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31. 发明申请

US20090237104A1 TESTING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT AND INFORMATION RECORDING MEDIUM 有权
标题翻译：半导体集成电路和信息记录介质的测试方法
公开(公告)号：US20090237104A1
公开(公告)日：2009-09-24
申请号：US12066748
申请日：2007-03-06
申请人： Hiromi Tsuchida , Akihiro Maejima , Jinsaku Kaneda , Eisaku Maeda
发明人： Hiromi Tsuchida , Akihiro Maejima , Jinsaku Kaneda , Eisaku Maeda
IPC分类号： G01R31/26
CPC分类号： G01R31/2894
摘要： A testing method of semiconductor integrated circuit wherein the quality of diffusion for semiconductor chips can be tested before the semiconductor chips become packaged semiconductor integrated circuits is provided. Input data is set, and circuit current values I(L) and I(H) obtained for each of a plurality of circuit areas are compared with first test pass ranges I1(L) and I1(H) to extract articles within the first test pass (S2), and the current values of the circuit areas determined to be articles within the first test pass and second test pass ranges I2(L), and I2(H) determined based on these current values are compared, thereby conducting a retest to extract circuit areas within the second test pass. The current values may be replaced by the voltage values.
摘要翻译：提供半导体集成电路的测试方法，其中可以在半导体芯片变成封装半导体集成电路之前测试半导体芯片的扩散质量。设置输入数据，将与多个电路区域中的每一个获得的电路电流值I（L）和I（H）与第一测试通过范围I1（L）和I1（H）进行比较，以提取第一测试（S2），并且将根据这些电流值确定的确定为第一测试通过和第二测试通过范围I2（L）和I2（H）的物品的电路区域的当前值进行比较，从而进行重新测试在第二次测试通过期间提取电路区域。电流值可以由电压值代替。

32. 发明申请

US20090108434A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, PDP DRIVER, AND PLASMA DISPLAY PANEL 有权
标题翻译：半导体集成电路器件，PDP驱动器和等离子体显示面板
公开(公告)号：US20090108434A1
公开(公告)日：2009-04-30
申请号：US12067953
申请日：2007-03-22
申请人： Eisaku Maeda , Hiroshi Ando , Jinsaku Kaneda , Akihiro Maejima , Hiroki Matsunaga
发明人： Eisaku Maeda , Hiroshi Ando , Jinsaku Kaneda , Akihiro Maejima , Hiroki Matsunaga
IPC分类号： H01L23/48 , H01L23/488
CPC分类号： H01L24/06 , H01L23/50 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2224/05554 , H01L2224/05599 , H01L2224/0603 , H01L2224/48091 , H01L2224/4813 , H01L2224/48227 , H01L2224/4911 , H01L2224/49111 , H01L2224/49113 , H01L2224/4917 , H01L2224/49175 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01033 , H01L2924/01082 , H01L2924/14 , H01L2924/19043 , H01L2924/3011 , H01L2224/45099 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： In a semiconductor integrated circuit device of the present invention, temperature increase of a bonding wire can be suppressed even when conductive leads are short-circuited with each other, and reliability of the semiconductor integrated circuit device is improved. The conductive leads of a resin package for supplying a power supply section of a semiconductor integrated circuit chip with power from an external power supply are connected with bonding pads of the semiconductor integrated circuit chip by a plurality of bonding wires. Furthermore, the conductive leads connected to a GND for supplying the power supply section of the semiconductor integrated circuit chip with a grounding potential are connected with the bonding pads of the semiconductor integrated circuit chip by a plurality of bonding wires.
摘要翻译：在本发明的半导体集成电路器件中，即使导电线彼此短路，也可以抑制接合线的温度升高，提高半导体集成电路器件的可靠性。用于向外部电源供电的半导体集成电路芯片的电源部分的树脂封装的导电引线通过多根接合线与半导体集成电路芯片的接合焊盘连接。此外，连接到用于向半导体集成电路芯片的电源部分提供接地电位的GND的导电引线通过多个接合线与半导体集成电路芯片的接合焊盘连接。

33. 发明申请

US20080068368A1 Sustain Driver, Sustain Control System, And Display Device 有权
标题翻译：维持驱动器，维护控制系统和显示设备
公开(公告)号：US20080068368A1
公开(公告)日：2008-03-20
申请号：US11941240
申请日：2007-11-16
申请人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
发明人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
IPC分类号： G09G3/28 , G09G5/00
CPC分类号： G09G3/296 , G09G3/282 , G09G3/294 , G09G2300/0408 , G09G2310/0289 , G09G2330/04
摘要： The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.
摘要翻译：双极晶体管电路的集电极，发射极和基极分别连接到高侧电源端子，电平移位晶体管的漏极和浮动电源端子。当高边输出晶体管导通时，浮动电源端子处于高电位电源端子的电位。高侧电源端子通过恒定电压处于高于浮动电源端子的电位的电位。开启电平移位晶体管时，其漏极电位降低到浮动电源端子的电位以下; 基极电流流过双极晶体管电路，电平移位晶体管的漏极电压钳位在浮动电源端子的电位附近; 双极晶体管电路导通，其集电极电流提供电平移位晶体管的漏极电流。

34. 发明申请

US20050263910A1 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US20050263910A1
公开(公告)日：2005-12-01
申请号：US11139590
申请日：2005-05-31
申请人： Eisaku Maeda , Akihiro Maejima , Hiroki Matsunaga , Jinsaku Kaneda , Masahiko Sasada
发明人： Eisaku Maeda , Akihiro Maejima , Hiroki Matsunaga , Jinsaku Kaneda , Masahiko Sasada
IPC分类号： H01L23/528 , H01L27/118 , H01L23/52
CPC分类号： H01L27/11803 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a layout of a multi-channel semiconductor integrated circuit and provides a layout of a semiconductor integrated circuit having ternary circuits in order to increase a degree of integration in the semiconductor integrated circuit and stabilize the output characteristics. A ternary circuit is formed by arranging a second high-side transistor, a diode, a second level shift circuit on one hand, and a low-side transistor, a first high-side transistor, a first level shift circuit, and a pre-driver on the other, so that each of the cells are arranged in a row and an output bonding pad is placed between the second high-side transistor and the low-side transistor, where a cell width of the first level shift circuit, second level shift circuit and pre-driver corresponds to a cell width of the low-side transistor.
摘要翻译：本发明涉及多通道半导体集成电路的布局，并提供具有三元电路的半导体集成电路的布局，以增加半导体集成电路中的集成度并稳定输出特性。一方面通过布置第二高侧晶体管，二极管，第二电平移位电路和低端晶体管，第一高侧晶体管，第一电平移位电路和预置电路来形成三元电路，驱动器，使得每个单元格排列成一行，并且输出接合焊盘放置在第二高侧晶体管和低侧晶体管之间，其中第一电平移位电路的单元宽度为第二电平移位电路和预驱动器对应于低侧晶体管的单元宽度。

35. 发明授权

US07495296B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US07495296B2
公开(公告)日：2009-02-24
申请号：US11139590
申请日：2005-05-31
申请人： Eisaku Maeda , Akihiro Maejima , Hiroki Matsunaga , Jinsaku Kaneda , Masahiko Sasada
发明人： Eisaku Maeda , Akihiro Maejima , Hiroki Matsunaga , Jinsaku Kaneda , Masahiko Sasada
IPC分类号： H01L29/94
CPC分类号： H01L27/11803 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a layout of a multi-channel semiconductor integrated circuit and provides a layout of a semiconductor integrated circuit having ternary circuits in order to increase a degree of integration in the semiconductor integrated circuit and stabilize output characteristics. A ternary circuit is formed by arranging a second high-side transistor, a diode, a second level shift circuit on one hand, and a low-side transistor, a first high-side transistor, a first level shift circuit, and a pre-driver on the other, so that each of cells are arranged in a row and an output bonding pad is placed between the second high-side transistor and the low-side transistor, wherein a cell width of the first level shift circuit, second level shift circuit and pre-driver corresponds to a cell width of the low-side transistor.
摘要翻译：本发明涉及多通道半导体集成电路的布局，并提供具有三元电路的半导体集成电路的布局，以增加半导体集成电路中的集成度并稳定输出特性。一方面通过布置第二高侧晶体管，二极管，第二电平移位电路和低端晶体管，第一高侧晶体管，第一电平移位电路和预置电路来形成三元电路，驱动器，使得每个单元排列成一行，并且输出接合焊盘放置在第二高侧晶体管和低侧晶体管之间，其中第一电平移位电路的单元宽度，第二电平移位电路和预驱动器对应于低侧晶体管的单元宽度。

36. 发明申请

US20070268059A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
标题翻译：半导体集成电路设备
公开(公告)号：US20070268059A1
公开(公告)日：2007-11-22
申请号：US11749266
申请日：2007-05-16
申请人： Tomohisa SAKAGUCHI , Hiroki Matsunaga , Akihiro Maejima , Jinsaku Kaneda , Eisaku Maeda
发明人： Tomohisa SAKAGUCHI , Hiroki Matsunaga , Akihiro Maejima , Jinsaku Kaneda , Eisaku Maeda
IPC分类号： H03L5/00
CPC分类号： H03K19/00315
摘要： A semiconductor integrated circuit device capable of securely preventing the output from becoming indefinite even when power is turned ON or OFF or even in a transient state in which the power voltage varies abruptly. In the semiconductor integrated circuit device, a protection circuit compares the power voltage from a first power supply terminal with a reference voltage, detects power ON, power OFF and abrupt power voltage variation, and outputs a reset command signal so that the output at the output terminal has a high impedance at the time of power ON, power OFF and abrupt power voltage variation.
摘要翻译：即使电源接通或断开，或即使在电源电压突然变化的过渡状态下，也能够可靠地防止输出变得不确定的半导体集成电路器件。在半导体集成电路装置中，保护电路将来自第一电源端子的电源电压与参考电压进行比较，检测电源接通，断电和突然的电源电压变化，并输出复位指令信号，使得输出端端子在电源接通，电源关闭和突然的电源电压变化时具有高阻抗。

37. 发明申请

US20060119389A1 Circuit for generating ternary signal 失效
标题翻译：用于产生三态信号的电路
公开(公告)号：US20060119389A1
公开(公告)日：2006-06-08
申请号：US11290062
申请日：2005-11-30
申请人： Jinsaku Kaneda , Akihiro Maejima , Hiroki Matsunaga , Eisaku Maeda , Hiroshi Ando
发明人： Jinsaku Kaneda , Akihiro Maejima , Hiroki Matsunaga , Eisaku Maeda , Hiroshi Ando
IPC分类号： H03K19/00
CPC分类号： H03K3/00 , H03K17/00 , H03K17/693
摘要： A circuit for generating a ternary signal that receives a binary input-control signal and a binary reset signal and outputs a ternary signal. The circuit includes first to third transistors, each source terminal thereof is respectively connected to the three power supplies, and a sequential circuit that outputs control signals controlling the transistors. The sequential circuit outputs control signals that make the first and the third transistors be switched in a complementary manner in an initial state, and make the second and the third transistors be switched in a state that it is released from the initial state.
摘要翻译：用于产生接收二进制输入控制信号和二进制复位信号并输出三进制信号的三态信号的电路。电路包括第一至第三晶体管，其每个源极分别连接到三个电源，以及输出控制晶体管的控制信号的顺序电路。顺序电路输出使得第一和第三晶体管在初始状态下以互补方式切换的控制信号，并且使第二和第三晶体管在从初始状态释放的状态下被切换。

38. 发明申请

US20090273099A1 SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：半导体集成电路
公开(公告)号：US20090273099A1
公开(公告)日：2009-11-05
申请号：US12094494
申请日：2006-09-29
申请人： Hiroki Matsunaga , Akihiro Maejima , Jinsaku Kaneda , Hiroshi Ando , Eisaku Maeda
发明人： Hiroki Matsunaga , Akihiro Maejima , Jinsaku Kaneda , Hiroshi Ando , Eisaku Maeda
IPC分类号： H01L25/16
CPC分类号： H01L27/12 , G09G3/296 , H01L24/06 , H01L24/49 , H01L27/0207 , H01L27/11898 , H01L2224/05554 , H01L2224/06179 , H01L2224/49179 , H01L2924/00014 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/3011 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： On a semiconductor chip in a semiconductor integrated circuit, a plurality of circuit cells each of which has a pad are formed along a first chip side of the semiconductor chip. Among the plurality of circuit cells, one or more circuit cells at least in the vicinity of an end portion on the first chip side are arranged having a steplike shift in a direction apart from the first chip side with decreasing distance from the center portion to the end portion on the first chip side.
摘要翻译：在半导体集成电路中的半导体芯片上，沿着半导体芯片的第一芯片侧形成有具有焊盘的多个电路单元。在多个电路单元中，至少在第一芯片侧的端部附近的一个或多个电路单元被布置成沿着与第一芯片侧分离的方向具有阶梯状偏移，其中心部分到中间部分的距离减小第一芯片侧的端部。

39. 发明申请

US20090167371A1 CAPACITIVE LOAD DRIVING CIRCUIT 审中-公开
标题翻译：电容负载驱动电路
公开(公告)号：US20090167371A1
公开(公告)日：2009-07-02
申请号：US11720507
申请日：2006-01-11
申请人： Hiroshi Ando , Akihiro Maejima , Hiroki Matsunaga , Jinsaku Kaneda , Eisaku Maeda
发明人： Hiroshi Ando , Akihiro Maejima , Hiroki Matsunaga , Jinsaku Kaneda , Eisaku Maeda
IPC分类号： H03K3/00
CPC分类号： G09G3/296 , G09G3/293
摘要： It is aimed to reduce the area of an output circuit in a capacitive load driving circuit capable of high voltage output, such as a PDP scan driver for driving a plasma display panel. To achieve this, there are provided an arbitrary number of N-type MOS transistors 001, 002, . . . , and 003 including grounded sources and gates receiving a control signal, diodes 004, 005, . . . , and 006 paired with the N-type MOS transistors 001, 002, . . . , and 003, respectively, and including cathodes connected to drains of the N-type MOS transistors 001, 002, . . . , and 003 and anode, all connected to a first node 044, the number of diodes being the same as the number of N-type MOS transistors, and a first P-type MOS transistor 015 having a drain connected to the first node 044, a gate receiving a control signal and a source connected to a high voltage source.
摘要翻译：旨在减小能够高电压输出的电容性负载驱动电路中的输出电路的面积，例如用于驱动等离子体显示面板的PDP扫描驱动器。为了实现这一点，提供了任意数量的N型MOS晶体管001，002。。。，003包括接收的源极和接收控制信号的门，二极管004，005，...。。。，006与N型MOS晶体管001，002配对。。。和003，并且包括连接到N型MOS晶体管001，002的漏极的阴极。。。，003和阳极，全部连接到第一节点044，二极管的数量与N型MOS晶体管的数量相同，以及具有连接到第一节点044的漏极的第一P型MOS晶体管015，接收控制信号的栅极和连接到高电压源的源极。

40. 发明申请

US20060044041A1 Driver circuit 有权
标题翻译：驱动电路
公开(公告)号：US20060044041A1
公开(公告)日：2006-03-02
申请号：US11211638
申请日：2005-08-26
申请人： Eisaku Maeda , Hiroshi Ando , Jinsaku Kaneda , Akihiro Maejima , Hiroki Matsunaga
发明人： Eisaku Maeda , Hiroshi Ando , Jinsaku Kaneda , Akihiro Maejima , Hiroki Matsunaga
IPC分类号： H03L5/00
CPC分类号： H03K3/356113 , G09G3/296 , G09G2330/04 , H03K3/012 , H03K19/0013
摘要： A driver circuit is provided for preventing generation of a pass-through current in a CMOS output unit even if a power supply voltage VDD supplied from a low voltage power supply drops below a recommended operating power supply voltage. The driver circuit includes a level shift unit having PMOS transistors and NMOS transistors, and a CMOS output unit having a PMOS transistor and an NMOS transistor. The source, drain and gate of one PMOS transistor are respectively connected to a high voltage power supply, a first contact and a second contact. The source, drain and gate of a second PMOS transistor are respectively connected to a high voltage power supply, the second contact and the first contact. The source of one NMOS transistor is grounded, the drain thereof is connected to the first contact, and the gate thereof receives a low voltage signal. The source of a second NMOS transistor is grounded, the drain thereof is connected to the second contact, and the gate thereof receives a low voltage signal. In this driver circuit, the driving current of the one PMOS transistor is higher than the driving current of the one NMOS transistor.
摘要翻译：即使从低电压电源提供的电源电压VDD低于推荐的工作电源电压，也提供用于防止在CMOS输出单元中产生通过电流的驱动电路。驱动器电路包括具有PMOS晶体管和NMOS晶体管的电平移位单元和具有PMOS晶体管和NMOS晶体管的CMOS输出单元。一个PMOS晶体管的源极，漏极和栅极分别连接到高压电源，第一触点和第二触点。第二PMOS晶体管的源极，漏极和栅极分别连接到高压电源，第二触点和第一触点。一个NMOS晶体管的源极接地，其漏极连接到第一触点，其栅极接收低电压信号。第二NMOS晶体管的源极接地，其漏极连接到第二触点，并且其栅极接收低电压信号。在该驱动电路中，一个PMOS晶体管的驱动电流高于一个NMOS晶体管的驱动电流。

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