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    • 35. 发明专利
    • ELECTRONIC DESK COMPUTER
    • JPS5635256A
    • 1981-04-07
    • JP10913379
    • 1979-08-29
    • HITACHI LTD
    • HARA HIDEO
    • G06F15/02G06F3/14G06F3/147
    • PURPOSE:To eliminate a conversion for reading of the display, by displaying an integer-fold figure of 3 or 4 or the character, the voice and others corresponding to these figures at the exponent part. CONSTITUTION:In case the result of operation is displayed through the mantissa part A composed of e.g. 8 digits and the exponent part A composed of 2 digits each, the display at the part B is limited to an integer-fold value of e.g. 3. And the segment displaying the decimal point is provided to each digit, and the digit of the decimal point is decided according to the display at the part A. In the case of display of e.g. 1,2345678X10 , 03 is displayed at the part B along 123,45678 is displayed at the part A respectively. Also an integer-fold figure of 3 is set to the part B, and thus the display is possible with the character corresponding to the figure. In addition, the compound voice circuit is provided to carry out the display via the voice. And in case a calculation is carried out in the Japanese yen, the exponent part can be displayed with an integer-fold figure of 4.
    • 37. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPH0855483A
    • 1996-02-27
    • JP21317894
    • 1994-08-15
    • HITACHI LTD
    • KATO KEIIWAMURA MASAHIROOGUCHI SATOSHIHARA HIDEO
    • G11C11/419G11C11/409
    • PURPOSE:To maintain low power consumption of a device and to increase operation speed by controlling a driving current in each mode of a normal operation state, a standby state and a stop state of a differential circuit. CONSTITUTION:In a normal operation mode of a memory with a logical function and in a selecting state in a read-mode of a corresponding memory module, a driving current value supplied to differential circuits DC1, 2 through an internal node n1 is made large by large conductance of MOSFET NE, NF. Also, in a normal operation mode and in a non-selection state of a corresponding memory module or in a write-mode and in a selection mode, conductance of FETNC is restricted, and a supplied driving current value of the circuits DC1, 2 is made small. When a memory with a logical function is made a standby mode, an internal control signal RMO and a standby signal STB both are made a low level, a driving path of a sense amplifier consisting of the circuits DC1, 2 is cut off and a current is not made to flow. Thereby, low power consumption of the memory module and the memory are maintained and operation speed is increased.