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31. 发明专利

GB2409424B Method of forming dimensionally precise slots in resilient mask of miniature component carrier 未知
公开(公告)号：GB2409424B
公开(公告)日：2005-12-14
申请号：GB0506218
申请日：2003-10-03
申请人： ELECTRO SCIENT IND INC
发明人： SWENSON EDWARD J , STACKPOLE JOHN D , SUN YUNLONG , SAMMI MANOJ
IPC分类号： B23K26/18 , B23K26/38 , H05K13/00
摘要： A laser beam ( 102 ) cuts through a component carrier mask ( 96 ) made of thin elastomeric material such as silicone rubber to form slots ( 98 ) having slot openings of a desired shape. In a preferred embodiment, a light absorptivity enhancement material such as iron oxide introduced into the silicone rubber causes formation of a flexible support blank that operationally adequately absorbs light within a light absorption wavelength range. A beam positioner ( 106 ) receiving commands from a programmed controller causes a UV laser beam of a wavelength that is within the light absorption wavelength range to cut into the mask multiple slots with repeatable, precise dimensions. Each of the slots cut has opposed side margins that define between them a slot opening of suitable shape to receive a miniature component ( 10 ) and to exert on it optimal holding and release forces.

32. 发明专利

DE10296468T5 未知
公开(公告)号：DE10296468T5
公开(公告)日：2004-04-22
申请号：DE10296468
申请日：2002-12-17
申请人： ELECTRO SCIENT IND INC
发明人： SUN YUNLONG , SWENSON EDWARD J , HARRIS RICHARD S
IPC分类号： B23K26/00 , B23K26/06 , B23K26/067 , B23K101/38 , G11C17/14 , H01L21/82 , H01L21/8242 , H01L23/525 , H01L27/10 , H01L27/108 , H01S3/00 , H01S3/10 , H01S3/082
摘要： A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 500 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single "pulse" by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.

33. 发明专利

AU2776401A Laser system and method for processing a memory link with a burst of laser pulses having ultrashort pulsewidths 未知
公开(公告)号：AU2776401A
公开(公告)日：2001-07-24
申请号：AU2776401
申请日：2001-01-09
申请人： ELECTRO SCIENT IND INC
发明人： SUN YUNLONG , SWENSON EDWARD J , HARRIS RICHARD S
IPC分类号： B23K26/00 , B23K26/04 , B23K26/06 , B23K26/40 , B23K101/42 , G03F7/20 , H01L21/768 , H01L21/82 , H01L23/525 , H01L27/10 , H05K3/00 , H05K3/22
摘要： A burst (50) of ultrashort laser pulses (52) is employed to sever a conductive link (22) in a nonthermal manner and offers a wider processing window, eliminates undesirable HAZ effects, and achieves superior severed link quality. The duration of the burst (50) is preferably in the range of 10 ns to 500 ns; and the pulse width of each laser pulse (52) within the burst (50) is generally shorter than 25 ps, preferably shorter than or equal to 10 ps, and most preferably about 10 ps to 100 fs or shorter. The burst (50) can be treated as a single "pulse" by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a burst (50) of laser pulses (52) at each link (22). Conventional wavelengths or their harmonics can be employed.

34. 发明专利

CA2393541A1 SWITCHABLE WAVELENGTH LASER-BASED ETCHED CIRCUIT BOARD PROCESSING SYSTEM 未知
公开(公告)号：CA2393541A1
公开(公告)日：2001-06-14
申请号：CA2393541
申请日：2000-12-05
申请人： ELECTRO SCIENT IND INC
发明人： SWENSON EDWARD , SUN YUNLONG
IPC分类号： B23K26/00 , B23K26/06 , B23K26/073 , B23K26/38 , B23K101/42 , H01S3/00 , H01S3/109 , H01S3/115 , H05K3/00 , H05K3/40 , H05K3/46
摘要： A wavelength switchable laser (10) of this invention is based on a solid-sta te laser source (12) in which a fourth harmonic UV laser beam (26) is ordinaril y used for processing, and a second harmonic "green" laser beam (28) is dumped and wasted. However, thisinvention uses the ordinarily wasted green laser be am for processing ECB (30) conductor layers (32, 36), which enhances processing throughout because of the higher power of thegreen energy than of the UV energy. A Pockel cell (16) effects laser beam polarizationswitching that causes either the green beam or the UV beam to be directed to the ECB forprocessing different materials. This invention requires only a single rai l laser source and is, therefore, simple, cost effective, efficient, inherentl y aligned, and has high processing throughput.

35. 发明专利

HK1022049A1 LASER BASED METHOD AND SYSTEM FOR INTEGRATED CIRCUIT REPAIR OR RECONFIGURATION 未知
公开(公告)号：HK1022049A1
公开(公告)日：2000-07-21
申请号：HK00100967
申请日：2000-02-18
申请人： ELECTRO SCIENT IND INC
发明人： SWENSON EDWARD J , SUN YUNLONG , HARRIS RICHARD S
IPC分类号： H01L21/302 , H01L21/3205 , H01L21/768 , H01L21/82 , H01L23/52 , H01L
摘要： The present invention provides a method and system for irradiating resist material from multiple target positions (150) on one or more IC chips (12) with individually directed laser output pulses (74, 94). In one embodiment, an IC (12), including one or more etch targets (104, 106) such as conductive links (72, 92), is coated with an etch protection layer (90) of photoresist material. Then, position data direct, toward multiple positions (150) on the photoresist material, individual laser output pulses (94) of predetermined parameters selected to expose the photoresist material. Because photoresist exposure requires less energy than link blowing, low-power UV lasers (120) can be employed, and their shorter wavelengths permit a smaller practical laser output spot size (98). Because the nonablative process does not generate debris, an optical component (148) can be brought within 10 mm of etch protection layer (90) to focus the laser output pulses (94) to a spot size of less than two times the wavelength of laser output (140). Thus, an advantage of this embodiment permits microcircuit manufacturers to decrease the pitch distance (28) between circuit elements (14). After the photoresist layer (90) is developed, the accessible etch target (92) can be etched to repair or reconfigure the IC device. In another embodiment, slightly higher UV power laser output pulses (74) can be employed to ablate an etch protection resist layer (70) so any type of etch protection coating such as nonphotosensitive resist materials can be utilized with substantial manufacturing and cost benefits. Etching of the accessible etch targets (60, 62) follows this process.

36. 发明专利

DE69507713D1 未知
公开(公告)号：DE69507713D1
公开(公告)日：1999-03-18
申请号：DE69507713
申请日：1995-11-20
申请人： ELECTRO SCIENT IND INC
发明人： SUN YUNLONG , SWENSON EDWARD
IPC分类号： B23K26/00 , B23K26/06

37. 发明专利

DE69936646D1 未知
公开(公告)号：DE69936646D1
公开(公告)日：2007-09-06
申请号：DE69936646
申请日：1999-06-04
申请人： ELECTRO SCIENT IND INC
发明人： SUN YUNLONG , SWENSON EDWARD
IPC分类号： H01L21/3205 , H01L21/768 , H01L21/82 , H01L23/52
摘要： Ultraviolet (UV) laser output (88) exploits the absorption characteristics of the materials from which an electrically conductive link (42), an underlying semiconductor substrate (50), and passivation layers (48 and 54) are made to effectively remove the link (42) without damaging the substrate (50). The UV laser output (88) forms smaller than conventional IR laser link-blowing spot diameters (58) because of its shorter wavelength, thus permitting the implementation of greater circuit density. A passivation layer positioned between the link and the substrate can be formulated to be sufficiently absorptive to UV laser energy and sufficiently thick to attenuate the laser energy to prevent it from damaging the substrate (50) in the laser beam spot area (43) in both the off-link and link-overlapped portions. The UV laser output (88) can be employed to controllably ablate a depthwise portion of the passivation layer (54) underlying the link (42) to facilitate complete removal of the link (42). In addition, direct ablation of the passivation layer (48) with the UV laser output (88) facilitates predictable and consistent link severing profiles. The absorption characteristics of the passivation material also reduces the risk of damage to neighboring links or other active structures.

38. 发明专利

GB2435771A Multiple-wavelength laser micromachining of semiconductor devices 未知
公开(公告)号：GB2435771A
公开(公告)日：2007-09-05
申请号：GB0711068
申请日：2007-06-07
申请人： ELECTRO SCIENT IND INC
发明人： SUN YUNLONG , BRULAND KELLY , HAINSEY ROBERT F , HARRIS RICHARD , JORDENS WILLIAM J , LO HO WAI , SUN LEI
IPC分类号： H01S3/13
摘要： A specially shaped laser pulse energy profile (98, 104, 156) characterized by different laser wavelengths at different times of the profile provides reduced, controlled jitter to enable semiconductor device micromachining that achieves high quality processing and a smaller possible spot size.

39. 发明专利

GB2420307B Methods of and laser systems for link processing using laser pulses with specially tailored power profiles 未知
公开(公告)号：GB2420307B
公开(公告)日：2007-04-11
申请号：GB0604738
申请日：2004-08-18
申请人： ELECTRO SCIENT IND INC
发明人： SUN YUNLONG , HARRIS RICHARD S , LO HO WAI , BAIRD BRIAN W , JOHNSON JAY CHRISTOPHER , HAINSEY ROBERT F
IPC分类号： B23K26/00 , B23K20060101 , B23K26/06 , B23K26/38 , H01S20060101 , H04J14/02
摘要： A laser pulse with a specially tailored temporal power profile, instead of a conventional temporal shape or substantially square shape, severs an IC link. The specially tailored laser pulse preferably has either an overshoot at the beginning of the laser pulse or a spike peak within the duration of the laser pulse. The timing of the spike peak is preferably set ahead of the time when the link is mostly removed. A specially tailored laser pulse power profile allows the use of a wider laser pulse energy range and shorter laser wavelengths, such as the green and UV, to sever the links without appreciable damage to the substrate and passivation structure material located on either side of and underlying the links.

40. 发明专利

GB2420004B Laser pulse picking employing controlled aom loading 未知
公开(公告)号：GB2420004B
公开(公告)日：2007-01-03
申请号：GB0601470
申请日：2004-05-05
申请人： ELECTRO SCIENT IND INC
发明人： SUN YUNLONG , NILSEN BRADY E , HEMENWAY DAVID M , SUN LEI
IPC分类号： H01L21/268 , B23K26/06 , B23K26/08 , B23K26/38 , H01S3/00
摘要： A laser beam switching system employs a laser coupled to a beam switching device that causes a laser beam to switch between first and second beam positioning heads such that while the first beam positioning head is directing the laser beam to process a workpiece target location, the second beam positioning head is moving to another target location and vice versa. A preferred beam switching device includes first and second AOMs positioned such that the laser beam passes through the AOMs without being deflected. When RF is applied to the first AOM, the laser beam is diffracted toward the first beam positioning head, and when RF is applied to the second AOM, the laser beam is diffracted toward the second beam positioning head.

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