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31. 发明申请

US20070199579A1 Substrate treatment method, substrate treatment apparatus, and semiconductor device manufacturing method 审中-公开
标题翻译：基板处理方法，基板处理装置以及半导体装置的制造方法
公开(公告)号：US20070199579A1
公开(公告)日：2007-08-30
申请号：US11706992
申请日：2007-02-16
申请人： Kei Hayasaki , Eishi Shiobara , Shinichi Ito
发明人： Kei Hayasaki , Eishi Shiobara , Shinichi Ito
IPC分类号： C23G1/00 , B08B7/04 , B08B3/00 , B08B7/00
CPC分类号： H01L21/67051
摘要： According to an aspect of the invention, there is provided a substrate treatment method including performing a treatment including intermittently supplying a cleaning fluid to a central area of a treatment substrate while continuously rotating the substrate, and continuously supplying a cleaning fluid to a peripheral area of the substrate, thereby treating the substrate so that a liquid film on the substrate monotonously increases from the central area to the peripheral area along with the rotation of the substrate and so that the central area substantially dries.
摘要翻译：根据本发明的一个方面，提供了一种基板处理方法，包括进行处理，包括在连续旋转基板的同时向处理基板的中心区域间歇地供给清洗流体，并且将清洁流体连续供给到周边区域从而处理衬底，使得衬底上的液膜随着衬底的旋转而从中心区域逐渐增加到周边区域，并且使得中心区域基本上变干。

32. 发明申请

US20070082295A1 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20070082295A1
公开(公告)日：2007-04-12
申请号：US11543208
申请日：2006-10-05
申请人： Kazuya Fukuhara , Eishi Shiobara
发明人： Kazuya Fukuhara , Eishi Shiobara
IPC分类号： G03F7/20
CPC分类号： G03F7/70341 , G03F7/70625
摘要： A method of manufacturing a semiconductor device using immersion exposure in which exposure is carried out with an immersion exposure liquid interposed between a projection lens and a substrate, includes preparing a photomask on which a plurality of patterns are formed, projecting the patterns formed on the photomask, on a predetermined surface via the projection lens and the immersion exposure liquid, acquiring dimensional information on dimension acquiring patterns based on the patterns projected on the predetermined surface, adjusting a refractive index of the immersion exposure liquid on the basis of the dimensional information, and projecting patterns formed on the photomask, on a substrate via the projection lens and the immersion exposure liquid with the refractive index adjusted.
摘要翻译：一种使用浸渍曝光制造半导体器件的方法，其中浸渍曝光液体介于投影透镜和基片之间进行曝光，包括制备其上形成有多个图案的光掩模，突出形成在光掩模上的图案经由投影透镜和浸渍曝光液体在预定表面上，基于投影在预定表面上的图案获取关于尺寸获取图案的尺寸信息，基于尺寸信息调整浸没曝光液体的折射率，以及通过投影透镜和折射率调节的浸渍曝光液体在光掩模上形成在基板上的投射图案。

33. 发明申请

US20070010028A1 Chemical solution qualification method, semiconductor device fabrication method, and liquid crystal display manufacturing method 审中-公开
标题翻译：化学溶液鉴定方法，半导体器件制造方法和液晶显示器制造方法
公开(公告)号：US20070010028A1
公开(公告)日：2007-01-11
申请号：US11475125
申请日：2006-06-27
申请人： Takehiro Kondoh , Hisako Aoyama , Eishi Shiobara , Shinichi Ito
发明人： Takehiro Kondoh , Hisako Aoyama , Eishi Shiobara , Shinichi Ito
IPC分类号： G01N21/00
CPC分类号： G01N15/14 , G01N2015/1493
摘要： A method for qualifying a chemical solution is disclosed. This method (a) obtains the number of particles in a chemical solution for each size of the particles, and (b) predicts, for each size of the particles, the influence of the chemical solution on a device to be fabricated by using the chemical solution. The degree of influence of the chemical solution on the device is obtained by using the results of (a) and (b). The quality of the chemical solution is evaluated on the basis of the obtained result, and whether the chemical solution is good or bad is determined on the basis of the evaluation result. On the basis of the determination result, the chemical solution is qualified as a chemical solution for use in a fabrication step of the device.
摘要翻译：公开了一种用于限定化学溶液的方法。该方法（a）获得每种颗粒尺寸的化学溶液中的颗粒数，（b）对于每种尺寸的颗粒，预测化学溶液对通过使用化学品制造的装置的影响解。通过使用（a）和（b）的结果获得化学溶液对器件的影响程度。基于获得的结果评价化学溶液的质量，根据评价结果确定化学溶液的好坏。在确定结果的基础上，化学溶液被认定为用于装置的制造步骤中的化学溶液。

34. 发明申请

US20050130068A1 Pattern forming method and method for manufacturing a semiconductor device 失效
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US20050130068A1
公开(公告)日：2005-06-16
申请号：US10992349
申请日：2004-11-19
申请人： Takehiro Kondoh , Eishi Shiobara , Tomoyuki Takeishi , Kenji Chiba , Shinichi Ito
发明人： Takehiro Kondoh , Eishi Shiobara , Tomoyuki Takeishi , Kenji Chiba , Shinichi Ito
IPC分类号： G03F7/40 , G03F7/00 , G03F7/20 , H01L21/00 , H01L21/027
CPC分类号： G03F7/40 , G03F7/405
摘要： A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.
摘要翻译：图案形成方法包括在基板上形成第一抗蚀剂图案，在第一抗蚀剂图案上照射光，在基板上形成包含交联材料的抗蚀剂膜和第一抗蚀剂图案，形成第二抗蚀剂图案，通过在界面处引起交联反应而在第一抗蚀剂图案和抗蚀剂膜之间的界面处形成的连接层，并且对第一抗蚀剂图案照射光，包括设定照射在第一抗蚀剂图案上的光量，使得基于与第一抗蚀剂图案有关的尺寸与第二抗蚀剂图案的尺寸之间的差异以及照射在第一抗蚀剂层上的光量，第二抗蚀剂图案的尺寸为预定尺寸模式。

35. 发明申请

US20050118535A1 Method of processing a substrate, heating apparatus, and method of forming a pattern 失效
标题翻译：加工基板的方法，加热装置以及形成图案的方法
公开(公告)号：US20050118535A1
公开(公告)日：2005-06-02
申请号：US11029375
申请日：2005-01-06
申请人： Kenji Kawano , Shinichi Ito , Eishi Shiobara
发明人： Kenji Kawano , Shinichi Ito , Eishi Shiobara
IPC分类号： G03F7/38 , G03F7/004 , G03F7/40 , H01L21/00 , H01L21/027 , H01L21/469
CPC分类号： H01L21/67115 , G03F7/0042 , G03F7/0392 , G03F7/38 , H01L21/0273 , H01L21/67109
摘要： A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.
摘要翻译：一种处理衬底的方法，包括在衬底上形成化学放大抗蚀剂膜，将能量束照射到化学放大抗蚀剂膜上以在其中形成潜像，对化学放大抗蚀剂膜进行热处理，加热处理为以相对移动用于加热化学放大抗蚀剂膜的加热部分和形成在加热部分的下表面和化学放大抗蚀剂膜之间形成与加热部分的相对移动方向相反的方向流动的气流的加热部分的方式进行。

36. 发明授权

US06569595B1 Method of forming a pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US06569595B1
公开(公告)日：2003-05-27
申请号：US09512286
申请日：2000-02-24
申请人： Yasuhiko Sato , Eishi Shiobara , Yasunobu Onishi , Shuji Hayase , Yoshihiko Nakano
发明人： Yasuhiko Sato , Eishi Shiobara , Yasunobu Onishi , Shuji Hayase , Yoshihiko Nakano
IPC分类号： G03F700
CPC分类号： G03F7/091
摘要： A method of forming a pattern which comprises the steps of, forming a matrix pattern on a work film, filling an opened space in the matrix pattern with a mask material layer containing at least one kind of a network carbon polymer having a repeating unit represented by the following general formulas (CP1) to (CP4) on the work film, forming a mask material pattern by removing the matrix pattern, and forming a work film pattern by transferring the mask material pattern to the work film: wherein R is halogen atom, hydrogen atom or a substituted or unsubstituted hydrocarbon group, A is a polyvalent organic group, and m, n and k denote respectively a positive integer.
摘要翻译：一种形成图案的方法，包括以下步骤：在工作膜上形成矩阵图案，用掩模材料层填充矩阵图案中的开放空间，掩模材料层含有至少一种具有由在工作薄膜上的以下通式（CP1）〜（CP4），通过去除矩阵图案形成掩模材料图案，并通过将掩模材料图案转印到工作薄膜上形成工作薄膜图案：其中R是卤素原子，氢原子或取代或未取代的烃基，A为多价有机基团，m，n和k分别表示正整数。

37. 发明授权

US08747682B2 Pattern formation method and method for manufacturing semiconductor device 失效
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US08747682B2
公开(公告)日：2014-06-10
申请号：US12849599
申请日：2010-08-03
申请人： Kentaro Matsunaga , Tomoya Oori , Eishi Shiobara , Yukiko Sato , Yoshihisa Kawamura
发明人： Kentaro Matsunaga , Tomoya Oori , Eishi Shiobara , Yukiko Sato , Yoshihisa Kawamura
IPC分类号： C03C15/00 , C03C25/68 , C23F1/00 , H01B13/00 , B44C1/22
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149
摘要： According to one embodiment, a pattern formation method is disclosed. The method includes forming a plurality of regions on a foundation and the plurality of the regions correspond to different pattern sizes. The method includes separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions. The method includes performing a phase separation of the each of the block copolymers of each of the regions. The method includes selectively removing a designated phase of each of the phase-separated block copolymers to form a pattern of the each of the block copolymers and the pattern has a different pattern size for the each of the regions.
摘要翻译：根据一个实施例，公开了图案形成方法。该方法包括在基础上形成多个区域，并且多个区域对应于不同的图案尺寸。该方法包括从多个嵌段共聚物中的另一个嵌段共聚物中分离多个嵌段共聚物，并将多个嵌段共聚物中的每一个分离成相应的一个区域。该方法包括进行每个区域的每个嵌段共聚物的相分离。该方法包括选择性地除去每个相分离的嵌段共聚物的指定相以形成每个嵌段共聚物的图案，并且该图案对于每个区域具有不同的图案尺寸。

38. 发明授权

US08080429B2 Evaluation method for chemical solution, qualification method for chemical solution and method for manufacturing semiconductor device 有权
标题翻译：化学溶液的评价方法，化学溶液的鉴定方法以及半导体装置的制造方法
公开(公告)号：US08080429B2
公开(公告)日：2011-12-20
申请号：US12702549
申请日：2010-02-09
申请人： Shinichi Ito , Eishi Shiobara
发明人： Shinichi Ito , Eishi Shiobara
IPC分类号： G01N33/00
CPC分类号： G01N15/02 , G01N2015/0053 , Y10T436/25 , Y10T436/2575
摘要： A method for evaluating chemical solution includes determining number of particles in liquid for each size of the particles by measurement, expressing a relationship between size of the particles and number of particles corresponding to the size by a function based on the number of particles for each size of the particles determined by the measurement, and evaluating influence of particles having size less than or equal to a measurement limit in the liquid based on the function.
摘要翻译：用于评估化学溶液的方法包括通过测量确定每种尺寸的颗粒的液体中的颗粒数量，通过基于每种尺寸的颗粒数量来表示颗粒尺寸与颗粒尺寸之间的关系与基于颗粒数的函数关系通过测量确定的颗粒，并且基于该功能评估液体中尺寸小于或等于测量极限的颗粒的影响。

39. 发明申请

US20110059406A1 PATTERN FORMING METHOD 有权
标题翻译：图案形成方法
公开(公告)号：US20110059406A1
公开(公告)日：2011-03-10
申请号：US12878828
申请日：2010-09-09
申请人： Yoshihisa KAWAMURA , Eishi Shiobara , Shinichi Ito
发明人： Yoshihisa KAWAMURA , Eishi Shiobara , Shinichi Ito
IPC分类号： G03F7/20
CPC分类号： G03F7/0002
摘要： According to one embodiment, a pattern forming method is disclosed. The method can include selectively providing a curing agent to a pattern in a template, contacting the template provided the curing agent to a substrate, irradiating the curing agent with light where the template and the substrate are contacted each other to harden the curing agent, demolding the template from the substrate to form a curing agent pattern on the substrate, and etching the substrate on a basis of the curing agent pattern.
摘要翻译：根据一个实施例，公开了一种图案形成方法。该方法可以包括选择性地向模板中的图案提供固化剂，使提供固化剂的模板与基底接触，用光照射固化剂，其中模板和基底彼此接触以硬化固化剂，脱模所述模板从所述基板在所述基板上形成固化剂图案，并且基于所述固化剂图案来蚀刻所述基板。

40. 发明申请

US20090117498A1 PATTERN FORMING METHOD 失效
标题翻译：图案形成方法
公开(公告)号：US20090117498A1
公开(公告)日：2009-05-07
申请号：US12257221
申请日：2008-10-23
申请人： Eishi Shiobara , Takehiro Kondoh
发明人： Eishi Shiobara , Takehiro Kondoh
IPC分类号： G03F7/20
CPC分类号： G03F7/40
摘要： A pattern forming method according to an embodiment of the present invention includes forming a resist layer on a semiconductor substrate, selectively exposing the resist layer, developing the selectively exposed resist layer, decomposing photosensitizer in the resist layer after developing the resist layer, removing the photosensitizer or acid generated from the decomposed photosensitizer, applying a shrink material on the developed resist layer after removing the photosensitizer or the acid generated from the decomposed photosensitizer, performing a heating process for the resist layer on which the shrink material is applied, and removing a part of the heat-processed shrink material.
摘要翻译：根据本发明的实施例的图案形成方法包括在半导体衬底上形成抗蚀剂层，选择性地暴露抗蚀剂层，显影选择性曝光的抗蚀剂层，在形成抗蚀剂层之后分解抗蚀剂层中的光敏剂，除去光敏剂或由分解的光敏剂产生的酸，在除去光敏剂或从分解的光敏剂产生的酸之后，在显影的抗蚀剂层上施加收缩材料，对其上施加收缩材料的抗蚀剂层进行加热处理，的热处理收缩材料。

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