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31. 发明授权

US07995625B2 Resonator of hybrid laser diode 失效
标题翻译：混合激光二极管谐振器
公开(公告)号：US07995625B2
公开(公告)日：2011-08-09
申请号：US12499069
申请日：2009-07-07
申请人： Young Ahn Leem , Jung-Ho Song , Kisoo Kim , Gyungock Kim
发明人： Young Ahn Leem , Jung-Ho Song , Kisoo Kim , Gyungock Kim
IPC分类号： H01S3/098 , H01S3/03 , H01S3/082
CPC分类号： H01S5/026 , H01S5/021 , H01S5/0215 , H01S5/0655 , H01S5/1014 , H01S5/1025 , H01S5/1032 , H01S5/1064 , H01S5/125
摘要： Provided is a resonator of a hybrid laser diode. The resonator includes: a substrate including a semiconductor layer where a hybrid waveguide, a multi-mode waveguide, and a single mode waveguide are connected in series; a compound semiconductor waveguide, provided on the hybrid waveguide of the semiconductor layer, having a tapered coupling structure at one end of the compound semiconductor waveguide, the tapered coupling structure overlapping the multi-mode waveguide partially; and a reflection part provided on one end of the single mode waveguide. The multi-mode waveguide has a narrower width than the hybrid waveguide and the single mode waveguide has a narrower width than the multi-mode waveguide.
摘要翻译：提供了一种混合激光二极管的谐振器。谐振器包括：包括混合波导，多模波导和单模波导串联连接的半导体层的基板; 复合半导体波导，设置在半导体层的混合波导上，在化合物半导体波导的一端具有锥形耦合结构，锥形耦合结构部分地与多模波导重叠; 以及设置在单模波导的一端的反射部。多模波导具有比混合波导窄的宽度，并且单模波导具有比多模波导窄的宽度。

32. 发明申请

US20100111469A1 SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING GRATING COUPLER FOR OPTICAL COMMUNICATION AND METHODS OF FORMING THE SAME 有权
标题翻译：半导体集成电路，包括用于光通信的光栅耦合器及其形成方法
公开(公告)号：US20100111469A1
公开(公告)日：2010-05-06
申请号：US12684677
申请日：2010-01-08
申请人： Junghyung PYO , O-Kyun Kwon , Gyungock Kim
发明人： Junghyung PYO , O-Kyun Kwon , Gyungock Kim
IPC分类号： G02B6/122
CPC分类号： G02B6/34 , G02B6/124 , G02B6/30
摘要： Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.
摘要翻译：提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

33. 发明授权

US07646942B2 Silicon semiconductor based high-speed ring optical modulator 失效
标题翻译：硅半导体高速环形光调制器
公开(公告)号：US07646942B2
公开(公告)日：2010-01-12
申请号：US11833004
申请日：2007-08-02
申请人： Jeong Woo Park , Gyungock Kim , Hyun Soo Kim , Bongki Mheen
发明人： Jeong Woo Park , Gyungock Kim , Hyun Soo Kim , Bongki Mheen
IPC分类号： G02F1/035 , G02B6/26
CPC分类号： G02F1/025 , G02F1/3133 , G02F2001/0152 , G02F2203/15
摘要： Provided is a high-speed ring optical modulator based on a silicon semiconductor, having increased optical modulation speed. The high-speed ring optical modulator includes a ring optical waveguide including a portion in which the refractive index varies, that is, a refractive index variation portion, and an optical waveguide having a constant refractive index. The refractive index variation portion comprises a bipolar transistor. Thus carriers can be supplied to and discharged from the refractive index variation portion, through which light is transmitted, at high speed, and thus the optical modulation speed can be increased.
摘要翻译：提供了一种基于硅半导体的高速环形光调制器，其具有增加的光调制速度。高速环形光调制器包括环形光波导，其包括折射率变化的部分，即折射率变化部分和具有恒定折射率的光波导。折射率变化部分包括双极晶体管。因此，可以高速地将载流子提供给发射光的折射率变化部分放出，从而可以提高光调制速度。

34. 发明申请

US20090237770A1 OPTICAL DEVICE INCLUDING GATE INSULATOR WITH MODULATED THICKNESS 有权
标题翻译：光学装置，包括具有调制厚度的门绝缘体
公开(公告)号：US20090237770A1
公开(公告)日：2009-09-24
申请号：US12375343
申请日：2007-04-24
申请人： Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Gyungock Kim
发明人： Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Gyungock Kim
IPC分类号： G02F1/015 , H01L29/78 , H01L33/00
CPC分类号： G02F1/025 , G02F1/225 , G02F1/3132 , H01L31/105
摘要： Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has a ? shape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.
摘要翻译：提供了一种具有改善的相移和光传播损耗的光学器件，而不会降低光学器件的动态特性。光学器件包括掺杂有第一类导电杂质并具有均匀厚度的第一半导体层; 栅绝缘层，形成在第一半导体层的一部分上，并且具有薄的中心部分; 以及第二半导体层，其覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电类型杂质相反的第二类型的导电杂质。

35. 发明申请

US20050098836A1 Current-jump-control circuit including abrupt metal-insulator phase transition device 有权
标题翻译：电流跳跃控制电路包括突变金属 - 绝缘体相变装置
公开(公告)号：US20050098836A1
公开(公告)日：2005-05-12
申请号：US10866274
申请日：2004-06-10
申请人： Hyun Kim , Doo Youn , Kwang Kang , Byung Chae , Yong Lim , Seong Kim , Sungyul Maeng , Gyungock Kim
发明人： Hyun Kim , Doo Youn , Kwang Kang , Byung Chae , Yong Lim , Seong Kim , Sungyul Maeng , Gyungock Kim
IPC分类号： H01L21/822 , H01L27/04 , H01L29/78 , H01L45/00 , H01L49/00 , H02H9/02 , H01L29/94
CPC分类号： H01L45/00
摘要： A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.
摘要翻译：提出了包括突变金属 - 绝缘体相变装置的电流跳跃控制电路，并且包括源极，突变金属 - 绝缘体相变装置和电阻元件。突变金属 - 绝缘体相变装置包括连接到源极的第一和第二电极，并且当在第一电极和第二电极之间施加电场时，显示出电流跳跃的突变金属 - 绝缘体相变特性。电阻元件连接在源极和突变金属 - 绝缘体相变器件之间，以控制流过突发金属 - 绝缘体相变器件的跳跃电流。根据上述电流控制电路，能够防止突变金属 - 绝缘体相变装置由于大量的电流而发生故障，因此电流跳跃控制电路可以应用于各种应用领域。

36. 发明授权

US08520985B2 Mach-Zehnder modulator 失效
标题翻译：马赫 - 曾德调制器
公开(公告)号：US08520985B2
公开(公告)日：2013-08-27
申请号：US12975161
申请日：2010-12-21
申请人： Jeong Woo Park , Gyungock Kim
发明人： Jeong Woo Park , Gyungock Kim
IPC分类号： G02F1/025 , G02F1/035
CPC分类号： G02F1/025 , G02F1/2257 , G02F2001/212 , G02F2201/12 , G02F2202/105
摘要： Provided is a Mach-Zehnder modulator. The Mach-Zehnder modulator comprises an input wave guide and an output wave guide arranged on a substrate, a first branch wave guide and a second branch wave guide connected in parallel between the input and output wave guides, and a connecting region configured to connect the first branch wave guide and the second branch wave guide. Each of the first and second branch wave guides comprises first doped regions doped with a first dopant and second doped regions doped with a second dopant having different conductivity from the first dopant, and the connecting region is doped with the first dopant and arranged between the first regions of the first and second branch wave guides.
摘要翻译：提供了马赫 - 曾德尔调制器。马赫 - 策德尔调制器包括布置在基板上的输入波导和输出波导，在输入和输出波导之间并联连接的第一分支波导和第二分支波导，以及连接区域，第一分支波导和第二分支波导。第一和第二分支波导中的每一个包括掺杂有第一掺杂物的第一掺杂区域和掺杂有与第一掺杂剂不同导电性的第二掺杂剂的第二掺杂区域，并且连接区域掺杂有第一掺杂剂并且布置在第一掺杂区域之间第一和第二分支波导的区域。

37. 发明申请

US20130156369A1 RING RESONATORS HAVING Si AND/OR SiN WAVEGUIDES 审中-公开
标题翻译：具有Si和/或SiN波长的环形谐振器
公开(公告)号：US20130156369A1
公开(公告)日：2013-06-20
申请号：US13535746
申请日：2012-06-28
申请人： Sahnggi Park , Kap-Joong Kim , In Gyoo Kim , Gyungock Kim
发明人： Sahnggi Park , Kap-Joong Kim , In Gyoo Kim , Gyungock Kim
IPC分类号： G02B6/12
CPC分类号： G02B6/12007 , G02B2006/12061
摘要： Provided is a ring resonator including first and second waveguides disposed spaced apart from each other, on a substrate, and at least one channel including at least one ring waveguide arranged in a row between the first and second waveguides. The first and second waveguides and the ring waveguide may be formed of silicon, a width of the ring waveguide may range from 0.7 μm to 1.5 μm, a height of the ring waveguide may range from 150 nm to 300 nm, and a space between the first and second waveguides and the ring waveguide most adjacent thereto may range from 250 nm to 1 mm.
摘要翻译：提供了一种环形谐振器，包括彼此间隔开地布置在衬底上的第一和第二波导，以及包括在第一和第二波导之间布置成一行的至少一个环形波导的至少一个通道。第一和第二波导和环形波导可以由硅形成，环形波导的宽度可以在0.7μm到1.5μm的范围内，环形波导的高度可以在150nm到300nm的范围内，第一和第二波导以及与其最相邻的环形波导可以在250nm至1mm的范围内。

38. 发明授权

US08346027B2 Electro-optic device 失效
标题翻译：电光装置
公开(公告)号：US08346027B2
公开(公告)日：2013-01-01
申请号：US12816550
申请日：2010-06-16
申请人： Jeong Woo Park , Jongbum You , Gyungock Kim
发明人： Jeong Woo Park , Jongbum You , Gyungock Kim
IPC分类号： G02F1/035
CPC分类号： G02F1/2257 , G02F1/015 , G02F2001/212
摘要： Provided is an electro-optic device. The electro-optic device includes an input Y-branch comprising a first input branch and a second input branch, an output Y-branch comprising a first output branch and a second output branch, a first optical modulator and a second optical modulator connected in series between the first input branch and the first output branch, and a third optical modulator connecting the second input branch to the second output branch. The first optical modulator comprises a PIN diode, and each of the second optical modulator and the third optical modulator comprises a PN diode.
摘要翻译：提供了一种电光装置。电光装置包括：输入Y分支，包括第一输入分支和第二输入分支，包括第一输出分支和第二输出分支的输出Y分支，串联连接的第一光调制器和第二光调制器在第一输入分支和第一输出分支之间，以及将第二输入分支连接到第二输出分支的第三光调制器。第一光调制器包括PIN二极管，并且第二光调制器和第三光调制器中的每一个包括PN二极管。

39. 发明授权

US08346026B2 Photoelectric device using PN diode and silicon integrated circuit (IC) including the photoelectric device 失效
标题翻译：光电器件采用PN二极管和硅集成电路（IC），包括光电器件
公开(公告)号：US08346026B2
公开(公告)日：2013-01-01
申请号：US12517802
申请日：2007-08-07
申请人： Jeong-Woo Park , Gyungock Kim , Young-Ahn Leem , Hyun-Soo Kim , Bongki Mheen
发明人： Jeong-Woo Park , Gyungock Kim , Young-Ahn Leem , Hyun-Soo Kim , Bongki Mheen
IPC分类号： G02F1/035 , G02B6/12 , G02B6/00
CPC分类号： H01L31/12 , H01L27/144
摘要： Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.
摘要翻译：提供了使用PN二极管的光电装置和包括光电装置的硅集成电路（IC）。光电装置包括：基板; 以及在所述衬底上形成为PN二极管的光波导，其中所述PN二极管的结界面沿光前进的方向形成; 以及向PN二极管施加反向电压的电极，其中PN二极管的N型和P型半导体以高浓度掺杂，并且N型半导体的掺杂浓度高于或等于P 型半导体。

40. 发明申请

US20110304403A1 Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuit 审中-公开
标题翻译：基于金属 - 绝缘体转换器件的振荡电路及驱动振荡电路的方法
公开(公告)号：US20110304403A1
公开(公告)日：2011-12-15
申请号：US13137267
申请日：2011-08-02
申请人： Yong-wook Lee , Bongjun Kim , Sungyoul Choi , Jungwook Lim , Sun-Jin Yun , Byung-Gyu Chae , Hyun-Tak Kim , Gyungock Kim
发明人： Yong-wook Lee , Bongjun Kim , Sungyoul Choi , Jungwook Lim , Sun-Jin Yun , Byung-Gyu Chae , Hyun-Tak Kim , Gyungock Kim
IPC分类号： H03B7/14
CPC分类号： H01L49/003 , H01L29/94 , H03B17/00
摘要： Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electrical power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.
摘要翻译：提供了一种基于金属 - 绝缘体转变（MIT）器件的振荡电路，其可以使用MIT器件产生简单且非常高的振荡频率，以及驱动振荡电路的方法。振荡电路包括MIT设备，其包括MIT薄膜和连接到MIT薄膜的电极薄膜，并且其中由于MIT产生电压而产生突然MIT;串联连接到MIT设备的电阻器，限制施加电流的最大量并向MIT装置施加直流恒定电压的电源，以及在MIT装置上照射电磁波的光源，其中通过使用光照射电磁波来产生振荡特性资源。

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