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31. 发明授权

US07614034B2 Method and apparatus for generating OPC rules for placement of scattering bar features utilizing interface mapping technology 失效
标题翻译：使用接口映射技术生成用于放置散射条特征的OPC规则的方法和装置
公开(公告)号：US07614034B2
公开(公告)日：2009-11-03
申请号：US11594248
申请日：2006-11-08
申请人： Douglas Van Den Broeke , Sangbong Park , Chung-Wei Hsu , Jang Fung Chen
发明人： Douglas Van Den Broeke , Sangbong Park , Chung-Wei Hsu , Jang Fung Chen
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/36
摘要： A method of applying optical proximity correction features to a mask having a plurality of features to be imaged. The method includes the steps of defining a set of process parameters to be utilized to image the mask; defining a set of pitch ranges corresponding to pitches exhibited by the plurality of features to be imaged; determining an interference map for at least one of the pitch ranges; and generating a set of rules for positioning scattering bars adjacent the plurality of features based on the interference map, where the set of rules governs scattering bar placement for features having a pitch which falls within the pitch range utilized to generate the interference map.
摘要翻译：将光学邻近校正特征应用于具有要成像的多个特征的掩模的方法。该方法包括以下步骤：定义要用于对掩模进行成像的一组过程参数; 定义对应于待成像的多个特征所展示的间距的一组音调范围; 确定所述音高范围中的至少一个的干涉图; 以及基于所述干涉图来生成用于定位与所述多个特征相邻的散射条的一组规则，其中所述规则集合管理具有落在用于生成所述干涉图的所述音调范围内的音调的特征的散射棒放置。

32. 发明授权

US07604909B2 Method for improved manufacturability and patterning of sub-wavelength contact hole mask 失效
标题翻译：改进亚波长接触孔掩模的可制造性和图案化的方法
公开(公告)号：US07604909B2
公开(公告)日：2009-10-20
申请号：US11647599
申请日：2006-12-29
申请人： Chung-Wei Hsu , Douglas Van Den Broeke , Jang Fung Chen
发明人： Chung-Wei Hsu , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F1/00 , G03F5/00
CPC分类号： G03F1/36
摘要： A method of applying optical proximity correction features to a mask having a target pattern comprising a plurality of features to be imaged. The method includes the steps of defining a set of process parameters to be utilized to image the mask; determining an interference map based on the process parameters and the target pattern; defining an area of influence which represents the area about a given feature in the target pattern in which scattering bars will be utilized in the mask; and disposing a scattering bar in the mask adjacent the given feature in a location indicated by said interference map only within the area of influence of the given feature.
摘要翻译：一种将光学邻近校正特征应用于具有包括要成像的多个特征的目标图案的掩模的方法。该方法包括以下步骤：定义要用于对掩模进行成像的一组过程参数; 基于过程参数和目标模式确定干涉图; 定义影响区域，其表示在掩模中将使用散射条的目标图案中的给定特征的区域; 以及仅在给定特征的影响区域内，在由所述干涉图指示的位置中的与给定特征相邻的掩模中布置散射条。

33. 发明授权

US07594199B2 Method of optical proximity correction design for contact hole mask 有权
标题翻译：接触孔掩模的光学邻近校正设计方法
公开(公告)号：US07594199B2
公开(公告)日：2009-09-22
申请号：US10756829
申请日：2004-01-14
申请人： Robert John Socha , Xuelong Shi , Douglas Van Den Broeke , Jang Fung Chen
发明人： Robert John Socha , Xuelong Shi , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G06F17/50
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/70125
摘要： Disclosed concepts include a method of optimizing an illumination profile of a pattern to be formed in a surface of a substrate. Illumination is optimized by defining a transmission cross coefficient (“TCC”) function determined in accordance with an illumination pupil and a projection pupil corresponding to an illuminator, representing at least one resolvable feature of a mask to be printed on the substrate by at least one impulse function, and creating an interference map of a predetermined order based on the at least one impulse function and the TCC function, wherein the interference map represents the at least one resolvable feature to be printed on the substrate and areas of destructive interference.
摘要翻译：公开的概念包括优化待形成在基板的表面中的图案的照明轮廓的方法。通过定义根据照明光瞳确定的透射交叉系数（“TCC”）函数和对应于照明器的投影光瞳来优化照明，其表示待印刷在基板上的掩模的至少一个可分辨特征至少一个脉冲功能，以及基于所述至少一个脉冲功能和所述TCC功能创建预定顺序的干涉图，其中所述干涉图表示要印刷在所述基板上的所述至少一个可分辨特征以及相消干涉区域。

34. 发明授权

US08910091B2 Method, program product and apparatus for performing double exposure lithography 有权
标题翻译：用于进行双曝光光刻的方法，程序产品和装置
公开(公告)号：US08910091B2
公开(公告)日：2014-12-09
申请号：US13401820
申请日：2012-02-21
申请人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
发明人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
IPC分类号： G06F17/50 , G03F7/20 , G03F1/00
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/70 , G03F7/70466 , G06F2217/08 , G06F2217/12
摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.
摘要翻译：公开了一种基于具有待成像在基板上的特征的目标图案产生互补掩模以在多次曝光光刻成像过程中使用的方法。该方法包括定义对应于目标图案的初始H掩模和初始V掩模; 识别V面罩中H面罩和垂直关键特征的水平关键特征; 将第一相移和第一百分比传输分配给要在H掩模中形成的水平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。

35. 发明申请

US20120122023A1 Method and Apparatus for Performing Model-Based OPC for Pattern Decomposed Features 失效
标题翻译：用于对模式分解特征执行基于模型的OPC的方法和装置
公开(公告)号：US20120122023A1
公开(公告)日：2012-05-17
申请号：US13358497
申请日：2012-01-25
申请人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F1/36 , G06F17/50
CPC分类号： G06T7/0004 , G03F1/36 , G03F1/70 , G03F7/70466 , G03F7/70475
摘要： A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.
摘要翻译：一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

36. 发明授权

US07681171B2 Method, program product and apparatus for performing double exposure lithography 有权
标题翻译：用于进行双曝光光刻的方法，程序产品和装置
公开(公告)号：US07681171B2
公开(公告)日：2010-03-16
申请号：US11402273
申请日：2006-04-12
申请人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
发明人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/70 , G03F7/70466 , G06F2217/08 , G06F2217/12
摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process. The method includes the steps of: defining an initial H-mask corresponding to the target pattern; defining an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask having a width which is less than a predetermined critical width; identifying vertical critical features in the V-mask having a width which is less than a predetermined critical width; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask. The non-critical features are those features having a width which is greater than or equal to the predetermined critical width. The non-critical features are formed in the H-mask and the V-mask utilizing chrome. The target pattern is then imaged on the substrate by imaging both the H-mask and V-mask.
摘要翻译：基于具有要在多曝光光刻成像处理中使用的基板上成像的特征的目标图案产生互补掩模的方法。该方法包括以下步骤：定义对应于目标图案的初始H掩码; 定义对应于目标图案的初始V掩模; 识别具有小于预定临界宽度的宽度的H掩模中的水平临界特征; 识别具有小于预定临界宽度的宽度的V形掩模中的垂直关键特征; 将第一相移和第一百分比传输分配给要在H掩模中形成的水平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。非关键特征是具有大于或等于预定临界宽度的宽度的那些特征。非关键特征形成在H掩模和使用铬的V形掩模中。然后通过成像H掩模和V掩模来将目标图案成像在衬底上。

37. 发明授权

US07617476B2 Method for performing pattern pitch-split decomposition utilizing anchoring features 失效
标题翻译：使用锚固特征进行图案间距分解分解的方法
公开(公告)号：US07617476B2
公开(公告)日：2009-11-10
申请号：US11898647
申请日：2007-09-13
申请人： Duan-Fu Stephen Hsu , Noel Corcoran , Jang Fung Chen , Douglas Van Den Broeke
发明人： Duan-Fu Stephen Hsu , Noel Corcoran , Jang Fung Chen , Douglas Van Den Broeke
IPC分类号： G06F17/50
CPC分类号： G03F7/70466 , G03F1/70 , G03F7/70433
摘要： A method for decomposing a target pattern containing features to be printed on a wafer into multiple patterns. The method includes the steps of: (a) determining a minimum critical dimension and pitch associated with a process to be utilized to image the multiple patterns; (b) generating an anchoring feature; (c) disposing the anchoring feature adjacent a first feature of the target pattern; (d) growing the anchoring feature a predetermined amount so as to define a first area; (e) assigning any feature within the first area to a first pattern; (f) disposing the anchoring feature adjacent a second feature of the target pattern; (g) growing the anchoring feature the predetermined amount so as to define a second area; and (h) assigning any feature within the second area to a second pattern. Steps (c)-(h) are then repeated until the densely spaced features within the target pattern have been assigned to either the first or second pattern.
摘要翻译：一种用于将包含要印刷在晶片上的特征的目标图案分解为多个图案的方法。该方法包括以下步骤：（a）确定与要用于对多个图案成像的过程相关联的最小临界尺寸和间距; （b）产生锚固特征; （c）将所述锚定特征设置在所述目标图案的第一特征附近; （d）使锚定特征增长预定量以限定第一区域; （e）将第一区域内的任何特征分配给第一模式; （f）将所述锚定特征设置在所述目标图案的第二特征附近; （g）使锚定特征增长预定量以限定第二区域; 和（h）将第二区域内的任何特征分配给第二模式。然后重复步骤（c） - （h），直到目标图案内密集间隔的特征被分配给第一或第二图案。

38. 发明授权

US08495529B2 Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography 有权
标题翻译：用于基于模型的散射棒放置的方法，程序产品和装置，用于在四分之一波长光刻中增强聚焦深度
公开(公告)号：US08495529B2
公开(公告)日：2013-07-23
申请号：US12613344
申请日：2009-11-05
申请人： Douglas van Den Broeke , Jang Fung Chen
发明人： Douglas van Den Broeke , Jang Fung Chen
IPC分类号： G06F17/50
CPC分类号： G03F7/70441 , G03F1/36
摘要： A method of generating a mask having optical proximity correction features. The method includes the steps of: (a) obtaining a desired target pattern having features to be imaged on a substrate; (b) determining a first focus setting to be utilized when imaging the mask; (c) determining a first interference map based on the target pattern and the first focus setting; (d) determining a first seeding site representing the optimal placement of an assist feature within the mask relative to a feature to be imaged on the basis of the first interference map; (e) selecting a second focus setting which represents a predefined amount of defocus relative to the first focus setting; (f) determining a second interference map based on the target pattern and the second focus setting; (g) determining a second seeding site representing the optimal placement of an assist feature within the mask relative to the feature to be imaged on the basis of the second interference map; and (h) generating an assist feature having a shape which encompasses both the first seeding site and the second seeding site.
摘要翻译：一种产生具有光学邻近校正特征的掩模的方法。该方法包括以下步骤：（a）获得具有要在基底上成像的特征的期望目标图案; （b）确定在对所述掩模进行成像时要利用的第一焦点设置; （c）基于目标图案和第一焦点设置确定第一干涉图; （d）基于所述第一干涉图，确定表示所述掩模内的辅助特征相对于要成像的特征的最佳布置的第一播种站点; （e）选择表示相对于第一焦点设置的预定义散焦量的第二焦点设置; （f）基于目标图案和第二焦点设置确定第二干涉图; （g）基于所述第二干涉图，确定代表所述掩模内的辅助特征相对于要成像的特征的最佳布置的第二播种站点; 和（h）产生具有包含第一播种部位和第二播种部位的形状的辅助特征。

39. 发明申请

US20130182940A1 Method and Apparatus for Performing Model-Based OPC for Pattern Decomposed Features 失效
标题翻译：用于对模式分解特征执行基于模型的OPC的方法和装置
公开(公告)号：US20130182940A1
公开(公告)日：2013-07-18
申请号：US13786249
申请日：2013-03-05
申请人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G06T7/00
CPC分类号： G06T7/0004 , G03F1/36 , G03F1/70 , G03F7/70466 , G03F7/70475
摘要： A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.
摘要翻译：一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

40. 发明授权

US08391605B2 Method and apparatus for performing model-based OPC for pattern decomposed features 失效
标题翻译：用于模式分解特征执行基于模型的OPC的方法和装置
公开(公告)号：US08391605B2
公开(公告)日：2013-03-05
申请号：US13358497
申请日：2012-01-25
申请人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G06K9/00 , G06F17/50
CPC分类号： G06T7/0004 , G03F1/36 , G03F1/70 , G03F7/70466 , G03F7/70475
摘要： A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.
摘要翻译：一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

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