申请人： Chan Kyu Park , Jae Hong Kim , Cheon Shu Park , Sang Seung Kang , Min Su Jang , Joo Chan Sohn
发明人： Chan Kyu Park , Jae Hong Kim , Cheon Shu Park , Sang Seung Kang , Min Su Jang , Joo Chan Sohn
IPC分类号： H04M11/04 , H04W4/02 , H04W4/22 , G08B21/04
CPC分类号： H04W4/027 , G08B21/0423 , H04W4/90
摘要： Disclosed are a wearable behavioral pattern collecting apparatus for generating collected information by analyzing a behavioral pattern of a wearer, and generating and thereby transmitting emergency call information when an emergency situation occurs, a network including a repeater to transmit information received from the behavioral pattern collecting apparatus to a remote monitoring server, and a behavioral pattern analyzing system and method for transmitting information on an emergency accident and a position of the wearer to a corresponding institution or a corresponding person in charge when an emergency situation such as a falling accident or the emergency accident occurs by observing a change in the behavioral pattern of the wearer.
摘要翻译：公开了一种穿戴式行为模式收集装置，用于通过分析穿戴者的行为模式来产生收集的信息，并且在紧急情况发生时生成并从而发送紧急呼叫信息，包括用于发送从行为模式收集装置接收的信息的中继器的网络远程监控服务器，以及在诸如坠落事故或紧急事故等紧急情况的情况下将关于紧急事故和穿戴者的位置的信息发送给相应机构或相应负责人的行为模式分析系统和方法通过观察穿戴者的行为模式的变化而发生。

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