专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明专利

JPH0232436A BUFFER MEMORY 失效
公开(公告)号：JPH0232436A
公开(公告)日：1990-02-02
申请号：JP18182988
申请日：1988-07-22
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： SAIE YASUHIKO , FUKUDA HIROSHI , KIKUCHI TAKASHI , OOISHI KANJI , HATANO SUSUMU , AOKI HIROKAZU , UCHIYAMA KUNIO
IPC分类号： G06F12/08
摘要： PURPOSE:To access a non-cache area at a high speed by providing a bypass to bypass a buffer on a bus in a cache memory and when an address signal on the bus is in the set address range, switching the bus to a bypass side. CONSTITUTION:When an address on an address bus 17a is in the address range set to a register 18, a storing buffer 15 is separated from an address bus 17a and a data bus 17, a microprocessor MPU bus 22 and a memory bus 21 are directly combined and as such, change-over switches 20a-20d are switched. Thus, the MPU can access a main memory without waiting for the decision of the hit and mis-hit in the cache memory. Thus, the area of a part of the main memory can be operated as a non-cache area which can be directly accessed by the MPU and the throughput of the system can be improved.

32. 发明专利

JPH01235100A SEMICONDUCTOR MEMORY DEVICE 失效
公开(公告)号：JPH01235100A
公开(公告)日：1989-09-20
申请号：JP6265788
申请日：1988-03-15
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： FUKUDA HIROSHI , SAIE YASUHIKO , KIKUCHI TAKASHI , OOISHI TSURATOKI , HATANO SUSUMU , UCHIYAMA KUNIO , AOKI HIROKAZU
IPC分类号： G11C11/413 , G06F12/16 , G11C11/34 , G11C29/00 , G11C29/42
摘要： PURPOSE:To improve the processing speed of a CPU by sending the data read out of a memory part to the external part regardless of the presence or absence of a parity error and then transmitting a parity error signal. CONSTITUTION:The data read out of a directory memory 1 and a data memory 2 are sent to the external part regardless of the presence or absence of a parity error. At the same time, a high-speed mode is set for transmission of parity error signals ERR1 and ERR2 in the next bus cycle. Thus a system can be actuated in a bus cycle equal to a case where no parity check is performed even though the parity check is actually carried out as long as a high-speed mode is set. As a result, the processing speed of a CPU is improved.

33. 发明专利

JPH01183136A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH01183136A
公开(公告)日：1989-07-20
申请号：JP813288
申请日：1988-01-18
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： SAIE YASUHIKO
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/336 , H01L29/78
摘要： PURPOSE:To prevent disconnection of a conductive layer of a secondary layer and to improve electric reliability of a semiconductor integrated circuit device by providing an intermediate conductive layer in a recess between a main surface of a semiconductor substrate and a conductive layer of the secondary layer within a region specified by a conductive layer of a primary layer isolated each other and by providing a buried member in the recess in a region excepting the above. CONSTITUTION:In a semiconductor integrated circuit device, an intermediate conductive layer 11A which is electrically isolated from a gate electrode 5 in a recess formed in a step shape of the gate electrode 5 between a wiring 14 and a semiconductor region 9 within a region specified by the gate electrode 5, and a buried member 11B is provided in a recess formed in a step shape of the gate electrode 5 in a region whereon the intermediate conductive layer 11A is not provided. The step shape formed by the gate electrode 5 is moderated by the intermediate conductive layer 11A and the buried member 11B. In this way, the foundation shape of the wiring 14 (the surface of an interlayer insulation film 12) is flattened thus preventing disconnection of the wiring 14 and improving electric reliability of a semiconductor integrated circuit device.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式