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31. 发明申请

US20080057182A1 METHOD FOR GAP FILL IN CONTROLLED AMBIENT SYSTEM 审中-公开
标题翻译：控制环境系统中填隙的方法
公开(公告)号：US20080057182A1
公开(公告)日：2008-03-06
申请号：US11611758
申请日：2006-12-15
申请人： John Boyd , Yezdi Dordi , Tiruchirapalli Arunagiri , Benjamin Mooring , John Parks , William Thie , Fritz Redeker , Arthur Howald , Alan Schoepp , David Hemker
发明人： John Boyd , Yezdi Dordi , Tiruchirapalli Arunagiri , Benjamin Mooring , John Parks , William Thie , Fritz Redeker , Arthur Howald , Alan Schoepp , David Hemker
IPC分类号： B05D5/12 , B05D1/36
CPC分类号： H01L21/67207 , H01L21/76843 , H01L21/76877
摘要： A method for filling a trench of a substrate in a controlled environment is provided. The method initiates with etching a trench in the substrate in a first chamber of a cluster tool. A barrier layer configured to prevent electromigration is deposited over an exposed surface of the trench in a second chamber of the cluster tool and the trench is filled with a gap fill material deposited directly onto the barrier layer in the cluster tool. A semiconductor device fabricated by the method is also provided.
摘要翻译：提供了一种用于在受控环境中填充衬底的沟槽的方法。该方法通过在簇工具的第一室中蚀刻衬底中的沟槽来启动。构造成防止电迁移的阻挡层沉积在簇工具的第二腔中的沟槽的暴露表面上，并且沟槽填充有直接沉积在簇工具中的阻挡层上的间隙填充材料。还提供了通过该方法制造的半导体器件。

32. 发明授权

US07592259B2 Methods and systems for barrier layer surface passivation 有权
标题翻译：阻挡层表面钝化的方法和系统
公开(公告)号：US07592259B2
公开(公告)日：2009-09-22
申请号：US11641364
申请日：2006-12-18
申请人： Yezdi Dordi , John Boyd , Fritz Redeker , William Thie , Tiruchirapalli Arunagiri , Alex Yoon
发明人： Yezdi Dordi , John Boyd , Fritz Redeker , William Thie , Tiruchirapalli Arunagiri , Alex Yoon
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： C23C8/02 , C23C8/80 , C23C10/02 , C23C10/60 , C23C16/54 , C23C16/56 , C23C18/1601 , C23C18/1632 , C23C18/54 , C23C26/00 , C23C28/023 , C23C28/322 , C23C28/34 , C25D7/123 , C25D17/001 , H01L21/67161 , H01L21/67207 , H01L21/76855 , H01L21/76861 , H01L21/76862 , H01L21/76873
摘要： This invention pertains to methods and systems for fabricating semiconductor devices. One aspect of the present invention is a method of depositing a gapfill copper layer onto barrier layer for semiconductor device metallization. In one embodiment, the method includes forming the barrier layer on a surface of a substrate and subjecting the barrier layer to a process condition so as to form a removable passivated surface on the barrier layer. The method further includes removing the passivated surface from the barrier layer and depositing the gapfill copper layer onto the barrier layer. Another aspect of the present invention is an integrated system for depositing a copper layer onto a barrier layer for semiconductor device metallization. In one embodiment, the integrated system comprises at least one process module configured for barrier layer deposition and passivated surface formation and at least one other process module configured for passivated surface removal and deposition of copper onto the barrier layer. The system further includes at least one transfer module coupled so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.
摘要翻译：本发明涉及用于制造半导体器件的方法和系统。本发明的一个方面是在用于半导体器件金属化的阻挡层上沉积间隙填充铜层的方法。在一个实施例中，该方法包括在衬底的表面上形成阻挡层，并使阻挡层经受处理条件，以便在阻挡层上形成可移除的钝化表面。该方法还包括从阻挡层去除钝化表面并将间隙填充铜层沉积到阻挡层上。本发明的另一方面是用于在用于半导体器件金属化的阻挡层上沉积铜层的集成系统。在一个实施例中，集成系统包括被配置用于阻挡层沉积和钝化表面形成的至少一个工艺模块和被配置用于钝化表面去除和沉积到阻挡层上的至少一个其它工艺模块。所述系统还包括至少一个传送模块，所述至少一个传送模块被耦合，使得所述衬底可以在所述模块之间基本上不被暴露于形成氧化物的环境

33. 发明授权

US08623456B2 Methods for atomic layer deposition 有权
标题翻译：原子层沉积方法
公开(公告)号：US08623456B2
公开(公告)日：2014-01-07
申请号：US13605926
申请日：2012-09-06
申请人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
发明人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
IPC分类号： C23C16/22 , C23C16/44
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head, a pulse of a second reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head to react with the first reactant gas to form a portion of the thin layer of ALD film on the surface of substrate underneath the proximity head.
摘要翻译：公开了一种通过原子层沉积（ALD）在衬底表面上沉积薄膜的方法。所公开的方法包括将ALD沉积接近头放置在衬底上方，其中至少一个气体通道被配置为将气体分配到衬底表面的活性过程区域。 ALD沉积接近头在存在时延伸超过衬底表面的有效工艺区域并且与其间隔开。在将第一反应气体的脉冲分配在邻近头部下方的衬底表面的有源工艺区域上之后，第二反应气体的脉冲被分配在邻近头部下方的衬底表面的有源工艺区域上以与第一反应气体，以在邻近头部下方的基底表面上形成一部分ALD薄膜。

34. 发明申请

US20110306203A1 INTERCONNECT STRUCTURE AND METHOD OF MANUFACTURING A DAMASCENE STRUCTURE 审中-公开
标题翻译：互连结构和制造大分子结构的方法
公开(公告)号：US20110306203A1
公开(公告)日：2011-12-15
申请号：US13218035
申请日：2011-08-25
申请人： Yezdi Dordi , John M. Boyd , Fritz C. Redeker , William Thie , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon
发明人： Yezdi Dordi , John M. Boyd , Fritz C. Redeker , William Thie , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76873 , H01L21/76874 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.
摘要翻译：提供互连结构，包括具有至少一个开口的介电材料层和在限定开口的侧壁上的第一阻挡层。含钌的第二阻挡层覆盖第一阻挡层，第二阻挡层具有钌区，氧化钌区和富钌区。钌区介于第一阻挡层和氧化钌区之间。钌氧化物区位于钌区和富钌区之间。

35. 发明申请

US20100108491A1 METHODS FOR REMOVING A METAL OXIDE FROM A SUBSTRATE 有权
标题翻译：从基板上去除金属氧化物的方法
公开(公告)号：US20100108491A1
公开(公告)日：2010-05-06
申请号：US12683995
申请日：2010-01-07
申请人： Hyungsuk Alexander Yoon , William Thie , Yezdi Dordi , Andrew D. Bailey, III
发明人： Hyungsuk Alexander Yoon , William Thie , Yezdi Dordi , Andrew D. Bailey, III
IPC分类号： H05F3/00
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/67069 , H05H1/24 , H05H1/2406 , H05H1/48 , H05H2001/2418
摘要： A method for generating plasma for removing metal oxide from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric layer, and a wire mesh disposed between the powered electrode and the dielectric layer. The method also includes providing a grounded electrode assembly disposed opposite the powered electrode assembly to form a cavity wherein the plasma is generated. The wire mesh is shielded from the plasma by the dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the metal oxide. The method further includes introducing at least one inert gas and at least one process gas into the cavity. The method yet also includes applying an rf field to the cavity using the powered electrode to generate the plasma from the inert and the process gas.
摘要翻译：提供了一种用于从衬底去除金属氧化物的等离子体的方法。该方法包括提供一种动力电极组件，其包括供电电极，电介质层和布置在电源电极和电介质层之间的金属丝网。该方法还包括提供与动力电极组件相对设置的接地电极组件，以形成其中产生等离子体的空腔。当等离子体存在于空腔中时，金属丝网通过电介质层被屏蔽，等离子体在一端具有出口，用于提供等离子体以去除金属氧化物。该方法还包括将至少一种惰性气体和至少一种工艺气体引入空腔中。该方法还包括使用动力电极将空穴场施加到空腔，以从惰性气体和处理气体产生等离子体。

36. 发明授权

US07662253B2 Apparatus for the removal of a metal oxide from a substrate and methods therefor 失效
标题翻译：用于从衬底去除金属氧化物的设备及其方法
公开(公告)号：US07662253B2
公开(公告)日：2010-02-16
申请号：US11237457
申请日：2005-09-27
申请人： Hyungsuk Alexander Yoon , William Thie , Yezdi Dordi , Andrew D. Bailey, III
发明人： Hyungsuk Alexander Yoon , William Thie , Yezdi Dordi , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/67069 , H05H1/24 , H05H1/2406 , H05H1/48 , H05H2001/2418
摘要： An apparatus generating a plasma for removing metal oxide from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the metal oxide.
摘要翻译：公开了一种从衬底生成用于去除金属氧化物的等离子体的装置。该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一金属丝网被第一介电层与等离子体屏蔽，空腔在一端具有出口，用于提供等离子体以去除金属氧化物。

37. 发明授权

US08883027B2 Methods for removing a metal oxide from a substrate 有权
标题翻译：从基材除去金属氧化物的方法
公开(公告)号：US08883027B2
公开(公告)日：2014-11-11
申请号：US12683995
申请日：2010-01-07
申请人： Hyungsuk Alexander Yoon , William Thie , Yezdi Dordi , Andrew D. Bailey, III
发明人： Hyungsuk Alexander Yoon , William Thie , Yezdi Dordi , Andrew D. Bailey, III
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/02 , H05H1/24 , H01L21/67 , H01L21/311 , C23C16/00
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/67069 , H05H1/24 , H05H1/2406 , H05H1/48 , H05H2001/2418
摘要： A method for generating plasma for removing metal oxide from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric layer, and a wire mesh disposed between the powered electrode and the dielectric layer. The method also includes providing a grounded electrode assembly disposed opposite the powered electrode assembly to form a cavity wherein the plasma is generated. The wire mesh is shielded from the plasma by the dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the metal oxide. The method further includes introducing at least one inert gas and at least one process gas into the cavity. The method yet also includes applying an rf field to the cavity using the powered electrode to generate the plasma from the inert and the process gas.
摘要翻译：提供了一种用于从衬底去除金属氧化物的等离子体的方法。该方法包括提供一种动力电极组件，其包括供电电极，电介质层和布置在电源电极和电介质层之间的金属丝网。该方法还包括提供与动力电极组件相对设置的接地电极组件，以形成其中产生等离子体的空腔。当等离子体存在于空腔中时，金属丝网通过电介质层被屏蔽，等离子体在一端具有出口，用于提供等离子体以去除金属氧化物。该方法还包括将至少一种惰性气体和至少一种工艺气体引入空腔中。该方法还包括使用动力电极将空穴场施加到空腔，以从惰性气体和处理气体产生等离子体。

38. 发明申请

US20130040460A1 METHODS FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：原子层沉积的方法
公开(公告)号：US20130040460A1
公开(公告)日：2013-02-14
申请号：US13605926
申请日：2012-09-06
申请人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
发明人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head, a pulse of a second reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head to react with the first reactant gas to form a portion of the thin layer of ALD film on the surface of substrate underneath the proximity head.
摘要翻译：公开了一种通过原子层沉积（ALD）在衬底表面上沉积薄膜的方法。所公开的方法包括将ALD沉积接近头放置在衬底上方，其中至少一个气体通道被配置为将气体分配到衬底表面的活性过程区域。 ALD沉积接近头在存在时延伸超过衬底表面的有效工艺区域并且与其间隔开。在将第一反应气体的脉冲分配在邻近头部下方的衬底表面的有源工艺区域上之后，第二反应气体的脉冲被分配在邻近头部下方的衬底表面的有源工艺区域上以与第一反应气体，以在邻近头部下方的基底表面上形成一部分ALD薄膜。

39. 发明申请

US20120248219A1 APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：US20120248219A1
公开(公告)日：2012-10-04
申请号：US13489235
申请日：2012-06-05
申请人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
发明人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
IPC分类号： B05B1/28
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： A proximity heads for dispensing reactants and purging gas to deposit a thin film by Atomic Layer Deposition (ALD) includes a plurality of sides. Extending over a portion of the substrate region and being spaced apart from the portion of the substrate region when present, the proximity head is rotatable so as to place each side in a direction of the substrate region, and is disposed in a vacuum chamber coupled to a carrier gas source to sustain a pressure for the proximity head during operation. Each side of the proximity head includes a gas conduit through which the reactant gas and the purging gas are sequentially dispensed, and at least two separate vacuum conduits on each side of the gas conduit to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate.
摘要翻译：用于分配反应物和吹扫气体以通过原子层沉积（ALD）沉积薄膜的邻近头包括多个侧面。当衬底区域的一部分延伸并与衬底区域的部分间隔开时，邻近头部是可旋转的，以便将每个侧面放置在衬底区域的方向上，并且设置在耦合到载体气体源，用于在操作期间维持邻近头部的压力。邻近头部的每一侧包括气体导管，反应气体和净化气体依次分配通过该气体导管，以及在气体导管的每一侧上的至少两个独立的真空管道，以将过量的反应气体，净化气体或沉积副产物从面对衬底的接近头的表面与衬底之间的反应体积。

40. 发明申请

US20080261412A1 APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：US20080261412A1
公开(公告)日：2008-10-23
申请号：US11736511
申请日：2007-04-17
申请人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
发明人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
IPC分类号： H01L21/31 , C23C16/54
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： The embodiments provide apparatus and methods of depositing conformal thin film on interconnect structures by providing processes and systems using an atomic layer deposition (ALD). More specifically, each of the ALD systems includes a proximity head that has a small reaction volume right above an active process region of the substrate surface. The proximity head small amount of reactants and purging gas to be distributed and pumped away from the small reaction volume between the proximity head and the substrate in relatively short periods, which increases the through-put. In an exemplary embodiment, a proximity head for dispensing reactants and purging gas to deposit a thin film by atomic layer deposition (ALD) is provided. The proximity head is configured to sequentially dispensing a reactant gas and a purging gas to deposit a thin ALD film under the proximity head. The proximity head covers an active process region of a substrate surface. The proximity head also includes at least one vacuum channel to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate. The proximity includes a plurality of sides, each side being configured to dispense either a reactant gas or a purging gas on the substrate surface underneath the proximity head. Each side has at least one vacuum channel.
摘要翻译：实施例提供了通过提供使用原子层沉积（ALD）的工艺和系统在互连结构上沉积保形薄膜的装置和方法。更具体地，每个ALD系统包括在基板表面的有效工艺区域正上方具有小的反应体积的邻近头部。接近头部较少量的反应物和净化气体在相对较短的时间段内被分配并从相邻头部和基底之间的小的反应体积中泵出，这增加了通过量。在一个示例性实施例中，提供了用于分配反应物和吹扫气体以通过原子层沉积（ALD）沉积薄膜的邻近头。接近头被配置为顺序地分配反应气体和净化气体，以在邻近头部附近沉积薄的ALD膜。接近头覆盖衬底表面的活性过程区域。接近头还包括至少一个真空通道，以从邻近头部的面向衬底的表面和衬底之间的反应体积拉出过量的反应气体，吹扫气体或沉积副产物。邻近部分包括多个侧面，每个侧面被构造成在邻近头部下方的衬底表面上分配反应物气体或净化气体。每侧至少有一个真空通道。

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