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31. 发明专利

JPS6326542B2 失效
公开(公告)号：JPS6326542B2
公开(公告)日：1988-05-30
申请号：JP14615881
申请日：1981-09-18
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , YATSUNO KOMEI
IPC分类号： H01L21/52 , H01L21/58 , H01L23/15

32. 发明专利

JPS6257239A ALUMINUM NITRIDE SUBSTRATE FOR MOUNTING SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS6257239A
公开(公告)日：1987-03-12
申请号：JP19590485
申请日：1985-09-06
申请人： HITACHI LTD
发明人： TAKAHASHI MASAAKI , KURIHARA YASUTOSHI , INOUE KOICHI , SAWAHATA MAMORU , YATSUNO KOMEI
IPC分类号： H01L23/15 , H05K1/02 , H05K1/03 , H05K3/22
摘要： PURPOSE:To improve corrosion behavior of an aluminum nitride substrate with respect to water and to make electric characteristics excellent, by forming a protecting layer on the surface of the substrate other than a metallized-layer forming part, with regard to the metarial of a ceramic substrate for mounting semiconductor integrated circuit such as an LSI and a VLSI. CONSTITUTION:A metallized layer is formed on the surface of a substrate constituting a sintered body, whose main component is aluminum nitride. In this device, a metallizing paste is applied on the surface of the aluminum nitride substrate. Then temperature is increased in a weak oxidizng atmosphere. On the surface of the substrate other than the paste forming part, an aluminum oxide layer and/or a boehmite layer is formed. Then, the device is burned in an reducing atmosphere of the paste. Thereafter, the temperature is decreased in the same atmosphere. It is desirable that a material, which is decomposed in heating in the weak oxidizing atmosphere and discharges oxygen, is included in the paste. It is desirable that the aluminum oxide and/or the boehmite layer has the thickness of less than 2mum, i.g., 0.1-1mum.

33. 发明专利

JPS6217091A METALLIZATION FOR ALUMINUM NITRIDE BODY 失效
公开(公告)号：JPS6217091A
公开(公告)日：1987-01-26
申请号：JP15590285
申请日：1985-07-17
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , INOUE KOICHI , TAKAHASHI MASAAKI , SAWATOMI MAMORU , YATSUNO KOMEI
IPC分类号： C04B41/88

34. 发明专利

JPS61245557A RESISTANCE CIRCUIT ELEMENT 失效
公开(公告)号：JPS61245557A
公开(公告)日：1986-10-31
申请号：JP8711885
申请日：1985-04-23
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , INOUE KOICHI , SAWAHATA MAMORU , YATSUNO KOMEI , SASAKI TOSHIMI , HIROSE KAZUHIRO
IPC分类号： H01L27/01 , H01C7/00
摘要： PURPOSE:To integrate fine resistor groups having excellent heat-dissipating properties and superior characteristics by irradiating an insulating sintered body, which mainly comprises SiC and to which at lest one kind of Be, BeO and BN is added, by a laser, selectively heating it and improving quality thereof. CONSTITUTION:The surface of a base body 30 consisting of a SiC sintered body containing 1.5wt% BeO is irradiated by laser beams, the properties of an original insulator are enhanced to a resistor, a resistance layer 10 is shaped selectively, and a conductor layer 20 is formed at a terminal. With the SiC sintered body, SiC crystal grains 301 are surrounded by regions 302 having high Be concentration, and the regions 302 display high resistance. One part of the SiC crystal grains in a shallow layer section is sublimated through the projection of laser beams, and one part is changed into free Si, free C, SiO, CO, SiN. CO is scattered and one part of the regions 302 is sublimated and one part remains, and the resistance layer 10 constituted by BeO, BeN or free Be is shaped onto the SiC grains 301 in a deep layer and the regions 302. According to the constitution, the resistance layer having excellent heat-dissipating properties and superior performance can be formed with the high degree of integration.

35. 发明专利

JPS61159457A HIGHLY THERMALLY CONDUCTIVE COMPOSITION 失效
公开(公告)号：JPS61159457A
公开(公告)日：1986-07-19
申请号：JP25629585
申请日：1985-11-15
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , YATSUNO KOMEI
IPC分类号： C08L101/00 , C08K3/00 , C08K3/22 , C08K3/24 , C08K3/28 , C08K3/34 , H01L23/29 , H01L23/31
摘要： PURPOSE:To provide the title compsn. having a low coefficient of thermal expansion and suitable for use in covering semiconductor devices, by dispersing sintered silicon carbide powder contg. beryllium oxide and/or boron nitride in an org. high-molecular material. CONSTITUTION:Sintered silicon carbide powder having a resistivity of 10 OMEGAcm or above and a coefficient of thermal expansion of 0.7cal/cm.S. deg.C or above, contg. at least 1wt% beryllium oxide and/or boron oxide is dispersed in an org. high-molecular material such as silicone resin or epoxy resin to obtain highly thermally conductive compsn. 16, 17. A subassembly obtd. by integrating diode pellets 14a, 14b and metallic leads 15a-c serving as electrodes as well as electric terminals is placed on an insulator 13 formed by providing an aluminum fin 11 on a recessed bottom 12. The circumference of the insulator 13 and the subassembly is filled with the compsn. 16, 17 and the compsn. is cured.

36. 发明专利

JPS61141146A Integrated circuit device 失效
标题翻译：集成电路设备
公开(公告)号：JPS61141146A
公开(公告)日：1986-06-28
申请号：JP26290484
申请日：1984-12-14
申请人： Hitachi Ltd
发明人： KURIHARA YASUTOSHI , SAWAHATA MAMORU , INOUE KOICHI , YATSUNO KOMEI
IPC分类号： H01L21/58 , H01L21/60 , H05K3/34
CPC分类号： H01L24/81 , H01L2224/16 , H01L2224/81801 , H01L2924/014 , H01L2924/14 , H05K3/3431
摘要： PURPOSE:To contrive improvement in the characteristics of life by performing the prescribed configuration control on the necessary region by a method wherein a semiconductor substrate and a dielectric substance (substrate for package) are electrically connected, and the shape of the side face projection of a solder microscopic pole-like material is differentiated by the microscopic material located in the center part of the coupled surface of the semiconductor substrate and the microscopic material located on the circumferential part. CONSTITUTION:A semiconductor element 10 consists of a silicon substrate of the size of 13X13mm, for example, having the LSI chips wherein solid state circuits constituting a processor to be used for a large-sized electronic computer are formed. A number of terminal parts 15 are arranged on one surface of the semiconductor element 10 in matrix form in accordance with the prescribed pattern. A dielectric substrate 12 consists of a multilayer wiring substrate having alumina, for example, as the base material, and on the surface of the substrate 12 opposing to the substrate 10, a terminal parts 16 are arranged in matrix form at the position opposing to the terminal parts 15. The microscopic pole-like material 11 of solder is fused by heating after it is arranged between the terminal parts 15 and 16, it is brought back to normal temperature after it is alloyed on the first and the second coupling interfaces, and the electrical connection and the mechanical coupling are performed between the semiconductor substrate 10 and the dielectric substrate.
摘要翻译：目的：通过以半导体基板和电介质（包装用基板）电连接的方式对所需区域进行规定的配置控制来改善寿命特性，并且将侧面突起的形状焊料微观极性材料由位于半导体衬底的耦合表面的中心部分和位于周向部分上的微观材料的微观材料区分开。构成：半导体元件10由13X13mm尺寸的硅衬底构成，例如具有构成用于大型电子计算机的处理器的固态电路的LSI芯片。根据规定的图案，多个端子部15以矩阵形式设置在半导体元件10的一个表面上。电介质基板12由具有例如基材的氧化铝的多层布线基板构成，并且在与基板10相对的基板12的表面上，端子部16以与矩形形式相对的位置配置端子部分15.焊料的微观极性材料11在布置在端子部分15和16之后通过加热而熔化，在合金化在第一和第二耦合接口上之后将其恢复到常温，以及在半导体衬底10和电介质衬底之间进行电连接和机械耦合。

37. 发明专利

JPS6124255A Structure for semiconductor package 失效
标题翻译：半导体封装结构
公开(公告)号：JPS6124255A
公开(公告)日：1986-02-01
申请号：JP14429184
申请日：1984-07-13
申请人： Hitachi Ltd
发明人： SOGA TASAO , KURIHARA YASUTOSHI , YATSUNO KOMEI , NAKANO FUMIO
IPC分类号： H01L23/28 , H01L23/31 , H01L25/065
CPC分类号： H01L23/3121 , H01L25/0655 , H01L2224/16225 , H01L2224/32245 , H01L2224/48 , H01L2224/48247 , H01L2224/48465 , H01L2224/73204 , H01L2224/73265 , H01L2224/92125 , H01L2924/10253 , H01L2924/15151 , H01L2924/15174 , H01L2924/15312 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： PURPOSE:To enable to mount plural semiconductor chips with a high resistance of thermal fatigue in high density by a method wherein gaps are provided on a resin, with which the chips are sealed, in such a way that four pieces of chips are partitioned in a quadrangular form as a unit of one block. CONSTITUTION:Numerous pieces of Si chips 1 are mounted on an organic multilayer substrate 2 and when the Si chips are coated with a resin 8, crevices 23 or gaps are provided on the resin 8 in such a way that four pieces of chips are partitioned in a quadrangular form as a unit of one block. By this way, the mutual forces to act between the chips are eliminated to prevent the generation of a crack and a highly reliable package can be obtained. The way to make the crevices include a way to insert a Teflon frame in the crevices, a way to mechanically cut the crevices using a dicer after the sealing, a way to cut them using a laser beam and so forth.
摘要翻译：目的：为了能够以高密度安装具有高耐热性疲劳的多个半导体芯片，通过这样一种方法，其中在芯片被密封的树脂上提供间隙，使得四片芯片被分割成四边形作为一个单位的单位。构成：将多个Si芯片1安装在有机多层基板2上，并且当Si芯片涂覆有树脂8时，在树脂8上设置裂缝23或间隙，使得四个芯片被分割作为一个块的单位的四边形。通过这种方式，消除了在芯片之间作用的相互作用力以防止产生裂纹，并且可以获得高可靠性的封装。形成缝隙的方式包括将铁氟龙框架插入缝隙中的方式，在密封后使用切割机机械切割缝隙的方式，使用激光束切割它们的方法等。

38. 发明专利

JPS60157284A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60157284A
公开(公告)日：1985-08-17
申请号：JP1182884
申请日：1984-01-27
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , MINAGAWA TADASHI , YATSUNO KOUMEI , HIROSE KAZUHIRO , SHINOHARA KOUICHI , YASUDA TOMIROU , SAWAHATA MAMORU , KUSHIMA TADAO
IPC分类号： H01L21/52 , H01L21/58 , H01L33/30 , H01L33/40 , H01L33/62 , H01L33/64 , H01S5/00 , H01S5/02 , H01S5/022
摘要： PURPOSE:To obtain the titled device of stable performance to be manufactured with good yield by a method wherein a section of solder adhesion in such a manner that the side surface of a semiconductor substrate is almost even with that of an intermediate member is provided on the intermediate member, and a region imparted with the wetting property to solder is provided in the neighborhood of the adhesion part of the side surface of the intermediate member. CONSTITUTION:The semiconductor laser substrate 2 is die-bonded on the intermediate member 3 with Au-Sn solder, and the main surface of the substrate 2 is provided with an electrode layer whose uppermost layer is an Au layer. Besides, the intermediate member 3 is adhered on a supporting member 1 with Pb-Sn series solder. A conduction path constituent member 5 is connected to the other conductive member from the electrode layer in the upper side of the substrate 2, and the other electrode in the lower side of the substrate 2 is connected to the other conductive member via copper relay plate 6. The intermediate member 3 has a metallized layer 33 on its side surface 31 and is imparted with the wetting property to solder. This enables the solder to flow out of the layer 33, producing no swelling at the end part because of sagging. Therefore, the cut-off of a laser light path or the short circuit of a P-N junction does not occur.

39. 发明专利

JPS59183993A Brazing structure 失效
标题翻译：制动结构
公开(公告)号：JPS59183993A
公开(公告)日：1984-10-19
申请号：JP5896383
申请日：1983-04-04
申请人： Hitachi Ltd
发明人： KURIHARA YASUTOSHI , MINAGAWA TADASHI , YATSUNO KOUMEI
IPC分类号： B23K1/19 , B23K35/00 , B23K35/26 , H01L21/52 , H01L21/60
CPC分类号： H01L24/83 , B23K35/001 , H01L24/29 , H01L24/32 , H01L2224/32245 , H01L2224/8319 , H01L2224/83801 , H01L2924/01029 , H01L2924/0105 , H01L2924/01082 , H01L2924/0132 , H01L2924/15747
摘要： PURPOSE:To obtain excellent heat radiating effect without the possibility of denaturation and breakage in an adhered part by adhering electrically conductively two members having different coeffts. of thermal expansion via a brazing member having small heat resistance. CONSTITUTION:A semiconductor device 2 is adhered by means of a brazing material layer 3 consisting of a lead-tin alloy contg. copper on a metallic supporting member 1. The layer 3 is required to be of such material which fixes the device 3, acts as a path to conduct electricity and heat and is rigid enough to obviate plastic deformation arising from the thermal strain generated by a heat cycle. The layer 3 is also required to disperse adequately the thermal strain concentrating in said layer to the member 1 and the device 2 to eliminate the possibility of generating denaturation and breakage.
摘要翻译：目的：为了获得优异的散热效果，通过将导电性不同的两个部件组装在一起，不会使粘附部分发生变性和断裂的可能性。通过具有小耐热性的钎焊构件进行热膨胀。构成：半导体器件2通过由铅 - 锡合金组成的钎料层3粘结。金属支撑构件1上的铜。层3需要是固定装置3的材料，用作传导电和热的路径，并且刚性足以消除由热产生的热应变引起的塑性变形周期。层3还需要将集中在所述层中的热应变充分地分散到构件1和装置2上，以消除产生变性和断裂的可能性。

40. 发明专利

JPS58135658A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS58135658A
公开(公告)日：1983-08-12
申请号：JP1752682
申请日：1982-02-08
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , MINAGAWA TADASHI , YATSUNO KOUMEI
IPC分类号： H01L23/34 , H01L23/373
摘要： PURPOSE:To prevent the deformation and thermal fatigue of the titled semiconductor device by a method wherein a compound metal plate, consisting of a flat type first metal member and a ring-shaped second metal member which is formed in one body with the first metal member at the circumferential part, is used as the metal plate to be located between a semiconductor and an insulating member, thereby enabling to reduce the thermal distortion of the semiconductor device. CONSTITUTION:A metal supporting member 11 is a compound metal plate which is formed in one body using an iron-36% nickel plate 112 in such a manner that it is surrounding the circumferential part of a steel plate 111 by performing a cold rolling method. An insulated member 12 of alumina plate is adhered to the surface of the metal supporting member 11 using a solder layer 28, and a compound metal plate 13 is adhered using a solder layer 29. The compound metal plate 13 is the iron and 36% nickel plate 132 which is formed in one body using a cold rolling method in such a manner that the plate is surrounding the circumferential part of a copper plate 131, and the apparent expansion coefficient is coordinated to the value between the thermal expansion coefficient of alumina and the thermal expansion coefficient of silicon which is the material used in the semiconductor substrate. The circuit shown in the diagram 2 is formed on the compound metal plate.

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