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31. 发明申请

US20100258888A1 High performance MTJ element for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US20100258888A1
公开(公告)日：2010-10-14
申请号：US12803189
申请日：2010-06-21
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： An STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co60Fe20B20. of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译：利用转移自旋角动量作为改变自由层的磁矩方向的机构的STT-MTJ MRAM单元。该器件包括形成在被钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，包含非晶态的自由层 Co60Fe20B20层。分别在3和6埃的Fe的两个结晶层之间形成约20埃的厚度。自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

32. 发明申请

US20100065935A1 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM 有权
标题翻译：用于制造自旋转矩（STT）-RAM的高性能MTJ装置的结构和方法
公开(公告)号：US20100065935A1
公开(公告)日：2010-03-18
申请号：US12284066
申请日：2008-09-18
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Po-Kang Wang , Robert Beach , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Po-Kang Wang , Robert Beach , Witold Kula
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-μm2 and good read margin is realized with a dR/R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high damping constant in the upper CoFeB free layer.
摘要翻译：公开了一种STT-RAM MTJ，其具有通过NOX工艺形成的MgO隧道势垒，具有中间纳米通道层的CoFeB / FeSiO / CoFeB复合自由层以最小化Jc0，以及Ru覆盖层以增强自旋散射效应并增加 dR / R。通过改变NOX工艺以获得RA小于10欧姆 - μm2的良好的写入余量，并且通过在330℃或更高温度退火以dO / R> 100％实现良好的读取余量以形成结晶CoFeB自由层。 NCC厚度保持在6至10埃范围内以减少Rp，并避免Fe（Si）颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。可以在覆盖层中的Ru层下方插入FeSiO层，以防止Ru在上部CoFeB自由层中引起高阻尼常数。

33. 发明申请

US20090027810A1 High performance MTJ element for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US20090027810A1
公开(公告)日：2009-01-29
申请号：US11880583
申请日：2007-07-23
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： We describe the structure and method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co60Fe20B20. of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译：我们描述形成使用自旋角动量转移的STT-MTJ MRAM单元的结构和方法，作为改变自由层的磁矩方向的机制。该器件包括形成在被钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，包含非晶态的自由层 Co60Fe20B20层。分别在3和6埃的Fe的两个结晶层之间形成约20埃的厚度。自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

34. 发明授权

US08176622B2 Process for manufacturing a magnetic tunnel junction (MTJ) device 有权
标题翻译：制造磁性隧道结（MTJ）装置的方法
公开(公告)号：US08176622B2
公开(公告)日：2012-05-15
申请号：US12657775
申请日：2010-01-27
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： H01F10/3254 , B82Y25/00 , G11B5/3163 , G11B5/3906 , G11C11/161 , H01F10/3281 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A process for manufacturing a high performance MTJ it is described: A first cap layer of NiFeHf is deposited on the free layer, followed by a second cap layer of Ru on Ta. The device is then heated so that oxygen trapped in the free layer diffuses into the NiFeHf layer, thereby sharpening the interface between the tunnel barrier layer and the free layer.
摘要翻译：描述了一种用于制造高性能MTJ的方法：将NiFeHf的第一覆盖层沉积在自由层上，随后是Ta上的Ru的第二盖层。然后加热该装置，使得在自由层中捕获的氧气扩散到NiFeHf层中，从而锐化隧道势垒层和自由层之间的界面。

35. 发明授权

US08058698B2 High performance MTJ element for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US08058698B2
公开(公告)日：2011-11-15
申请号：US12803189
申请日：2010-06-21
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L29/82 , G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： An STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that is an amorphous layer of Co60Fe20B20 of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer has a low Gilbert damping factor and a very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译：利用转移自旋角动量作为改变自由层的磁矩方向的机构的STT-MTJ MRAM单元。该器件包括形成在钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，是非晶形的自由层分别在3和6埃厚度的Fe的两个结晶层之间形成大约20埃厚度的Co60Fe20B20层。自由层具有低的吉尔伯特衰减因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

36. 发明申请

US20110133300A1 Bottom electrode for MRAM device 有权
标题翻译： MRAM器件底电极
公开(公告)号：US20110133300A1
公开(公告)日：2011-06-09
申请号：US12927670
申请日：2010-11-19
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L29/82
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.
摘要翻译：描述了用于氮化硅衬底上的MTJ器件的多层底电极。它包括在钌上的α钽的双层，其又位于第二钽层上的镍铬层上。

37. 发明申请

US20110076785A1 Process to fabricate bottom electrode for MRAM device 有权
标题翻译：制造MRAM器件底电极的工艺
公开(公告)号：US20110076785A1
公开(公告)日：2011-03-31
申请号：US12927615
申请日：2010-11-19
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a protective coating that is partly consumed during etching of the alpha tantalum portion of said bottom electrode. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”.
摘要翻译：在氮化硅衬底上形成用于MTJ器件的底部电极通过包括在所述底部电极的α钽部分的蚀刻期间部分消耗的保护涂层来促进。通过使用TaN / NiCr双层作为“胶”来增强对SiN的附着力。

38. 发明申请

US20090108383A1 High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same 有权
标题翻译：用于常规MRAM和STT-RAM的高性能MTJ元件及其制造方法
公开(公告)号：US20090108383A1
公开(公告)日：2009-04-30
申请号：US11981127
申请日：2007-10-31
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L43/10 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous CO40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.
摘要翻译：公开了使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有形成有自然氧化工艺的MgO隧道阻挡层，以实现低的RA（10欧姆 - um2）和不含CoFeB自由层的较低的固有阻尼常数的Fe或Fe / CoFeB / Fe自由层。当在360℃退火的MRAM MTJ堆叠中形成具有MgO隧道势垒（自由基氧化法）和CoFeB AP1钉扎层的Fe，FeB或Fe / CoFeB / Fe自由层时，提供高dR / R（TMR ）> 100％，TMR / Rp_cov = 20时读取余量大幅度提高。 100 nmx200 nm椭圆形STT-RAM MTJ的高速测量显示，用于切换无Fe层的Jc0是用于切换无定形CO40Fe40B20自由层的一半。 Fe / CoFeB / Fe自由层配置允许为STT-RAM应用增加Hc值。

39. 发明授权

US08969982B2 Bottom electrode for MRAM device 有权
标题翻译： MRAM器件底电极
公开(公告)号：US08969982B2
公开(公告)日：2015-03-03
申请号：US12927670
申请日：2010-11-19
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L29/82 , H01L43/12 , H01L43/08
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.
摘要翻译：描述了用于氮化硅衬底上的MTJ器件的多层底电极。它包括在钌上的α钽的双层，其又位于第二钽层上的镍铬层上。

40. 发明授权

US08436437B2 High performance MTJ elements for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US08436437B2
公开(公告)日：2013-05-07
申请号：US12803191
申请日：2010-06-21
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： A STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and a free layer that comprises an amorphous layer of Co60Fe20B20 of approximately 20 angstroms thickness or an amorphous ferromagnetic layer of Co40Fe40B20 of approximately 15 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译：利用自旋角度动量的转移作为改变自由层的磁矩方向的机构的STT-MTJ MRAM单元包括IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧穿势垒层，其形成于被钉扎层的Ar离子等离子体平滑表面和包含大约20埃厚度的Co60Fe20B20的非晶层的自由层或者在3和6的Fe的两个结晶层之间形成约15埃厚度的Co40Fe40B20的非晶铁磁层埃厚度。自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

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