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31. 发明授权

US5792255A Manufacturing method of single crystal 失效
标题翻译：单晶的制造方法
公开(公告)号：US5792255A
公开(公告)日：1998-08-11
申请号：US655201
申请日：1996-05-30
申请人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Hirotoshi Yamagishi
发明人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/20 , C30B15/30 , C30B29/06 , C30B30/04 , C30B15/22
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1068
摘要： In a single crystal manufacturing method by a horizontal magnetic field applied CZ method wherein coils are disposed interposing a crucible coaxially with each other, the coils constituting superconductive electromagnets of a magnetic field application apparatus and the silicon crystal is pulled from melt in the crucible while applying a horizontal magnetic field to the melt; an elavation apparatus capable of finely adjusting relative positions of the superconductive electromagnets and the crcucible in a vertical direction is disposed. The descent of a central portion Cm in a depth direction of the melt is canceled by elevating the crucible with the elevating apparatus, the descent being accompanied with proceeding of process of pulling the single crystal, thereby a coil central axis Cc of the superconductive electromagnets always passes through the central portion Cm or below this portion. Compared with the conventional HMCZ method, an uniformity of an intensity distribution of the magnetic field applied to the melt is increased so that a suppression effect on the melt convection all over the crucible is enhanced.
摘要翻译：在通过水平磁场施加的CZ方法的单晶制造方法中，其中线圈彼此同轴地布置坩埚，构成磁场施加装置的超导电磁体的线圈和硅晶体在施加时从坩埚中的熔体拉出熔体的水平磁场; 设置能够精细地调整超导电磁体和坩埚在垂直方向上的相对位置的冲压装置。通过用升降装置升高坩埚来消除熔体深度方向上的中心部分Cm的下降，伴随着牵引单晶的过程的下降，超导电磁体的线圈中心轴Cc总是通过中心部分Cm或者低于该部分。与传统的HMCZ方法相比，施加到熔体的磁场的强度分布的均匀性增加，从而增强了对整个坩埚的熔体对流的抑制效果。

32. 发明授权

US5667588A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5667588A
公开(公告)日：1997-09-16
申请号：US658275
申请日：1996-06-05
申请人： Eiichi Iino , Kiyataka Takano , Masanori Kimura , Koji Mizuishi , Hirotoshi Yamagishi
发明人： Eiichi Iino , Kiyataka Takano , Masanori Kimura , Koji Mizuishi , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/00 , Y10S117/90 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： Arranged is a covering plate which closes and opens an entrance of a valve container between a lower chamber and an upper chamber, the lower chamber containing a crucible and the upper chamber containing a wire to pull a single crystal. The covering plate is contained in a circle-shaped space portion within a wall by closing and opening means. The covering plate closes the entrance so that an isolation valve is protected. Since at the time of opening the entrance the covering plate is contained within the wall without contacting with the wall, the fall of dusts produced by peeling off of a film deposited on the wall can be prevented. Furthermore, the covering plate is contained in a circle-shaped space portion without exposing the front and back surfaces thereof to the air.
摘要翻译：排列是在下室和上室之间封闭并打开阀容器的入口的盖板，下室容纳坩埚，上室包含用于拉出单晶的电线。盖板通过关闭和打开装置容纳在壁内的圆形空间部分中。盖板关闭入口，从而保护隔离阀。由于在打开入口时，盖板容纳在壁内而不与壁接触，所以可以防止由于通过剥离沉积在壁上的膜而产生的灰尘的掉落。此外，覆盖板容纳在圆形空间部分中，而不将其前表面和后表面暴露于空气中。

33. 发明授权

US06548035B1 Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same 有权
标题翻译：用于外延晶片的硅单晶晶片，外延晶片及其制造方法及其评估
公开(公告)号：US06548035B1
公开(公告)日：2003-04-15
申请号：US09868058
申请日：2001-06-14
申请人： Akihiro Kimura , Makoto Iida , Yoshinori Hayamizu , Ken Aihara , Masanori Kimura
发明人： Akihiro Kimura , Makoto Iida , Yoshinori Hayamizu , Ken Aihara , Masanori Kimura
IPC分类号： A01N4340
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206 , H01L21/3225
摘要： A silicon single crystal wafer for epitaxial growth grown by the CZ method, which is doped with nitrogen and has a V-rich region over its entire plane, or doped with nitrogen, has an OSF region in its plane, and shows an LEP density of 20/cm2 or less or an OSF density of 1×104/cm2 or less in the OSF region, epitaxial wafer utilizing the substrate, as well as methods for producing them and method for evaluating a substrate suitable for an epitaxial wafer. There are provided a substrate for an epitaxial wafer that suppresses crystal defects to be generated in an epitaxial layer when epitaxial growth is performed on a CZ silicon single crystal wafer doped with nitrogen and also has superior IG ability, epitaxial wafer utilizing the substrate, as well as methods for producing them and method for evaluating a substrate suitable for an epitaxial wafer.
摘要翻译：通过CZ法生长的用于外延生长的硅单晶晶片，其掺杂有氮并在其整个平面上具有富V区或掺杂氮，在其平面中具有OSF区，并且显示出LEP密度在OSF区域中使用20 / cm 2以下的OSF密度或1×10 4 / cm 2以下的OSF密度，利用该基板的外延晶片及其制造方法以及评价适用于外延晶片的基板的方法。提供了一种用于外延晶片的衬底，其抑制在掺杂氮的CZ硅单晶晶片上进行外延生长时外延层中产生的晶体缺陷，并且还具有优异的IG能力，以及利用衬底的外延晶片作为其制造方法和评价适用于外延晶片的基板的方法。

34. 发明授权

US06599360B2 Silicon wafer, method for determining production conditions of silicon single crystal and method for producing silicon wafer 有权
标题翻译：硅晶片，用于确定硅单晶的生产条件的方法及其制造方法
公开(公告)号：US06599360B2
公开(公告)日：2003-07-29
申请号：US09936920
申请日：2001-09-20
申请人： Makoto Iida , Masanori Kimura
发明人： Makoto Iida , Masanori Kimura
IPC分类号： C30B1502
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206 , G01N2033/0095 , H01L21/3225
摘要： According to the present invention, there are provided a silicon wafer, wherein an epi-layer is not formed on a surface, and number of LSTDs having a size of 50 nm or more existing in a surface layer portion is 0.24 number/cm2 or less; a method for determining production conditions of a silicon single crystal, which comprises pulling nitrogen-doped silicon single crystals by the CZ method while varying V/G and/or PT, producing silicon wafers from the silicon single crystals, subjecting the silicon wafers to a heat treatment, determining acceptability of the wafers based on a predetermined characteristic value, obtaining correlation between the acceptability and V/G and PT, and determining production conditions based on the correlation; and a method for producing a silicon wafer comprising pulling a silicon single crystal so that V/G and PT should be lower than V/G and shorter than PT that are uniquely defined by predetermined nitrogen concentration and oxygen concentration in the silicon single crystal, conditions of heat treatment to which the silicon wafer is subjected, and grown-in defect density of the silicon wafer. According to the present invention, a nitrogen-doped annealed wafer showing a low defect density even under severe examination conditions and little fluctuation thereof depending on the production condition is produced.
摘要翻译：根据本发明，提供了一种硅晶片，其中在表面上不形成外延层，存在于表层部分中的具有50nm以上的尺寸的LSTD的数量为0.24个/ cm 2以下 ; 一种用于测定硅单晶的生产条件的方法，其包括在改变V / G和/或PT的同时通过CZ方法拉氮掺杂的硅单晶，从硅单晶产生硅晶片，将硅晶片热处理，基于预定特征值确定晶片的可接受性，获得可接受性与V / G和PT之间的相关性，并且基于相关性确定生产条件; 以及用于制造硅晶片的方法，其包括拉制单晶硅，使得V / G和PT应低于由单晶中的预定氮浓度和氧浓度唯一限定的V / G并且短于PT，条件硅晶片经受的热处理和硅晶片的成长缺陷密度。根据本发明，即使在严格的检查条件下，即使在生产条件下也产生不大的波动的氮掺杂退火晶片。

35. 发明授权

US06544332B1 Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer 有权
标题翻译：通过该方法制造硅单晶，硅单晶的方法和硅晶片
公开(公告)号：US06544332B1
公开(公告)日：2003-04-08
申请号：US09830386
申请日：2001-04-26
申请人： Makoto Iida , Masanori Kimura , Hiroshi Takeno , Yoshinori Hayamizu
发明人： Makoto Iida , Masanori Kimura , Hiroshi Takeno , Yoshinori Hayamizu
IPC分类号： C30B1504
CPC分类号： C30B15/206 , C30B29/06
摘要： A method for producing a silicon single crystal in accordance with CZ method, characterized in that before producing the crystal having a predetermined kind and concentration of impurity, another silicon single crystal having the same kind and concentration of impurity as the crystal to be produced is grown to thereby determine an agglomeration temperature zone of grown-in defects thereof, and then based on the temperature, growth condition of the crystal to be produced or temperature distribution within a furnace of a pulling apparatus is set such that a cooling rate of the crystal for passing through the agglomeration temperature zone is a desired rate to thereby produce the silicon single crystal. A silicon single crystal produced in accordance with the above method, characterized in that a density of LSTD before subjecting to heat treatment is 500 number/cm2 or more and the average defect size is 70 nm or less. The present invention provides by CZ method a silicon single crystal and a silicon wafer wherein the dispersion in size and density of grown-in defects is suppressed effectively and the quality is stabilized regardless of the variety of crystals, and a producing method therefor.
摘要翻译：根据CZ方法制造单晶硅的方法，其特征在于，在制造具有预定种类和浓度的杂质的晶体之前，生长具有与待生产的晶体相同种类和杂质浓度的另一硅单晶从而确定其生长缺陷的附聚温度区，然后基于温度，将要生产的晶体的生长条件或拉制装置的炉内的温度分布设定为使得用于通过附聚温度区域是所需的速率，从而产生硅单晶。根据上述方法制备的硅单晶，其特征在于，在热处理之前的LSTD的密度为500个数/ cm 2以上，平均缺陷尺寸为70nm以下。本发明通过CZ法提供了硅单晶和硅晶片，其中无论晶体的种类如何，有效地抑制了生长缺陷的尺寸和密度的分散，并且质量稳定，并且其制造方法。

36. 发明授权

US06843847B1 Silicon single crystal wafer and production method thereof and soi wafer 有权
标题翻译：硅单晶晶片及其制造方法和硅晶片
公开(公告)号：US06843847B1
公开(公告)日：2005-01-18
申请号：US09869912
申请日：2000-11-07
申请人： Makoto Iida , Masanori Kimura
发明人： Makoto Iida , Masanori Kimura
IPC分类号： C30B15/00 , C30B29/06 , H01L21/02 , H01L21/322 , H01L27/12 , C30B15/20
CPC分类号： C30B29/06 , C30B15/04 , C30B15/203 , H01L21/3225
摘要： A silicon single crystal wafer grown by the CZ method, which is doped with nitrogen and has an N-region for the entire plane and an interstitial oxygen concentration of 8 ppma or less, or which is doped with nitrogen and has an interstitial oxygen concentration of 8 ppma or less, and in which at least void type defects and dislocation clusters are eliminated from the entire plane, and a method for producing the same. Thus, there are provided a defect-free silicon single crystal wafer having an N-region for the entire plane, in which void type defects and dislocation clusters are eliminated, produced by the CZ method under readily controllable stable production conditions with a wide controllable range, and a method producing the same.
摘要翻译：通过CZ方法生长的硅单晶晶片，其掺杂有氮并具有用于整个平面的N区和8ppma或更小的间隙氧浓度，或者掺杂有氮并且具有间隙氧浓度 8ppma以下，并且其中至少从整个平面除去空隙型缺陷和位错簇及其制造方法。因此，提供了一种无缺陷的硅单晶晶片，其在具有宽的可控范围的容易控制的稳定生产条件下，通过CZ方法在整个平面上具有N区域，其中消除空隙型缺陷和位错簇，及其制造方法。

37. 发明授权

US08154170B2 Acoustic wave device and method for manufacturing the same 有权
标题翻译：声波装置及其制造方法
公开(公告)号：US08154170B2
公开(公告)日：2012-04-10
申请号：US12546188
申请日：2009-08-24
申请人： Masanori Kimura , Shunichi Aikawa , Keji Tsuda , Hikomasa Oshita
发明人： Masanori Kimura , Shunichi Aikawa , Keji Tsuda , Hikomasa Oshita
IPC分类号： H01L41/047 , H03H9/25
CPC分类号： H03H9/1092 , H01L2224/11 , H01L2224/13 , H03H9/059 , Y10T29/42
摘要： An acoustic wave device includes: a piezoelectric substrate on which an acoustic wave element and an electrode pad connected to the acoustic wave element are formed; a first resin part having a first opening located above a function area in which an acoustic wave is excited by the acoustic wave element and a second opening located above the electrode pad; a second resin part that covers the first opening and has a third opening located above the second opening; and a metal layer formed on the electrode pad in the second opening, the first opening and the second opening being inversely tapered.
摘要翻译：声波装置包括：形成声波元件和与声波元件连接的电极焊盘的压电基板; 第一树脂部分，其具有位于声波被声波元件激发的功能区域上方的第一开口和位于电极焊盘上方的第二开口; 第二树脂部分，其覆盖所述第一开口并且具有位于所述第二开口上方的第三开口; 以及形成在所述第二开口中的所述电极焊盘上的金属层，所述第一开口和所述第二开口呈倒锥形。

38. 发明授权

US07739702B2 Optical disk device having an optical pick-up module and tray arranged to carry out improved cooling 失效
标题翻译：具有光学拾取模块和托盘的光盘装置被布置成执行改进的冷却
公开(公告)号：US07739702B2
公开(公告)日：2010-06-15
申请号：US10937400
申请日：2004-09-10
申请人： Yoshinobu Soeda , Kaoru Sato , Munenori Aoyagi , Masanori Kimura , Takehiko Ide
发明人： Yoshinobu Soeda , Kaoru Sato , Munenori Aoyagi , Masanori Kimura , Takehiko Ide
IPC分类号： G11B33/14
CPC分类号： G11B17/056 , G11B33/142
摘要： An optical disk device includes an optical pick-up module including a rotating portion rotating an optical disk; a carriage mounting at least a light source and being provided movably within the optical pick-up module; and a cover having an opening formed thereon, a light being radiated from the light source through the opening toward the outside of the cover; and a tray supporting the optical pick-up module. The tray includes an optical disk attachment region portion opposed to the optical disk and an outside portion provided on an outside of the optical disk attachment region portion. The outside portion has a ledge along its portion adjacent to the circular perimeter of the optical disk. The optical disk, when mounted on the rotating portion, entirely lies between first and second planes, the first plane being defined by the surface of the cover and the second plane being defined by a first of opposing surfaces of the ledge, which first opposing surface is closer to the surface of the cover than is a second of the opposing surfaces of the ledge.
摘要翻译：光盘装置包括：光拾取模块，包括旋转光盘的旋转部分; 至少安装至少一个光源并且可移动地设置在所述光学拾取模块内的托架; 以及具有形成在其上的开口的盖，光从所述光源通过所述开口朝向所述盖的外部辐射; 以及支撑光学拾取模块的托盘。托盘包括与光盘相对的光盘安装区域部分和设置在光盘安装区域部分的外侧的外部部分。外部部分沿其邻近光盘的圆形周边的部分具有凸缘。当安装在旋转部分上时，光盘完全位于第一和第二平面之间，第一平面由盖的表面限定，第二平面由凸缘的相对的第一表面限定，第一相对表面比凸缘的相对表面的第二个更靠近盖的表面。

39. 发明授权

US07161574B2 Liquid crystal display element driving method and liquid crystal display using the same 有权
标题翻译：液晶显示元件驱动方法及使用其的液晶显示器
公开(公告)号：US07161574B2
公开(公告)日：2007-01-09
申请号：US10479152
申请日：2002-05-30
申请人： Masanori Kimura , Ichiro Sato , Katsuhiko Kumagawa
发明人： Masanori Kimura , Ichiro Sato , Katsuhiko Kumagawa
IPC分类号： G09G3/36
CPC分类号： G09G3/3614 , G09G3/3648 , G09G3/3677 , G09G2300/0491 , G09G2310/0205 , G09G2310/0235 , G09G2310/0251 , G09G2310/06 , G09G2310/061 , G09G2320/0252 , G09G2320/0257 , G09G2320/0261
摘要： A liquid crystal display element driving method or a liquid crystal display device uses a liquid crystal display element having a plurality of pixels constituting a screen; divides a frame period into a plurality of write periods and outputs gate signals to select the pixels sequentially during the write periods; forms each of source signals such that the source signal includes a picture signal and a non-picture signal respectively assigned for the write periods; writes each of the source signals corresponding to the selected pixels to each of the pixels with its polarity being alternated; and displays an image responsive to the source signals on the screen of the liquid crystal display element in such a manner that a transmittivity of liquid crystals of each of the pixels is controlled in accordance with the written source signal, wherein the non-picture signal having a polarity identical to that of the picture signal to be written subsequently is written to the pixels.
摘要翻译：液晶显示元件驱动方法或液晶显示装置使用具有构成屏幕的多个像素的液晶显示元件; 将帧周期划分为多个写周期，并且在写周期期间输出门信号以顺序选择像素; 形成每个源信号，使得源信号包括分别分配给写入周期的图像信号和非图像信号; 将与所选择的像素相对应的每个源信号写入每个像素，其极性是交替的; 并且以与液晶显示元件的屏幕上的源信号相对应的方式显示图像，使得根据写入的源信号来控制每个像素的液晶的透射率，其中非图像信号具有将与要写入的图像信号的极性相同的极性被写入像素。

40. 发明授权

US06914644B2 Liquid crystal device 有权
标题翻译：液晶装置
公开(公告)号：US06914644B2
公开(公告)日：2005-07-05
申请号：US09914232
申请日：2000-12-20
申请人： Tetsuo Fukami , Katsuhiko Kumagawa , Masanori Kimura , Satoshi Asada , Yoneharu Takubo
发明人： Tetsuo Fukami , Katsuhiko Kumagawa , Masanori Kimura , Satoshi Asada , Yoneharu Takubo
IPC分类号： G02F1/1362 , G09G3/36 , G02F1/136 , G02F1/1333 , G02F1/1343
CPC分类号： G02F1/1362 , G09G3/3614 , G09G3/3648 , G09G2320/02
摘要： In a liquid crystal panel in which pseudo dot inversion driving is performed, the occurrence of flicker or vertical and horizontal strings is prevented by preventing an alignment shift between individual layers during the fabrication of a TFT array from producing a difference between the respective abilities of thin-film TFTs to charge adjacent pixels (61, 62). For this purpose, the liquid crystal display panel is constructed such that two TFTs which are enclosed by two adjacent image signal lines (21, 22) and scan signal lines (3) and adjacent to each other along the signal lines (21, 22) have respective source electrodes (71, 72) adjacent to the different image signal lines (21, 22). The source electrodes (71, 72) and drain electrodes (81, 82) of the two TFTs connected to the adjacent pixels (61, 62) are alternately arranged such that variations caused by the alignment shift in the sizes and areas of overlapping portions between the individual layers of the TFTs are equal or the same.
摘要翻译：在进行伪点反转驱动的液晶面板中，通过在TFT阵列的制造期间防止各层之间的对准偏移来防止闪烁或垂直和水平线的发生，从而产生薄的各个能力之间的差异薄膜TFT以对相邻像素（61,62）充电。为此，液晶显示面板被构造为使得由两个相邻的图像信号线（21,22）和扫描信号线（3）包围并沿着信号线（21,22）彼此相邻的两个TFT，具有与不同图像信号线（21,22）相邻的各个源电极（71,72）。连接到相邻像素（61,62）的两个TFT的源电极（71,72）和漏电极（81,82）交替地布置成使得由两个TFT之间的重叠部分的尺寸和面积的对准偏移引起的变化 TFT的各层相同或相同。

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