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31. 发明专利

JPS62291961A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS62291961A
公开(公告)日：1987-12-18
申请号：JP13491586
申请日：1986-06-12
申请人： HITACHI LTD
发明人： AKIMOTO HAJIME , ANDO HARUHISA , OZAKI TOSHIBUMI , ONO HIDEYUKI , OBA SHINYA , NAKAI MASAAKI , KOIKE NORIO
IPC分类号： H01L27/14 , H01L27/148 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/374
摘要： PURPOSE:To prevent a noise charge from diffusing for restraining a smear phenomenon from occuring by a method wherein specified conductivity type semiconductor layers of respective photodiodes and CCD channels are separatedly formed. CONSTITUTION:P type semiconductor regions 4-1, 4-2 of n type regions 1-1, 1-2 forming photodiodes and the other p type semiconductor regions 5-1, 5-2 of n type regions 3-1, 3-2 of vertical CCD channels are separately formed. The regions 4-1, 4-2 is provided with lower concentration and deeper P well than those of the regions 5-1, 5-2. In such a constitution, a noise charge generated in the regions 4-l, 4-2 by oblique light or reflected light from SiO2 layers 7-1, 7-2, etc., is hardly diffused so that the smear phenomenon blurring an image by the noise charge may be restrained from occuring.

32. 发明专利

JPS62185366A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS62185366A
公开(公告)日：1987-08-13
申请号：JP2586186
申请日：1986-02-10
申请人： HITACHI LTD
发明人： AKIMOTO HAJIME , OZAKI TOSHIBUMI , NAKAI MASAAKI , SEKIHARA KENSUKE , SASANO AKIRA
IPC分类号： H01L27/148 , H01L27/14
摘要： PURPOSE:To obtain a high sensitivity and high resolution image pickup device by producing two-dimensional image information as a one-dimensional electric signal by photodetectors arranged in one-dimensional state on a photodetecting surface, and processing the signal to obtain a two-dimensional image. CONSTITUTION:An image to be picked up is focused by an optical system 12 on a photodetecting surface 13. The image is photoelectrically converted, transferred, A/D-converted by an A/D converter 15, and input to a signal processor 1 as a one-dimensional electric signal. Two-dimensional image signal is output by a signal processing to transfer means 18, and output through an amplifier or a buffer 5 from an image pickup device. According to this method, many photodetecting rows are provided with large aperture rate together with high resolution. Therefore, the high sensitivity image pickup device can be obtained. In case of general object to be picked up, a CT method is used for the processor 11, the number of sampling and extracting to be executed during half rotation may be increased to raise the resolution in a circumferential direction.

33. 发明专利

JPS6223159A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS6223159A
公开(公告)日：1987-01-31
申请号：JP16184385
申请日：1985-07-24
申请人： HITACHI LTD
发明人： KOIKE NORIO , ANDO HARUHISA , NAKAI MASAAKI , OZAKI TOSHIBUMI , SASANO AKIRA , OBA SHINYA , KUBO SEIJI
IPC分类号： H01L27/146 , H01L27/14 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/372 , H04N5/374
摘要： PURPOSE:To enable the blooming to be inhibited by forming an electrode connected to an emitter in an electrode body having light transmission and desired electric resistance. CONSTITUTION:An electrode 13 being in contact with an emitter consists of an electrode body having light transmission and electric resistance, and light transmittance depends upon the film thickness of polycrystalline silicon and transmittance is increased with the thinning of film thickness when using polycrystalline silicon, etc. When film thickness is selected in approximately 50nm, transmittance can be elevated up to 0-80%. A resistance value inhibiting currents at a desired value can be selected by the quantity of an impurity doped to polycrystalline silicon regarding the electric resistance of the electrode. An impurity layer 14 need not be prepared previously in a pre-process, and can be manufactured simultaneously in a manufacturing process for the electrode 13, thus forming the impurity layer according to a self-alignment system.

34. 发明专利

JPS627155A SOLID-STATE IMAGE SENSOR 失效
公开(公告)号：JPS627155A
公开(公告)日：1987-01-14
申请号：JP14473085
申请日：1985-07-03
申请人： HITACHI LTD
发明人： OZAKI TOSHIBUMI , ANDO HARUHISA , KOIKE NORIO , NAKAI MASAAKI
IPC分类号： H01L27/148 , H01L27/14 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/3728 , H04N5/378
摘要： PURPOSE:To remove a smear component by forming a vertical CCD shift register for transferring smear charge near a signal transferring vertical CCD shift register, and taking a difference of the outputs fed from the both registers. CONSTITUTION:A smear signal sorted by a sampling circuit 21 for sorting a signal and a smear signal is input through a delay circuit 22 and an attenuator 26 to a differential circuit 23. A signal stored by the sampling circuit is input directly to the differential circuit. When the delay time of the circuit 22 is set at td, the phase of a smear signal S is displaced by td to coincide with the phase of a signal Q+S'. Accordingly, the difference of the both signals is obtained by the circuit 23 to obtain a true light signal Q in whicha the smear component is removed at an output 24.

35. 发明专利

JPS61253857A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61253857A
公开(公告)日：1986-11-11
申请号：JP9543485
申请日：1985-05-07
申请人： HITACHI LTD
发明人： KUME HITOSHI , HAGIWARA TAKAAKI , WADA YASUO , NAKAMURA TORU , NAKAI MASAAKI
IPC分类号： H01L27/10 , G11C11/34 , H01L21/265 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
摘要： PURPOSE:To substantially increase the depletion-layer capacitance per unit occupying area, by providing an N-type semiconductor region and a P-type semiconductor region doped with a higher concentration of impurity than a substrate, such that the junction therebetween is buried deep within the substrate and has fine undulations. CONSTITUTION:Thermal oxide films 32 and 33 are grown on the surface of a silicon substrate 31. Subsequently, a shallow As-ion-implanted layer 35 and a shallow B-ion-implanted layer 36 are provided. After a resist mask 34 is removed and a mask 37 with an opening is formed, As ions and B ions are implanted through the opening to form an As-ion-implanted region 38 and a B-ion-implanted region 39, respectively, within the silicon substrate 31. The mask 37 for ion implantation is removed. A dielectric film 40 with a MOS-type capacitance, an upper electrode 41, a gate oxide film 42, a gate electrode 43, a source diffused layer 44 and a drain diffused layer 45 are provided, respective ly, by known technique of oxidation, deposition, processing, ion implantation and high-temperature heat treatment. According to this method, the capacitance of the depletion layer ancillary to the junction region can be increased with a preset dimension in the occupying area thereof.

36. 发明专利

JPS61220579A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS61220579A
公开(公告)日：1986-09-30
申请号：JP6067585
申请日：1985-03-27
申请人： HITACHI LTD
发明人： NAKAI MASAAKI , ONO HIDEYUKI , OZAKI TOSHIBUMI , ANDO HARUHISA , KOIKE NORIO , OBA SHINYA
IPC分类号： H01L27/14 , H01L27/146 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/374 , H04N9/07
摘要： PURPOSE:To avoid a sampling operation and to realize a device with high S/N by separating directly and outputting to >=3 horizontal signal output lines when two lines of picture signals are read out. CONSTITUTION:It is assumed that filters are four colors (A, B, C and D) and odd lines (2n-1, 2n+1,...) are selected. In the horizontal scanning period of (2n-1)th line, the signal of an A color and the signal of a B color are taken out as outputs O1 and and O2 respectively through horizontal signal output lines 36a and 36b. In the horizontal scanning period of the next (2n+1)th line, the signals of a C color and a D color are taken out respectively as the outputs O1 and O2 through horizontal signal output lines 36c and 36d. And by operating the signals (Qa and Qb) of the (2n-1)th line that are delayed in a 1H period and the signals (Qc and Qd) of the (2n+1)th line, chrominance components (R and B) are generated. Thus, the signal of each filter can be taken out with a base band and a sampling is not needed.

37. 发明专利

JPS61193484A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61193484A
公开(公告)日：1986-08-27
申请号：JP3262185
申请日：1985-02-22
申请人： HITACHI LTD
发明人： ANDO HARUHISA , OZAKI TOSHIBUMI , OBA SHINYA , NAKAI MASAAKI
IPC分类号： H01L29/762 , H01L21/339 , H01L29/76 , H01L29/768 , H01L29/772
摘要： PURPOSE:To enable to set a gate potential of an FGA and to attain low noise, by connecting the gate of the FGA to the gate of a junction FET. CONSTITUTION:When signal charges QA, QB... are transferred by two-phase clocks phi1, phi2 and reach below the floating gate, the potential of the floating fate is varied owing to electrostatic induction. Since this gate is connected to the gate of a junction type field effect transistor, voltage change results across the resistor 22 of the source follower so as to detect a signal. On an equillbrium state, the potential of the floating gate is equal to the source potential of the junction type field effect transistor and can be freely set by VO, voltage of an external power source 23. The substrate power source voltage VSUB may be larger than the external power source voltage VO. Moreover, low l/f characteristic can be attained, which is an advantage of a junction type field effect transistor.

38. 发明专利

JPS61128558A Solid-state image pickup element 失效
标题翻译：固态图像拾取元件
公开(公告)号：JPS61128558A
公开(公告)日：1986-06-16
申请号：JP24955384
申请日：1984-11-28
申请人： Hitachi Ltd
发明人： ANDO HARUHISA , OBA SHINYA , NAKAI MASAAKI , OZAKI TOSHIBUMI , KOIKE NORIO , ONO HIDEYUKI
IPC分类号： H01L27/146 , H04N5/335 , H04N5/359 , H04N5/374
CPC分类号： H01L27/14654
摘要： PURPOSE:To suppress a blooming phenomenon and a smear phenomenon by making a distance in the depth direction of a source region and a first conduction type semiconductor base body larger than a distance in the depth direction of sections except a photodiode and the first conduction type semiconductor base body. CONSTITUTION:The depth of a well at positions except the lower sections of photodiodes 33 is amde shallower than the lower sections of the photodiodes 33. Consequently, photoelectrons generated just under insulating films 37 or gates 35 reduce in approximately proportional to the depth of the well, and photoelectrons appearing in the gates 35, drains 34 and the well in the lower sections of the insulating films 37 are draw out in the direction of a substrate by an electric field from the substrate 31 because the depth of the well is shallow, and do not intrude approximately to the drains 34. A smear phenomenon can be suppressed largely by said two effects.
摘要翻译：目的：通过在源极区域和第一导电型半导体基体的深度方向上的距离比除了光电二极管之外的部分的深度方向上的距离大的第一导电型半导体，抑制起霜现象和涂抹现象基体构成：除了光电二极管33的下部以外的位置的阱的深度比光电二极管33的下部部分浅。因此，正好在绝缘膜37或栅极35下方产生的光电子与阱的深度大致成正比地减小，并且出现在栅极35，漏极34中的光电子和绝缘膜37的下部中的阱通过来自基板31的电场从衬底的方向被拉出，因为阱的深度较浅，以及不要大致流入排水管34.通过所述两种效果可以大大地抑制涂抹现象。

39. 发明专利

JPS60258958A CHARGE TRANSFER TYPE SOLID-STATE IMAGE PICKUP ELEMENT 失效
公开(公告)号：JPS60258958A
公开(公告)日：1985-12-20
申请号：JP11455384
申请日：1984-06-06
申请人： HITACHI LTD
发明人： KOIKE NORIO , NAKAI MASAAKI , TAKEMOTO KAYAO
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/372
摘要： PURPOSE:To improve the manufacturing yield and the performance by a method wherein the threshold voltage which a transfer gate has is risen up to a required value by reducing the channel width of the transfer gate to less than a specific value. CONSTITUTION:In Figs. (a) and (b), the numeral 7' represents the transfer gate, 2-1 an electrode constituting a vertical CCD, and a thick one-point chain line 20 the channel region of the vertical CCD2, the transfer gate region 7'-1, and a photo diode region 1'. When the channel width (w) constituting the transfer gate 7'-1 exceeds 8mum, the threshold value is constant with little variation. However, the reduction in channel width to less than 8mum shows a gradual increase in threshold voltage, and the reduction to less than 3mum shows a rapid increase. Therefore, when the channel width of the transfer gate is reduced more than a value close to 3mum, the threshold voltage rises by the narrow channel effect: it becomes possible to obtain a necessary threshold voltage not by ion implantation as conventional.

40. 发明专利

JPS6053945B2 失效
公开(公告)号：JPS6053945B2
公开(公告)日：1985-11-28
申请号：JP9136377
申请日：1977-08-01
申请人： HITACHI LTD
发明人： OOBA SHINYA , NAKAI MASAAKI , TAKEMOTO KAYAO , ANDO HARUHISA , KOIKE NORIO , HORIUCHI KATSUTADA , KUBO SEIJI
IPC分类号： H04N3/14 , H04N5/30 , H04N5/335 , H04N5/341 , H04N5/365 , H04N5/374

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