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31. 发明授权

US07009696B2 Method and apparatus for scanning, stitching, and damping measurements of a double-sided metrology inspection tool 有权
公开(公告)号：US07009696B2
公开(公告)日：2006-03-07
申请号：US10759764
申请日：2004-01-16
申请人： Paul J. Sullivan , George Kren , Rodney C. Smedt , Hans J. Hansen , David W. Shortt , Daniel Ivanov Kavaldjiev , Christopher F. Bevis
发明人： Paul J. Sullivan , George Kren , Rodney C. Smedt , Hans J. Hansen , David W. Shortt , Daniel Ivanov Kavaldjiev , Christopher F. Bevis
IPC分类号： G01N21/84
CPC分类号： G01N21/9501 , G01R31/2656 , G01R31/2831
摘要： A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes means for stitching the scans together, thereby providing both damping of the specimen and the need for smaller and less expensive optical elements.

32. 发明授权

US06935922B2 Methods and systems for generating a two-dimensional map of a characteristic at relative or absolute locations of measurement spots on a specimen during polishing 有权
标题翻译：用于在抛光期间在样品上的测量点的相对或绝对位置产生特征的二维图的方法和系统
公开(公告)号：US06935922B2
公开(公告)日：2005-08-30
申请号：US10358106
申请日：2003-02-04
申请人： Kurt Lehman , Charles Chen , Ronald L. Allen , Robert Shinagawa , Anantha Sethuraman , Christopher F. Bevis , Thanassis Trikas , Haiguang Chen , Ching Ling Meng
发明人： Kurt Lehman , Charles Chen , Ronald L. Allen , Robert Shinagawa , Anantha Sethuraman , Christopher F. Bevis , Thanassis Trikas , Haiguang Chen , Ching Ling Meng
IPC分类号： B24B37/04 , B24B41/04 , B24B49/04 , B24B49/10 , B24B49/12 , B24D49/00
CPC分类号： B24B37/013 , B24B37/042 , B24B41/04 , B24B49/04 , B24B49/10 , B24B49/12
摘要： Methods and systems for generating a two-dimensional map of a characteristic at relative or absolute locations of measurement spots on a specimen during polishing are provided. One method includes scanning a specimen with a measurement device during polishing to generate output signals at measurement spots on the specimen. The method may also include determining a characteristic of polishing at the measurement spots from the output signals. In addition, the method may include determining relative or absolute locations of the measurement spots on the specimen. The method may further include generating a two-dimensional map of the characteristic at the relative or absolute locations of the measurement spots on the specimen. In some embodiments, the relative locations of the measurement spots may be determined from a representative scan path of the measurement device and an average spacing between starting points on individual scans.
摘要翻译：提供了用于在抛光期间在样本上的测量点的相对或绝对位置处产生特征的二维图的方法和系统。一种方法包括在抛光期间用测量装置扫描样品，以在样品上的测量点产生输出信号。该方法还可以包括从输出信号确定测量点处的抛光特性。此外，该方法可以包括确定样本上的测量点的相对或绝对位置。该方法还可以包括在样本上的测量点的相对或绝对位置处生成特征的二维图。在一些实施例中，测量点的相对位置可以从测量装置的代表性扫描路径和单个扫描上的起始点之间的平均间隔来确定。

33. 发明授权

US08933425B1 Apparatus and methods for aberration correction in electron beam based system 有权
标题翻译：基于电子束的系统中像差校正的装置和方法
公开(公告)号：US08933425B1
公开(公告)日：2015-01-13
申请号：US13287682
申请日：2011-11-02
申请人： Christopher F. Bevis
发明人： Christopher F. Bevis
IPC分类号： H01J37/317
CPC分类号： H01J37/153 , H01J37/3007 , H01J37/3174 , H01J37/3175 , H01J2237/0435 , H01J2237/1534 , H01J2237/303 , H01J2237/3175 , H01J2237/31774 , H01J2237/31788 , H01J2237/31789
摘要： One embodiment relates to an apparatus for aberration correction in an electron beam lithography system. An inner electrode surrounds a pattern generating device, and there is at least one outer electrode around the inner electrode. Each of the inner and outer electrodes has a planar surface in a plane of the pattern generating device. Circuitry is configured to apply an inner voltage level to the inner electrode and at least one outer voltage level to the at least one outer electrode. The voltage levels may be set to correct a curvature of field in the electron beam lithography system. Another embodiment relates to an apparatus for aberration correction used in an electron based system, such as an electron beam inspection, or review, or metrology system. Other embodiments, aspects and features are also disclosed.
摘要翻译：一个实施例涉及一种用于电子束光刻系统中的像差校正的装置。内部电极围绕图案生成装置，并且在内部电极周围存在至少一个外部电极。内电极和外电极中的每一个在图案生成装置的平面中具有平坦表面。电路被配置为将内部电压电平施加到所述内部电极，并且至少一个外部电压电平施加到所述至少一个外部电极。可以设置电压电平以校正电子束光刻系统中的曲率。另一实施例涉及用于电子系统中的像差校正装置，例如电子束检查或检查或计量系统。还公开了其它实施例，方面和特征。

34. 发明授权

US08692204B2 Apparatus and methods for electron beam detection 失效
标题翻译：电子束检测装置及方法
公开(公告)号：US08692204B2
公开(公告)日：2014-04-08
申请号：US13453902
申请日：2012-04-23
申请人： Shinichi Kojima , Christopher F. Bevis , Joseph Maurino , William M. Tong
发明人： Shinichi Kojima , Christopher F. Bevis , Joseph Maurino , William M. Tong
IPC分类号： G01T1/20
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/244 , H01J2237/24528 , H01J2237/30438 , H01J2237/31798
摘要： One embodiment disclosed relates a method of detecting a patterned electron beam. The patterned electron beam is focused onto a grating with a pattern that has a same pitch as the patterned electron beam. Electrons of the patterned electron beam that pass through the grating un-scattered are detected. Another embodiment relates to focusing the patterned electron beam onto a grating with a pattern that has a second pitch that is different than a first pitch of the patterned electron beam. Electrons of the patterned electron beam that pass through the grating form a Moiré pattern that is detected using a position-sensitive detector. Other embodiments, aspects and features are also disclosed.
摘要翻译：公开的一个实施例涉及一种检测图案化电子束的方法。图案化电子束被聚焦到具有与图案化电子束相同的间距的图案的光栅上。检测通过光栅不分散的图案化电子束的电子。另一个实施例涉及将图案化电子束聚焦到具有不同于图案化电子束的第一间距的第二间距的图案的光栅上。通过光栅的图案化电子束的电子形成使用位置敏感检测器检测的莫尔图案。还公开了其它实施例，方面和特征。

35. 发明授权

US08422010B2 Methods and systems for determining a characteristic of a wafer 有权
标题翻译：用于确定晶片特性的方法和系统
公开(公告)号：US08422010B2
公开(公告)日：2013-04-16
申请号：US13610860
申请日：2012-09-12
申请人： Michael D. Kirk , Christopher F. Bevis , David Adler , Kris Bhaskar
发明人： Michael D. Kirk , Christopher F. Bevis , David Adler , Kris Bhaskar
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/4738 , G01N21/55
摘要： Methods and systems for determining a characteristic of a wafer are provided. One method includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The method also includes determining the characteristic of the wafer using the second output. One system includes an inspection subsystem configured to illuminate the wafer and to generate output responsive to light from the wafer. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The system also includes a processor configured to determine the characteristic of the wafer using the second output.
摘要翻译：提供了用于确定晶片特性的方法和系统。一种方法包括使用检查系统响应来自晶片的光产生输出。输出包括对应于晶片上的缺陷的第一输出和不对应于缺陷的第二输出。该方法还包括使用第二输出确定晶片的特性。一个系统包括检查子系统，该检查子系统配置成照亮晶片并产生响应于来自晶片的光的输出。输出包括对应于晶片上的缺陷的第一输出和不对应于缺陷的第二输出。该系统还包括配置成使用第二输出来确定晶片的特性的处理器。

36. 发明申请

US20130035877A1 Methods and Systems for Determining a Characteristic of a Wafer 有权
标题翻译：确定晶圆特性的方法和系统
公开(公告)号：US20130035877A1
公开(公告)日：2013-02-07
申请号：US13610860
申请日：2012-09-12
申请人： Michael D. Kirk , Christopher F. Bevis , David Adler , Kris Bhaskar
发明人： Michael D. Kirk , Christopher F. Bevis , David Adler , Kris Bhaskar
IPC分类号： G01N21/88 , G06F19/00
CPC分类号： G01N21/9501 , G01N21/4738 , G01N21/55
摘要： Methods and systems for determining a characteristic of a wafer are provided. One method includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The method also includes determining the characteristic of the wafer using the second output. One system includes an inspection subsystem configured to illuminate the wafer and to generate output responsive to light from the wafer. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The system also includes a processor configured to determine the characteristic of the wafer using the second output.
摘要翻译：提供了用于确定晶片特性的方法和系统。一种方法包括使用检查系统响应来自晶片的光产生输出。输出包括对应于晶片上的缺陷的第一输出和不对应于缺陷的第二输出。该方法还包括使用第二输出确定晶片的特性。一个系统包括检查子系统，该检查子系统配置成照亮晶片并产生响应于来自晶片的光的输出。输出包括对应于晶片上的缺陷的第一输出和不对应于缺陷的第二输出。该系统还包括配置成使用第二输出来确定晶片的特性的处理器。

37. 发明申请

US20120281275A1 Systems and Methods for Determining One or More Characteristics of a Specimen Using Radiation in the Terahertz Range 审中-公开
标题翻译：用于确定在太赫兹范围内使用辐射的样品的一个或多个特性的系统和方法
公开(公告)号：US20120281275A1
公开(公告)日：2012-11-08
申请号：US13552642
申请日：2012-07-19
申请人： Ady Levy , Samuel Ngai , Christopher F. Bevis , Stefano Concina , John Fielden , Walter Mieher , Dieter Mueller , Neil Richardson , Dan Wack , Larry Wagner
发明人： Ady Levy , Samuel Ngai , Christopher F. Bevis , Stefano Concina , John Fielden , Walter Mieher , Dieter Mueller , Neil Richardson , Dan Wack , Larry Wagner
IPC分类号： G06K7/10 , B05C11/00 , B05C9/00 , B05C11/02 , B05C5/02 , C23C16/44
CPC分类号： G01N21/9505 , G01N21/3581 , H01L22/12
摘要： Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output.
摘要翻译：提供了使用太赫兹范围内的辐射来确定样本的一个或多个特征的系统和方法。一个系统包括被配置为用辐射照射样本的照明子系统。该系统还包括检测子系统，该检测子系统被配置为响应于样本的照射来检测从样本传播的辐射，并响应于检测到的辐射产生输出。检测到的辐射包括太赫兹范围内的辐射。另外，该系统包括配置成使用该输出来确定样本的一个或多个特性的处理器。

38. 发明申请

US20110313558A1 METHODS AND SYSTEMS FOR MONITORING A PARAMETER OF A MEASUREMENT DEVICE DURING POLISHING, DAMAGE TO A SPECIMEN DURING POLISHING, OR A CHARACTERISTIC OF A POLISHING PAD OR TOOL 有权
标题翻译：用于在抛光期间监测测量装置的参数的方法和系统，在抛光期间对样品的损害，或抛光抛光或工具的特性
公开(公告)号：US20110313558A1
公开(公告)日：2011-12-22
申请号：US13219607
申请日：2011-08-27
申请人： Kurt Lehman , Charles Chen , Ronald L. Allen , Robert Shinagawa , Anantha Sethuraman , Christopher F. Bevis , Thanassis Trikas , Haiguang Chen , Ching Ling Meng
发明人： Kurt Lehman , Charles Chen , Ronald L. Allen , Robert Shinagawa , Anantha Sethuraman , Christopher F. Bevis , Thanassis Trikas , Haiguang Chen , Ching Ling Meng
IPC分类号： G06F19/00
CPC分类号： B24B37/013 , B24B37/042 , B24B41/04 , B24B49/04 , B24B49/10 , B24B49/12
摘要： Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a polishing tool are provided. One method includes scanning a specimen with a measurement device during polishing of a specimen to generate output signals at measurement spots on the specimen. The method also includes determining if the output signals are outside of a range of output signals. Output signals outside of the range may indicate that a parameter of the measurement device is out of control limits. In a different embodiment, output signals outside of the range may indicate damage to the specimen. Another method includes scanning a polishing pad with a measurement device to generate output signals at measurement spots on the polishing pad. The method also includes determining a characteristic of the polishing pad from the output signals.
摘要翻译：提供了用于在抛光期间监测测量装置的参数的方法和系统，抛光期间对样本的损坏，抛光垫的特性或抛光工具的特性。一种方法包括在样品抛光期间用测量装置扫描样品，以在样品上的测量点产生输出信号。该方法还包括确定输出信号是否在输出信号的范围之外。超出范围的输出信号可能表示测量设备的参数失控。在不同的实施例中，在该范围之外的输出信号可以指示对样本的损伤。另一种方法包括用测量装置扫描抛光垫以在抛光垫上的测量点产生输出信号。该方法还包括从输出信号确定抛光垫的特性。

39. 发明授权

US07847937B1 Optical measurment systems and methods 有权
标题翻译：光学测量系统和方法
公开(公告)号：US07847937B1
公开(公告)日：2010-12-07
申请号：US11696612
申请日：2007-04-04
申请人： Christopher F. Bevis
发明人： Christopher F. Bevis
IPC分类号： G01J4/00
CPC分类号： G01N21/211 , G01N21/1717 , G01N21/47 , G01N2021/213
摘要： An optical measurement system includes a rotating element ellipsometer comprising a radiant source and a rotating optical element coupled to the radian source, an optical system to provide a modulated pump beam, a detection system optically coupled to the ellipsometer and a signal analyzer. The rotating element ellipsometer is configured to deliver a probe beam to a measurement spot on a sample and to measure one or more ellipsometric parameters of the sample at one or more discrete wavelengths or wavelength ranges, or a plurality of wavelengths across a wavelength range. Methods for determining sample characteristics from radiation scattered, reflected, diffracted or otherwise emitted from a sample surface using the optical measurement systems are also disclosed.
摘要翻译：光学测量系统包括旋转元件椭偏仪，其包括辐射源和耦合到弧度源的旋转光学元件，提供调制的泵浦光束的光学系统，光学耦合到椭偏仪的检测系统和信号分析器。旋转元件椭偏仪被配置为将探测光束传送到样品上的测量点，并测量样品在一个或多个离散波长或波长范围或波长范围内的多个波长的一个或多个椭偏参数。还公开了使用光学测量系统从从样品表面散射，反射，衍射或以其它方式发射的辐射来确定样品特性的方法。

40. 发明申请

US20100091284A1 APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 有权
标题翻译：用于使用散射检测来检测重叠错误的装置和方法
公开(公告)号：US20100091284A1
公开(公告)日：2010-04-15
申请号：US12641663
申请日：2009-12-18
申请人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
发明人： Walter D. Mieher , Ady Levy , Boris Golovanevsky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant , Christopher F. Bevis , John Fielden , Noah Bareket , Kenneth P. Gross , Piotr Zalicki , Dan Wack , Paola Dececco , Thaddeus G. Dziura , Mark Ghinovker
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1st diffraction order and a +1st diffraction order. It is determined whether there are any overlay error between the first structures and the second structures using a scatterometry technique based on the detected spectra by (i) for each target, determining a first differential intensity between the −1st diffraction order and a +1st diffraction order, (ii) for a plurality of pairs of targets each having a first target and a second target, determining a second differential intensity between the first differential intensity of the first target and the first differential intensity of the second target, and (iii) determining any overlay error between the first structures and the second structures using a scatterometry technique based on the second differential intensities determined from each target pair.
摘要翻译：公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。提供多个目标。每个目标包括第一和第二结构的一部分，并且每个目标被设计成在其第一和第二结构部分之间具有偏移。用电磁辐射照射靶，从而以第一衍射级和+ 1衍射级获得每个靶的光谱。使用基于检测到的光谱的第一结构和第二结构之间是否存在任何覆盖误差（i）对于每个目标，确定第一衍射级和第+第一衍射之间的第一差分强度（ii）对于具有第一目标和第二目标的多对目标对，确定第一目标的第一差分强度与第二目标的第一差分强度之间的第二差分强度，以及（iii）使用基于从每个目标对确定的第二差分强度的散射测量技术来确定第一结构和第二结构之间的任何覆盖误差。

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