专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20130022922A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN 有权
标题翻译：耐蚀组合物及其制造方法
公开(公告)号：US20130022922A1
公开(公告)日：2013-01-24
申请号：US13552273
申请日：2012-07-18
申请人： Koji ICHIKAWA , Yuichi MUKAI , Satoshi YAMAMOTO
发明人： Koji ICHIKAWA , Yuichi MUKAI , Satoshi YAMAMOTO
IPC分类号： G03F7/027 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator represented by the formula (II), wherein R1, A1, A13, A14, X12, R23, R24, R25, X21 and Z1+ are defined in the specification.
摘要翻译：一种抗蚀剂组合物，其具有由式（I）表示的结构单元的树脂，树脂在碱性水溶液中不溶或难溶，但通过酸而不溶于碱性水溶液，不包括结构单元由式（I）表示的酸衍生物和由式（II）表示的酸产生剂，其中R1，A1，A13，A14，X12，R23，R24，R25，X21和Z1 +在说明书中定义。

32. 发明申请

US20120295066A1 SURFACE NANOSTRUCTURE FORMING METHOD AND BASE HAVING SURFACE NANOSTRUCTURE 审中-公开
标题翻译：表面纳米结构形成方法和具有表面纳米结构的基底
公开(公告)号：US20120295066A1
公开(公告)日：2012-11-22
申请号：US13566679
申请日：2012-08-03
申请人： Osamu NUKAGA , Satoshi YAMAMOTO , Seiji SAMUKAWA , Masakazu SUGIYAMA
发明人： Osamu NUKAGA , Satoshi YAMAMOTO , Seiji SAMUKAWA , Masakazu SUGIYAMA
IPC分类号： B29C59/16 , B32B3/30 , B82Y40/00 , B82Y30/00
CPC分类号： C03C23/0025 , B23K26/0624 , B23K26/361 , Y10T428/24479
摘要： A surface nanostructure forming method includes: preparing a substrate having an appropriate processing value; a first process of irradiating a part which is close to a surface of the substrate with laser light having a pulse duration of picosecond order or shorter at an irradiation intensity being close to the appropriate processing value of the substrate, or greater than or equal to the appropriate processing value and less than or equal to an ablation threshold and forming periodic nanostructures in which first modified portions and second modified portions are periodically arranged in a self-assembled manner at a focus at which the laser light is concentrated and in a region being close to the focus; and a second process of performing an etching treatment on the surface of the substrate having the periodic nanostructures formed thereon to form an uneven structure having the first modified portions as valleys.
摘要翻译：表面纳米结构形成方法包括：制备具有适当处理值的基材; 或者在接近基板的适当处理值的照射强度下用脉冲持续时间为皮秒级或更短的激光照射靠近基板的表面的部分的第一工序，或大于或等于适当的处理值并小于或等于烧蚀阈值并形成周期性纳米结构，其中第一改性部分和第二修饰部分以激光聚焦的焦点周期性地以自组装的方式布置，并且在紧密的区域中重点; 以及对其上形成有周期性纳米结构的基板的表面进行蚀刻处理以形成具有第一改性部分作为凹谷的凹凸结构的第二工艺。

33. 发明申请

US20120100482A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN 有权
标题翻译：耐蚀组合物及其制造方法
公开(公告)号：US20120100482A1
公开(公告)日：2012-04-26
申请号：US13280969
申请日：2011-10-25
申请人： Tatsuro MASUYAMA , Satoshi YAMAMOTO , Koji ICHIKAWA
发明人： Tatsuro MASUYAMA , Satoshi YAMAMOTO , Koji ICHIKAWA
IPC分类号： G03F7/20 , G03F7/027 , G03F7/004
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： A resist composition contains a resin having a structural unit represented by the formula (aa) and a structural unit represented by the formula (ab); and an acid generator, wherein Raa1 represents a hydrogen atom and a methyl group; Aaa1 represents an optionally substituted C1 to C6 alkanediyl group etc.; Raa2 represents an optionally substituted C1 to C18 aliphatic hydrocarbon group; Rab1 represents a hydrogen atom and a methyl group; Aab1 represents a single bond, an optionally substituted C1 to C6 alkanediyl group etc.; W1 represents an optionally substituted C4 to C36 alicyclic hydrocarbon group; n represents 1 or 2; Aab2 in each occurrence independently represents an optionally substituted C1 to C6 aliphatic hydrocarbon group; Rab2 in each occurrence independently represents a C1 to C12 fluorinated alkyl group.
摘要翻译：抗蚀剂组合物含有具有由式（aa）表示的结构单元的树脂和由式（ab）表示的结构单元; 和酸产生剂，其中Raa1表示氢原子和甲基; Aaa1表示可以具有取代基的C1〜C6烷二基等。 Raa2表示任选取代的C1至C18脂族烃基; Rab1表示氢原子和甲基; Aab1表示单键，任选取代的C 1至C 6烷二基等; W1表示任选取代的C4至C36脂环族烃基; n表示1或2; Aab2各自独立地表示任选取代的C 1至C 6脂族烃基; Rab2各自独立地表示C1〜C12氟化烷基。

34. 发明申请

US20110303993A1 SEMICONDUCTOR SENSOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR SENSOR DEVICE, PACKAGE, METHOD OF MANUFACTURING PACKAGE, MODULE, METHOD OF MANUFACTURING MODULE, AND ELECTRONIC DEVICE 审中-公开
标题翻译：半导体传感器装置，制造半导体传感器装置的方法，封装，制造方法，模块，制造模块的方法和电子装置
公开(公告)号：US20110303993A1
公开(公告)日：2011-12-15
申请号：US13213505
申请日：2011-08-19
申请人： Satoshi YAMAMOTO
发明人： Satoshi YAMAMOTO
IPC分类号： H01L29/84 , H01L21/50
CPC分类号： G01L1/18 , G01P1/023 , H01L23/057 , H01L23/525 , H01L24/02 , H01L24/16 , H01L2224/0236 , H01L2224/02375 , H01L2224/02379 , H01L2224/0239 , H01L2224/0401 , H01L2224/13022 , H01L2224/131 , H01L2224/13111 , H01L2224/13562 , H01L2224/14131 , H01L2224/14135 , H01L2224/73207 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01076 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： A semiconductor sensor device is provided which is composed of: a semiconductor sensor chip that includes a first substrate, a sensor circuit formed on the first substrate, a first conductive portion electrically connected to the sensor circuit, and a first redistribution layer electrically connected to the first conductive portion; a semiconductor chip that includes a second substrate, a processing circuit, formed on the second substrate, that processes an electrical signal output from the sensor circuit, a second conductive portion electrically connected to the processing circuit, and a second redistribution layer electrically connected to the second conductive portion; and a conductive connection component that electrically connects the first redistribution layer and the second redistribution layer, wherein at least one of the thickness of the first redistribution layer and the thickness of the second redistribution layer is 8 to 20 μm.
摘要翻译：提供了一种半导体传感器装置，它包括：半导体传感器芯片，包括第一基板，形成在第一基板上的传感器电路，与传感器电路电连接的第一导电部分，以及与第一基板电连接的第一再分配层第一导电部分; 包括第二基板的半导体芯片，形成在第二基板上的处理电路，处理从传感器电路输出的电信号，电连接到处理电路的第二导电部分和与该处理电路电连接的第二再分布层第二导电部分; 以及导电连接部件，其电连接所述第一再分布层和所述第二再分布层，其中所述第一再分布层的厚度和所述第二再分布层的厚度中的至少一个为8〜20μm。

35. 发明申请

US20110143111A1 Insert molding method and insert molded product 失效
标题翻译：嵌入成型法和嵌入成型品
公开(公告)号：US20110143111A1
公开(公告)日：2011-06-16
申请号：US12926639
申请日：2010-12-01
申请人： Satoshi YAMAMOTO , Akihiro TANBA , Masafumi KAGA
发明人： Satoshi YAMAMOTO , Akihiro TANBA , Masafumi KAGA
IPC分类号： B32B27/34 , B29C45/14 , B32B27/38
CPC分类号： B29C33/12 , B29C45/14065 , B29C45/14467 , B32B27/34 , B32B27/38 , Y10T428/2495 , Y10T428/31511 , Y10T428/31725
摘要： An insert molding method includes holding a plurality of insert members in a molding die to be separated from one another, and subsequently filling a resin into the molding die to fill a gap between the insert members and a periphery thereof with the resin to form an insert molded product such that the insert members are separated at a preset interval from one another. The molding die includes a space-maintaining projection for maintaining a separation interval between the insert members at the preset interval or more, the projection being formed on an inner wall surface of the molding die opposite to a longitudinal end of the insert members, and a gate for filling the resin therethrough into the molding die, the gate being formed on an inner wall surface of the molding die opposite to a side of the insert members in a width direction thereof.
摘要翻译：插入成型方法包括将多个插入构件保持在成型模具中以彼此分离，并且随后将树脂填充到模具中以填充插入构件与其周边之间的间隙与树脂以形成插入件模制产品，使得插入件彼此间隔预定间隔分开。成型模具包括用于以预定间隔或更大间隔保持插入构件之间的间隔的空间保持突起，该突起形成在与插入构件的纵向端部相对的成型模具的内壁表面上，并且用于将树脂填充到成型模具中的浇口，所述浇口形成在成型模具的内壁表面上，与所述插入件的宽度方向的一侧相对。

36. 发明申请

US20110129999A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20110129999A1
公开(公告)日：2011-06-02
申请号：US13020534
申请日：2011-02-03
申请人： Osamu NUKAGA , Satoshi YAMAMOTO
发明人： Osamu NUKAGA , Satoshi YAMAMOTO
IPC分类号： H01L21/441
CPC分类号： H01L21/76898 , H01L21/76831
摘要： Provided is a method for manufacturing a semiconductor device including: an electrode formation step of forming an electrode on one surface of a semiconductor substrate; a through hole formation step of forming a through hole starting from a position on the other surface corresponding to the position of the electrode; a first insulating layer formation step of forming a first insulating layer on at least an inner circumferential surface, a periphery of an opening, and a bottom surface of the through hole; a modifying step of reforming a first portion of the first insulating layer formed on the bottom surface of the through hole; a modified region removal step of removing the modified region; and a conductive layer formation step of forming a conductive layer on the electrode exposed inside the through hole and on the first insulating layer such that the conductive layer is electrically connected with the electrode.
摘要翻译：提供一种半导体器件的制造方法，包括：电极形成步骤，在半导体衬底的一个表面上形成电极; 通孔形成步骤，从对应于电极位置的另一表面的位置开始形成通孔; 第一绝缘层形成步骤，在至少内周面，开口周边和通孔的底面上形成第一绝缘层; 改性步骤，对形成在通孔底面上的第一绝缘层的第一部分进行重整; 修改区域去除步骤，去除修饰区域; 以及导电层形成步骤，在暴露在通孔内部的电极和第一绝缘层上形成导电层，使得导电层与电极电连接。

37. 发明申请

US20100063678A1 MOTION CONTROL SENSOR SYSTEM FOR A MOVING UNIT AND MOTION CONTROL SYSTEM 审中-公开
标题翻译：用于移动单元和运动控制系统的运动控制传感器系统
公开(公告)号：US20100063678A1
公开(公告)日：2010-03-11
申请号：US12503532
申请日：2009-07-15
申请人： Satoshi YAMAMOTO
发明人： Satoshi YAMAMOTO
IPC分类号： B60G17/0165
CPC分类号： B60T8/171 , B60G3/06 , B60G15/07 , B60G2200/142 , B60G2204/112 , B60G2204/113 , B60G2204/115 , B60G2204/202 , B60G2400/0523 , B60G2400/1042 , B60G2400/208 , B60G2401/902 , B60T2260/06
摘要： A motion control sensor system and motion control system for a moving unit have a physical quantity sensor in an unsprung mass of the moving unit so that physical quantities in the unsprung mass can be detected, bypassing the spring. An acceleration sensor for detecting acceleration exerted on the unsprung mass of the moving unit is placed so that its detection axis crosses the operation axis of the moving unit, so acceleration due to angular acceleration around the operation axis is not detected. Accordingly, the motion control sensor system and motion control system are suitable for running stability control during cornering of the moving unit.
摘要翻译：用于移动单元的运动控制传感器系统和运动控制系统具有在移动单元的非簧载质量中的物理量传感器，使得绕过弹簧可以检测非簧载质量中的物理量。放置用于检测施加在移动单元的非簧载质量上的加速度的加速度传感器，使得其检测轴与移动单元的操作轴交叉，因此不检测由于围绕操作轴的角加速度的加速度。因此，运动控制传感器系统和运动控制系统适用于在移动单元转弯期间运行稳定性控制。

38. 发明申请

US20100062365A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION 有权
标题翻译：化学放大正电阻组合物
公开(公告)号：US20100062365A1
公开(公告)日：2010-03-11
申请号：US12536386
申请日：2009-08-05
申请人： Masahiko SHIMADA , Kazuhiko HASHIMOTO , Junji SHIGEMATSU , Takayuki MIYAGAWA , Satoshi YAMAMOTO
发明人： Masahiko SHIMADA , Kazuhiko HASHIMOTO , Junji SHIGEMATSU , Takayuki MIYAGAWA , Satoshi YAMAMOTO
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/0395 , Y10S430/108 , Y10S430/111
摘要： The present invention provides a chemically amplified positive composition comprising:(A) a resin comprising a structural unit having an acid-labile group and being itself insoluble or poorly soluble in an alkali aqueous solution but becoming soluble in an alkali aqueous solution by the action of an acid,(B) a resin comprising a structural unit represented by the formula (I): wherein R1 represents a hydrogen atom, a halogen atom, a C1-C4 alkyl group or a C1-C4 perfluoroalkyl group, Z represents a single bond or —(CH2)k—CO—X4—, k represents an integer of 1 to 4, X1, X2, X3 and X4 each independently represents an oxygen atom or a sulfur atom, m represents an integer of 1 to 3 and n represents an integer of 0 to 3, and a structural unit having a fluorine atom in a side chain, andan acid generator.
摘要翻译：本发明提供一种化学放大阳性组合物，其包含：（A）包含具有酸不稳定基团的结构单元的树脂，其本身不溶于或难溶于碱性水溶液，但通过作用于酸，（B）包含由式（I）表示的结构单元的树脂：其中R1表示氢原子，卤素原子，C1-C4烷基或C1-C4全氟烷基，Z表示单键或 - （CH 2）k -CO-X 4 - ，k表示1〜4的整数，X 1，X 2，X 3，X 4各自独立地表示氧原子或硫原子，m表示1〜3的整数，n表示 0〜3的整数，侧链具有氟原子的结构单元和酸发生剂。

39. 发明申请

US20090273037A1 Semiconductor Integrated Circuit Device and Manufacturing Method Thereof 有权
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US20090273037A1
公开(公告)日：2009-11-05
申请号：US12486944
申请日：2009-06-18
申请人： Satoshi SAKAI , Atsushi HIRAIWA , Satoshi YAMAMOTO
发明人： Satoshi SAKAI , Atsushi HIRAIWA , Satoshi YAMAMOTO
IPC分类号： H01L27/088
CPC分类号： H01L21/823462 , H01L21/82345 , H01L21/823842 , H01L21/823857 , H01L21/823878
摘要： After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).
摘要翻译：在半导体基板（1）的表面上形成氧化硅膜（9）之后，使用稀释的HF除去形成有效厚度小的栅极绝缘膜的区域中的氧化硅膜（9）在半导体衬底（1）上形成高介电常数绝缘膜（10）。因此，由高介电常数绝缘膜（10）和氧化硅膜（9）构成的栅极绝缘膜（12）和栅极绝缘膜（12）构成的两种栅极绝缘膜由高介电常数在半导体衬底（1）上形成恒定绝缘膜（10）。

40. 发明申请

US20080118839A1 NON-AQUEOUS ELECTROLYTE SECONDARY CELL 有权
标题翻译：非水溶性电解质二次电池
公开(公告)号：US20080118839A1
公开(公告)日：2008-05-22
申请号：US11941252
申请日：2007-11-16
申请人： Satoshi YAMAMOTO , Nobumichi NISHIDA
发明人： Satoshi YAMAMOTO , Nobumichi NISHIDA
IPC分类号： H01M4/52
CPC分类号： H01M4/5825 , H01M4/131 , H01M4/364 , H01M4/525 , H01M4/628 , H01M10/4235 , H01M2004/027
摘要： The present invention aims to provide a non-aqueous electrolyte secondary cell having high capacity and capable of preventing elution of cobalt and decomposition of the electrolyte. This aim can be accomplished by providing a non-aqueous electrolyte secondary cell comprising a positive electrode having a positive electrode active material, an negative electrode having an negative electrode active material, and non-aqueous electrolyte, wherein the positive electrode active material comprises lithium cobalt oxide to which at least one material selected from the group consisting of Mg, Al, Ti, and Zr was added, and the positive electrode comprises lithium phosphate.
摘要翻译：本发明旨在提供一种具有高容量且能够防止钴的析出和电解质分解的非水电解质二次电池。该目的可以通过提供一种非水电解质二次电池，其包括具有正极活性物质的正极，具有负极活性物质的负极和非水电解质，其中，所述正极活性物质包含锂钴氧化物，其中添加了选自Mg，Al，Ti和Zr中的至少一种材料，并且正极包含磷酸锂。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式