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31. 发明申请

US20080001207A1 Planar flux concentrator for MRAM devices 有权
公开(公告)号：US20080001207A1
公开(公告)日：2008-01-03
申请号：US11476495
申请日：2006-06-28
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： H01L29/788
CPC分类号： H01L43/12 , G11C11/15 , H01L27/222
摘要： The present invention provides an MRAM that includes a conductive line for generating a magnetic field. The latter is enhanced by the addition of a flux concentrator made from a single plane of soft ferromagnetic material, magnetically stabilized by means of an antiferromagnetic layer. This structure, in addition to being very easy to fabricate, facilitates close control over its magnetic properties, including uniformity and domain structure.

32. 发明申请

US20070012952A1 Segmented magnetic shielding elements 失效
标题翻译：分段磁屏蔽元件
公开(公告)号：US20070012952A1
公开(公告)日：2007-01-18
申请号：US11182255
申请日：2005-07-15
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： H01L43/00 , H01L21/00
CPC分类号： H01L27/222 , G11C11/1675 , G11C11/1695
摘要： A second shield layer, under the master shielding layer, is added to a segmented MRAM array. This additional shielding is patterned so as to provide one shield per bit slice. The placement of longitudinal biasing tabs at the ends of these segmented shields ensures that each segmented shield is a single magnetic domain, making it highly effective as a shield against very small stray fields.
摘要翻译：在主屏蔽层下方的第二屏蔽层被添加到分段的MRAM阵列。图案化附加屏蔽，以便每位片提供一个屏蔽。在这些分段屏蔽的端部处放置纵向偏置突片确保每个分段屏蔽是单个磁畴，使其作为防止非常小的杂散场的屏蔽非常有效。

33. 发明授权

US07123506B2 Method and system for performing more consistent switching of magnetic elements in a magnetic memory 失效
标题翻译：用于对磁存储器中的磁性元件进行更一致的切换的方法和系统
公开(公告)号：US07123506B2
公开(公告)日：2006-10-17
申请号：US10860902
申请日：2004-06-03
申请人： Xizeng Shi , Son Le , Po-Kang Wang , Tai Min
发明人： Xizeng Shi , Son Le , Po-Kang Wang , Tai Min
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for programming a magnetic memory is disclosed. The method and system further include turning on a word line current and turning on a bit line current. The word line current is for generating at least one hard axis field. The bit line current is for generating at least one easy axis field. In one aspect, the method and system further include turning off the word line current and the bit line current such that a state of the at least one magnetic memory cell is repeatably obtained. In another aspect, the word line current is turned off after the bit line current is turned off.
摘要翻译：公开了一种用于编程磁存储器的方法和系统。该方法和系统还包括打开字线电流并打开位线电流。字线电流用于产生至少一个硬轴字段。位线电流用于产生至少一个易轴场。在一个方面，所述方法和系统还包括关闭字线电流和位线电流，使得可重复地获得至少一个磁存储单元的状态。另一方面，在位线电流关闭之后，字线电流被关断。

34. 发明申请

US20060227461A1 Method and apparatus for providing an additional ground pad and electrical connection for grounding a magnetic recording head 有权
公开(公告)号：US20060227461A1
公开(公告)日：2006-10-12
申请号：US11447174
申请日：2006-06-06
申请人： Yen Fu , Ellis Cha , Po-Kang Wang , Hong Tian , Manuel Hernandez , Yaw-Shing Tang , Ben Hu
发明人： Yen Fu , Ellis Cha , Po-Kang Wang , Hong Tian , Manuel Hernandez , Yaw-Shing Tang , Ben Hu
IPC分类号： G11B5/60
CPC分类号： H05K3/3442 , B24B37/00 , B24D18/00 , G11B5/4853 , H05K1/0215 , H05K2201/10727 , Y02P70/613
摘要： Method and apparatus are presented for electrically coupling a slider to ground. In one embodiment, a bonding pad is provided on a side of the slider body separate from the bonding pad(s) used for read/write signals. This separate bonding pad is electrically coupled within the slider body to components that are to be coupled to ground. A separate conductor provided on the suspension (e.g., a trace, a flex circuit, etc.) may be electrically coupled to the separate bonding pad via gold ball bonding. The conductor is also coupled to ground in the hard-disk drive device (e.g., via the preamplifier). The use of the separated bonding pad and trace may negate the need to use a conductive adhesive to electrically ground the slider via its attachment to the tongue of a slider.

35. 发明申请

US20060012388A1 System and method for testing wireless devices 失效
标题翻译：用于测试无线设备的系统和方法
公开(公告)号：US20060012388A1
公开(公告)日：2006-01-19
申请号：US11176365
申请日：2005-07-08
申请人： Ching-Lang Lin , Po-Kang Wang , I-Ru Liu
发明人： Ching-Lang Lin , Po-Kang Wang , I-Ru Liu
IPC分类号： G01R31/302 , G01M19/00 , H04Q5/22
CPC分类号： H04W24/00
摘要： The present invention disclose a system and method for testing wireless devices, by which two wireless device-under-test (DUTs) is enabled to transmit and receive signal from each other such that the two DUTs can be test simultaneously for achieving the objects of reducing time consumed for testing a batch of DUTs and also reducing the amount of procedures required for cabling the DUTs to the test equipments of the test system.
摘要翻译：本发明公开了一种用于测试无线设备的系统和方法，通过该系统和方法，两个无线测试设备（DUT）能够彼此发送和接收信号，使得两个DUT可以同时测试以实现减少的目的测试一批DUT的时间消耗，同时也减少了将DUT布线到测试系统的测试设备所需的程序数量。

36. 发明申请

US20050276098A1 Method and system for providing common read and write word lines for a segmented word line MRAM array 失效
标题翻译：用于为分段字线MRAM阵列提供通用读写字线的方法和系统
公开(公告)号：US20050276098A1
公开(公告)日：2005-12-15
申请号：US10865722
申请日：2004-06-09
申请人： Hsu Yang , Xizeng Shi , Po-Kang Wang , Bruce Yang
发明人： Hsu Yang , Xizeng Shi , Po-Kang Wang , Bruce Yang
IPC分类号： B01F15/02 , G11C11/00 , G11C11/16
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory including magnetic memory cells associated with a word line segment is disclosed. The magnetic memory cell includes a magnetic storage device and an isolation device. The isolation device is coupled to the magnetic tunneling junction and with a combined word line for reading and writing to the magnetic memory cell. The magnetic storage device and the isolation device are configured such that no direct current path to ground exists during the writing to the magnetic memory cell. In one aspect, in a write mode, the combined word line associated with the word line segment and the word line segment are activated. In the read mode, at least a portion of the memory cells associated with the word line segment are selected using the combined word line.
摘要翻译：公开了一种用于提供包括与字线段相关联的磁存储单元的磁存储器的方法和系统。磁存储单元包括磁存储装置和隔离装置。隔离装置耦合到磁性隧道结，并具有用于读取和写入磁性存储器单元的组合字线。磁存储装置和隔离装置被配置成使得在写入磁存储单元期间不存在直接到地面的地面路径。一方面，在写入模式中，与字线段和字线段相关联的组合字线被激活。在读取模式中，使用组合字线来选择与字线段相关联的至少一部分存储单元。

37. 发明授权

US06469875B1 Stitched write head design having a sunken shared pole 失效
标题翻译：拼接写头设计有一个凹陷的共享极点
公开(公告)号：US06469875B1
公开(公告)日：2002-10-22
申请号：US09525672
申请日：2000-03-15
申请人： Mao-Min Chen , Po-Kang Wang , Cherng-Chyi Han
发明人： Mao-Min Chen , Po-Kang Wang , Cherng-Chyi Han
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , Y10T29/49048
摘要： A structure and a method for a stitched write head having a sunken share pole. The method includes forming a bottom coil dielectric layer over the first half shared pole. Coils are formed over the bottom coil dielectric layer. Next, second half shared poles (P1) are formed over the first half shared pole (S2). We form a top coil dielectric layer over the structure. In a key step, we chemical-mechanical polish the top coil dielectric layer. A write gap layer (WG) is formed over the front second half shared pole and the top coil dielectric layer over the coils. An upper pole (P3) and hard mask are formed over the write gap layer. We etch the write gap layer and the second half shared pole (P1) using the upper pole as an etch mask to remove a portion of the second half shared pole (P1) adjacent to the write gap layer thereby forming a partially trimmed pole.
摘要翻译：一种具有凹陷的共享极的缝合写头的结构和方法。该方法包括在第一半共享极上形成底部线圈电介质层。线圈形成在底部线圈电介质层上。接下来，在第一半共享极（S2）上形成第二半共享极（P1）。我们在结构上形成顶层线圈介电层。在关键步骤中，我们化学机械抛光顶层线圈介电层。写入间隙层（WG）形成在线圈上的前第二半共享极和顶部线圈电介质层上。在写间隙层上形成上极（P3）和硬掩模。我们使用上极蚀刻写间隙层和第二半共享极（P1）作为蚀刻掩模，以去除与写间隙层相邻的第二半共享极（P1）的一部分，从而形成部分修整的极。

38. 发明授权

US06383574B1 Ion implantation method for fabricating magnetoresistive (MR) sensor element 失效
标题翻译：用于制造磁阻（MR）传感器元件的离子注入方法
公开(公告)号：US06383574B1
公开(公告)日：2002-05-07
申请号：US09360118
申请日：1999-07-23
申请人： Cherng-Chyi Han , Rong-Fu Xiao , Mao-Min Chen , Po-Kang Wang
发明人： Cherng-Chyi Han , Rong-Fu Xiao , Mao-Min Chen , Po-Kang Wang
IPC分类号： B05D500
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/48 , G11B5/3163 , H01F41/302
摘要： A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.
摘要翻译：形成磁阻（MR）层的方法首先采用形成由磁阻（MR）材料形成的磁阻（MR）层的衬底。然后选择性地离子注入，同时采用离子注入法，磁阻（MR）层形成：（1）由离子注入的磁阻（MR）材料形成的磁阻（MR）层的离子注入部分; 和（2）由磁阻（MR）材料形成的磁阻（MR）层的邻接非离子注入部分，其中离子注入磁阻（MR）材料是非磁阻（MR）材料。该方法可以用于在具有增强的尺寸均匀性的磁阻（MR）传感器元件磁阻（MR）层内形成，特别是增强的覆盖尺寸均匀性。

39. 发明授权

US5680281A Edge-biased magnetoresistive sensor 失效
标题翻译：边缘偏置磁阻传感器
公开(公告)号：US5680281A
公开(公告)日：1997-10-21
申请号：US482898
申请日：1995-06-07
申请人： Kenneth Ting-Yuan Kung , Po-Kang Wang
发明人： Kenneth Ting-Yuan Kung , Po-Kang Wang
IPC分类号： G01R33/09 , G11B5/127 , G11B5/39 , H01F10/00 , G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/096 , G11B5/3903 , G11B5/399
摘要： A magnetoresistive (MR) sensor comprising a layer of ferromagnetic material forming an MR sensing element wherein the MR sensor is biased by utilizing only the MR stripe uniaxial anisotropy and the shape anisotropy of the active region of the sensing element. The active region of the MR element has a generally square geometry to provide the desired shape anisotropy. The MR sensor is biased at approximately 45 degrees by defining the magnetization at the four edges of the sense element active region utilizing its shape anisotropy and canting the magnetic easy axis at an appropriate angle during fabrication of the MR sensor. To minimize Barkhausen noise, a single magnetic domain configuration is achieved by reducing the sensor active region dimensions, i.e., stripe height and track width, to less than the characteristic domain wall thickness such that the formation of multiple magnetic domains is no longer energetically favorable. A magnetic biasing material such as a layer of antiferromagnetic material to provide exchange coupling, can be provided at a pair of opposing edges to maintain the magnetization at the edges in the desired orientation and to stabilize the sensor.
摘要翻译：磁阻（MR）传感器包括形成MR感测元件的铁磁材料层，其中通过仅利用感测元件的有源区域的MR条状单轴各向异性和形状各向异性来偏置MR传感器。 MR元件的有源区具有大致正方形的几何形状以提供期望的形状各向异性。通过在感测元件有源区域的四个边缘处利用其形状各向异性限定磁化强度，将MR传感器偏置在大约45度，并且在MR传感器的制造过程中将磁性容易轴倾斜到适当的角度。为了最小化巴克豪森噪声，通过将传感器有源区域尺寸（即条带高度和轨道宽度）减小到小于特征域壁厚度来实现单个磁畴构造，使得多个磁畴的形成不再在能量方面有利。可以在一对相对边缘处提供诸如反铁磁材料层的磁偏置材料，以提供交换耦合，以保持在期望取向的边缘处的磁化并使传感器稳定。

40. 发明授权

US5488528A Pole tip structure for thin film magnetic heads 失效
标题翻译：用于薄膜磁头的极尖结构
公开(公告)号：US5488528A
公开(公告)日：1996-01-30
申请号：US292630
申请日：1994-08-18
申请人： Mao-Min Chen , Kochan Ju , Neil L. Robertson , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Neil L. Robertson , Po-Kang Wang
IPC分类号： G11B5/31 , G11B5/147
CPC分类号： G11B5/3163 , G11B5/3116 , G11B5/3183
摘要： A horizontal thin film magnetic head is provided which has well aligned pole tips. The head includes first and second seedlayers, the first and second seedlayers being located below a first pole tip and only the second seedlayer being located below the second pole tip. The first pole tip may be capped with a nonmagnetic material such as copper. A very narrow sidegap is employed between the first and second pole tips.
摘要翻译：提供了具有良好对准的极尖的水平薄膜磁头。头部包括第一和第二种子层，第一和第二种子层位于第一极端部下方，并且仅第二种子层位于第二极尖端下方。第一极尖可以用诸如铜的非磁性材料加盖。在第一和第二极尖之间使用非常窄的侧隙。

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